JPH077820B2 - 半導体装置の静電気放電保護装置 - Google Patents

半導体装置の静電気放電保護装置

Info

Publication number
JPH077820B2
JPH077820B2 JP4077037A JP7703792A JPH077820B2 JP H077820 B2 JPH077820 B2 JP H077820B2 JP 4077037 A JP4077037 A JP 4077037A JP 7703792 A JP7703792 A JP 7703792A JP H077820 B2 JPH077820 B2 JP H077820B2
Authority
JP
Japan
Prior art keywords
electrostatic discharge
discharge protection
power supply
protection device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4077037A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05129526A (ja
Inventor
ユ ジェ−ホワン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH05129526A publication Critical patent/JPH05129526A/ja
Publication of JPH077820B2 publication Critical patent/JPH077820B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP4077037A 1991-09-16 1992-03-31 半導体装置の静電気放電保護装置 Expired - Fee Related JPH077820B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019910016125A KR940009605B1 (ko) 1991-09-16 1991-09-16 반도체 메모리의 정전방전 보호장치
KR16125/1991 1991-09-16

Publications (2)

Publication Number Publication Date
JPH05129526A JPH05129526A (ja) 1993-05-25
JPH077820B2 true JPH077820B2 (ja) 1995-01-30

Family

ID=19319990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4077037A Expired - Fee Related JPH077820B2 (ja) 1991-09-16 1992-03-31 半導体装置の静電気放電保護装置

Country Status (4)

Country Link
JP (1) JPH077820B2 (de)
KR (1) KR940009605B1 (de)
DE (1) DE4207010C2 (de)
GB (1) GB2259606B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031669A (ja) * 2001-07-13 2003-01-31 Ricoh Co Ltd 半導体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59100550A (ja) * 1982-11-30 1984-06-09 Mitsubishi Electric Corp 半導体装置
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
JPS63260161A (ja) * 1987-04-17 1988-10-27 Nec Corp 半導体入力保護装置
JPH02111064A (ja) * 1988-10-20 1990-04-24 Nec Corp モノリシックｉｃの静電破壊保護回路
JPH02240959A (ja) * 1989-03-14 1990-09-25 Toshiba Corp 半導体装置
JPH03180052A (ja) * 1989-12-08 1991-08-06 Nec Corp 半導体集積回路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4819047A (en) * 1987-05-15 1989-04-04 Advanced Micro Devices, Inc. Protection system for CMOS integrated circuits
US4870530A (en) * 1988-06-27 1989-09-26 Advanced Micro Devices, Inc. Electrostatic discharge protection circuitry for any two external pins of an I.C. package
JPH065705B2 (ja) * 1989-08-11 1994-01-19 株式会社東芝 半導体集積回路装置
KR920015549A (ko) * 1991-01-23 1992-08-27 김광호 반도체소자의 정전방전 보호장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59100550A (ja) * 1982-11-30 1984-06-09 Mitsubishi Electric Corp 半導体装置
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
JPS63260161A (ja) * 1987-04-17 1988-10-27 Nec Corp 半導体入力保護装置
JPH02111064A (ja) * 1988-10-20 1990-04-24 Nec Corp モノリシックｉｃの静電破壊保護回路
JPH02240959A (ja) * 1989-03-14 1990-09-25 Toshiba Corp 半導体装置
JPH03180052A (ja) * 1989-12-08 1991-08-06 Nec Corp 半導体集積回路

Also Published As

Publication number Publication date
DE4207010C2 (de) 1999-01-14
GB2259606A (en) 1993-03-17
JPH05129526A (ja) 1993-05-25
KR940009605B1 (ko) 1994-10-15
GB2259606B (en) 1996-01-17
GB9207050D0 (en) 1992-05-13
DE4207010A1 (de) 1993-03-25
KR930006902A (ko) 1993-04-22

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