JPH0760624A - Method of polishing edge of semiconductor disk - Google Patents
Method of polishing edge of semiconductor diskInfo
- Publication number
- JPH0760624A JPH0760624A JP6189009A JP18900994A JPH0760624A JP H0760624 A JPH0760624 A JP H0760624A JP 6189009 A JP6189009 A JP 6189009A JP 18900994 A JP18900994 A JP 18900994A JP H0760624 A JPH0760624 A JP H0760624A
- Authority
- JP
- Japan
- Prior art keywords
- edge
- semiconductor
- semiconductor disk
- polishing
- disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、結び付けられた研削粒
子で研削することによってエッジを丸くすることに続い
て、半導体円板のエッジを研磨する方法に関する。FIELD OF THE INVENTION The present invention relates to a method of polishing the edges of a semiconductor disk subsequent to rounding the edges by grinding with bound abrasive particles.
【０００２】[0002]
【従来の技術】半導体円板のエッジは、普通の形式で、
円板を分離した後に円筒状に研削される単結晶によって
研削され、この場合、結晶内の欠落及び損傷が除去され
る。このようなエッジを丸くする別の目的は、半導体円
板が規定のエッジ輪郭を備え、かつできるだけ滑らかな
かつ抵抗できるエッジ表面を生じることである。円板エ
ッジの粗面度を減少することによって、小さな衝撃負荷
時にさえ欠落してしまうこと、及び円板を電子的な構成
要素に加工する次の経過において妨害になる粒子がエッ
ジ表面上に沈着することが避けられる。2. Description of the Related Art The edge of a semiconductor disk is in the usual form,
It is ground by means of a single crystal, which is ground into a cylinder after separating the disc, in which case defects and damages in the crystal are removed. Another purpose of rounding such edges is for the semiconductor disk to have a defined edge contour and to produce an edge surface that is as smooth and resistant as possible. By reducing the roughness of the disc edges, particles can be missing even at low impact loads, and particles can be deposited on the edge surface that interfere with the next process of processing the disc into electronic components. You can avoid doing it.
【０００３】普通の形式で使用される機械的な研削工具
の作業面は、その中にはダイヤモンド粒子が固定的に結
び付けられているような剛性的な圧縮可能な担体材料か
ら成っている。円板エッジの所望の輪郭を研削するため
に、作業面の形がこの輪郭の形状に相応していなければ
ならない。アメリカ合衆国特許第４，３４４，２６０号
明細書において、研削によって半導体円板のエッジを丸
くするための方法が開示されている。The working surface of a mechanical grinding tool used in conventional fashion consists of a rigid, compressible carrier material in which diamond particles are fixedly bound. In order to grind the desired contour of the disc edge, the shape of the working surface must correspond to this contour. U.S. Pat. No. 4,344,260 discloses a method for rounding the edges of a semiconductor disk by grinding.
【０００４】研削によって円板エッジを丸くした後に、
エッジ表面の規定の最小粗面度が存在している。さら
に、研削が結晶格子の損傷（ダメージ）を数μｍの深さ
まで与えることは避けれない。 普通の形式で、化学的
な腐食剤を用いてエッジを丸くすることに続いて、損傷
された結晶範囲が一緒に取り除かれるだけ多くの材料が
搬出される。しかしながら、エッジの十分な研磨は、腐
食処置によっては達成されない。After rounding the disc edge by grinding,
There is a specified minimum roughness of the edge surface. Furthermore, it is unavoidable that the grinding damages the crystal lattice to a depth of several μm. In the usual way, following the rounding of the edges with a chemical corrosive agent, as much material is removed as the damaged crystal areas are removed together. However, sufficient polishing of the edges is not achieved by corrosive measures.
【０００５】それ故に、従来の方法により既に研削さ
れ、かつ場合によっては続いて腐食された半導体円板の
エッジが、化学的−機械的にバニシ仕上げされ、かつこ
の場合、研磨されることは見逃される。この種の処置に
おいて、化学的に作用する腐食剤を負荷しつつバニシ仕
上げ布が中心で回転される半導体円板のエッジに圧着さ
れる。It is therefore overlooked that the edges of semiconductor discs which have already been ground by conventional methods and which have in some cases been subsequently corroded are chemically-mechanically burnished and in this case polished. Be done. In this type of procedure, a burnishing cloth is crimped onto the edge of a semiconductor disc which is rotated about its center, while being loaded with a chemically acting corrosive agent.
【０００６】円板エッジの化学的−機械的な研磨は、材
料搬出が極めて僅かな割合でしか行われず、それに相応
して半導体円板毎に長い加工時間が必要であるという欠
点を有している。さらに、使用される腐食剤が故意にで
はなく半導体円板の両側面の一方に入り込み、そこで所
望されない表面腐食を生じてしまうという不都合があ
る。The chemical-mechanical polishing of the disk edge has the disadvantage that the material removal takes place only at a very small rate and, correspondingly, a long processing time is required for each semiconductor disk. There is. In addition, the corrosive agent used unintentionally enters one of the two side surfaces of the semiconductor disk, which causes undesired surface corrosion.
【０００７】半導体円板のエッジ領域には、しばしば、
半導体円板の位置決めを簡単にし、かつ結晶配列を判ら
せるような刻み目状のマークが研削されている。このよ
うなマークはノッチとして知られている。半導体円板の
ノッチにおけるエッジを研磨するための満足させる解決
策はまだ得られない。The edge region of the semiconductor disk is often
Notched marks are ground to facilitate positioning of the semiconductor disk and to identify the crystal arrangement. Such marks are known as notches. No satisfactory solution is yet available for polishing the edges in the notches of semiconductor disks.
【０００８】[0008]
【発明が解決しようとする課題】本発明の課題は、半導
体円板の研削されたエッジが、場合によってはノッチに
おいても、前述の欠点を生じることなしに研磨されるこ
とができるような方法を提供することにある。The object of the present invention is to provide a method by which the ground edges of a semiconductor disk can be polished, possibly even at notches, without the disadvantages mentioned above. To provide.
【０００９】[0009]
【課題を解決するための手段】前述の課題は、ダイヤモ
ンドを混合される圧縮可能な布が、バニシ仕上げ工具の
作業面として所定の力で半導体円板のエッジに圧着さ
れ、かつ半導体円板及び／又は作業面が回転運動を実施
することを特徴とする、半導体円板のエッジを、場合に
よっては半導体円板のノッチにおいても研磨する方法に
より解決される。SUMMARY OF THE INVENTION The above-mentioned problem is that a compressible cloth mixed with diamond is pressed against the edge of a semiconductor disk with a predetermined force as a work surface of a burnishing tool, and the semiconductor disk and And / or the method is characterized in that the edge of the semiconductor disk is polished, optionally also in the notch of the semiconductor disk, characterized in that the working surface carries out a rotational movement.
【００１０】ダイヤモンドを混入された布は周知であ
る。この布は、０，２５〜３０μｍの種々のダイヤモン
ド粒子を有して提出される。さらに、ダイヤモンドを混
入された布がラップ円板上に接着され、かつ酸化物のセ
ラミック、及び非酸化物のセラミックから成る大きな面
の堅い材料をバニシ仕上げするために硬いスチール又は
非−鉄−金属が使用されることは既に周知である（Ｉｎ
ｄｕｓｔｒｉｅ Ｄｉａｍａｎｔｅｎ Ｒｕｎｄｓｃｈ
ａｕ（産業ダイヤモンド評論）３／９２，１１５−１１
７頁）。Cloth containing diamonds is well known. The fabric is submitted with various diamond particles of 0.25 to 30 μm. In addition, a diamond-impregnated cloth is glued onto the lap disc and hard steel or non-iron-metal to burnish large surface hard materials consisting of oxide and non-oxide ceramics. Is already known to be used (In
dustie Diamanten Rundsch
au (Industrial diamond review) 3/92, 115-11
7).
【００１１】今や、ダイヤモンドを混入された布を使用
して、既に研削された半導体円板エッジを、化学的−機
械的なバニシ仕上げにおけるバニシ仕上げ結果に達する
品質を有して研磨されることができるバニシ仕上げ法が
改良された。さらに、この方法は、半導体円板のノッチ
におけるエッジを研磨するためにも適している。Diamond-contaminated cloth can now be used to polish already ground semiconductor disc edges with qualities that reach burnishing results in chemical-mechanical burnishing. The possible burnishing method has been improved. Furthermore, this method is also suitable for polishing the edges in the notches of semiconductor disks.
【００１２】[0012]
【実施例】本発明をより理解するために、以下に２つの
図面を用いて詳しく説明する。エッジを研磨するため
に、半導体円板（１）が、扁平の円板保持部、所謂チャ
ック（２）に固定される。半導体円板のエッジ（３）
は、チャックの縁を越えて突出しており、従ってエッジ
にバニシ仕上げ工具が自由に接近できる。バニシ仕上げ
工具の作業面（４）は、ダイヤモンドを混入された、有
利には１〜６μｍのダイヤモンド造粒を有する布であ
る。In order to better understand the present invention, a detailed description will be given below with reference to two drawings. In order to polish the edges, the semiconductor disc (1) is fixed to a flat disc holder, a so-called chuck (2). Edge of semiconductor disk (3)
Project beyond the edges of the chuck and are therefore freely accessible to the burnishing tool. The working surface (4) of the burnishing tool is a diamond-laden cloth, preferably having a 1-6 μm diamond granulation.
【００１３】ノッチ（５）における円板エッジを研磨す
るための工具は、有利には、回転軸線（６）を中心にし
て回転しダイヤモンドを混入された布を張られた回転円
板（７）を有している。ダイヤモンドを混入された布
は、この布が、回転円板の全周を、かつ回転円板の側面
の少なくとも一部分を被うように、回転円板上に張られ
て、接着され、あるいは他の方法で固定されている。さ
らに、布は、この布を張られた回転円板の横断面が回転
円板の縁の範囲で少なくともほぼ、半導体円板の、ノッ
チ（５）を形成する切り口の形を有するように形成され
ている。ノッチにおけるエッジを研磨するために、中央
で回転される回転円板の周面が静止する半導体円板のノ
ッチ内に導入され、かつ所定の力によって半導体円板の
エッジに圧着される。この場合、半導体円板の側面と回
転円板の側面とは互いに９０°の角度を成している。圧
着力は、有利には空気力式に、あるいはばねを介して伝
達される。場合によっては、工具がその自重によって半
導体円板のエッジに圧着される場合にも十分である。ノ
ッチにおける半導体円板のエッジがバニシ仕上げ工具の
作業面によって完全に掴まれることを保証するために、
有利には、別の回転軸線（８）が半導体円板の表面に対
して平行に設けられており、かつ回転される回転円板
が、前記回転軸線を中心にして振り子運動で僅かに持ち
上げられかつ降ろされる。The tool for polishing the disc edge in the notch (5) is preferably a spinning disc (7) which is rotated about the axis of rotation (6) and which is covered with a diamond-laden cloth. have. A diamond-impregnated cloth is stretched, glued, or otherwise attached to the rotating disk such that the cloth covers the entire circumference of the rotating disk and covers at least a portion of the sides of the rotating disk. Has been fixed in the way. Furthermore, the cloth is formed in such a way that the cross-section of the cloth-spun rotating disk has at least approximately the shape of the semiconductor disk notch (5) in the region of the edge of the rotating disk. ing. In order to polish the edge in the notch, the peripheral surface of the centrally rotated rotating disc is introduced into the notch of the stationary semiconductor disc and pressed by a predetermined force onto the edge of the semiconductor disc. In this case, the side surface of the semiconductor disk and the side surface of the rotating disk form an angle of 90 ° with each other. The crimping force is preferably transmitted pneumatically or via a spring. In some cases, it is sufficient if the tool is pressed against the edge of the semiconductor disk by its own weight. To ensure that the edge of the semiconductor disc in the notch is completely gripped by the working surface of the burnishing tool,
Advantageously, another axis of rotation (8) is provided parallel to the surface of the semiconductor disk, and the rotating disk to be rotated is lifted slightly in a pendulum movement about said axis of rotation. It is taken down.
【００１４】原則的に、ダイヤモンドを混入された布か
ら成る扁平な作業面を有する回転円板は、ノッチの外側
における半導体円板のエッジを研磨するために使用する
こともできる。勿論、回転円板の周面が半導体円板のエ
ッジに圧着される場合に、半導体円板が回転されること
が前提である。 しかし、このために有利には、図面に
示されていてかつ以下に記載される特徴を有するバニシ
仕上げ工具によって研磨される。このバニシ仕上げ工具
は、主に、軸（９）を中心にして回転されるトランペッ
ト状に拡開する平らな端面を有するスピンドル（１０）
から成っている。この端面には、ダイヤモンドを混入さ
れた布が接着され、張られ、あるいは別の方法で固定さ
れる。この端面はバニシ仕上げ工具の作業面（４）を形
成する。エッジを研磨するために、半導体円板はチャッ
ク（２）上に固定され、かつ、中心で、あるいは偏心的
に回転される。軸（９）を中心に回転されるスピンドル
（１０）は、作業面が所定の力で半導体円板のエッジに
圧着されるように半導体円板に接近される。有利には、
必要な圧着力は、空気力式に、ばねによって、あるいは
バニシ仕上げ工具の重力によって生ぜしめられる。この
場合、スピンドルの回転軸線は、半導体円板の回転軸線
に対して垂直に、あるいは半導体円板のエッジの上方又
は下方の湾曲された側面に隣接する仮想の接線面に対し
て垂直に位置する。これら３つの位置は、バニシ仕上げ
工具によって互いに制御されることもできる。しかし、
この位置を占める３つのバニシ仕上げ工具によって同時
に作業されるので、エッジの研磨が一回の作業動作で完
了されるという利点がある。In principle, a rotating disk with a flat working surface made of diamond-impregnated cloth can also be used to polish the edges of the semiconductor disk outside the notch. Of course, it is premised that the semiconductor disk is rotated when the peripheral surface of the rotating disk is crimped to the edge of the semiconductor disk. However, for this purpose it is advantageously ground by a burnishing tool having the features shown in the drawings and described below. This burnishing tool consists mainly of a spindle (10) having a flat end face which expands in a trumpet shape which is rotated about an axis (9).
Made of. A diamond-blended cloth is glued, stretched or otherwise secured to this end face. This end surface forms the working surface (4) of the burnishing tool. In order to polish the edges, the semiconductor disk is fixed on the chuck (2) and rotated centrally or eccentrically. A spindle (10), which is rotated about an axis (9), approaches the semiconductor disc such that the working surface is pressed against the edge of the semiconductor disc with a predetermined force. Advantageously,
The required crimping force is generated pneumatically, by springs or by the gravity of the burnishing tool. In this case, the axis of rotation of the spindle lies perpendicular to the axis of rotation of the semiconductor disc or perpendicular to an imaginary tangent plane adjacent to the curved side above or below the edge of the semiconductor disc. . These three positions can also be controlled together by the burnishing tool. But,
Since the work is done simultaneously by the three burnishing tools occupying this position, there is the advantage that the polishing of the edge is completed in one working movement.
【００１５】エッジの研磨中に半導体円板が中心で回転
されると、バニシ仕上げ工具の作業面の点状の範囲しか
必要とされない。それ故、作業面の運転時間を延長する
ためには半導体円板が偏心的に回転されると有利であ
り、この場合、作業面の研磨に必要な範囲はリング状に
拡大される。If the semiconductor disk is rotated about its center during edge polishing, only a point-like area of the working surface of the burnishing tool is required. Therefore, in order to extend the working time of the work surface, it is advantageous if the semiconductor disk is eccentrically rotated, in which case the area required for polishing the work surface is enlarged in a ring shape.
【００１６】本発明による方法の特別の利点は、ダイヤ
モンドを混入された布の圧縮性によって、湾曲されたエ
ッジ表面全体の研磨が一回の作業動作中に達成されるこ
とができることである。バニシ仕上げ工具の作業面がエ
ッジに圧着されると、ダイヤモンドを混入された布が半
導体円板のエッジに密着される。その結果、バニシ仕上
げ工具は、エッジの研磨中に普通の形式で研削された小
面によって複雑にされたエッジ輪郭に合わせる必要はな
い。さらに、布内で結び付けられたダイヤモンド粒子は
圧力負荷時に十分に可撓性であり、従って、エッジの研
磨は結晶格子の損傷をほとんど惹起しない。エッジを研
磨する際に生じる材料搬出は、バニシ仕上げ工具の作業
面をエッジに圧着する力、切削速度及び加工時間に関連
して簡単な形式で変化される。本発明による方法による
エッジの研磨は、化学的−機械的な研磨法より著しく速
く行われる。本発明による方法は、実例においてテスト
される。A particular advantage of the method according to the invention is that, due to the compressibility of the diamond-impregnated cloth, polishing of the entire curved edge surface can be achieved in one working operation. When the working surface of the burnishing tool is pressed against the edge, the diamond-laden cloth is brought into close contact with the edge of the semiconductor disk. As a result, the burnishing tool does not have to conform to the edge contours complicated by facets ground in the usual way during edge polishing. Furthermore, the diamond particles bound in the fabric are sufficiently flexible under pressure loading so that edge polishing causes little damage to the crystal lattice. The material removal that occurs when polishing the edge is varied in a simple manner in relation to the force with which the working surface of the burnishing tool is pressed against the edge, the cutting speed and the machining time. Polishing of edges by the method according to the invention is significantly faster than chemical-mechanical polishing methods. The method according to the invention is tested in the examples.
【００１７】実例：２００ｍｍの直径を有するシリコン
円板のエッジは、普通の形式で研削によってエッジを丸
くされる。それに応じて円板エッジの粗面度を示す値Ｒ
ｍａｘは１，５μｍになり、ノッチにおいてほぼ２〜３
μｍになる。本発明による方法によりダイヤモンドを混
入された布によって円板周面を続いて研磨する際に、リ
ング状の摩耗面を維持するために、チャックに半導体円
板を目的に合わせて偏心的に締め付けることによって５
０と８０ｍｍの間で布の作用直径が変化される。布は、
１０Ｎの力によって半導体円板のエッジに圧着される。
バニシ仕上げ工具の周速度は２０ｍ／ｓであり、チャッ
クの回転数は４ｍｉｎ−１である。６μｍ及び１μｍの
ダイヤモンド−粒子を有するダイヤモンドを混入された
布による２×４５ｓの加工時間により、０，８ｎｍの残
留するエッジ粗面度が測定される。ノッチにおけるエッ
ジを研磨するために、３μｍのダイヤモンド粒子を有す
る布が使用される。バニシ仕上げ工具の周速度は１１ｍ
／ｓであり、接近力は１０Ｎである。測定されうる粗面
を除去するために、１５ｓの加工速度で十分である。Example: The edges of a silicon disc with a diameter of 200 mm are rounded by grinding in the usual way. Correspondingly, the value R indicating the roughness of the disk edge
max becomes 1.5 μm, and it is almost 2-3 at the notch.
It becomes μm. When the peripheral surface of the disk is subsequently polished by a cloth mixed with diamond by the method according to the present invention, the semiconductor disk is eccentrically clamped to the chuck in order to maintain a ring-shaped wear surface. By 5
The working diameter of the fabric is varied between 0 and 80 mm. The cloth is
It is pressed against the edge of the semiconductor disk with a force of 10N.
The peripheral speed of the burnishing tool is 20 m / s, and the rotation speed of the chuck is 4 min-1. A residual edge roughness of 0.8 nm is measured with a processing time of 2 × 45 s with a diamond-laden cloth with 6 μm and 1 μm diamond particles. A cloth with 3 μm diamond particles is used to polish the edges in the notches. Peripheral speed of burnishing tool is 11m
/ S, and the approach force is 10N. A processing speed of 15 s is sufficient to remove the rough surface that can be measured.
【００１８】以下、本発明の好適な実施態様を例示す
る。 １． 半導体円板のエッジを、場合によっては半導体円
板のノッチにおいても研磨する方法において、ダイヤモ
ンドを混合される圧縮可能な布が、バニシ仕上げ工具の
作業面として所定の力で半導体円板のエッジに圧着さ
れ、かつ半導体円板及び／又は作業面が回転運動を実施
することを特徴とする、半導体円板のエッジを研磨する
方法。The preferred embodiments of the present invention will be illustrated below. 1. In the method of polishing the edge of a semiconductor disk, optionally also in the notch of the semiconductor disk, a compressible cloth mixed with diamond is applied to the edge of the semiconductor disk with a predetermined force as the working surface of the burnishing tool. Method for polishing the edge of a semiconductor disc, characterized in that it is crimped and the semiconductor disc and / or the working surface carry out a rotary movement.
【００１９】２． 半導体円板が中心で回転することを
特徴とする前記１に記載の方法。2. 2. The method according to the above 1, wherein the semiconductor disk rotates about a center.
【００２０】３． 半導体円板が偏心的に回転すること
を特徴とする前記１に記載の方法。3. 2. The method according to 1 above, wherein the semiconductor disk rotates eccentrically.
【００２１】４． 作業面が、空気力式に、ばね力又は
重力を介して、半導体円板の加工しようとする領域に圧
着されることを特徴とする前記１から３までのいずれか
１に記載の方法。4. Method according to any one of the preceding claims, characterized in that the working surface is pressed pneumatically via spring force or gravity into the region of the semiconductor disk to be processed.
【００２２】５． 作業面として、１〜６μｍのダイヤ
モンド粒子を有する布が使用されることを特徴とする前
記１から４までのいずれか１に記載の方法。5. 5. The method according to any one of 1 to 4 above, wherein a cloth having diamond particles of 1 to 6 μm is used as a working surface.
【００２３】[0023]
【発明の効果】以上のとおり、本発明により、半導体円
板の研削されたエッジが、場合によってはノッチにおい
ても、前述の欠点を生じることなしに研磨されることが
できるような方法を提供することができる。As described above, the present invention provides a method by which the ground edges of a semiconductor disk can be polished, possibly at notches, without the disadvantages mentioned above. be able to.
【図１】本発明による方法実施中の、工具と半導体円板
の配置を示す概略的側面図である。1 is a schematic side view showing the arrangement of a tool and a semiconductor disc during the implementation of the method according to the invention.
【図２】本発明による方法実施中の、工具と半導体円板
の配置を示す平面図である。FIG. 2 is a plan view showing the arrangement of the tool and the semiconductor disk during the implementation of the method according to the invention.
１ 半導体円板 ２ チャック ３ エッジ ４ 作業面 ５ ノッチ ６ 回転軸線 ７ 回転円板 ８ 回転軸線 ９ 軸 １０ スピンドル 1 Semiconductor Disc 2 Chuck 3 Edge 4 Working Surface 5 Notch 6 Rotation Axis 7 Rotation Disc 8 Rotation Axis 9 Axis 10 Spindle
───────────────────────────────────────────────────── フロントページの続き (72)発明者 アントン・フーバー ドイツ連邦共和国 ブルクハウゼン、ブル クスタイク 31 (72)発明者 ヨアシム・ユンゲ ドイツ連邦共和国 ブルクハウゼン、ドク トル−ヴォルフガング−グルーバー−シュ トラーセ ７ ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Anton Hoover, Burghausen, Federal Republic of Germany, Bruxteig 31 (72) Inventor, Joachim Junge, Burghausen, Federal Republic of Germany, Doctor-Wolfgang-Gruber-Strasse 7
Claims (1)
半導体円板のノッチにおいても研磨する方法において、
ダイヤモンドを混合される圧縮可能な布が、バニシ仕上
げ工具の作業面として所定の力で半導体円板のエッジに
圧着され、かつ半導体円板及び／又は作業面が回転運動
を実施することを特徴とする半導体円板のエッジを研磨
する方法。1. A method of polishing the edge of a semiconductor disk, optionally also in the notch of the semiconductor disk,
A compressible cloth mixed with diamond is pressed against the edge of the semiconductor disk with a predetermined force as a working surface of the burnishing tool, and the semiconductor disk and / or the working surface carry out a rotational movement. Method for polishing the edge of a semiconductor disk.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4325518A DE4325518A1 (en) | 1993-07-29 | 1993-07-29 | Method for smoothing the edge of semiconductor wafers |
| DE43-25-518-3 | 1993-07-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0760624A true JPH0760624A (en) | 1995-03-07 |
Family
ID=6494026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6189009A Pending JPH0760624A (en) | 1993-07-29 | 1994-07-20 | Method of polishing edge of semiconductor disk |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPH0760624A (en) |
| KR (1) | KR950004435A (en) |
| CN (1) | CN1103511A (en) |
| DE (1) | DE4325518A1 (en) |
| IT (1) | IT1272345B (en) |
| MY (1) | MY130149A (en) |
| TW (1) | TW260812B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008177348A (en) * | 2007-01-18 | 2008-07-31 | M Tec Kk | Wafer chamfering method and its device |
| CN102189460A (en) * | 2010-02-26 | 2011-09-21 | 中村留精密工业株式会社 | Chamferring device of disc-shaped workpiece |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11245151A (en) * | 1998-02-27 | 1999-09-14 | Speedfam Co Ltd | Work periphery polishing device |
| JP3197253B2 (en) * | 1998-04-13 | 2001-08-13 | 株式会社日平トヤマ | Wafer chamfering method |
| JP2000158315A (en) * | 1998-11-27 | 2000-06-13 | Speedfam-Ipec Co Ltd | Notch polishing method of notch polishing device in end surface polishing device |
| KR20000076987A (en) * | 1999-03-31 | 2000-12-26 | 다구마시로오 | Method and apparatus for grinding a workpiece |
| JP3510584B2 (en) * | 2000-11-07 | 2004-03-29 | スピードファム株式会社 | Peripheral polishing device for disk-shaped workpiece |
| JP2002329687A (en) * | 2001-05-02 | 2002-11-15 | Speedfam Co Ltd | Apparatus and method of polishing periphery of device wafer |
| JP3949941B2 (en) * | 2001-11-26 | 2007-07-25 | 株式会社東芝 | Semiconductor device manufacturing method and polishing apparatus |
| DE102009030294B4 (en) * | 2009-06-24 | 2013-04-25 | Siltronic Ag | Process for polishing the edge of a semiconductor wafer |
| CN102642253B (en) * | 2012-05-04 | 2014-12-10 | 上海华力微电子有限公司 | Silicon slice edge cutting method and device of silicon slice edge cutting method |
| DE112013002353B4 (en) | 2012-05-07 | 2023-11-23 | Shin-Etsu Handotai Co., Ltd. | External peripheral polishing device for disc-shaped workpieces |
| DE102013210057A1 (en) | 2013-05-29 | 2014-12-04 | Siltronic Ag | Process for polishing the edge of a semiconductor wafer |
| CN113182971B (en) * | 2021-05-12 | 2022-11-25 | 四川雅吉芯电子科技有限公司 | High-precision edge grinding device for monocrystalline silicon epitaxial wafer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57184662A (en) * | 1981-05-09 | 1982-11-13 | Hitachi Ltd | Chamfering method and device of wafer |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5958827A (en) * | 1982-09-28 | 1984-04-04 | Toshiba Corp | Semiconductor wafer and method and apparatus for manufacturing semiconductor wafer |
| JP2719855B2 (en) * | 1991-05-24 | 1998-02-25 | 信越半導体株式会社 | Mirror chamfering device around wafer |
| US5128281A (en) * | 1991-06-05 | 1992-07-07 | Texas Instruments Incorporated | Method for polishing semiconductor wafer edges |
| DE4120003A1 (en) * | 1991-06-18 | 1992-12-24 | Mueller Georg Nuernberg | DEVICE AND METHOD FOR EDGE-ROUNDING SEMICONDUCTOR RODS |
| US5185965A (en) * | 1991-07-12 | 1993-02-16 | Daito Shoji Co., Ltd. | Method and apparatus for grinding notches of semiconductor wafer |
-
1993
- 1993-07-29 DE DE4325518A patent/DE4325518A1/en not_active Withdrawn
-
1994
- 1994-06-16 MY MYPI94001563A patent/MY130149A/en unknown
- 1994-06-30 CN CN94107806A patent/CN1103511A/en active Pending
- 1994-07-12 TW TW083106329A patent/TW260812B/zh active
- 1994-07-20 JP JP6189009A patent/JPH0760624A/en active Pending
- 1994-07-20 KR KR1019940017541A patent/KR950004435A/en not_active Application Discontinuation
- 1994-07-27 IT ITRM940495A patent/IT1272345B/en active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57184662A (en) * | 1981-05-09 | 1982-11-13 | Hitachi Ltd | Chamfering method and device of wafer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008177348A (en) * | 2007-01-18 | 2008-07-31 | M Tec Kk | Wafer chamfering method and its device |
| CN102189460A (en) * | 2010-02-26 | 2011-09-21 | 中村留精密工业株式会社 | Chamferring device of disc-shaped workpiece |
| JP2011194561A (en) * | 2010-02-26 | 2011-10-06 | Nakamura Tome Precision Ind Co Ltd | Chamfering device for disk-like workpiece |
Also Published As
| Publication number | Publication date |
|---|---|
| KR950004435A (en) | 1995-02-18 |
| CN1103511A (en) | 1995-06-07 |
| TW260812B (en) | 1995-10-21 |
| MY130149A (en) | 2007-06-29 |
| DE4325518A1 (en) | 1995-02-02 |
| IT1272345B (en) | 1997-06-16 |
| ITRM940495A1 (en) | 1996-01-27 |
| ITRM940495A0 (en) | 1994-07-27 |
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