JPH0760624A - 半導体円板のエッジを研磨する方法 - Google Patents
半導体円板のエッジを研磨する方法Info
- Publication number
- JPH0760624A JPH0760624A JP6189009A JP18900994A JPH0760624A JP H0760624 A JPH0760624 A JP H0760624A JP 6189009 A JP6189009 A JP 6189009A JP 18900994 A JP18900994 A JP 18900994A JP H0760624 A JPH0760624 A JP H0760624A
- Authority
- JP
- Japan
- Prior art keywords
- edge
- semiconductor
- semiconductor disk
- polishing
- disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 238000007517 polishing process Methods 0.000 title claims abstract description 5
- 239000004744 fabric Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000005498 polishing Methods 0.000 claims abstract description 17
- 239000010432 diamond Substances 0.000 claims abstract description 14
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 13
- 238000007796 conventional method Methods 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 239000002245 particle Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000003518 caustics Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE43-25-518-3 | 1993-07-29 | ||
| DE4325518A DE4325518A1 (de) | 1993-07-29 | 1993-07-29 | Verfahren zur Glättung der Kante von Halbleiterscheiben |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0760624A true JPH0760624A (ja) | 1995-03-07 |
Family
ID=6494026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6189009A Pending JPH0760624A (ja) | 1993-07-29 | 1994-07-20 | 半導体円板のエッジを研磨する方法 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPH0760624A (enrdf_load_stackoverflow) |
| KR (1) | KR950004435A (enrdf_load_stackoverflow) |
| CN (1) | CN1103511A (enrdf_load_stackoverflow) |
| DE (1) | DE4325518A1 (enrdf_load_stackoverflow) |
| IT (1) | IT1272345B (enrdf_load_stackoverflow) |
| MY (1) | MY130149A (enrdf_load_stackoverflow) |
| TW (1) | TW260812B (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008177348A (ja) * | 2007-01-18 | 2008-07-31 | M Tec Kk | ウェーハ面取り加工方法およびその装置 |
| CN102189460A (zh) * | 2010-02-26 | 2011-09-21 | 中村留精密工业株式会社 | 圆盘状工件的倒角装置 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11245151A (ja) * | 1998-02-27 | 1999-09-14 | Speedfam Co Ltd | ワークの外周研磨装置 |
| JP3197253B2 (ja) * | 1998-04-13 | 2001-08-13 | 株式会社日平トヤマ | ウエーハの面取り方法 |
| JP2000158315A (ja) * | 1998-11-27 | 2000-06-13 | Speedfam-Ipec Co Ltd | 端面研磨装置におけるノッチ研磨装置のノッチ研磨方法 |
| EP1043120A1 (en) * | 1999-03-31 | 2000-10-11 | Nippei Toyama Corporation | Method and apparatus for grinding a workpiece |
| JP3510584B2 (ja) * | 2000-11-07 | 2004-03-29 | スピードファム株式会社 | 円板形ワークの外周研磨装置 |
| JP2002329687A (ja) * | 2001-05-02 | 2002-11-15 | Speedfam Co Ltd | デバイスウエハの外周研磨装置及び研磨方法 |
| JP3949941B2 (ja) * | 2001-11-26 | 2007-07-25 | 株式会社東芝 | 半導体装置の製造方法および研磨装置 |
| DE102009030294B4 (de) * | 2009-06-24 | 2013-04-25 | Siltronic Ag | Verfahren zur Politur der Kante einer Halbleiterscheibe |
| CN102642253B (zh) * | 2012-05-04 | 2014-12-10 | 上海华力微电子有限公司 | 一种硅片切边方法及其装置 |
| JP6012719B2 (ja) | 2012-05-07 | 2016-10-25 | 信越半導体株式会社 | 円板形ワーク用外周研磨装置 |
| DE102013210057A1 (de) | 2013-05-29 | 2014-12-04 | Siltronic Ag | Verfahren zur Politur der Kante einer Halbleiterscheibe |
| JP7562994B2 (ja) * | 2020-06-08 | 2024-10-08 | 株式会社Sumco | ウェーハ外周部の研磨装置 |
| CN113182971B (zh) * | 2021-05-12 | 2022-11-25 | 四川雅吉芯电子科技有限公司 | 一种单晶硅外延片高精度磨边装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57184662A (en) * | 1981-05-09 | 1982-11-13 | Hitachi Ltd | Chamfering method and device of wafer |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5958827A (ja) * | 1982-09-28 | 1984-04-04 | Toshiba Corp | 半導体ウエ−ハ、半導体ウエ−ハの製造方法及び半導体ウエ−ハの製造装置 |
| JP2719855B2 (ja) * | 1991-05-24 | 1998-02-25 | 信越半導体株式会社 | ウエーハ外周の鏡面面取り装置 |
| US5128281A (en) * | 1991-06-05 | 1992-07-07 | Texas Instruments Incorporated | Method for polishing semiconductor wafer edges |
| DE4120003A1 (de) * | 1991-06-18 | 1992-12-24 | Mueller Georg Nuernberg | Vorrichtung und verfahren zum kantenverrunden von halbleiterronden |
| US5185965A (en) * | 1991-07-12 | 1993-02-16 | Daito Shoji Co., Ltd. | Method and apparatus for grinding notches of semiconductor wafer |
-
1993
- 1993-07-29 DE DE4325518A patent/DE4325518A1/de not_active Withdrawn
-
1994
- 1994-06-16 MY MYPI94001563A patent/MY130149A/en unknown
- 1994-06-30 CN CN94107806A patent/CN1103511A/zh active Pending
- 1994-07-12 TW TW083106329A patent/TW260812B/zh active
- 1994-07-20 JP JP6189009A patent/JPH0760624A/ja active Pending
- 1994-07-20 KR KR1019940017541A patent/KR950004435A/ko not_active Ceased
- 1994-07-27 IT ITRM940495A patent/IT1272345B/it active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57184662A (en) * | 1981-05-09 | 1982-11-13 | Hitachi Ltd | Chamfering method and device of wafer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008177348A (ja) * | 2007-01-18 | 2008-07-31 | M Tec Kk | ウェーハ面取り加工方法およびその装置 |
| CN102189460A (zh) * | 2010-02-26 | 2011-09-21 | 中村留精密工业株式会社 | 圆盘状工件的倒角装置 |
| JP2011194561A (ja) * | 2010-02-26 | 2011-10-06 | Nakamura Tome Precision Ind Co Ltd | 円盤状ワークの面取装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| ITRM940495A1 (it) | 1996-01-27 |
| CN1103511A (zh) | 1995-06-07 |
| TW260812B (enrdf_load_stackoverflow) | 1995-10-21 |
| MY130149A (en) | 2007-06-29 |
| ITRM940495A0 (it) | 1994-07-27 |
| KR950004435A (ko) | 1995-02-18 |
| DE4325518A1 (de) | 1995-02-02 |
| IT1272345B (it) | 1997-06-16 |
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