JPH10189901A5 - - Google Patents

Info

Publication number
JPH10189901A5
JPH10189901A5 JP1996347509A JP34750996A JPH10189901A5 JP H10189901 A5 JPH10189901 A5 JP H10189901A5 JP 1996347509 A JP1996347509 A JP 1996347509A JP 34750996 A JP34750996 A JP 34750996A JP H10189901 A5 JPH10189901 A5 JP H10189901A5
Authority
JP
Japan
Prior art keywords
insulating film
conductive film
film
conductive
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996347509A
Other languages
English (en)
Japanese (ja)
Other versions
JP3592870B2 (ja
JPH10189901A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP34750996A external-priority patent/JP3592870B2/ja
Priority to JP34750996A priority Critical patent/JP3592870B2/ja
Priority to TW086105273A priority patent/TW332928B/zh
Priority to US08/841,783 priority patent/US6100134A/en
Priority to DE19724904A priority patent/DE19724904A1/de
Priority to KR1019970024652A priority patent/KR100351929B1/ko
Priority to CNB971177643A priority patent/CN1155077C/zh
Publication of JPH10189901A publication Critical patent/JPH10189901A/ja
Publication of JP3592870B2 publication Critical patent/JP3592870B2/ja
Application granted granted Critical
Publication of JPH10189901A5 publication Critical patent/JPH10189901A5/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP34750996A 1996-12-26 1996-12-26 半導体装置の製造方法 Expired - Fee Related JP3592870B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP34750996A JP3592870B2 (ja) 1996-12-26 1996-12-26 半導体装置の製造方法
TW086105273A TW332928B (en) 1996-12-26 1997-04-23 Producing method of semiconductor device
US08/841,783 US6100134A (en) 1996-12-26 1997-05-05 Method of fabricating semiconductor device
DE19724904A DE19724904A1 (de) 1996-12-26 1997-06-12 Verfahren zum Herstellen eines Halbleiterbauelements
KR1019970024652A KR100351929B1 (ko) 1996-12-26 1997-06-13 반도체장치의제조방법
CNB971177643A CN1155077C (zh) 1996-12-26 1997-08-29 半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34750996A JP3592870B2 (ja) 1996-12-26 1996-12-26 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH10189901A JPH10189901A (ja) 1998-07-21
JP3592870B2 JP3592870B2 (ja) 2004-11-24
JPH10189901A5 true JPH10189901A5 (enExample) 2004-11-25

Family

ID=18390712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34750996A Expired - Fee Related JP3592870B2 (ja) 1996-12-26 1996-12-26 半導体装置の製造方法

Country Status (6)

Country Link
US (1) US6100134A (enExample)
JP (1) JP3592870B2 (enExample)
KR (1) KR100351929B1 (enExample)
CN (1) CN1155077C (enExample)
DE (1) DE19724904A1 (enExample)
TW (1) TW332928B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100668221B1 (ko) * 2004-12-31 2007-01-11 동부일렉트로닉스 주식회사 Ｍｉｍ 캐패시터 형성 방법
JP6123242B2 (ja) * 2012-11-09 2017-05-10 大日本印刷株式会社 パターン形成方法
CN104617035A (zh) * 2013-11-05 2015-05-13 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920004541B1 (ko) * 1989-05-30 1992-06-08 현대전자산업 주식회사 반도체 소자에서 식각베리어층을 사용한 콘택홀 형성방법
US5206187A (en) * 1991-08-30 1993-04-27 Micron Technology, Inc. Method of processing semiconductor wafers using a contact etch stop
US5439835A (en) * 1993-11-12 1995-08-08 Micron Semiconductor, Inc. Process for DRAM incorporating a high-energy, oblique P-type implant for both field isolation and punchthrough
JPH07235594A (ja) * 1994-02-22 1995-09-05 Mitsubishi Electric Corp 半導体装置の製造方法
JP2765478B2 (ja) * 1994-03-30 1998-06-18 日本電気株式会社 半導体装置およびその製造方法
US5501998A (en) * 1994-04-26 1996-03-26 Industrial Technology Research Institution Method for fabricating dynamic random access memory cells having vertical sidewall stacked storage capacitors
JPH0846173A (ja) * 1994-07-26 1996-02-16 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5482894A (en) * 1994-08-23 1996-01-09 Texas Instruments Incorporated Method of fabricating a self-aligned contact using organic dielectric materials
US5489546A (en) * 1995-05-24 1996-02-06 Micron Technology, Inc. Method of forming CMOS devices using independent thickness spacers in a split-polysilicon DRAM process
US5770498A (en) * 1996-01-31 1998-06-23 Micron Technology, Inc. Process for forming a diffusion barrier using an insulating spacer layer

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