JPH08236481A - 軟金属導体およびその形成方法 - Google Patents

軟金属導体およびその形成方法

Info

Publication number
JPH08236481A
JPH08236481A JP7340833A JP34083395A JPH08236481A JP H08236481 A JPH08236481 A JP H08236481A JP 7340833 A JP7340833 A JP 7340833A JP 34083395 A JP34083395 A JP 34083395A JP H08236481 A JPH08236481 A JP H08236481A
Authority
JP
Japan
Prior art keywords
soft metal
layer
particle size
particles
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7340833A
Other languages
English (en)
Japanese (ja)
Inventor
Rajiv Vasant Joshi
ラジブ・ヴァサント・ジョシー
Manu Jamnadas Tejwani
マヌ・ジャムナダース・テジワーニー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPH08236481A publication Critical patent/JPH08236481A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP7340833A 1995-01-03 1995-12-27 軟金属導体およびその形成方法 Pending JPH08236481A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/367,565 US6285082B1 (en) 1995-01-03 1995-01-03 Soft metal conductor
US367565 2003-02-15

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2003091887A Division JP4215546B2 (ja) 1995-01-03 2003-03-28 軟金属導体およびその形成方法
JP2005295811A Division JP4771526B2 (ja) 1995-01-03 2005-10-11 軟金属導体

Publications (1)

Publication Number Publication Date
JPH08236481A true JPH08236481A (ja) 1996-09-13

Family

ID=23447700

Family Applications (4)

Application Number Title Priority Date Filing Date
JP7340833A Pending JPH08236481A (ja) 1995-01-03 1995-12-27 軟金属導体およびその形成方法
JP2003091887A Expired - Lifetime JP4215546B2 (ja) 1995-01-03 2003-03-28 軟金属導体およびその形成方法
JP2005295811A Expired - Lifetime JP4771526B2 (ja) 1995-01-03 2005-10-11 軟金属導体
JP2008106417A Expired - Lifetime JP5132400B2 (ja) 1995-01-03 2008-04-16 軟金属導体およびその形成方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2003091887A Expired - Lifetime JP4215546B2 (ja) 1995-01-03 2003-03-28 軟金属導体およびその形成方法
JP2005295811A Expired - Lifetime JP4771526B2 (ja) 1995-01-03 2005-10-11 軟金属導体
JP2008106417A Expired - Lifetime JP5132400B2 (ja) 1995-01-03 2008-04-16 軟金属導体およびその形成方法

Country Status (6)

Country Link
US (4) US6285082B1 (enExample)
EP (1) EP0721216B1 (enExample)
JP (4) JPH08236481A (enExample)
KR (1) KR100239027B1 (enExample)
DE (1) DE69517295T2 (enExample)
TW (1) TW351833B (enExample)

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Also Published As

Publication number Publication date
EP0721216A2 (en) 1996-07-10
US6285082B1 (en) 2001-09-04
JP2004006768A (ja) 2004-01-08
JP2008182269A (ja) 2008-08-07
US6030895A (en) 2000-02-29
TW351833B (en) 1999-02-01
JP2006066930A (ja) 2006-03-09
US20020096768A1 (en) 2002-07-25
EP0721216A3 (enExample) 1996-08-14
US6335569B1 (en) 2002-01-01
JP5132400B2 (ja) 2013-01-30
KR960030335A (ko) 1996-08-17
JP4771526B2 (ja) 2011-09-14
DE69517295T2 (de) 2000-12-21
DE69517295D1 (de) 2000-07-06
EP0721216B1 (en) 2000-05-31
JP4215546B2 (ja) 2009-01-28
KR100239027B1 (ko) 2000-01-15

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