JP2008177348A - Wafer chamfering method and its device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wafer chamfering method and its device capable of accurately forming the required shape of a cross section by improving the precision of the shape of the cross section in chamfering a wafer, and shortening a machining time and also extending the life span of a grinding stone. <P>SOLUTION: The wafer chamfering method and its device make two grinding stones having no groove for machining the revolving wafer approximate an identical part of a wafer circumferential part and arranging the grinding stones face to face, and coincidentally machines and forms a position approximated to the identical part of a wafer circumferential end by machining surfaces of both the rotating grinding stones having no groove. In circumferential-end diameter-reduction machining, the two grinding stones having no groove are made to contact with each other to machine the wafer with their heights held at constant heights, and in contouring machining, the two grinding stones having no groove are individually moved to each surface of the wafer circumferential end to sandwich the identical part in the diameter direction of the wafer circumferential end from above and below, coincidentally machining the respective surfaces. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a wafer chamfering method and apparatus for improving the accuracy of chamfering of a wafer by processing two rotating grindstones as a set.

  Disc-like thin plate materials used as substrates for integrated circuits such as various crystal wafers and other semiconductor device wafers, and other disc-like thin plate materials made of hard materials including metal materials, such as silicon (Si) single crystal, gallium arsenide (GaAs), In the chamfering of disk-like thin plate materials (collectively these are simply called wafers) made of quartz, quartz, sapphire, quartz, ferrite, silicon carbide (SiC), etc., industrial diamond mixed as abrasive grains with a resin-based binder Is ground using a roughing grindstone that has been hardened, and then polished using a rubber grindstone or the like for subsequent finishing to form a peripheral portion having a predetermined shape and a predetermined surface roughness.

  In the case of a notched wafer, each part of the wafer 1 used for the chamfering is V-shaped for indicating a reference position in the circumferential direction of the edge (peripheral end) 1a and the peripheral end 1b as shown in FIG. Alternatively, a U-shaped notch 1n is formed, and an angle between the bottom 1nb of the notch 1n and the outer peripheral ends (hereinafter referred to as notch corners) 1nc and 1nc is a notch angle α1, and from the notch corner 1nc to the bottom 1nb. Is the notch depth dn.

  Further, in the case of the wafer 1 with an orientation flat, as shown in FIG. 48, a length (hereinafter referred to as an orientation flat length) 1 between each end portion (hereinafter referred to as an orientation flat corner) 1fc of the orientation flat 1f (hereinafter referred to as an orientation flat length) 1 The height of the arc disappearing by forming the orientation flat 1f (hereinafter referred to as orientation flat depth) h is 1 = 2Rsin (α2 / 2) where h2 is the central angle of the orientation flat forming portion, h = D−B = R (1−cos (α2 / 2)).

  As shown in FIG. 49, the edge 1a of the wafer 1 is inclined at an angle α3 (about 22 °) with respect to the upper plane 1su and at an angle α3 (about 22 °) with respect to the lower plane 1sd. When processing into a cross-sectional shape smoothly connected by the lower slope 11ad and the arc 1c having a single radius R1, the horizontal length of the upper slope 1au is “surface width X1”, and the horizontal length of the lower slope 1ad is “ The width of the edge 1a determined by each of these dimensions is referred to as “surface width X2”, and the cross-sectional shape (cross-sectional shape I when distinguished from the shape of FIG. 50) is defined. (To distinguish from the shape of FIG. 50, the cross-sectional shape accuracy I) ”.

  As shown in FIG. 50, the edge 1a of the wafer 1 has an upper slope 1au inclined by an angle α4 with respect to the upper plane 1su, a lower slope 1ad inclined by an angle α4 with respect to the lower plane 1sd, and an end face of the edge 1a. When processing into a cross-sectional shape that is smoothly connected by two arcs, that is, arcs 1c and 1c having the same radius R2 between the peripheral edge 1b and the peripheral end 1b, the horizontal length of the upper slope 1au is defined as “surface width X1”, The horizontal length of the lower slope 1ad is referred to as “surface width X2”, and the surface width of the peripheral edge 1b is referred to as “surface width X3”, and the cross section of the edge 1a determined by these dimensions is referred to as “cross-sectional shape (see FIG. The accuracy of each dimension is referred to as “cross-sectional shape accuracy (to distinguish from the shape of FIG. 49, cross-sectional shape accuracy II)”. .

  Further, as shown in FIG. 51, after processing the upper and lower slopes 1au, 1ad into a shape (A in the figure) that is connected by an arc 1c having a single radius R1, the edge 1a is asymmetric in the vertical direction (in the figure). B) is reworked to deform the edge shape, and the edge 1a of the wafer 1 is processed into a shape in which only one side is inclined so that only the back surface (lower surface) is thinned. It is a shape to answer the demand because there is a tendency to make the back side thinner for the purpose of overlapping and connecting the chips directly.

Such chamfering processing of the wafer 1 includes processing using a grooved total shape grindstone having a groove in which the outer shape of the peripheral edge of the wafer to be processed is formed in order to obtain a cross-sectional shape and cross-sectional shape accuracy. (Patent Documents 1 to 6).
For example, after performing rough grinding using a metal bond grindstone, finish polishing is performed using a resin bond grindstone so that the edge 1a becomes a mirror surface.
However, when a general-purpose grindstone is used, the coolant is difficult to enter in the deepest part of the grindstone groove, so that the grindstone is easily damaged, and streaks remain in the circumferential direction of the edge 1a, resulting in a large surface roughness. There was a problem that it was easy to become.

Therefore, a polishing method and apparatus using a rubber wheel containing an abrasive for chamfering the wafer 1 as a grindstone is proposed, and by using a rubber wheel having a particularly large diameter, further reduction of the striations can be performed. (Patent Document 7).
However, even when polishing is performed so that the axis of the rotation shaft to which the rubber wheel is fixed is parallel to the rotation direction of the wafer 1, about 2 to 3 pits remain on the entire circumference of the edge 1a. Therefore, it has not yet reached zero on the entire circumference.

Therefore, the necessary inclination angle α of the rotation axis of the rubber wheel is calculated from the peripheral speed of the rubber wheel and the peripheral speed of the wafer 1 so that the polishing direction at the edge 1a is approximately 45 ° from the surface direction, and the rotation axis is Polishing was performed at the required inclination angle (Patent Document 8).
However, according to this method, there is an advantage that the cross-sectional shape of the edge 1a can be arbitrarily created by changing the program. On the other hand, the grindstone needs to enter the lower side of the wafer 1, that is, the wafer mounting base side. In addition, the grinding wheel width is narrowed, the processing time is lengthened, and the life of the grinding wheel is shortened.

Japanese Patent Laid-Open No. 06-104228 Japanese Patent Laid-Open No. 06-262505 JP-A-11-207584 JP 2000-052210 A JP 2000-317789 A JP 2000-107999 A JP 2001-300837 A JP 2005-040877 A

[Problems of the prior art]
In these conventional methods and apparatuses for chamfering a wafer, the groove 1 is a grindstone, a grindstone having a groove having the same cross-sectional shape as the wafer 1, and the wafer 1 is rotated at least one rotation at a low speed compared to the rotation speed of the grindstone. By rotating, there is an advantage that the processing time becomes relatively short, but the cross-sectional shape of the edge 1a is determined by the shape of the grindstone, and the cross-sectional shape accuracy depends on the accuracy of the grindstone. In some cases, it is necessary to use a grindstone with a different cross-sectional shape, and it is difficult for the coolant for machining to enter the machining site, so the life of the groove is short. There was a problem that it was.

  Further, as the degree of integration of the semiconductor chips increases, the density of integrated circuits formed on the wafer 1 also increases, and the circuit portion in the wafer 1 also spreads to the peripheral portion, and the non-formation portion of the circuit at the edge 1a decreases. As the circuit forming part approaches the peripheral edge, the efficient use of the wafer 1 has progressed, and minimization of the waste part of the edge part and minimization of the waste rate of the edge part have been required. Therefore, it is necessary to reduce the edge shape and improve the processing accuracy, and a new development of a processing method and a processing apparatus for that purpose has been desired.

  The present invention has been made in view of the above-mentioned problems in the prior art, and the technical problem specifically set in order to solve this problem is necessary to improve the cross-sectional shape accuracy in chamfering processing of a wafer. It is an object of the present invention to provide a wafer chamfering method and apparatus capable of accurately forming a cross-sectional shape, shortening a processing time, and extending a life of a grindstone.

In order to identify a wafer chamfering method and apparatus capable of effectively solving the above-described problems in the present invention, all the matters recognized as necessary are covered and concretely configured problem solving means is shown below.
A first problem solving means relating to a wafer chamfering method is that a wafer is centered and placed on a rotary table, rotated, and two grooveless grindstones for processing the rotating wafer are provided at the peripheral edge of the wafer. A processing method of forming a workpiece by simultaneously processing a position adjacent to the same portion of the peripheral portion of the wafer by the processing surface of the rotating both-groove-free grindstone, In peripheral edge diameter reduction processing in which the outer diameter of the wafer is ground and reduced in the direction of reducing the diameter, the two groove-free grindstones are held in contact with the wafer while being held at a constant height, and the wafer is processed. In the contouring process in which the cross section of the peripheral edge is formed in a desired shape, the two grooveless grindstones are moved to the respective surfaces of the peripheral edge of the wafer, and the radial direction of the peripheral edge of the wafer is the same. Up It is characterized in simultaneously machining the respective surfaces sandwiched from.

  The second problem solving means related to the wafer chamfering method is the same as described above, wherein the orientation flat portion of the wafer is placed on a table formed so as to be reciprocally moved relative to the grindstone and movable on the plane. The two grooveless whetstones that process the orientation flat part by reciprocating relative to each other are arranged close to each other at the same position on the peripheral end of the orientation flat part, and are rotated relative to each other. A processing method for simultaneously processing and molding a position close to the same portion of the peripheral end portion of the orientation flat portion by the processing surface, and processing the end surface of the orientation flat portion in a direction to reduce the size In the peripheral edge reduction process, the two orientation grooves are held while the two groove-free grindstones are held at a certain height. In the contouring process in which the end face of the orientation flat part is processed into contact with the end face of the orientation flat part to form the cross section of the peripheral part of the orientation flat part into a desired shape, the same radial position at the peripheral end part of the orientation flat part is viewed from above and below. Each surface is sandwiched and processed at the same time.

  The third problem-solving means according to the wafer chamfering method is the same as the first or second problem-solving means according to the wafer chamfering method, wherein the two groove-free whetstones are processed in the contact point with the wafer. Are opposite to each other.

  The fourth problem-solving means related to the wafer chamfering method is the same as that described above, wherein the wafer is centered and placed on a rotary table, and the two groove-free grindstones for processing the rotating wafer are rotated. Rotate the rotation direction of each grooveless grindstone in the opposite direction at the point of contact with the wafer, and close to the same part of the part. In the processing method in which the positions close to the same part are simultaneously processed and formed, and in the peripheral edge reduction processing in which the outer shape of the wafer is ground and reduced in diameter, the two grooveless grindstones are respectively used. In the contouring process in which the wafer peripheral end portion is processed in contact with the wafer while being held at a constant height and the cross section of the wafer peripheral end portion is formed into a desired shape, the upper surface of the wafer peripheral end portion is formed on the two grooves. No grinding Processing and for the movement at the same time, divides the lower surface of the wafer peripheral edge machining and moving the two grooved grinding wheel at the same time, characterized in that to process the respective surfaces to each other.

  The fifth problem-solving means related to the wafer chamfering method is the same as described above, wherein the orientation flat portion of the wafer is placed on a table formed so as to be reciprocally moved relative to the grindstone and movable on the plane. The two grooveless whetstones that process the orientation flat part by reciprocating relative to each other are arranged close to each other at the same position on the peripheral end of the orientation flat part, and are rotated by the two grooveless whetstones. This is a processing method in which the direction is rotated in the opposite direction at the contact point with the wafer, and the position close to the same portion of the peripheral end portion of the orientation flat portion is simultaneously processed by the processing surface of the both-grooved grindstone. In the peripheral edge reduction processing in which the end face of the orientation flat portion is ground and processed in the direction of reducing the dimension, In the contouring process in which the cross section of the peripheral end portion of the orientation flat part is formed into a desired shape, the orientation flat part is processed in contact with the end face of the orientation flat part while holding each at a constant height. The process of moving the two grooveless grindstones simultaneously on the upper surface of the peripheral edge part and the process of moving the two grooveless grindstones simultaneously on the lower surface of the peripheral end part of the orientation flat part, The surface is processed separately.

  The sixth problem solving means related to the wafer chamfering method is the same as the first or fourth problem solving means related to the wafer chamfering method, and each time the wafer is chamfered, the next chamfering process is performed. When performing, chamfering is performed by changing the rotation direction of the wafer to the opposite direction.

  The seventh problem solving means related to the wafer chamfering processing method is the same as the first or fourth problem solving means related to the wafer chamfering processing method in the plate thickness direction accompanying the rotation of the wafer during the peripheral edge diameter reduction processing. In this case, the grooveless grindstone and the position of the wafer in the plate thickness direction are controlled so as to operate in the plate thickness direction in synchronization.

  The eighth problem-solving means according to the wafer chamfering method is the same as the seventh problem-solving means according to the wafer chamfering method. Synchronous control of the wafer and the grooveless grindstone with respect to the thickness direction control for producing the cross-sectional shape of the peripheral edge of the wafer during the contouring process is performed on the wafer side and the grooveless grindstone side. It is characterized by being divided and performed independently.

The ninth problem-solving means according to the wafer chamfering method is the same as the seventh problem-solving means according to the wafer chamfering method, in which the wafer and the grooveless grindstone against the positional deviation in the plate thickness direction accompanying the rotation of the wafer And the thickness direction control for producing the cross-sectional shape of the peripheral edge of the wafer include a grinding wheel side Z-axis direction moving device that moves in the plate thickness direction of the wafer, and a movement in the grinding wheel side Z-axis direction. It is characterized by performing multiple control with each grindstone moving device that individually moves each grindstone in the wafer thickness direction so as to be relatively movable in the wafer thickness direction with respect to the apparatus.

  The tenth problem solving means related to the wafer chamfering method is the same as the eighth problem solving means related to the wafer chamfering method, wherein the wafer and the groove-free grindstone against a positional deviation in the plate thickness direction accompanying the rotation of the wafer And the thickness direction control for producing the sectional shape of the peripheral edge of the wafer include a wafer side Z-axis direction moving device that moves in the plate thickness direction of the wafer, and the wafer side Z-axis direction movement. It is characterized by performing multiple control with each grindstone moving device moving in the plate thickness direction of the wafer so as to be relatively movable in the plate thickness direction of the wafer with respect to the apparatus.

  The eleventh problem solving means related to the wafer chamfering method is the same as the tenth problem solving means related to the wafer chamfering method, wherein the wafer side Z-axis direction moving device moves the wafer in the plate thickness direction according to the rotation of the screw. It is made to move to.

  The twelfth problem solving means related to the wafer chamfering processing method is the same as the tenth problem solving means related to the wafer chamfering processing method, in which the wafer side Z-axis direction moving device uses expansion / contraction of a piezoelectric element. Then, the wafer is moved in the plate thickness direction.

  A first problem solving means relating to a wafer chamfering apparatus includes a wafer placed concentrically on a rotary table, and two grooveless grindstones that are chamfered at the same time close to and away from the peripheral edge of the wafer. A wafer chamfering processing apparatus comprising the two grindstone moving devices, wherein the two groove-free grindstones are arranged close to each other and attached independently to be movable in the wafer plate thickness direction (Z-axis direction), A work placement table rotating device that is arranged below the rotary table and is operable in the rotational direction (θ direction) during chamfering, and the work placement table rotating device are placed on the rotary table in a concentric manner. A planar moving device that enables parallel movement of the placed wafer in the depth direction (Y-axis direction), and the whetstone side Z-axis direction in which the two whetstone moving devices are movably mounted together in the wafer plate thickness direction Z axis of any one of a moving device and a wafer side Z-axis moving device disposed between the workpiece mounting table rotating device and the planar moving device so as to be movable in the wafer plate thickness direction A direction moving device, and simultaneously processing a position adjacent to the same portion of the peripheral edge of the wafer by the processing surface of each grooved grindstone rotated, and the wafer and each grooveless grindstone during the processing The cross-sectional shape of the peripheral edge of the wafer is chamfered into a predetermined shape by relatively moving in a three-dimensional direction including the plate thickness direction.

  The second problem-solving means according to the wafer chamfering apparatus is the same as the first problem-solving means according to the wafer chamfering apparatus, wherein the planar moving device is a wafer placed concentrically on the rotary table. A plane moving device capable of moving in parallel in a plane by combining a left and right direction moving device that enables parallel movement in the left and right direction (X-axis direction) and a depth direction moving device that enables parallel movement in the depth direction (Y-axis direction); It is characterized by that.

  The third problem-solving means according to the wafer chamfering apparatus is the same as the first problem-solving means according to the wafer chamfering apparatus, wherein the two grindstone moving devices are configured such that each rotary shaft of the two disk-shaped grooveless grindstones has Two grindstone moving devices that are arranged in parallel to the orthogonal axis of the rotation axis of the rotary table, the two disc-shaped groove-less grindstones are arranged face to face, and are independently attached so as to be movable in the wafer plate thickness direction, The Z-axis direction moving device is a grindstone side Z-axis direction moving device in which the two grindstone moving devices are movably attached together in the wafer plate thickness direction.

  The fourth problem solving means related to the wafer chamfering processing apparatus is the same as the first problem solving means related to the wafer chamfering processing apparatus, in which the two grindstone moving devices are configured such that each rotary shaft of the two disk-shaped grooveless grindstones Two grindstone moving devices that are arranged in parallel to the orthogonal axis of the rotation axis of the rotary table, the two disc-shaped groove-less grindstones are arranged face to face, and are independently attached so as to be movable in the wafer plate thickness direction, The Z-axis direction moving device is a wafer-side Z-axis direction moving device that is disposed between the workpiece mounting table rotating device and the planar moving device so as to be movable in the wafer plate thickness direction. And

  The fifth problem solving means related to the wafer chamfering apparatus is the same as the first problem solving means related to the wafer chamfering apparatus, in which the two grindstone moving devices are configured such that the rotational axes of the two cup-shaped grooveless grindstones are Arranged parallel to the axis of the rotary table in the crossing direction of the rotation axis, the two cup-shaped groove-free grinding wheels are arranged in the vicinity of the same location on the peripheral edge of the wafer and moved independently in the wafer thickness direction. The two whetstone moving devices are movably attached, and the Z-axis direction moving device is a whetstone-side Z-axis direction moving device in which the two whetstone moving devices are movably attached together in the wafer thickness direction. And

  The sixth problem solving means related to the wafer chamfering apparatus is the same as the first problem solving means related to the wafer chamfering apparatus, in which the two grindstone moving devices are configured such that the rotational axes of the two cup-shaped grooveless grindstones are Arranged parallel to the axis of the rotary table in the crossing direction of the rotation axis, the two cup-shaped groove-free grinding wheels are arranged in the vicinity of the same location on the peripheral edge of the wafer and moved independently in the wafer thickness direction. Two whetstone moving devices that can be attached, and the Z-axis direction moving device is disposed between the workpiece mounting table rotating device and the plane moving device, and is attached to be movable in the wafer plate thickness direction. A side Z-axis direction moving device is provided.

  The seventh problem solving means according to the wafer chamfering apparatus is the same as the third or fifth problem solving means according to the wafer chamfering apparatus, wherein the wafer side Z-axis direction moving device is the workpiece mounting table rotating device. A motor-driven screw type linear moving device for moving the wafer in the plate thickness direction is arranged between the flat plate moving device and the planar moving device.

  The eighth problem solving means according to the wafer chamfering apparatus is the same as the third or fifth problem solving means according to the wafer chamfering apparatus, wherein the wafer side Z-axis direction moving device is the workpiece mounting table rotating device. And a plurality of piezoelectric actuators for moving the wafer in the plate thickness direction are arranged between the plane moving device and the plane moving device.

  In the first problem solving means related to the wafer chamfering method, chamfering that forms a predetermined cross-sectional shape with respect to the peripheral edge of the wafer irrespective of the presence or absence of a notch by relative movement between the grooveless grindstone and the wafer is performed. During processing, each grooveless grindstone can simultaneously process the peripheral edge of the wafer with respect to the upper and lower cross-sectional shapes, shortening the chamfering time, improving work efficiency and reducing wear of each grooveless grindstone. The service life of the grindstone can be extended.

  In the second problem solving means related to the wafer chamfering method, the chamfering that forms a predetermined cross-sectional shape on the orientation flat with respect to the wafer on which the orientation flat is formed by relative movement of the grooveless grindstone and the wafer. It is possible to process, and at the time of processing, each grooveless grindstone can simultaneously process the peripheral edge of the wafer with respect to the upper and lower cross-sectional shapes, shortening the chamfering processing time, improving work efficiency and reducing wear of each grooveless grindstone. This can extend the life of the grindstone.

  In the third problem solving means related to the wafer chamfering method, the processing directions at the contact points of the grooveless grindstones are opposite to each other, thereby suppressing the fluttering at the peripheral edge of the wafer and in the oblique direction during grinding / polishing. After the striations to be engraved are engraved with one grindstone, diagonal wrinkles in the opposite direction are engraved with the other grindstone, and the machining area becomes a surface where the striations intersect, thereby roughening the machining surface. Even if it is a thin wafer or a shape with a small cross-sectional slope angle at the peripheral edge of the wafer, the shape can be processed with high accuracy, and the cross-sectional shape at the peripheral edge of the wafer can be processed. The accuracy can be increased.

In the fourth problem-solving means related to the wafer chamfering method as described above, when the cross-sectional shape of the wafer peripheral edge is processed into an asymmetric shape at the top and bottom, for example, the grinding amount on the back (bottom) side is large, and the front (top) In the shape with a small amount of grinding on the side (FIG. 51 (B)), the two grindstones that operate together in the same direction shorten the processing time, reduce the wear of the grindstone, and the two grindstones. The amount of wear becomes the same, and the processing accuracy can be improved.
Also, at the point of contact with the wafer, the rotation directions of the two grooveless whetstones that are simultaneously in contact with each other are reversed, so that the two grooveless whetstones move together in the same direction to produce a cross-sectional shape. Sometimes, wafer flutter can be suppressed.
When the rotation directions of the two grooveless grinding stones are opposite to each other at the contact point with the wafer, the direction of the streak entering on the one hand becomes the opposite slant on the other side (see FIG. 7, FIG. 14), in the processing of the peripheral end surface to reduce the diameter, oblique striations intersect each other, the surface roughness becomes finer and the surface roughness can be improved, and the cross-sectional shape of the wafer peripheral end portion is produced. In the case of the contouring process, it is possible to obtain a surface having a small surface roughness as a whole by crossing the striations.

  In the fifth problem solving means related to the wafer chamfering processing method, when the cross-sectional shape of the wafer peripheral end portion is processed into an asymmetrical shape at the top and bottom, for example, the grinding amount on the back (bottom) side is large, and the front (top) In the shape with a small amount of grinding on the side (FIG. 51 (B)), the two grooveless grindstones are directed in the same direction even in the orientation flat portion processing and the contouring processing for producing the cross-sectional shape of the wafer peripheral end portion. Working together shortens the processing time, reduces the wear of the grindstone, and the wear amount of the two grindstones is the same, improving the machining accuracy and changing the rotation direction of the grindstone. By reversing each other at the point of contact with the wafer, the two groove-free whetstones work together in the same direction to reduce wafer fluttering when creating a cross-sectional shape. Surface roughness It is possible to obtain a small surface of.

  In the sixth problem solving means related to the wafer chamfering processing method, in addition to processing by rotating the rotation direction of each grooveless grindstone in opposite directions at the contact point with the wafer at the time of processing, In addition, since the rotation direction of the wafer is changed to the opposite direction, the wear of each non-grooved grindstone is made uniform, the life of the grindstone is prolonged, and the use of the uniformly worn grindstone enables high processing accuracy to be maintained. .

  In the seventh problem solving means relating to the wafer chamfering method, the grooveless grindstone and the runout of the peripheral edge of the wafer are always moved in the same plate thickness direction to be relatively at the same position in the chamfering process. Therefore, the chamfering process can be accurately performed, and the chamfering process can be performed on the peripheral edge portion of the wafer with high processing accuracy.

  In the eighth problem solving means relating to the wafer chamfering method, the position of the peripheral edge and the position of the grooveless grindstone accompanying the rotation of the wafer can be controlled independently, so that the wafer and the grooveless grindstone are synchronized. Controls to prevent fluttering at the peripheral edge of the wafer and increase the accuracy of chamfering, and control the thickness of the peripheral edge to produce a cross-sectional shape of the peripheral edge of the wafer by using two grooveless grindstones. At the same time, the wafer can be moved in the thickness direction of the wafer, and the required shape of the peripheral edge of the wafer can be obtained with high accuracy.

  In the ninth problem solving means related to the wafer chamfering processing method, each grooveless grindstone can follow the fluctuation caused by the positional fluctuation in the plate thickness direction of the peripheral end portion due to the rotation of the wafer by the Z axis direction movement control on the grindstone side. By controlling the movement of each grindstone at the following position, the grindstone without grooves can be moved accurately according to the trajectory for processing the cross-sectional shape of the peripheral edge of the wafer. To a predetermined cross-sectional shape.

  In the tenth problem solving means related to the wafer chamfering processing method, each grooveless grindstone can follow the position fluctuation in the plate thickness direction of the wafer peripheral edge accompanying the rotation of the wafer by the Z-axis direction movement control on the wafer side, By controlling the movement of each grindstone at the following position, each grooveless grindstone can be accurately moved in accordance with the trajectory for processing the cross-sectional shape of the wafer circumferential edge, and the circumferential edge of a thin wafer can be accurately moved to the specified cross-sectional shape. Can be processed.

  Further, in the eleventh problem solving means related to the wafer chamfering processing method, the movement by the nut portion side in the screw type linear movement control is used to reduce the fluctuation due to the position fluctuation in the thickness direction of the peripheral edge portion accompanying the rotation of the wafer. By following the trajectory for processing the cross-sectional shape of the peripheral edge of the wafer by controlling the movement of each grindstone at the following position, each grindstone without groove can be moved accurately, A thin wafer peripheral edge can be accurately processed into a predetermined cross-sectional shape.

  Further, in the twelfth problem solving means related to the wafer chamfering method, there is no groove by using expansion / contraction of the piezoelectric element to change due to positional fluctuation in the thickness direction of the peripheral edge of the wafer accompanying the rotation of the wafer. By following the trajectory for processing the cross-sectional shape of the peripheral edge of the wafer, the grindstone without a groove can be accurately moved by following the trajectory for processing the cross-sectional shape of the peripheral edge of the wafer by controlling the movement of the grindstone at the following position. In addition, a thin wafer peripheral edge can be accurately processed into a predetermined cross-sectional shape.

  In the first problem solving means related to the wafer chamfering apparatus, two grooveless grindstones arranged close to each other at the peripheral edge of the wafer are attached to each grooveless grindstone in the peripheral edge reduction processing for reducing the diameter of the wafer. In the contouring process in which the grindstone without both grooves is brought into contact with the wafer at the same height position by each grindstone moving device to process the peripheral edge of the wafer and the cross section of the edge of the wafer is formed into a desired shape, two grooves are formed. None The grindstone is moved independently to each surface of the wafer by the plane moving device, and the wafer is processed while being sandwiched from each surface, and the wafer is rotated by the work table rotation device when processing the peripheral edge of the wafer. In addition, when the wafer is rotated and moved in a plane, the workpiece placement table is used for processing the orientation flat linear portion of the wafer. Stop the rotation by the rolling device, and process the wafer by forming a notch or an orientation flat by processing the wafer by reciprocating relative to the two grooveless grindstones using a plane moving device. The part can be chamfered.

  In the second problem solving means relating to the wafer chamfering apparatus, the planar moving device is formed so as to be movable in parallel by a combination of a left and right direction moving device and a depth direction moving device. Contour that can reciprocate relative to the grindstone in a flat manner, and can be processed by moving the wafer side in the horizontal direction in the end face processing of the straight part of the orientation flat part. In the ring processing, the wafer side can be operated in accordance with the processing shape of the orientation flat portion by combining the wafer side with the left and right direction and the depth direction.

  In the third problem-solving means according to the wafer chamfering apparatus, the two disk-shaped groove-less grindstones arranged relatively close to the outer periphery of the wafer are relatively aligned in a plane parallel to the wafer on the rotary table. The two grinding wheels can move linearly in the wafer thickness direction independently, and the two disk-shaped groove-free grinding wheels can be moved simultaneously in the wafer thickness direction by the Z-axis movement device. By making it possible, the two grindstone moving devices and the Z-axis direction moving device can arbitrarily move the two disk-shaped grooveless whetstones in the vertical direction, the movement of the plane moving device, the two whetstone moving devices and the Z By combining movement with the axial movement device, three-dimensional processing can be performed, the wafer peripheral edge can be easily processed into a predetermined shape, and accuracy is high with no bias in the grinding wheel wear. It can chamfering.

  In the fourth problem solving means according to the wafer chamfering apparatus, the two disk-shaped groove-less whetstones arranged relatively close to the outer periphery of the wafer are relatively aligned in a plane parallel to the wafer on the rotary table. Can be revolved in the wafer thickness direction by the two grindstone moving devices, respectively, and the wafer side plate can be moved relative to the two disk-shaped grooveless grindstones by the wafer side Z-axis direction moving device. By enabling linear movement in the thickness direction, three-dimensional processing can be performed by combining each movement of the plane moving device, the two grindstone moving devices, and the wafer side Z-axis direction moving device. Can be easily machined into a predetermined shape, and chamfering can be accurately performed in a state in which there is no bias in the wear of the grindstone.

  In the fifth problem solving means according to the wafer chamfering apparatus, the two cup-shaped groove-free grindstones arranged very close to the outer periphery of the wafer can revolve relatively in a plane parallel to the wafer on the rotary table. In addition, the wafer peripheral edge can be moved in a straight line in the thickness direction of the wafer, and the wafer peripheral edge can be processed in three dimensions by two cup-shaped groove-free grindstones. In addition to being able to process, chamfering can be performed with high accuracy in a state where the wear of the grindstone is not biased.

  In the sixth problem solving means according to the wafer chamfering apparatus, the two cup-shaped groove-free grindstones arranged very close to the outer periphery of the wafer can revolve relatively in a plane parallel to the wafer on the rotary table. Furthermore, the wafer side Z-axis direction moving device allows the two cup-shaped groove-free whetstones to move linearly in the wafer thickness direction, and the two cup-shaped groove-free whetstones are used to three-dimensionalize the wafer peripheral edge. The peripheral edge of the wafer can be easily processed into a predetermined shape, and chamfering can be performed with high accuracy in a state where there is no bias in the abrasion of the grindstone.

  The seventh problem solving means related to the wafer chamfering apparatus is the same as the third and fifth problem solving means related to the wafer chamfering apparatus, and the wafer side Z-axis direction moving device is constituted by a motor-driven screw type linear moving device. Since the wafer can be moved in the plate thickness direction, the wafer can be moved smoothly in the vertical direction, the three-dimensional processing can be made more uniform, and the peripheral edge of the wafer can be shaped into a predetermined shape. It can be processed with high accuracy.

  Further, in the eighth problem solving means related to the wafer chamfering apparatus, a plurality of piezoelectric actuators are arranged as a wafer side Z-axis direction moving device in the third and fifth problem solving means related to the wafer chamfering processing apparatus. It is possible to smoothly follow the relative position between the wafer and each grooveless grindstone at the time of processing at a high speed and smoothly move the wafer in the vertical direction with respect to the two grooveless grindstones. Three-dimensional processing can be made more uniform, and the peripheral edge of the wafer can be processed into a predetermined shape quickly and accurately.

Hereinafter, the best embodiment according to the present invention will be described in detail.
However, this embodiment is specifically described for better understanding of the gist of the invention, and does not limit the content of the invention unless otherwise specified.
Moreover, the same thing as what was demonstrated by background art like a wafer etc. uses the same name and code | symbol, and abbreviate | omits description.

[Chamfering method]
A chamfering method using a disk-shaped grooveless grindstone shown in FIGS. 1 to 7 or a cup-shaped grooveless grindstone shown in FIGS.
[First Embodiment]
As a first embodiment of the chamfering method, a case where a disc-shaped grooveless grindstone is used will be described.
〔Constitution〕
The first embodiment is a method of performing grinding and polishing for finishing using the two disk-shaped grooveless grindstones 3 and 3 shown in FIGS. 1 to 7, and the outer peripheral surface of the disk-shaped grooveless grindstone 3 and 3 is a wafer. 1 is a contact surface with one, and two wafers 3 and 3 without grooves are simultaneously contacted with one wafer 1 for chamfering.

A wafer 1 is placed concentrically on a rotary table 2a (see FIG. 5) provided on the work mounting base 2, and the wafer 1 rotating together with the rotary table 2a is simultaneously chamfered by two disc-shaped grooveless grindstones 3 and 3. To do.
The two disk-shaped grooved grindstones 3 and 3 are arranged so as to be close to the same portion of the peripheral end 1b and the side surfaces facing each other are closely spaced relative to each other. The surface is simultaneously brought into contact with the wafer 1 as a processed surface, and a position close to the same portion of the edge (the peripheral end portion of the wafer 1) 1a is simultaneously processed and molded (see FIGS. 1, 2, and 7).

1. Processing direction In the wafer chamfering method, the two grooveless grindstones 3 and 3 are processed by determining the rotation direction of each grooveless grindstone 3 and 3 so that the processing directions at the contact point with the wafer 1 are opposite to each other. To do.
2. Grinding wheel operation Each grinding wheel depends on the type of processing and the shape of the edge of the wafer 1 to be processed. (1) When moving in the same direction at the same time (2) When moving in different directions Divided.

(1) When moving two whetstones in the same direction at the same time
(a) Peripheral end processing When processing a wafer having a notch 1n (see FIG. 1), in the peripheral end reduced diameter processing in which the outer diameter of the wafer 1 is ground and reduced in diameter, two grooveless grindstones 3 are used. , 3 are kept in contact with the wafer 1 while being held at a constant height (see FIGS. 3 and 4).
In this case, when processing the wafer 1 formed by the upper and lower inclined surfaces 1au and 1ad and the circular arc 1c having a single radius R1 at the peripheral end 1b, two disc-shaped grooveless grindstones are used. 3 and 3 are processed at the same height (see FIG. 3).

  Also, the cross-sectional shape of the edge 1a is an upper and lower slopes 1au, 1ad, a peripheral edge 1b that is a vertical surface, and arcs 1c, 1c respectively connected to upper and lower corners having the same radius R2 therebetween, When processing the wafer 1 formed by the above, the height of each of the two disk-shaped grooveless grindstones 3 and 3 is made different so that the peripheral end 1b is processed as a substantially vertical surface, The wafer 1 is rotated while holding the positions of the disc-shaped grooveless grindstones 3 and 3, respectively, and the peripheral edge is processed (see FIG. 4).

(b) OF end face processing (When processing the orientation flat, refer to Fig. 2)
Two grooveless grindstones 3 and 3 for machining the orientation flat 1f are arranged close to the same portion of the orientation flat 1f and facing each other, and the rotational directions of both grooveless grindstones 3 and 3 are set. The wafers 1 are rotated in opposite directions at the contact point with the wafer 1, and the positions close to the same portion of the orientation flat 1 f are simultaneously processed and formed by the processed surfaces of the both-grooved grindstones 3 and 3.

  At this time, in the end face processing of the end face that grinds the end face of the orientation flat 1f to reduce the size, the two grooveless grindstones 3 and 3 are held at a constant height on the end face of the orientation flat 1f. The wafer 1 is translated and processed into a flat surface by two rotating grooveless grindstones 3 and 3 in contact (see FIG. 3), and the two grooveless grindstones 3 and 3 are held at different heights. The wafer 1 is brought into contact with the end face of the orientation flat 1f as it is, and the wafer 1 is translated and processed into a flat surface by two rotating grooveless grindstones 3 and 3 (see FIG. 4), and the peripheral end (or peripheral end face) 1b. Are formed substantially vertically.

(c) Contouring of the top and bottom asymmetric peripheral edges When processing the top and bottom asymmetric peripheral edges (see Fig. 51 (B)), the two grooved grindstones 3 and 3 are simultaneously operated in the same direction. In some cases, it can be processed more efficiently. In such a case, the grooveless grindstones 3 and 3 are not moved separately, and the same operation is performed as if the two grooveless grindstones 3 and 3 are integrally formed.
In this case, when the circumferential end (or circumferential end surface) 1b of the circumferential portion of the wafer 1 having the notch 1n or the circumferential portion of the wafer 1 having the orientation flat 1f is machined, there are no two grooves for machining the wafer 1. The grindstones 3 and 3 are arranged close to the same portion of the circumferential end (or circumferential end surface) 1b, and the side surfaces facing each other of the grooveless grindstones 3 and 3 are disposed so as to face each other. The direction is rotated in the opposite direction at the contact point with the wafer 1, and the position close to the same portion of the peripheral end (or peripheral end surface) 1 b is simultaneously processed and formed by the processing surfaces of the both-grooved grindstones 3 and 3.

(2) When the moving directions of the two wheels are different
(a) Contouring of the circumferentially symmetric peripheral edge In contouring that forms the cross section of the edge 1a into a desired shape, each of the two grooveless grindstones 3 and 3 is moved to each surface of the edge 1a. Then, the same location in the radial direction of the edge 1a is sandwiched from above and below by the grooveless grindstones 3 and 3, and the respective surfaces are processed simultaneously (see FIGS. 5 and 6).
In the case of contouring, when the cross-sectional shape of the edge 1a is vertically symmetric, the two disk-shaped groove-free grindstones 3 and 3 are operated separately, and when one is processing the upper side of the wafer, the other is the wafer The lower side is processed to process the cross-sectional shape of the edge 1a while suppressing the fluttering or vertical movement of the wafer 1 (see FIGS. 5 and 6).

  Further, in the case of the contouring process in which the cross section of the edge 1a of the wafer 1 having the orientation flat 1f is formed in a vertically symmetrical shape with a desired shape, two identical portions in the radial direction including both ends of the orientation flat 1f are provided. The same portion in the radial direction of the edge 1a is sandwiched from above and below by the grooveless grindstones 3 and 3, and the respective surfaces are processed simultaneously (see FIGS. 5 and 6).

(b) Contouring processing of a vertically asymmetric peripheral edge When the cross-sectional shape of the edge 1a is a vertically asymmetrical shape, when the two grooveless grindstones 3 and 3 are moved separately, the vertical asymmetrical shape is usually In this case, it is more efficient to move the two grooveless grindstones 3 and 3 simultaneously in the same direction, but when the grooveless grindstones 3 and 3 cannot be moved simultaneously in the same direction for some reason. In the same manner as the contouring process of the circumferentially symmetric peripheral ends in (a), the same portion in the radial direction of the edge 1a is sandwiched from above and below by the grooveless grindstones 3 and 3, and the upper and lower surfaces are simultaneously processed.

[Function and effect]
In the first embodiment of the chamfering method configured as described above, when the edge 1a of the wafer 1 is processed using the two disk-shaped grooveless grindstones 3, 3, the wafer 1 and the disk-shaped grooveless grindstone 3, 3 are used. Can be chamfered to form a predetermined cross-sectional shape on the edge 1a of the wafer 1 regardless of the presence or absence of the notch 1n.
At the time of processing, the grooveless grindstones 3 and 3 can simultaneously process the edge 1a of the wafer 1 with respect to the upper and lower cross-sectional shapes. In the case of this upper and lower simultaneous processing, the fluttering of the wafer 1 is suppressed, as shown in FIG. In this way, after the streak 1d engraved in the oblique direction at the time of grinding and polishing is engraved by one grindstone, it can be machined so that the opposite oblique streak 1e can be engraved by the other grindstone. Even if it is a shape with a small cross-sectional slope angle at the thin wafer 1 or the edge 1a of the wafer 1, the surface becomes a crossed surface of the streak, the surface roughness of the processed surface is reduced and made fine. It can be formed by processing well, and the processing accuracy of the cross-sectional shape can be increased.

Moreover, the fluttering of the wafer 1 can be suppressed by reversing the rotational directions of the grooveless grindstones 3 and 3 at the contact point with the wafer 1 at the same time. Further, the processing marks 1d and 1e intersect each other, the surface roughness of the processed surface can be reduced and made finer, and the processing accuracy of the cross-sectional shape can be increased.
Further, in addition to reversing the rotation directions of the two grooveless grindstones 3 and 3 that are simultaneously in contact with each other at the contact point with the wafer 1, the rotation direction of the wafer 1 is reversed every time the wafer 1 is processed. By machining in the direction, the wear of each of the grooveless grindstones 3 and 3 is made uniform, the life of the grindstone is lengthened, and the wear is made uniform, so that high machining accuracy can be maintained.

  In addition, when each of the grooveless grindstones 3 and 3 is moved relative to each other in the same direction at the same time as in the orientation flat or the chamfering process of the upper and lower asymmetric shapes, only the flat portion is processed or the edge of the wafer 1 is processed. Even if the upper surface side and the lower surface side of 1a are processed separately, the rotation directions of the two grooveless grindstones 3 and 3 can be reversed to suppress the fluttering of the wafer 1 and the rotation of the wafer 1 By rotating the direction backward with respect to the two grooveless grinding stones 3 and 3 every time processing is performed, the wear state of each of the grooveless grinding stones 3 and 3 becomes uniform, the life of the grinding wheel is lengthened, and the wear state is uneven. It is possible to increase the processing accuracy of the cross-sectional shape by processing with a whetstone shape without any cross section.

[Second Embodiment]
As a second embodiment of the chamfering method, a case where a cup-shaped grooveless grindstone is used will be described.
〔Constitution〕
The second embodiment is a method of performing finishing grinding and polishing using the two cup-shaped grooveless grindstones 4, 4 shown in FIGS. 8 to 14. The facing end surfaces 4a and 4a are contact surfaces with the wafer 1, and the end surfaces 4a and 4a of the two cup-shaped grooveless grindstones 4 and 4 are simultaneously brought into contact with the wafer 1 for chamfering.

The wafer 1 is placed concentrically on the rotary table 2a (see FIGS. 31 and 33), and the wafer 1 rotating together with the rotary table 2a is simultaneously chamfered by the end faces 4a and 4a of the two cup-shaped grooveless grinding stones 4 and 4. To do.
The two cup-shaped grooveless grindstones 4, 4 are arranged so as to be close to the same portion of the peripheral end 1 b of the wafer 1, and so that the circumferential surfaces facing each other are close to each other. 4 are simultaneously abutted against the wafer 1 using the end surfaces 4a and 4a as processing surfaces, and simultaneously processed and molded at positions close to the same portion of the edge (the peripheral end portion of the wafer 1) 1a (see FIGS. 8 and 9). .

1. Processing direction In the wafer chamfering method, the rotational directions of the cup-shaped grooveless grinding stones 4, 4 are set so that the processing directions at the contact points with the wafer 1 are opposite to each other. Determine and process. In this case, the processing directions at the contact point with the wafer 1 are opposite to each other by rotating the cup-shaped grooveless grindstones 4 and 4 in the same direction.

2. Grinding wheel operation Each grinding wheel depends on the type of processing and the shape of the edge of the wafer 1 to be processed. (1) When moving in the same direction at the same time (2) When moving in different directions Divided.
3. Relative size of processing wheel and wafer
(1) There is no particular limitation on the size of the peripheral edge of the wafer 1, but (2) When processing the orientation flat, the end faces of the cup-shaped grooveless grinding stones 4, 4 are parallel to the wafer 1. The mutual size must be determined so that the end opposite to the processing end does not hit by the movement.

  For example, as shown in FIG. 10, a combination of two cup-shaped grooveless grindstones 4, 4 for processing the peripheral edge of the wafer 1 having a diameter of 300 mm, in which the rotation axes of the cup-shaped grooveless grindstones 4, 4 are parallel, When processing the orientation flat of the wafer 1 shown in FIG. 11 using the same grindstone in the same arrangement, the end faces of the cup-shaped grooveless grindstones 4 and 4 are opposite to the machining end due to the parallel movement of the wafer 1. In order to prevent the portion from hitting, it is necessary that the diameter of the wafer 1 is 200 mm and the flat portion has a maximum length of about 57.5 mm.

  The relationship between each cup-shaped grooveless grindstone 4, 4 and the wafer 1 is that the distance from the center of the wafer 1 to the rotation shafts 4b, 4b of each cup-shaped grooveless grindstone 4, 4 is the same distance Xa, Xb (see FIG. 12), the distances Za and Zb from the upper surface of the wafer 1 to the centers of the cup-shaped grooved grindstones 4 and 4 respectively correspond to the radii Ra and Rb of the cup-shaped grooved grindstones 4 and 4, respectively. Based on this, positioning is performed so that the processing angle at the contact point with the wafer 1 is less likely to cause fluttering, and the height is set to match the position (see FIG. 13).

(1) When moving two whetstones in the same direction at the same time
(a) Peripheral end processing When processing the wafer 1 having the notch 1n (see FIG. 8), in the peripheral end reduction processing in which the outer diameter of the wafer 1 is ground to reduce the diameter, two cup-shaped grooves are used. The none grindstones 4 and 4 are processed while being brought into contact with the wafer 1 while being held at a certain height (see FIGS. 8, 13 and 14).
In this case, when processing the wafer 1 (see FIG. 49) formed by the upper and lower inclined surfaces 1au, 1ad and the circular arc 1c having a single radius R1 at the peripheral end 1b, two edges 1a are processed. The cup-shaped grooveless grindstones 4 and 4 are processed while being held at the same height (see FIG. 13 or FIG. 14).

  Also, the cross-sectional shape of the edge 1a is an upper and lower slopes 1au, 1ad, a peripheral edge 1b that is a vertical surface, and arcs 1c, 1c respectively connected to upper and lower corners having the same radius R2 therebetween, When processing the wafer 1 (see FIG. 50) formed by the above, the height of each of the two cup-shaped groove-free grindstones 4, 4 is made the same or different, and the peripheral end (or peripheral end surface) ) The peripheral edge is processed by rotating the wafer 1 while keeping the position of each of the cup-shaped grooveless grindstones 4 and 4 at a position where 1b is processed as a substantially vertical surface.

(b) OF end face processing Two cup-shaped grooveless grindstones 4 and 4 for processing the orientation flat 1f are arranged close to the same portion of the orientation flat 1f, the opposed peripheral surfaces are close to each other, and both cup-shaped grooves When the rotation directions of the non-grinding stones 4 and 4 are rotated in the same direction, the machining directions are opposite to each other at the point of contact with the wafer 1, and the orientation flat 1f is formed by the machining surface d of both cup-shaped grooveless grinding stones 4 and 4. A position close to the same location is simultaneously processed and molded (see FIG. 9).

  At this time, in the OF end face processing in which the end face of the orientation flat 1f is ground and processed in the direction of reducing the size, the two cup-shaped grooveless grindstones 4 and 4 are held at a certain height, respectively. Either the wafer 1 is moved in parallel (in the direction XX in the figure) by the two cup-shaped grooveless grindstones 4 and 4 which are in contact with the end face and rotated into a plane (see FIG. 9). With the grooveless grindstones 4 and 4 held at different heights, they are brought into contact with the end face of the orientation flat 1f, and the two cup-shaped grooveless grindstones 4 and 4 rotate to translate the wafer 1 into a flat surface. Processing (see FIG. 4) forms the peripheral end (or peripheral end surface) 1b substantially vertically.

(c) Contouring of the top and bottom asymmetric peripheral edges When processing the top and bottom asymmetric peripheral edges (see Fig. 51 (B)), the two cup-shaped grooveless grindstones 4 and 4 are placed in the same direction. In some cases, it can be processed more efficiently when operated simultaneously. In such a case, it is avoided to move each cup-shaped grooveless grindstone 4, 4 separately, and the same operation is performed as if the two cup-shaped grooveless grindstones 4, 4 are integrally formed. .

  In this case, when the circumferential end (or circumferential end surface) 1b of the circumferential portion of the wafer 1 having the notch 1n or the circumferential portion of the wafer 1 having the orientation flat 1f is machined, there are no two grooves for machining the wafer 1. The grindstones 3 and 3 are arranged close to the same portion of the circumferential end (or circumferential end surface) 1b, the circumferential surfaces facing each other of the cup-shaped grooveless grindstones 4 and 4 are arranged close to each other, and each cup-shaped grooved grindstone 4 , 4 are rotated in the same direction around the axis and processed in opposite directions at the contact point with the wafer 1, and the peripheral end (or peripheral end surface) is formed by the processing surfaces of both cup-shaped grooveless grinding stones 4, 4. A position close to the same location of 1b is simultaneously processed and molded.

(2) When the moving directions of the two wheels are different
(a) Contouring of vertically symmetrical peripheral edges In the contouring process for forming the cross section of the edge 1a into a desired shape, each of the two cup-shaped grooveless grindstones 4 and 4 is separately provided on each surface of the edge 1a. The same position in the radial direction of the edge 1a is sandwiched from above and below by the cup-shaped grooveless grindstones 4 and 4, and each surface is processed simultaneously.
In the case of contouring, when the cross-sectional shape of the edge 1a is vertically symmetric, the two cup-shaped groove-free grindstones 4 and 4 are operated separately, and when one is processing the upper side of the wafer, the other is the wafer The lower side is processed to process the cross-sectional shape of the edge 1a while suppressing the fluttering or vertical movement of the wafer 1.

  Further, in the case of the contouring process in which the cross section of the edge 1a of the wafer 1 having the orientation flat 1f is formed in a vertically symmetrical shape with a desired shape, two identical portions in the radial direction including both ends of the orientation flat 1f are provided. The same location in the radial direction of the edge 1a is sandwiched from above and below by the cup-shaped grooveless grindstones 4 and 4, and each surface is processed simultaneously.

(b) Vertically asymmetrical contouring of the peripheral edge When the cross-sectional shape of the edge 1a is vertically asymmetrical, when the two cup-shaped grooved grindstones 4, 4 are moved separately, this vertical asymmetrical is usually In the case of the shape, it is more efficient to move and process the two cup-shaped grooved grindstones 4 and 4 simultaneously in the same direction. However, for some reason, both cup-shaped grooved grindstones 4 and 4 are simultaneously moved to the same direction. When it cannot be moved, like the contouring process of the vertically symmetrical peripheral edge in (a), the same radial position of the edge 1a is sandwiched from above and below by the cup-shaped grooved grindstones 4 and 4 and Process each side simultaneously.

[Function and effect]
In the second embodiment of the chamfering method configured as described above, when the edge 1a of the wafer 1 is processed using the two cup-shaped grooveless grindstones 4, 4, the wafer 1 and each cup-shaped grooveless grindstone 4, 4 can be chamfered to form a predetermined cross-sectional shape on the edge 1a of the wafer 1 regardless of the presence or absence of the notch 1n.
At the time of processing, each cup-shaped groove-free grindstone 4, 4 can simultaneously process the edge 1a of the wafer 1 with respect to the upper and lower cross-sectional shapes. In the case of this upper and lower simultaneous processing, the fluttering of the wafer 1 is suppressed. As shown in Fig. 1, after the streak 1d engraved in the oblique direction at the time of grinding and polishing is engraved by one cup-shaped grooveless grindstone 4, the other oblique slanted line by the cup-shaped grooved grindstone 4 1e can be processed so as to be engraved, and the processed portion becomes a surface where the streak intersects, the surface roughness of the processed surface is reduced and made finer, and the wafer 1 having a small thickness or the edge 1a of the wafer 1 is formed. Even a shape with a small cross-sectional slope angle can be processed and formed with high accuracy, and the processing accuracy of the cross-sectional shape can be increased.

Further, in each cup-shaped grooveless grindstone 4, 4, the fluttering of the wafer 1 is suppressed by reversing the processing directions of the two cup-shaped grooveless grindstones 4, 4 that simultaneously abut at the contact point with the wafer 1. In addition, the processing marks 1d and 1e intersect each other, the surface roughness of the processed surface can be reduced and made finer, and the processing accuracy of the cross-sectional shape can be increased.
Further, in addition to reversing the processing directions of the two cup-shaped grooveless grindstones 4 and 4 that simultaneously abut at the contact point with the wafer 1, the rotation direction of the wafer 1 is changed for each processing of the wafer 1. By processing in the opposite direction, the wear of each cup-shaped grooveless grindstone 4, 4 is made uniform, the life of the grindstone is lengthened, and high work accuracy can be maintained by making the wear uniform.

  In addition, when each of the cup-shaped grooved grindstones 4 and 4 is moved relative to each other in the same direction at the same time, such as in the orientation flat or the chamfering of the upper and lower asymmetric shapes, only the flat portion is processed or the wafer 1 is processed. Even if the upper surface side and the lower surface side of the edge 1a are processed separately, it is possible to suppress the fluttering of the wafer 1 by reversing the processing directions of the two cup-shaped grooveless grindstones 4 and 4, By rotating the rotation direction of the wafer 1 reversely for each processing with respect to the two cup-shaped grooveless grinding wheels 4, 4, the wear state of each cup-shaped grooveless grinding stone 4, 4 becomes uniform, and the life of the grinding wheel is increased. The processing accuracy of the cross-sectional shape can be increased by increasing the length and processing with a grindstone shape that does not cause uneven wear.

[Chamfering equipment]
As for the chamfering processing apparatus, several chamfering processing apparatuses using the disk-shaped grooveless whetstone shown in FIGS. 1 to 7 or the cup-shaped grooveless whetstone shown in FIGS. I will explain it.
[First Embodiment]
As a first embodiment of the chamfering apparatus, a first chamfering apparatus 10 using the disk-shaped grooveless grindstone shown in FIGS. 15 to 20 will be described.

〔Constitution〕
A chamfering apparatus 10 using two disc-shaped grooved grindstones 3 and 3 is a device for chamfering an edge (peripheral end) 1a of a wafer 1, and includes two disc-shaped grooved grindstones 3 and 3. Are arranged in close proximity to each other and the peripheral surface is used as a machining surface, so that a straight line passing through the center of the wafer 1 and a disc-shaped grooveless grindstone 3, 3 pass through the center of the wafer 1. It forms so that the center on arrangement | positioning may correspond.
As a result, the two disc-shaped grooveless grindstones 3 and 3 can always be arranged at the left and right equidistant positions from the center line with respect to the wafer 1 so that grinding and polishing can be processed equally on the left and right.

Each of the disc-shaped grooved grindstones 3 and 3 is a straight line that is perpendicular to the wafer center axis and further perpendicular to the radial direction, or a straight line that is parallel to the wafer rotation surface and does not intersect the wafer center axis. A grinding wheel drive having a rotation axis parallel to a straight line that passes through the axis of the rotary table 2a on which the wafer 1 is placed and extends in the depth (Y-Y) direction (belt driven by a spindle motor for precision grinding). Wheel support device 11, 11 provided with devices 11 a, 11 a, and this wheel support device 11, 11 can be moved up and down (Z-Z) independently (with a Z-axis motor for precision grinding). 12 and 12.
Furthermore, each grindstone elevating device 12, 12 securely fixes the fixed side member of the grindstone elevating device 12, 12 to the base 13 so that the reference is not shaken, and supports the movable side member so that it can be raised and lowered. The entire base 13 provided with 12 and 12 is supported in a vertically movable (with Z axis motor for machining side elevation) vertical movement (with a Z axis motor for machining side elevation) so as to be movable up and down.

  On the work support device 15 side, a work table 2a on which a wafer 1 is placed and a work table 2a that rotates the turntable 2a (with a θ-axis motor) 2b (see FIG. 19) is incorporated. Is mounted on rails 17a and 17a extending to move the pedestal 17 linearly in the depth (Y-Y) direction and moved in the depth direction. Depth direction moving bodies 17b, 17b to be moved linearly and a depth direction moving apparatus 17c (with a Y-axis motor) as a driving device thereof, and rails 17a, 17a, depth direction moving bodies 17b, 17b, and a depth direction moving apparatus 17c are mounted. Left and right movement that is placed on rails 17d and 17d extended to move linearly in the left and right (XX) direction and moves linearly in the left and right direction 17e and 17e and a lateral movement device 17f (with an X-axis motor) as a driving device therefor, the wafer 1 is rotated and moved to a position where two disc-shaped groove-free grindstones 3 and 3 are provided. So that it can be chamfered.

  In order to perform roughing before finishing with this processing apparatus 10, a grindstone provided with a roughing grindstone 6 and a rod-shaped (or drill-shaped) grindstone 7 (with a Z-axis motor for rough grinding). The vertical movement device 8 is disposed on the front side of the position where the disk-shaped grooveless grindstones 3 and 3 are provided, and is provided so as to be movable to a high position where there is no hindrance to the finishing process of the wafer 1 after roughing, Even if the edge 1a of the wafer 1 is roughed, it is moved upward after roughing and moved to a position where there is no hindrance to finishing, so that finishing can be performed immediately after roughing.

  A control device for controlling the operation of each of these grindstones 3 and 3, each grindstone driving device 11 a and 11 a, each lifting and lowering device 12, 12 and 14, each moving device 17 c and 17 f, and the like is shown in FIG. As shown in the system diagram, an initial value setting or the like is input from an operation panel 19a provided in the control box 19, and a chamfering operation is controlled based on the setting. The grindstone elevating devices 12 and 12, the machining elevating device 14 and the rotary table 2a each incorporating a control unit provided on the processing apparatus main body side via the control signal output unit 19c are rotated from the control unit 19b using a control device. The work mounting table 2 including the work mounting table rotating device 2b to be operated, and the rack provided with the depth direction moving device 17c and the left and right direction moving device 17f Against 17 etc., and sends a control signal to the operation instruction.

  As shown in FIGS. 19 and 20, the control box 19 includes a liquid crystal monitor, a keyboard, a PBS (push button switch), etc., and sets necessary initial conditions for the operation of each control device from the input unit. An operation panel 19a is designated, which gives instructions for machining operations to be performed in accordance with the control procedure, and enables monitoring of conditions necessary for chamfering such as setting conditions, machining conditions, initial state and operation status, and the status of each apparatus. The workpiece mounting base 2 including the grinding wheel driving devices 11a and 11a and the grinding wheel lifting and lowering devices 12 and 12, the processing side lifting and lowering device 14, and the workpiece mounting table rotating device 2b that rotate the disk-shaped grooveless grinding wheels 3 and 3 according to the set conditions. , And the operating conditions of the gantry 17 provided with the depth direction moving device 17c and the left and right direction moving device 17f should be set and transmitted. And a control unit 19b defining a signal, and a control signal output section 19c for sending a control signal necessary to perform the operation specified in response to an output signal from the control unit 19b.

As shown in FIG. 20, each control device starts a robot Z-axis motor, a suction arm R-axis motor or a loader actuator to transfer the wafer 1 from the standby position to the turntable 2a, and aligns (θ axis, Y Axis) Actuate the motor to clarify the eccentricity and correct the eccentricity to align the axis, move the wafer 1 to the processing position together with the rotary table 2a, and align the notch 1n or orientation flat 1f. Wafer that determines the initial processing position from the position, rotates at high speed for finishing the outer peripheral edge as required, and after cleaning the surface after processing, transfers the finished wafer 1 to the integrated position of the processed wafer 1 Control device 9a, wafer rotation direction, left-right direction (X-axis direction), depth direction (Y-axis direction), finishing up-down direction (Z Wafer processing control device 9b that collects control devices for individually controlling the operation direction, etc., and a grindstone that is added for rough machining performed before precision machining of the wafer 1 (with a Z axis motor for rough grinding). A wafer roughing control device 9c that collects devices to be controlled (a general grinding wheel rough grinding motor 6a, a rod-shaped grinding wheel rough grinding motor 7a, etc.) disposed in the vertical movement device 8; And a notch precision machining control device 9d in which the control devices of the respective driving devices for precisely machining the notch 1n for determining the upper reference position are provided.
These control devices 9a to 9d are controlled based on the control signal output from the control signal output unit 19c, and the necessary drive devices 11 to 17 are activated so that each operates in harmony with the other drive devices. Controlled.

[Function and effect]
When chamfering the wafer 1 using the chamfering apparatus 10, first, the robot Z-axis motor, loader actuator, or suction in the wafer setting controller 9a is sent from the controller 19b via the control signal output unit 19c. When the arm is driven, one wafer 1 is taken out from the individually stacked wafers 1 or the wafers 1,..., 1 stored in the cassette, transferred to the turntable 2 a, and when roughing is finished Further, in accordance with an instruction from the control unit 19b, the depth direction moving device (Y-axis motor) 17c is driven by the control signal output from the control signal output unit 19c, and the rotary table 2a on which the wafer 1 is mounted is shown in FIGS. The wafer 1 is moved from the wafer preparation position shown to the precision machining position of the wafer 1 shown in FIGS. 15 and 18, and after the movement, the diameter of the peripheral edge is reduced. When rough machining is required, the rough grinding is moved to a position just below the position where the rough grinding stone 6 or the rod-shaped grinding stone 7 is arranged, and then the precision machining position is entered to start the precision machining.

  At the time of peripheral diameter reduction processing, the two grinding wheel lifting devices (Z-axis motors) 12 and 12 are driven by the control signal output from the control signal output unit 19c according to the instruction from the control unit 19b, and the shape of the peripheral end is determined. As shown in FIG. 3 or FIG. 4, the position of each disc-shaped groove-less grindstone 3 or 3 with respect to the wafer 1 is determined and arranged, the workpiece mounting table rotating device (θ-axis motor) 2b of the wafer processing control device 9b and each Both the wheel drive devices (spindle motors for precision grinding) 11a and 11a of the disk-shaped grooveless grindstone 3 are started, and the rotation of each disk-shaped grooveless grindstone 3 and 3 is adjusted to the rotation speed at the time of the peripheral diameter reduction processing. The rotation of the wafer 1 and the rotation of the disc-shaped grooveless grindstones 3 and 3 are appropriately controlled to accurately grind, and after approaching the required diameter, the wafer 1 is switched to a precise polishing operation (spark out). Edge 1a Processed to fit the size of an object definitive wafer diameter.

  Subsequently, contouring is performed. At the time of the contouring process, as shown in FIGS. 5 and 6, the upper and lower surfaces of the wafer 1 are sandwiched by the disc-shaped grooveless grindstones 3 and 3, respectively, and the disc-shaped grooveless grindstones 3 and 3 positioned above and below are respectively Processing while adjusting the relative position independently. The relative position is adjusted by adjusting the operation of the grinding wheel lifting / lowering device (precise grinding upper grinding wheel Z-axis motor) 12 of the precision grinding upper wheel by the Z-axis control signal output from the control signal output unit 19c. The operation of the grinding wheel lifting / lowering device (the precision grinding lower grinding wheel Z-axis motor) 12 of the precision grinding lower grinding wheel 12 is adjusted by the Z-axis control signal output from the control signal output unit 19c to deform and vibrate the wafer 1. Contouring processing is performed while the position deviation due to fluttering etc. is suppressed by each disk-shaped grooveless grindstone 3, 3 and the position of each disk-shaped grooveless grindstone 3, 3 is adjusted in the Z-axis direction while the upper and lower surfaces are individually corrected. Further, at the same time, the lifting operation by the processing side lifting device (processing side lifting Z-axis motor) 14 is adjusted by the Z-axis control signal output from the control signal output unit 19c, so that the upper and lower disk-shaped grooveless grindstone 3 is adjusted. 3 is kept constant relative to the wafer 1, and the rotation of the wafer 1 is adjusted by adjusting the rotation of each of the disk-shaped grooveless grindstones 3 and 3 to the number of rotations during contouring. And the rotation of the disk-shaped grooveless grindstones 3 and 3 are appropriately controlled to accurately grind the edge shape and switch to a precise polishing operation (spark out) after approaching the required shape, and the edge 1a of the wafer 1 The shape is polished to match the target shape to improve the accuracy of the processed shape.

Since the edge 1a of the wafer 1 can be precisely processed at high speed in this way, the processing time can be shortened, the working efficiency is improved, and the wear of the disc-shaped grooveless grindstones 3, 3 is reduced. It is possible to extend the life of the grindstone.
Further, when the rotation directions of the disc-shaped grooved grindstones 3 and 3 are determined so that the processing directions at the contact points of the disk-shaped grooved grindstones 3 and 3 with the wafer 1 are opposite to each other, the peripheral portion of the edge 1a Scratches that tend to occur are suppressed, and after the striations that are engraved in the oblique direction during grinding and polishing are engraved by one grindstone, the diagonal striations in the opposite direction are engraved by the other grindstone. , The processed portion becomes a surface where the streak intersects, the surface roughness of the processed surface is made finer, the surface roughness can be improved, and the cross-sectional slope angle of the thin wafer 1 or the edge 1a Even with a small shape, the required cross-sectional shape can be processed with high accuracy.

  According to the control signal output from the control signal output unit 19c in accordance with an instruction from the control unit 19b, the wafer 1 is processed in the rotation direction of the work placement table rotating device (θ-axis motor) 2b of the wafer processing control device 9b. Whenever a new wafer 1 is processed by switching to the opposite direction each time, the wear of the disc-shaped groove-free grindstones 3 and 3 becomes uniform, the service life becomes longer, and the grindstone that is evenly worn is processed. Therefore, high processing accuracy can be maintained.

  In accordance with a control signal output from the control signal output unit 19c in accordance with an instruction from the control unit 19b, a grindstone lifting device (Z-axis motor) 12, 12 for each precision processing (upper or lower) grindstone of the wafer processing control device 9b. And adjust the vertical position of each disk-shaped grooveless grindstone 3, 3 and adjust the vertical movement by the processing-side lifting device (Z-axis motor for processing-side lifting) 14 so that there are no upper and lower disk-shaped grooves. By keeping the relative position of the grindstones 3 and 3 with respect to the wafer 1 constant, the relative position between the two disc-shaped groove-free grindstones 3 and 3 and the edge 1a of the wafer 1 that has caused a shake or misalignment is always maintained. The positions can be controlled to be the same, chamfering can be accurately performed, and the edge 1a can be formed with high processing accuracy.

  In accordance with an instruction from the control unit 19b, the control signal output from the control signal output unit 19c activates the lateral movement device (X-axis motor) 17f of the wafer processing control device 9b, as shown in FIG. 3 or FIG. The disc-shaped grooved grindstones 3 and 3 are brought into contact with the edges of the orientation flat 1f of the wafer 1, and the wafer 1 is driven by a lateral movement device (X-axis motor) 17f in the state shown in FIG. The orientation flat 1f can be machined into a predetermined shape by linearly reciprocating in the X-axis direction according to the direction of movement of the direction moving bodies 17e, 17e, and the forming and finishing of the edge 1a and orientation by the same machining apparatus. It is possible to perform both forming and finishing of the flat 1f, improving work efficiency of wafer processing and equipment It is possible to increase the operating rate.

[Second Embodiment]
As a second embodiment of the chamfering apparatus, a second chamfering apparatus 20 using the disc-shaped grooveless grindstone shown in FIGS. 21 to 25 will be described.
In addition, the same thing as the chamfering processing apparatus 10 attaches | subjects the same code | symbol, and abbreviate | omits concrete description.

〔Constitution〕
A chamfering apparatus 20 using two disc-shaped grooved grindstones 3 and 3 is a device for chamfering the edge (peripheral edge) 1a of the wafer 1, and includes two disc-shaped grooved grindstones 3 and 3. Are arranged in close proximity to each other and the peripheral surface is used as a machining surface, so that a straight line passing through the center of the wafer 1 and a disc-shaped grooveless grindstone 3, 3 pass through the center of the wafer 1. It is formed so as to coincide with the center of arrangement so that grinding and polishing can be processed equally on the left and right.

  Each of the disk-shaped grooveless grindstones 3, 3 is supported by a grindstone support device 11, 11 provided with a grindstone drive device 11a, 11a, and the grindstone support devices 11, 11 can be raised and lowered independently in the vertical (Z-Z) direction. (With a Z-axis motor) are supported by the grindstone elevating devices 12, 12, and each grindstone elevating device 12, 12 securely fixes the fixed side member to the base 13 so that the reference is not shaken, and the moving side member Is supported so that it can be raised and lowered in the vertical (Z-Z) direction.

  On the work support device 15 side, a pedestal 16 on which is mounted a turntable 2a on which the wafer 1 is placed and a work mount 2 in which the worktable table rotation device 2b that rotates the turntable 2a (with a θ-axis motor) is incorporated. And a pedestal 17 that supports the pedestal 16, and a depth direction in which the pedestal 17 is placed on rails 17a and 17a extended to linearly move in the depth (YY) direction and linearly moves in the depth direction. A movable body 17b, 17b and a depth direction moving device 17c (with a Y-axis motor) as a driving device thereof, and the rails 17a, 17a, the depth direction moving bodies 17b, 17b and the depth direction moving device 17c are placed on the left and right sides ( Left and right direction moving bodies 17e and 17 mounted on rails 17d and 17d extended for linear movement in the (XX) direction and linearly moving in the left and right direction. And a lateral movement device 17f (with an X-axis motor) as a driving device thereof, and the wafer 1 is rotated and moved to a position where the two disc-shaped grooveless grindstones 3 and 3 are provided and chamfered. It can be processed.

  Even when the wafer 1 is displaced due to vertical deformation, vibration, fluttering, or the like during chamfering by the processing apparatus 20, there is no relative displacement with the movement of the disk-shaped grooveless grindstones 3, 3. For processing, the mounting support member 24a of the wafer-side lifting device 24 is suspended below the pedestal 16 from an intermediate position between the rails 17a, 17a and the rails 17d, 17d, and the pedestal 16 is moved vertically by the wafer-side lifting device 24. A moving body 24b for linear movement is provided, and the position of the moving body 24b is moved up and down during processing, so that it is always moved to a position where chamfering does not hinder, and the relative position between the wafer 1 and each of the grindstones 3 and 3 So that finishing can be performed with a constant.

  The control device for controlling the operation of each of these grindstones 3 and 3, each grindstone driving device 11 a and 11 a, each lifting and lowering device 12, 12, 24, each moving device 17 c, 17 f and the like is shown in FIG. As shown in the system diagram, an initial value setting or the like is input from an operation panel 19a provided in the control box 19, and a chamfering operation is controlled based on the setting. The grindstone lifting and lowering devices 12 and 12, the wafer lifting and lowering device 24, and the rotary table 2a each incorporating the respective control units provided on the processing apparatus main body side are rotated from the control unit 19b using the control device via the control signal output unit 19c. A work mounting table 2 including a work mounting table rotating device 2b to be moved, a depth direction moving device 17c and a left and right direction moving device 17f are provided. Against mount 17 and the like, and sends a control signal to the operation instruction.

  The control box 19 includes a liquid crystal monitor, a keyboard, a PBS, and the like. The initial conditions necessary for the operation of each control device are set from the input unit, and instructions for machining operations to be performed in accordance with necessary control procedures are given. The operation panel 19a that enables monitoring of conditions, machining conditions, conditions necessary for chamfering such as initial state and operation status, and the state of each device, and each disk-shaped grooveless grindstone 3, 3 according to designated setting conditions A grindstone driving device 11a, 11a to be rotated and a grindstone lifting device 12, 12, a wafer side lifting device 24, a workpiece mounting base 2 incorporating a workpiece placement table rotating device 2b, a depth direction moving device 17c and a left / right direction moving device 17f are provided. A control unit 19b that determines the control signal to be transmitted by setting the operating conditions of the gantry 17 and the like, and an output from the control unit 19b Receiving a signal and a control signal output section 19c for sending a control signal necessary to perform the instructed operation.

As shown in FIG. 25, each control device starts the robot Z-axis motor, the suction arm R-axis motor or the loader actuator to transfer the wafer 1 from the standby position to the rotary table 2a, and aligns (θ axis, Y Axis) Actuates the motor to clarify the eccentricity, corrects the eccentricity, aligns the axial center, moves the wafer 1 to the processing position along with the rotary table 2a, aligns the notch 1n and the orientation flat 1f. Wafer that determines the initial processing position from the position, rotates at high speed for finishing the outer peripheral edge as required, and after cleaning the surface after processing, transfers the finished wafer 1 to the integrated position of the processed wafer 1 Control device 9a, wafer rotation direction, left-right direction (X-axis direction), depth direction (Y-axis direction), finishing up-down direction (Z Wafer processing control device 9b that collects control devices for individually controlling the operation direction, etc., and a grindstone that is added for rough machining performed before precision machining of the wafer 1 (with a Z axis motor for rough grinding). A wafer roughing control device 9c that collects devices to be controlled (a general grinding wheel rough grinding motor 6a, a rod-shaped grinding wheel rough grinding motor 7a, etc.) disposed in the vertical movement device 8; And a notch precision machining control device 9d in which the control devices of the respective driving devices for precisely machining the notch 1n for determining the upper reference position are provided.
These control devices 9a to 9d are controlled based on the control signal output from the control signal output unit 19c, and the necessary drive devices 11 to 17 are activated so that each operates in harmony with the other drive devices. To be controlled.

[Function and effect]
When chamfering the wafer 1 using the chamfering apparatus 20, first, the wafer setting controller 9a is driven from the control unit 19b via the control signal output unit 19c to individually load the wafers 1 or cassettes. 1 is taken out from the wafers 1,..., 1 stored on the rotary table 2a and moved onto the turntable 2a. (Y-axis motor) 17c is driven to move the rotary table 2a on which the wafer 1 is placed from the wafer preparation position shown in FIGS. 22 and 23 to the wafer processing position shown in FIGS. Diameter processing is performed.

  At the time of peripheral diameter reduction processing, the two grinding wheel lifting devices (Z-axis motors) 12 and 12 are driven by the control signal output from the control signal output unit 19c according to the instruction from the control unit 19b, and the shape of the peripheral end is determined. As shown in FIG. 3 or FIG. 4, the position of each disc-shaped groove-less grindstone 3 or 3 with respect to the wafer 1 is determined and arranged, the workpiece mounting table rotating device (θ-axis motor) 2b of the wafer processing control device 9b and each Both the wheel drive devices (spindle motors for precision grinding) 11a and 11a of the disk-shaped grooveless grindstone 3 are started, and the rotation of each disk-shaped grooveless grindstone 3 and 3 is adjusted to the rotation speed at the time of the peripheral diameter reduction processing. The rotation of the wafer 1 and the rotation of the disc-shaped grooveless grindstones 3 and 3 are appropriately controlled to accurately grind, and after approaching the required diameter, the wafer 1 is switched to a precise polishing operation (spark out). Edge 1a Processing the definitive wafer diameter to match the shape with the target.

Subsequently, contouring is performed.
At the time of the contouring process, as shown in FIGS. 5 and 6, the upper and lower surfaces of the wafer 1 are sandwiched by the disc-shaped grooveless grindstones 3 and 3, respectively, and the disc-shaped grooveless grindstones 3 and 3 positioned above and below are respectively Processing while adjusting the relative position independently. For the relative position adjustment, the precision machining upper grinding wheel lifting / lowering device (precise grinding upper grinding wheel Z-axis motor) 12 is controlled by the precision machining upper grinding wheel Z-axis control signal output from the control signal output unit 19c. At the same time, the hoisting and lowering device of the lower whetstone for precision machining (lower whetstone Z-axis motor for precision grinding) 12 is controlled by the Z-axis control signal of the lower whetstone for precision machining output from the control signal output unit 19c. By adjusting the movement of the wafer 1, positional deviation due to deformation, vibration, fluttering, etc. of the wafer 1 is suppressed by the disc-shaped grooveless grindstones 3, 3 and by adjusting the position of each disk-shaped grooveless grindstone 3, 3 in the Z-axis direction, Contouring is performed while correcting the position of the upper and lower surfaces separately, and at the same time, the wafer-side lifting device (wafer-side lifting Z-axis motor) 24 is controlled by the Z-axis control signal output from the control signal output unit 19c. The vertical movement between the upper and lower disk-shaped grooveless grindstones 3 and 3 and the wafer 1 is kept constant, and each disk-shaped grooveless grindstone 3 and 3 at the time of processing is adjusted. The rotation is adjusted to the number of rotations during the contouring process, and the rotation of the wafer 1 and the rotation of the disk-shaped grooveless grinding stones 3 and 3 are appropriately controlled to accurately grind the edge shape and approach the required shape. Then, it is switched to a precise polishing operation (sparking out), and polishing is performed so that the shape of the edge 1a of the wafer 1 matches the target shape, thereby improving the accuracy of the processed shape.

Since the edge 1a of the wafer 1 can be precisely processed at high speed in this way, the processing time can be shortened, the working efficiency is improved, and the wear of the disc-shaped grooveless grindstones 3, 3 is reduced. It is possible to extend the life of the grindstone.
Further, when the rotation directions of the disc-shaped grooved grindstones 3 and 3 are determined so that the processing directions at the contact points of the disk-shaped grooved grindstones 3 and 3 with the wafer 1 are opposite to each other, the peripheral portion of the edge 1a Scratches that tend to occur are suppressed, and after the striations that are engraved in the oblique direction during grinding and polishing are engraved by one grindstone, the diagonal striations in the opposite direction are engraved by the other grindstone. , The processed portion becomes a surface where the streak intersects, the surface roughness of the processed surface is made finer, the surface roughness can be improved, and the cross-sectional slope angle of the thin wafer 1 or the edge 1a Even with a small shape, the required cross-sectional shape can be processed with high accuracy.

  According to the control signal output from the control signal output unit 19c in accordance with an instruction from the control unit 19b, the wafer 1 is processed in the rotation direction of the work placement table rotating device (θ-axis motor) 2b of the wafer processing control device 9b. Whenever a new wafer 1 is processed by switching to the opposite direction each time, the wear of the disc-shaped groove-free grindstones 3 and 3 becomes uniform, the service life becomes longer, and the grindstone that is evenly worn is processed. Therefore, high processing accuracy can be maintained.

  In accordance with a control signal output from the control signal output unit 19c in accordance with an instruction from the control unit 19b, a grindstone lifting device (Z-axis motor) 12, 12 for each precision processing (upper or lower) grindstone of the wafer processing control device 9b. To adjust the vertical position of each disk-shaped grooveless grindstone 3, 3 and adjust the vertical movement by the wafer-side lifting device (wafer-side lifting Z-axis motor) 24, so that there are no upper and lower disk-shaped grooves. By keeping the relative position of the grindstones 3 and 3 with respect to the wafer 1 constant, the relative position between the two disc-shaped groove-free grindstones 3 and 3 and the edge 1a of the wafer 1 that has caused a shake or misalignment is always maintained. The positions can be controlled to be the same, chamfering can be accurately performed, and the edge 1a can be formed with high processing accuracy.

  In accordance with an instruction from the control unit 19b, the control signal output from the control signal output unit 19c activates the lateral movement device (X-axis motor) 17f of the wafer processing control device 9b, as shown in FIG. 3 or FIG. The disc-shaped grooved grindstones 3 and 3 are brought into contact with the edges of the orientation flat 1f of the wafer 1, and the wafer 1 is driven by a lateral movement device (X-axis motor) 17f in the state shown in FIG. The orientation flat 1f can be machined into a predetermined shape by linearly reciprocating in the X-axis direction according to the direction of movement of the direction moving bodies 17e, 17e, and the forming and finishing of the edge 1a and orientation by the same machining apparatus. It is possible to perform both forming and finishing of the flat 1f, improving work efficiency of wafer processing and equipment It is possible to increase the operating rate.

[Third embodiment]
As a third embodiment of the chamfering apparatus, a third chamfering apparatus 30 using the disk-shaped grooveless grindstone shown in FIGS. 26 to 30 will be described.
In addition, the same thing as the chamfering processing apparatus 20 attaches | subjects the same code | symbol, and abbreviate | omits concrete description.

〔Constitution〕
A chamfering apparatus 30 using two disc-shaped grooved grindstones 3 and 3 is a device for chamfering the edge (peripheral edge) 1a of the wafer 1, and includes two disc-shaped grooved grindstones 3 and 3. Are arranged in close proximity to each other and the peripheral surface is used as a machining surface, so that a straight line passing through the center of the wafer 1 and a disc-shaped grooveless grindstone 3, 3 pass through the center of the wafer 1. It is formed so as to coincide with the center of arrangement so that grinding and polishing can be processed equally on the left and right.

  Each of the disk-shaped grooveless grindstones 3, 3 is supported by a grindstone support device 11, 11 provided with a grindstone drive device 11a, 11a, and the grindstone support devices 11, 11 can be raised and lowered independently in the vertical (Z-Z) direction. (With a Z-axis motor) are supported by the grindstone elevating devices 12, 12, and each grindstone elevating device 12, 12 securely fixes the fixed side member to the base 13 so that the reference is not shaken, and the moving side member Is supported so that it can be raised and lowered in the vertical (Z-Z) direction.

  On the work support device 15 side, a pedestal 16 on which is mounted a turntable 2a on which the wafer 1 is placed and a work mount 2 in which the worktable table rotation device 2b that rotates the turntable 2a (with a θ-axis motor) is incorporated. And a pedestal 17 that supports the pedestal 16, and a depth direction in which the pedestal 17 is placed on rails 17a and 17a extended to linearly move in the depth (YY) direction and linearly moves in the depth direction. A movable body 17b, 17b and a depth direction moving device 17c (with a Y-axis motor) as a driving device thereof, and the rails 17a, 17a, the depth direction moving bodies 17b, 17b and the depth direction moving device 17c are placed on the left and right sides ( Left and right direction moving bodies 17e and 17 mounted on rails 17d and 17d extended for linear movement in the (XX) direction and linearly moving in the left and right direction. And a lateral movement device 17f (with an X-axis motor) as a driving device thereof, and the wafer 1 is rotated and moved to a position where the two disc-shaped grooveless grindstones 3 and 3 are provided and chamfered. It can be processed.

Even when the wafer 1 is displaced by vertical deformation, vibration, fluttering, etc. during the chamfering process by the processing apparatus 30, relative displacement does not occur with the movement of the disk-shaped grooveless grindstones 3, 3. Therefore, a plurality of (wafer-side lifting / lowering Z-axis) piezoelectric elements between the lower end surface of the base 16 and the wafer-side lifting / lowering device support member 33 from an intermediate position between the rails 17a and 17a and the rails 17d and 17d. A wafer-side lifting device 34 that includes actuators 34a,..., 34a and moves up and down together with the base 16 with respect to the wafer-side lifting device support member 33 is interposed.
The wafer-side lifting device 34 moves the wafer 1 together with the pedestal 16 in the vertical direction during processing, so that the wafer 1 is always moved to a position where chamfering is not hindered. So that the correct position can be maintained.

  A control device for controlling the operations of the grindstones 3 and 3, grindstone drive devices 11 a and 11 a, lift devices 12, 12, and 34, moving devices 17 c and 17 f, and the like is shown in FIG. 29. As shown in the drawing, an initial value setting or the like is input from an operation panel 19a provided in the control box 19, and control of a microcomputer or a personal computer is performed so that the chamfering operation is controlled based on the setting. The grindstone lifting / lowering devices 12 and 12, the wafer lifting / lowering device 34, and the rotary table 2a each having a built-in control unit provided on the processing apparatus main body side are rotated from the control unit 19b using the equipment via the control signal output unit 19c. A work mounting base 2 including a work placement table rotating device 2b, a depth direction moving device 17c, and a left / right direction moving device 17f are provided. Relative to the base 17 or the like, and sends a control signal to the operation instruction.

  The control box 19 includes a liquid crystal monitor, a keyboard, a PBS, and the like. The initial conditions necessary for the operation of each control device are set from the input unit, and instructions for machining operations to be performed in accordance with necessary control procedures are given. The operation panel 19a that enables monitoring of conditions, machining conditions, conditions necessary for chamfering such as initial state and operation status, and the state of each device, and each disk-shaped grooveless grindstone 3, 3 according to designated setting conditions A grindstone driving device 11a, 11a to be rotated and a grindstone lifting device 12, 12, a wafer side lifting device 34, a work mounting table 2 incorporating a work placement table rotating device 2b, a depth direction moving device 17c and a left / right direction moving device 17f are provided. A control unit 19b that determines the control signal to be transmitted by setting the operating conditions of the gantry 17 and the like, and an output from the control unit 19b Receiving a signal and a control signal output section 19c for sending a control signal necessary to perform the instructed operation.

As shown in FIG. 30, each control device starts a robot Z-axis motor, a suction arm R-axis motor or a loader actuator to transfer the wafer 1 from the standby position to the turntable 2a, and aligns (θ axis, Y Axis) Actuates the motor to clarify the eccentricity, corrects the eccentricity, aligns the axial center, moves the wafer 1 to the processing position along with the rotary table 2a, aligns the notch 1n and the orientation flat 1f. Wafer that determines the initial processing position from the position, rotates at high speed for finishing the outer peripheral edge as required, and after cleaning the surface after processing, transfers the finished wafer 1 to the integrated position of the processed wafer 1 Control device 9a, wafer rotation direction, left-right direction (X-axis direction), depth direction (Y-axis direction), finishing up-down direction (Z Wafer processing control device 9b that collects control devices for individually controlling the operation direction, etc., and a grindstone that is added for rough machining performed before precision machining of the wafer 1 (with a Z axis motor for rough grinding). A wafer roughing control device 9c in which devices to be controlled (total shape grinding wheel rough grinding motor 6a, rod-like grinding wheel rough grinding motor 7a, etc.) arranged in the vertical movement device 8 are arranged, and the circumference of the wafer 1 And a notch precision machining control device 9d in which the control devices of the respective drive devices for precisely machining the notch 1n for determining the reference position are provided.
These control devices 9a to 9d are controlled based on the control signal output from the control signal output unit 19c, and the necessary drive devices 11 to 17 are activated so that each operates in harmony with the other drive devices. Controlled.

[Function and effect]
When chamfering the wafer 1 using the chamfering device 30, first, the wafer setting controller 9a is driven from the control unit 19b via the control signal output unit 19c to individually load the wafers 1 or cassettes. 1 is taken out from the wafers 1,..., 1 stored on the rotary table 2 a, moved onto the rotary table 2 a, and in accordance with an instruction from the control unit 19 b, the depth direction moving device is controlled by a control signal output from the control signal output unit 19 c. (Y-axis motor) 17c is driven to move the rotary table 2a on which the wafer 1 is placed from the wafer preparation position shown in FIGS. 27 and 28 to the wafer processing position shown in FIGS. 26 and 29. Diameter processing is performed.

  At the time of peripheral diameter reduction processing, the two grinding wheel lifting devices (Z-axis motors) 12 and 12 are driven by the control signal output from the control signal output unit 19c according to the instruction from the control unit 19b, and the shape of the peripheral end is determined. As shown in FIG. 3 or FIG. 4, the position of each disc-shaped groove-less grindstone 3 or 3 with respect to the wafer 1 is determined and arranged, the workpiece mounting table rotating device (θ-axis motor) 2b of the wafer processing control device 9b and each Both the wheel drive devices (spindle motors for precision grinding) 11a and 11a of the disk-shaped grooveless grindstone 3 are started, and the rotation of each disk-shaped grooveless grindstone 3 and 3 is adjusted to the rotation speed at the time of the peripheral diameter reduction processing. The rotation of the wafer 1 and the rotation of the disc-shaped grooveless grindstones 3 and 3 are appropriately controlled to accurately grind, and after approaching the required diameter, the wafer 1 is switched to a precise polishing operation (spark out). Edge 1a Processing the definitive wafer diameter to match the shape with the target.

Subsequently, contouring is performed.
At the time of the contouring process, as shown in FIGS. 5 and 6, the upper and lower surfaces of the wafer 1 are sandwiched by the disc-shaped grooveless grindstones 3 and 3, respectively, and the disc-shaped grooveless grindstones 3 and 3 positioned above and below are respectively Processing while adjusting the relative position independently. For the relative position adjustment, the precision machining upper grinding wheel lifting / lowering device (precise grinding upper grinding wheel Z-axis motor) 12 is controlled by the precision machining upper grinding wheel Z-axis control signal output from the control signal output unit 19c. At the same time, the hoisting and lowering device of the lower whetstone for precision machining (lower whetstone Z-axis motor for precision grinding) 12 is controlled by the Z-axis control signal of the lower whetstone for precision machining output from the control signal output unit 19c. By adjusting the movement of the wafer 1, positional deviation due to deformation, vibration, fluttering, etc. of the wafer 1 is suppressed by the disc-shaped grooveless grindstones 3, 3 and by adjusting the position of each disk-shaped grooveless grindstone 3, 3 in the Z-axis direction, Contouring is performed while correcting the position of the upper and lower surfaces separately, and at the same time, the wafer-side lifting device (for wafer-side lifting) is controlled by the control signal for the wafer-side lifting Z-axis output from the control signal output unit 19c. The vertical movement between the upper and lower disk-shaped grooved grindstones 3 and 3 and the wafer 1 is kept constant by adjusting the vertical movement of the shaft actuator) 34, and each disk-shaped grooveless grindstone during processing Adjusting the rotation of 3 and 3 to the number of rotations during contouring, appropriately controlling the rotation of the wafer 1 and the rotation of the disc-shaped grooveless grinding stones 3 and 3, and grinding the edge shape with high accuracy After approaching the desired shape, switching to a precise polishing operation (sparking out) is performed, and the shape of the edge 1a of the wafer 1 is polished to match the size of the target shape, thereby improving the accuracy of the processed shape.

Since the edge 1a of the wafer 1 can be precisely processed at high speed in this way, the processing time can be shortened, the working efficiency is improved, and the wear of the disc-shaped grooveless grindstones 3, 3 is reduced. It is possible to extend the life of the grindstone.
Further, when the rotation directions of the disc-shaped grooved grindstones 3 and 3 are determined so that the processing directions at the contact points of the disk-shaped grooved grindstones 3 and 3 with the wafer 1 are opposite to each other, the peripheral portion of the edge 1a Scratches that tend to occur are suppressed, and after the striations that are engraved in the oblique direction during grinding and polishing are engraved by one grindstone, the diagonal striations in the opposite direction are engraved by the other grindstone. , The processed portion becomes a surface where the streak intersects, the surface roughness of the processed surface is made finer, the surface roughness can be improved, and the cross-sectional slope angle of the thin wafer 1 or the edge 1a Even with a small shape, the required cross-sectional shape can be processed with high accuracy.

  According to the control signal output from the control signal output unit 19c in accordance with an instruction from the control unit 19b, the wafer 1 is processed in the rotation direction of the work placement table rotating device (θ-axis motor) 2b of the wafer processing control device 9b. Whenever a new wafer 1 is processed by switching to the opposite direction each time, the wear of the disc-shaped groove-free grindstones 3 and 3 becomes uniform, the service life becomes longer, and the grindstone that is evenly worn is processed. Therefore, high processing accuracy can be maintained.

  In accordance with a control signal output from the control signal output unit 19c in accordance with an instruction from the control unit 19b, a grindstone lifting device (Z-axis motor) 12, 12 for each precision processing (upper or lower) grindstone of the wafer processing control device 9b. To adjust the vertical position of each disk-shaped grooveless grindstone 3, 3, and also adjust the vertical movement by the wafer-side lifting device (Z-axis actuator for wafer-side lifting) 34, so that there are no upper and lower disk-shaped grooves By keeping the relative position of the grindstones 3 and 3 with respect to the wafer 1 constant, the relative position between the two disc-shaped groove-free grindstones 3 and 3 and the edge 1a of the wafer 1 that has caused a shake or misalignment is always maintained. It can be quickly controlled so that the positions are the same, chamfering can be accurately performed, and the edge 1a can be formed with high processing accuracy.

  In accordance with an instruction from the control unit 19b, the control signal output from the control signal output unit 19c activates the lateral movement device (X-axis motor) 17f of the wafer processing control device 9b, as shown in FIG. 3 or FIG. The disc-shaped grooved grindstones 3 and 3 are brought into contact with the edges of the orientation flat 1f of the wafer 1, and the wafer 1 is driven by a lateral movement device (X-axis motor) 17f in the state shown in FIG. The orientation flat 1f can be machined into a predetermined shape by linearly reciprocating in the X-axis direction according to the direction of movement of the direction moving bodies 17e, 17e, and the forming and finishing of the edge 1a and orientation by the same machining apparatus. It is possible to perform both forming and finishing of the flat 1f, improving work efficiency of wafer processing and equipment It is possible to increase the operating rate.

[Fourth Embodiment]
As a fourth embodiment of the chamfering apparatus, a first chamfering apparatus 40 using the cup-shaped grooveless grindstone shown in FIGS. 31 to 36 will be described.
In addition, the same thing as the chamfering processing apparatus 10 attaches | subjects the same code | symbol, and abbreviate | omits concrete description.

〔Constitution〕
A chamfering processing apparatus 40 using two cup-shaped grooved grindstones 4 and 4 is a device for chamfering the edge (peripheral end) 1a of the wafer 1, and includes two cup-shaped grooved grindstones 4 and 4. A straight line that passes through the center of the wafer 1 at the intermediate position of the contact point between the cup-shaped grooveless grindstones 4 and 4 and the wafer 1, with the side circumferential surfaces facing each other being arranged close to each other and using the end surface as a processing surface. Is formed so as to pass through a center point between the contact points of both cup-shaped grooveless grindstones 4 and 4 with the wafer 1.
As a result, the two cup-shaped grooveless grindstones 4 and 4 can always be disposed at equal left and right distances from the center line with respect to the wafer 1, and grinding and polishing can be processed equally on the left and right.

Each cup-shaped grooved grindstone 4, 4 is a straight line that is perpendicular to the wafer central axis and further perpendicular to the radial line, or a straight line that is parallel to the wafer rotation surface and does not intersect the wafer central axis. A grindstone driving device 41, 41 having a rotation axis parallel to a straight line perpendicular to a depth (YY) direction plane passing through the axis of the turntable 2a on which the wafer 1 is placed (directly connected to a precision grinding motor). And (with a motor for changing the grinding wheel direction) supported by a grinding wheel support device 43, 43 provided with a cup-shaped grinding wheel direction changing device 42, 42. The grinding wheel support devices 43, 43 are moved up and down in the vertical (Z-Z) direction. Freely supported (with a Z-axis motor for precision grinding) by the grindstone lifting devices 12 and 12.
Furthermore, each grindstone elevating device 12, 12 securely fixes the fixed side member to the base 13 so that the reference is not shaken, and supports the moving side member so that it can be raised and lowered relative to the base 13. , 12 are supported by a processing side lifting device 14 that lifts and lowers the entire base 13 in the vertical (Z-Z) direction (with a Z-axis motor for processing side lifting).

  On the work support device 15 side, a pedestal 16 on which is mounted a turntable 2a on which the wafer 1 is placed and a work mount 2 in which the worktable table rotation device 2b that rotates the turntable 2a (with a θ-axis motor) is incorporated. And a pedestal 17 that supports the pedestal 16, and a depth direction in which the pedestal 17 is placed on rails 17a and 17a extended to linearly move in the depth (YY) direction and linearly moves in the depth direction. A movable body 17b, 17b and a depth direction moving device 17c (with a Y-axis motor) as a driving device thereof, and the rails 17a, 17a, the depth direction moving bodies 17b, 17b and the depth direction moving device 17c are placed on the left and right sides ( Left and right direction moving bodies 17e and 17 mounted on rails 17d and 17d extended for linear movement in the (XX) direction and linearly moving in the left and right direction. And a left-right direction movement device 17f (with an X-axis motor) as a driving device thereof, move to a position where the two cup-shaped grooveless grindstones 4, 4 are provided, rotate the wafer 1, The edge 1a of the wafer 1 can be chamfered.

  In order to perform roughing before finishing with this processing apparatus 40, rough machining (rough grinding Z-axis) provided with a rough grinding wheel 6 and a rod-shaped (or drill-shaped) grinding wheel 7 is possible. A motor (with a motor) vertical movement device 8 is arranged on the front side of the position where the cup-shaped grooveless grinding stones 4 and 4 are provided, and after roughing, it can be moved to a high place where there is no hindrance to the finishing of the wafer 1 When the edge 1a of the wafer 1 is rough-cut, the wafer 1 is moved upward after the roughing and moved to a position where there is no hindrance to the finishing so that the finishing can be performed immediately after the roughing.

  A control device for controlling the operation of each of these grindstones 4, 4, each driving device 2b, 41, each lifting device 12, 12, 14, each moving device 17c, 17f, 42, etc., is shown in FIG. As shown in the control system diagram, a microcomputer, a personal computer or the like is used so that an initial value setting or the like is input from an operation panel 19a provided in the control box 19 and the chamfering operation is controlled based on the setting. The grindstone lifting and lowering devices 12 and 12, the processing side lifting and lowering device 14, and the rotary table 2 a each incorporating the respective control units provided on the processing apparatus main body side from the control unit 19 b using the control device via the control signal output unit 19 c are provided. A work mounting base 2 incorporating a work mounting table rotating device 2b to be rotated, and a base provided with a depth direction moving device 17c and a left and right direction moving device 17f Against 7 etc., and sends a control signal to the operation instruction.

  As shown in the block diagrams of FIGS. 35 and 36, the control box 19 includes a liquid crystal monitor, a keyboard, a PBS (push button switch), etc., and sets initial conditions necessary for the operation of each control device from the input unit. An operation panel 19a that gives instructions for machining operations to be performed in accordance with necessary control procedures, and enables monitoring of conditions necessary for chamfering such as setting conditions, machining conditions, initial state and operation status, and the status of each device. , Each cup-shaped groove-free grindstone 4, 4 is rotated (with a precision grinding motor) according to the specified setting conditions, and the end faces of the cup-shaped groove-free grindstones 4, 4 are always on the wafer 1 side. Directing (with a motor for changing the direction of the grindstone) The cup-shaped grindstone direction changing devices 42 and 42 and the cup-shaped grooveless grindstones 4 and 4 are each independently provided. Grinding stone lifting device 12, 12 to be lowered, each cup-shaped grooveless grinding stone 4, 4, the processing side lifting device 14 for lifting and lowering each grinding stone lifting device 12, 12 as a whole, and a workpiece mounting table rotating device 2b built-in The control unit 19b that determines the control signal to be transmitted by setting the operating conditions of the gantry 17 provided with the mount 2, the depth direction moving device 17c and the left and right direction moving device 17f, and the signal output from the control unit 19b are received. And a control signal output unit 19c for transmitting a control signal necessary for performing the instructed operation.

As shown in FIG. 36, each control device activates a robot Z-axis motor, a suction arm R-axis motor, a loader actuator, or the like to transfer the wafer 1 from the standby position to the turntable 2a, and to align (θ-axis, Y axis) Actuate the motor to determine the eccentricity, align the axial center by correcting the eccentricity, move the wafer 1 to the processing position together with the rotary table 2a, align the notch 1n and the orientation flat 1f. A wafer set control device 9a that determines a position at the initial stage of processing from the position, rotates at high speed for finishing the outer peripheral edge as required, and transfers the finished wafer 1 after processing to the integration position of the processed wafer 1; Individual operation directions such as wafer rotation direction, left-right direction (X-axis direction), depth direction (Y-axis direction), vertical direction for finishing (Z-axis direction), etc. Are arranged in a wafer processing control device 9b, which includes a control device for controlling the wafers, and a grinding wheel vertical movement device 8 (with a Z-axis motor for rough grinding) added for roughing before the precise processing of the wafer 1. The control device 9c for roughing the wafers, and the notch 1n for determining the reference position on the circumference of the wafer 1 are precisely combined with the control devices (the general grinding wheel rough grinding motor 6a, the rod-shaped grinding wheel rough grinding motor 7a, etc.). And a control device 9d for precision machining of notches in which a control device of each driving device for machining is collected.
These control devices 9a to 9d are controlled based on the control signal output from the control signal output unit 19c, and the necessary drive devices 11 to 17 are activated so that each operates in harmony with the other drive devices. To be controlled.

[Function and effect]
When chamfering the wafer 1 using the chamfering device 40, first, the robot Z-axis motor or loader actuator or suction arm in the wafer setting control device 9a is sent from the control unit 19b to the control signal output unit 19c. When the R-axis motor is driven and one wafer 1 is taken out from the individually stacked wafers 1 or wafers 1,..., 1 stored in a cassette, transferred to the turntable 2a, and rough machining is completed. Further, in accordance with an instruction from the control unit 19b, the depth direction moving device (Y-axis motor) 17c is driven by a control signal output from the control signal output unit 19c, and the rotary table 2a on which the wafer 1 is placed is shown in FIG. 33 is moved from the wafer preparation position shown in FIG. 33 to the precision processing position of the wafer 1 shown in FIG. 31 and FIG. It is carried out. When rough machining is required, the rough grinding is moved to a position just below the position where the rough grinding stone 6 or the rod-shaped grinding stone 7 is arranged, and then the precision machining position is entered to start the precision machining.

  At the time of peripheral diameter reduction processing, the two grinding wheel lifting / lowering devices (precise grinding Z-axis motors) 12 and 12 are driven by the control signal output from the control signal output unit 19c in accordance with the instruction from the control unit 19b. 10 to 13, the positions of the cup-shaped grooveless grindstones 4 and 4 with respect to the wafer 1 are determined and arranged, and the workpiece mounting table rotating device (θ-axis motor) of the wafer processing control device 9b is arranged. 2b and both the grindstone driving devices (precision grinding motors) 41 and 41 of the cup-shaped grooveless grindstones 4 and 4 are both started, and the rotation of the cup-shaped grooveless grindstones 4 and 4 is performed at the time of the peripheral diameter reduction processing. Adjust to the number of rotations, and control the rotation of the wafer 1 and the rotation of the cup-shaped groove-free grindstones 4 and 4 accurately to grind accurately and approach the required diameter for precise polishing (spark out) Switch to wafer Processing the wafer diameter in the edge 1a to fit the dimensions of interest.

  Subsequently, contouring is performed. At the time of the contouring process, as shown in FIG. 34, the upper and lower surfaces of the wafer 1 are sandwiched by the cup-shaped grooveless grindstones 4 and 4, respectively, and the cup-shaped grooveless grindstones 4 and 4 positioned above and below are respectively independent. To adjust the relative position. To adjust the relative position, the operation of the grinding wheel lifting device (upper grinding wheel Z-axis motor for precision grinding) 12 is adjusted and controlled by the Z-axis control signal of the upper grinding wheel for precision grinding output from the control signal output unit 19c. The operation of the upper grinding wheel direction changing device (upper grinding wheel direction changing motor) 42 is controlled by the upper grinding wheel direction changing signal output from the signal output unit 19c, and at the same time, the precision grinding lower grinding wheel output from the control signal output unit 19c is controlled. The operation of the grinding wheel lifting device (the lower grinding wheel Z-axis motor for precision grinding) 12 is adjusted by the Z-axis control signal, and the lower grinding wheel direction changing device (the lower grinding wheel is changed by the lower grinding wheel direction changing signal output from the control signal output unit 19c. (Side whetstone direction changing motor) 42 is controlled so that positional deviation due to deformation, vibration, fluttering, etc. of the wafer 1 is suppressed by the cup-shaped grooveless whetstones 4, 4. By adjusting the position of each cup-shaped grooveless grindstone 4, 4 in the Z-axis direction and adjusting the orientation at that position, the contouring process is advanced while correcting the upper and lower surfaces separately, and at the same time, the control signal is output from the control signal output unit 19c. The processing side lifting device (Z-axis motor for processing side lifting / lowering) 14 is adjusted by the control signal of the processing side lifting / lowering Z axis to adjust the vertical movement of the upper and lower cup-shaped grooveless grinding stones 4 and 4 with respect to the wafer 1 in the vertical direction. The relative position is kept constant, and the rotation of each cup-shaped grooveless grindstone 4, 4 at the time of processing is adjusted to the number of rotations at the time of contouring to rotate the wafer 1 and each cup-shaped grooveless grindstone 4. , 4 are appropriately controlled to accurately grind the edge shape, and after approaching the required shape, switch to a precise polishing operation (spark out) to observe the shape of the edge 1a of the wafer 1. Polished to match the dimensions of the shape and to improve the accuracy of the machined shape.

Since the edge 1a of the wafer 1 can be precisely processed at a high speed as described above, the processing time can be shortened, the working efficiency is improved, and the wear of the cup-shaped grooveless grindstones 4 and 4 is reduced. It is possible to extend the life of the grindstone.
Further, when the rotational directions of the cup-shaped grooved grindstones 4, 4 are determined so that the processing directions at the contact points of the cup-shaped grooveless grindstones 4, 4 with the wafer 1 are opposite to each other, the peripheral portion of the edge 1a Scratches that tend to occur are suppressed, and after the striations that are engraved in the oblique direction during grinding and polishing are engraved by one grindstone, the diagonal striations in the opposite direction are engraved by the other grindstone. , The processed portion becomes a surface where the streak intersects, the surface roughness of the processed surface is made finer, the surface roughness can be improved, and the cross-sectional slope angle of the thin wafer 1 or the edge 1a Even with a small shape, the required cross-sectional shape can be processed with high accuracy.

  In accordance with a control signal output from the control signal output unit 19c in accordance with an instruction from the control unit 19b, the rotation direction of the workpiece mounting table rotating device (θ-axis motor) 2b in the wafer processing control device 9b is set to 1 for the wafer 1. When the wafer 1 is processed in a reverse direction every time a sheet is processed, the wear of each cup-shaped groove-free grindstone 4 and 4 becomes uniform, the service life becomes longer, and a uniformly worn grindstone is used. Therefore, high machining accuracy can be maintained.

  In accordance with the control signal output from the control signal output unit 19c according to the instruction from the control unit 19b, the grinding wheel lifting / lowering device (precise grinding Z-axis motor) of each grinding wheel (upper or lower) of the wafer processing control device 9b. 12 and 12 are activated to adjust the vertical position of each cup-shaped groove-free grindstone 4, 4 and to adjust the vertical movement by the processing side lifting device (Z-axis motor for processing side lifting) 14 By keeping the relative position of the grooveless grindstones 4, 4 in the vertical direction with respect to the wafer 1 constant, the edge 1 a of the wafer 1 that is always shaken or misaligned with the two cup-shaped grooveless grindstones 4, 4. The chamfering can be accurately performed and the edge 1a can be formed with high processing accuracy.

  In response to an instruction from the control unit 19b, the control signal output from the control signal output unit 19c activates the lateral movement device (X-axis motor) 17f of the wafer processing control device 9b, and each cup as shown in FIG. A horizontal moving body in which the grooveless grindstones 4 and 4 are brought into contact with the end edge of the wafer 1 serving as the orientation flat 1f and the wafer 1 is moved by a horizontal movement device (X-axis motor) 17f in the state shown in FIG. The orientation flat 1f can be machined into a predetermined shape by linearly reciprocating in the left-right direction (X-axis direction) according to the movement direction of 17e, 17e. Thus, the working efficiency of wafer processing can be improved and the operating rate of the apparatus can be increased.

[Fifth Embodiment]
As a fifth embodiment of the chamfering apparatus, a second chamfering apparatus 50 using the cup-shaped grooveless grindstone shown in FIGS. 37 to 41 will be described.
In addition, the same thing as the chamfering processing apparatus 40 attaches | subjects the same code | symbol, and abbreviate | omits concrete description.

〔Constitution〕
A chamfering processing device 50 using two cup-shaped grooved grindstones 4 and 4 is a device for chamfering the edge (peripheral end) 1a of the wafer 1, and the two cup-shaped grooved grindstones 4 and 4 are used. Are arranged close to each other and the end face is used as a machining surface, and a straight line passing through the center of the wafer 1 and the cup-shaped grooveless grindstones 4 and 4 are arranged at an intermediate position of the contact point with the wafer 1. It is formed so that the upper center coincides with it so that grinding and polishing can be processed equally on the left and right.

  Each cup-shaped grooveless grindstone 4, 4 is connected to a precision grinding motor direct-coupled grindstone driving device 41, 41, and each cup-shaped grooveless grindstone 4, 4 is directed to a grindstone that independently changes the direction of the grindstone. It is supported by the grindstone support devices 43, 43 via the changing devices 42, 42, and the grindstone support devices 43, 43 are supported by the grindstone lifting devices 12, 12 so as to be movable up and down in the vertical (ZZ) direction. Each wheel lifting device 12, 12 securely fixes the fixed side member of the wheel lifting device 12, 12 to the base 13 so that the reference is not shaken, and can move the moving side member up and down (ZZ). To support.

  On the work support device 15 side, a pedestal 16 for installing a rotary table 2a for mounting the wafer 1 and a work mounting table 2 having a work mounting table rotating device 2b for rotating the rotary table 2a, and the pedestal 16 are provided. A support base 17, and depth direction moving bodies 17 b and 17 b that are placed on rails 17 a and 17 a extended to linearly move the base 17 in the depth (YY) direction and linearly move in the depth direction; The depth direction moving device 17c as the driving device and the rails 17a and 17a, the depth direction moving bodies 17b and 17b, and the depth direction moving device 17c are placed and extended to move linearly in the left and right (XX) direction. Left-right direction moving bodies 17e, 17e that are placed on the rails 17d, 17d and linearly move in the left-right direction, and the left-right direction as a driving device thereof And and a dynamic device 17f, the wafer 1 is rotated, it moved to allow chamfering to a position where two disc-shaped grooved grinding wheel 3, 3 are provided.

  Even if the wafer 1 is displaced due to vertical deformation, vibration, fluttering, etc. during the chamfering process by the processing apparatus 50, there is no relative displacement with the movement of the cup-shaped grooveless grindstones 4, 4. For processing, the mounting support member 54a of the wafer-side lifting device 54 is suspended from the intermediate position between the rails 17a, 17a and the rails 17d, 17d below the pedestal 16 (with a Z-axis motor for raising and lowering the wafer side). A moving body 54b is provided for linear movement in the up and down direction together with the pedestal 16 by the elevating device 54. By moving the position of the moving body 54b up and down during processing, the moving body 54b is always moved to a position where chamfering is not hindered. A finishing process is performed in which the relative position to the cup-shaped grooveless grindstones 4 and 4 is kept constant.

  A control device for controlling the operation of each cup-shaped grooveless grindstone 4, 4, grindstone driving device 11a, 11a, each lifting device 12, 12, 54, each moving device 17c, 17f, etc. during processing, As shown in the control system diagram of FIG. 40, a microcomputer is configured so that an initial value setting or the like is input from an operation panel 19a provided in the control box 19, and the chamfering operation is controlled based on the setting. Grinding stone elevators 12 and 12, wafer-side elevators 54, rotations each incorporating a control unit provided on the processing apparatus main body side via a control signal output unit 19c from a control unit 19b using a control device such as a personal computer A work mounting base 2 having a work mounting table rotating device 2b for rotating the table 2a, a depth direction moving device 17c, and a left and right direction moving device. The relative frame 17 or the like provided 17f, sends a control signal to the operation instruction.

  The control box 19 includes a liquid crystal monitor, a keyboard, a PBS, and the like. The initial conditions necessary for the operation of each control device are set from the input unit, and instructions for machining operations to be performed in accordance with necessary control procedures are given. The operation panel 19a that makes it possible to monitor the conditions necessary for chamfering such as conditions, machining conditions, initial state and operation status, and the state of each device, and each cup-shaped groove-free grindstone 4, 4 according to the specified setting conditions Grinding wheel drive devices 41 and 41 to be rotated, grinding wheel direction changing devices 42 and 42, grinding wheel support devices 43 and 43, grinding wheel lifting and lowering devices 12 and 12, a wafer side lifting and lowering device 54, and a work mounting table rotating device 2b. 2. Control signal to be transmitted after setting the operating conditions of the gantry 17 provided with the depth direction moving device 17c and the left and right direction moving device 17f And a control unit 19b defining a and a control signal output section 19c for sending a control signal necessary to perform the operation specified in response to an output signal from the control unit 19b.

As shown in FIG. 41, each control device activates a robot Z-axis motor, a suction arm R-axis motor or a loader actuator to transfer the wafer 1 from the standby position to the turntable 2a, and aligns (θ axis, Y Axis) Actuates the motor to clarify the eccentricity, corrects the eccentricity, aligns the axial center, moves the wafer 1 to the processing position along with the rotary table 2a, aligns the notch 1n and the orientation flat 1f. Wafer that determines the initial processing position from the position, rotates at high speed for finishing the outer peripheral edge as required, and after cleaning the surface after processing, transfers the finished wafer 1 to the integrated position of the processed wafer 1 Set controller 9a, wafer rotation direction, left-right direction (X-axis direction), depth direction (Y-axis direction), finishing vertical direction Wafer processing control device 9b that integrates control devices that individually control the operation direction (Z-axis direction) and the like, and added for rough processing performed before precision processing of wafer 1 (with Z-axis motor for rough grinding) ) A control device 9c for roughing wafers, which is a group of control target devices (total grinding wheel rough grinding motor 6a, rod-like grinding wheel motor 7a, etc.) provided in the grinding wheel vertical movement device 8; And a notch 1n control device 9d that collects the control devices of the drive devices for precisely processing the notch 1n for determining the reference position on the circumference.
These control devices 9a to 9d are controlled based on the control signal output from the control signal output unit 19c, and the necessary drive devices 11 to 17 are activated so that each operates in harmony with the other drive devices. To be controlled.

[Function and effect]
When chamfering the wafer 1 using the chamfering device 50, first, the wafer setting controller 9a is driven from the control unit 19b via the control signal output unit 19c to individually load the wafers 1 or cassettes stacked. 1 is taken out from the wafers 1,..., 1 stored on the rotary table 2a and moved onto the turntable 2a. (Y-axis motor) 17c is driven to move the rotary table 2a on which the wafer 1 is placed from the wafer preparation position shown in FIGS. 38 and 39 to the precision processing position of the wafer 1 shown in FIGS. Reduce the diameter of the end. If rough machining is required, do it before starting precision machining.

  At the time of peripheral end diameter reduction processing, the two grinding wheel lifting devices (precise grinding Z-axis motors) 12 and 12 are driven by the control signal output from the control signal output unit 19c in accordance with an instruction from the control unit 19b, and the peripheral end 12, 13 and 14, the position of each cup-shaped grooveless grindstone 4 or 4 with respect to the wafer 1 is determined and arranged, and the workpiece mounting table rotating device (θ Axis motor) 2b and each grindstone drive device (precision grinding motor) 41, 41 of each cup-shaped grooveless grindstone 4, 4 are started together, and rotation of each cup-shaped grooveless grindstone 4, 4 is reduced to the peripheral end diameter. Adjusting to the number of rotations during processing, appropriately controlling the rotation of the wafer 1 and the rotation of the cup-shaped grooveless grindstones 4 and 4, grinding accurately, approaching the required diameter, precision polishing work (sparking Switch to Out) Processed to fit the dimensions for the purpose of wafer diameter at the edge 1a of Eha 1.

Subsequently, contouring is performed.
At the time of the contouring process, as shown in FIG. 40, the upper and lower surfaces of the wafer 1 are sandwiched by the cup-shaped grooveless grindstones 4 and 4, respectively, and the cup-shaped grooveless grindstones 4 and 4 positioned above and below are respectively independent. To adjust the relative position.
For the relative position adjustment, the operation of the precision grinding upper grinding wheel lifting device (the precision grinding upper grinding wheel Z-axis motor) 12 is controlled by the Z-axis control signal of the precision grinding upper grinding wheel output from the control signal output unit 19c. At the same time, the operation of the precision grinding lower grinding wheel lifting device (the precision grinding lower grinding wheel Z-axis motor) 12 is controlled by the precision machining lower grinding wheel Z-axis control signal output from the control signal output unit 19c. The upper and lower surfaces of the wafer 1 are controlled by adjusting the position in the Z-axis direction of each of the cup-shaped grooveless grindstones 4 and 4 while suppressing the displacement due to deformation, vibration, fluttering, etc. of the wafer 1. Contouring processing is performed while correcting the position separately. At the same time, the wafer side lifting device (wafer side lifting Z-axis mode) is controlled by the wafer side lifting Z-axis control signal output from the control signal output unit 19c. ) 54 is controlled to keep the upper and lower cup-shaped grooved grindstones 4 and 4 and the wafer 1 relative to each other in the vertical direction constant. The rotation of 4 is adjusted to the number of rotations during contouring, and the rotation of the wafer 1 and the rotation of the cup-shaped groove-free grindstones 4 and 4 are appropriately controlled to accurately grind the edge shape and to obtain the required shape. Then, the precision is changed to a precise polishing operation (spark out), and the shape of the edge 1a of the wafer 1 is polished to match the size of the target shape to improve the accuracy of the processed shape.

Since the edge 1a of the wafer 1 can be precisely processed at a high speed as described above, the processing time can be shortened, the working efficiency is improved, and the wear of the cup-shaped grooveless grindstones 4 and 4 is reduced. It is possible to extend the life of the grindstone.
Further, when the rotational directions of the cup-shaped grooved grindstones 4, 4 are determined so that the processing directions at the contact points of the cup-shaped grooveless grindstones 4, 4 with the wafer 1 are opposite to each other, the peripheral portion of the edge 1a Scratches that tend to occur are suppressed, and after the striations that are engraved in the oblique direction during grinding and polishing are engraved by one grindstone, the diagonal striations in the opposite direction are engraved by the other grindstone. , The processed portion becomes a surface where the streak intersects, the surface roughness of the processed surface is made finer, the surface roughness can be improved, and the cross-sectional slope angle of the thin wafer 1 or the edge 1a Even with a small shape, the required cross-sectional shape can be processed with high accuracy.

  According to the control signal output from the control signal output unit 19c in accordance with an instruction from the control unit 19b, the wafer 1 is processed in the rotation direction of the work placement table rotating device (θ-axis motor) 2b of the wafer processing control device 9b. Whenever a new wafer 1 is processed by switching to the opposite direction each time, the wear of each cup-shaped grooveless grindstone 4 and 4 becomes uniform, the service life becomes longer, and the grindstone that is evenly worn is processed. Therefore, high processing accuracy can be maintained.

  In accordance with a control signal output from the control signal output unit 19c in accordance with an instruction from the control unit 19b, a grindstone lifting device (Z-axis motor) 12, 12 for each precision processing (upper or lower) grindstone of the wafer processing control device 9b. To adjust the vertical position of each cup-shaped grooveless grindstone 4, 4 and also adjust the vertical movement by the wafer-side lifting device (Z-axis motor for wafer-side lifting) 54, so that there are no upper and lower cup-shaped grooves By keeping the relative position of the grindstones 4 and 4 relative to the wafer 1 constant, the relative position between the two cup-shaped groove-free grindstones 4 and 4 and the edge 1a of the wafer 1 that has run out or misaligned is always maintained. The positions can be controlled to be the same, chamfering can be accurately performed, and the edge 1a can be formed with high processing accuracy.

  In accordance with an instruction from the control unit 19b, the control signal output from the control signal output unit 19c activates the lateral movement device (X-axis motor) 17f of the wafer processing control device 9b, as shown in FIG. 3 or FIG. 9 and 11, the cup 1 is driven by a lateral movement device (X-axis motor) 17f in a state shown in FIGS. The orientation flat 1f can be machined into a predetermined shape by linearly reciprocating in the X-axis direction according to the movement direction of the left and right moving bodies 17e, 17e, and the edge 1a can be formed and finished by the same machining apparatus. And the orientation flat 1f can be both molded and finished to improve the efficiency of wafer processing. It is possible to increase the operating rate of the apparatus.

[Sixth embodiment]
As a sixth embodiment of the chamfering apparatus, a third chamfering apparatus 60 using the cup-shaped grooveless grindstone shown in FIGS. 42 to 46 will be described.
In addition, the same thing as the chamfering processing apparatus 50 attaches | subjects the same code | symbol, and abbreviate | omits concrete description.

〔Constitution〕
A chamfering device 60 using two cup-shaped grooved grindstones 4 and 4 is a device for chamfering the edge (peripheral edge) 1a of the wafer 1, and the two cup-shaped grooved grindstones 4 and 4 are used. Are arranged close to each other and the end face is used as a machining surface, and a straight line passing through the center of the wafer 1 and the cup-shaped grooveless grindstones 4 and 4 are arranged at an intermediate position of the contact point with the wafer 1. It is formed so that the upper center coincides with it so that grinding and polishing can be processed equally on the left and right.

  Each cup-shaped grooveless grindstone 4, 4 is supported by a grindstone support device 43, 43 having a grindstone direction changing device 42, 42 for connecting a directly connected grindstone driving device 41, 41 and changing the direction of the grindstone. The grindstone support devices 43 and 43 are supported by the grindstone lifting devices 12 and 12 so that they can be lifted and lowered in the vertical (Z-Z) direction, respectively. Further, each of the grindstone lifting devices 12 and 12 is mounted on the base 13. The fixed side members 12 and 12 are securely fixed so that the reference is not shaken, and the movable side member is supported so as to be movable up and down in the vertical (ZZ) direction.

  On the work support device 15 side, a pedestal 16 for installing a rotary table 2a for mounting the wafer 1 and a work mounting table 2 having a work mounting table rotating device 2b for rotating the rotary table 2a, and the pedestal 16 are provided. A support base 17, and depth direction moving bodies 17 b and 17 b that are placed on rails 17 a and 17 a extended to linearly move the base 17 in the depth (YY) direction and linearly move in the depth direction; The depth direction moving device 17c as the driving device and the rails 17a and 17a, the depth direction moving bodies 17b and 17b, and the depth direction moving device 17c are placed and extended to move linearly in the left and right (XX) direction. Left-right direction moving bodies 17e, 17e that are placed on the rails 17d, 17d and linearly move in the left-right direction, and the left-right direction as a driving device thereof And and a dynamic device 17f, the wafer 1 is rotated, moved to allow chamfering to a position where no two cup-shaped groove grindstone 4 and 4 are provided.

Even when the wafer 1 is chamfered by the chamfering process, even if the wafer 1 is displaced due to vertical deformation, vibration, fluttering, or the like, a relative displacement does not occur with the movement of the cup-shaped grooveless grindstones 4 and 4. Therefore, a plurality of (wafers) are provided between the lower end surface of the base 16 and the wafer-side lifting device support member (vertical movement device support member) 63 from the intermediate position between the rails 17a and 17a and the rails 17d and 17d. Side lift Z-axis) A piezoelectric actuator 64a,..., 64a and a wafer side lifting device 64 that moves up and down with the pedestal 16 with respect to the wafer lifting device support member 63 are interposed.
The wafer-side lifting device 64 can move the wafer 1 together with the pedestal 16 in the vertical direction during the processing, and always moves the wafer 1 to a position where the chamfering processing is not hindered. The relative position to 4 can be made constant.

  The control devices for controlling the operations of these cup-shaped grooveless grindstones 4 and 4, grindstone drive devices 11 a and 11 a, lift devices 12, 12 and 34, moving devices 17 c and 17 f, etc. are shown in FIG. As shown in a control system diagram 45, an initial value setting or the like is input from an operation panel 19a provided in the control box 19, and a microcomputer or a chamfering operation is controlled based on the setting. Grinding stone lifting and lowering devices 12 and 12, wafer-side lifting and lowering device 64, and rotary table each incorporating a control unit provided on the processing apparatus main body side via a control signal output unit 19c from a control unit 19b using a control device such as a personal computer. Workpiece mounting table 2 having a workpiece mounting table rotating device 2b for rotating 2a, a depth direction moving device 17c, and a left and right direction moving device The relative frame 17 or the like provided 7f, sends a control signal to the operation instruction.

  The control box 19 includes a liquid crystal monitor, a keyboard, a PBS, and the like. The initial conditions necessary for the operation of each control device are set from the input unit, and instructions for machining operations to be performed in accordance with necessary control procedures are given. The operation panel 19a that makes it possible to monitor the conditions necessary for chamfering such as conditions, machining conditions, initial state and operation status, and the state of each device, and each cup-shaped groove-free grindstone 4, 4 according to the specified setting conditions Grinding wheel driving devices 41 and 41 to be rotated, whetstone lifting and lowering devices 12 and 12, a wafer side lifting and lowering device 64, a workpiece mounting base 2 incorporating a workpiece mounting table rotating device 2 b, a depth direction moving device 17 c and a left and right direction moving device 17 f are provided. The control unit 19b that determines the control signal to be transmitted by setting the operating conditions of the gantry 17 and the like, and the output from the control unit 19b The signal receiving and a control signal output section 19c for sending a control signal necessary to perform the instructed operation.

As shown in FIG. 46, each control device starts a robot Z-axis motor, a suction arm R-axis motor or a loader actuator to transfer the wafer 1 from the standby position to the turntable 2a, and aligns (θ axis, Y Axis) Actuates the motor to clarify the eccentricity, corrects the eccentricity, aligns the axial center, moves the wafer 1 to the processing position along with the rotary table 2a, aligns the notch 1n and the orientation flat 1f. Wafer that determines the initial processing position from the position, rotates at high speed for finishing the outer peripheral edge as required, and after cleaning the surface after processing, transfers the finished wafer 1 to the integrated position of the processed wafer 1 Control device 9a, wafer rotation direction, left-right direction (X-axis direction), depth direction (Y-axis direction), finishing up-down direction (Z Wafer processing control device 9b that collects control devices for individually controlling the operation direction, etc., and a grindstone that is added for rough machining performed before precision machining of the wafer 1 (with a Z axis motor for rough grinding). A wafer roughing control device 9c that collects devices to be controlled (a general grinding wheel rough grinding motor 6a, a rod-shaped grinding wheel rough grinding motor 7a, etc.) disposed in the vertical movement device 8; And a notch precision machining control device 9d in which the control devices of the respective driving devices for precisely machining the notch 1n for determining the upper reference position are provided.
These control devices 9a to 9d are controlled based on the control signal output from the control signal output unit 19c, and the necessary drive devices 11 to 17 are activated so that each operates in harmony with the other drive devices. Controlled.

[Function and effect]
When chamfering the wafer 1 using the chamfering device 60, first, the wafer setting controller 9a is driven from the control unit 19b via the control signal output unit 19c to individually stack the wafers 1 or cassettes. 1 is taken out from the wafers 1,..., 1 stored on the rotary table 2 a, moved onto the rotary table 2 a, and in accordance with an instruction from the control unit 19 b, the depth direction moving device is controlled by a control signal output from the control signal output unit 19 c. (Y-axis motor) 17c is driven to move the rotary table 2a on which the wafer 1 is placed from the wafer preparation position shown in FIGS. 43 and 44 to the wafer processing position shown in FIGS. Diameter processing is performed.

  At the time of peripheral diameter reduction processing, the two grinding wheel lifting / lowering devices (precise grinding Z-axis motors) 12 and 12 are driven by the control signal output from the control signal output unit 19c in accordance with the instruction from the control unit 19b. 10, 12 and 13, the position of each cup-shaped grooveless grindstone 4 or 4 relative to the wafer 1 is determined and arranged, and the workpiece mounting table rotating device (θ-axis) of the wafer processing control device 9b is arranged. Motor) 2b and both grindstone driving devices (precision grinding motors) 41 and 41 of each cup-shaped grooveless grindstone 4 and 4 are started together, and rotation of each cup-shaped grooveless grindstone 4 and 4 is reduced at the peripheral end. Adjust to the rotation speed of the hour and properly control the rotation of the wafer 1 and the rotation of the cup-shaped grooveless grinding stones 4 and 4 to accurately grind and approach the required diameter for precise polishing (sparking out) ) Processing the wafer diameter in the edge 1a of Doha 1 to fit the dimensions of interest.

Subsequently, contouring is performed.
At the time of the contouring process, as shown in FIG. 45, the upper and lower surfaces of the wafer 1 are sandwiched by the cup-shaped grooveless grindstones 4 and 4, respectively, and the cup-shaped grooveless grindstones 4 and 4 positioned above and below are respectively independent. To adjust the relative position. To adjust the relative position, the operation of the grinding wheel lifting device (upper grinding wheel Z-axis motor for precision grinding) 12 of the upper grinding wheel is controlled by the Z-axis control signal of the upper grinding wheel for precision machining output from the control signal output unit 19c. At the same time, the operation of the lower-wheel whetstone lifting device (lower whetstone Z-axis motor for precision machining) 12 is controlled by the Z-axis control signal of the lower whetstone for precision machining output from the control signal output unit 19c. In addition, the upper and lower surfaces of the wafer 1 can be separated from each other by adjusting the position of the cup-shaped grooveless grindstones 4, 4 in the Z-axis direction while suppressing displacement due to deformation, vibration, fluttering, etc. of the wafer 1. Contouring is performed while correcting the position, and at the same time, the wafer side lifting / lowering device 64 (wafer side lifting / lowering Z-axis) pressure is controlled by the wafer-side lifting / lowering Z-axis control signal output from the control signal output unit 19c. The vertical movements of the upper and lower cup-shaped grooveless grindstones 4 and 4 and the wafer 1 are kept constant by controlling the lifting operation by the actuators 64a and 64a, and each cup-shaped grooveless grindstone at the time of processing is maintained. Adjusting the rotation of 4 and 4 to the number of rotations during contouring, appropriately controlling the rotation of the wafer 1 and the rotation of the cup-shaped grooveless grinding stones 4 and 4, and grinding the edge shape with high accuracy After approaching the desired shape, switching to a precise polishing operation (sparking out) is performed, and the shape of the edge 1a of the wafer 1 is polished to match the size of the target shape, thereby improving the accuracy of the processed shape.

Since the edge 1a of the wafer 1 can be precisely processed at high speed in this way, the processing time can be shortened, the working efficiency is improved, and the wear of the disc-shaped grooveless grindstones 3, 3 is reduced. It is possible to extend the life of the grindstone.
Further, when the rotational directions of the cup-shaped grooved grindstones 4, 4 are determined so that the processing directions at the contact points of the cup-shaped grooveless grindstones 4, 4 with the wafer 1 are opposite to each other, the peripheral portion of the edge 1a Scratches that tend to occur are suppressed, and after the striations that are engraved in the oblique direction during grinding and polishing are engraved by one grindstone, the diagonal striations in the opposite direction are engraved by the other grindstone. , The processed portion becomes a surface where the streak intersects, the surface roughness of the processed surface is made finer, the surface roughness can be improved, and the cross-sectional slope angle of the thin wafer 1 or the edge 1a Even with a small shape, the required cross-sectional shape can be processed with high accuracy.

  According to the control signal output from the control signal output unit 19c in accordance with an instruction from the control unit 19b, the wafer 1 is processed in the rotation direction of the work placement table rotating device (θ-axis motor) 2b of the wafer processing control device 9b. Whenever a new wafer 1 is processed by switching to the opposite direction each time, the wear of each cup-shaped grooveless grindstone 4 and 4 becomes uniform, the service life becomes longer, and the grindstone that is evenly worn is processed. Therefore, high processing accuracy can be maintained.

  In accordance with a control signal output from the control signal output unit 19c in accordance with an instruction from the control unit 19b, a grindstone lifting device (Z-axis motor) 12, 12 for each precision processing (upper or lower) grindstone of the wafer processing control device 9b. To adjust the vertical position of each cup-shaped grooveless grindstone 4, 4, and control the lifting / lowering operation of the wafer-side lifting / lowering device 64 by the (wafer-side lifting / lowering Z-axis) piezoelectric actuators 64 a,. By keeping the relative position of the upper and lower cup-shaped grooveless grindstones 4 and 4 with respect to the wafer 1 in the vertical direction constant, the wafers that have always run out or misaligned with the two cup-shaped grooveless grindstones 4 and 4. The relative position with respect to one edge 1a can be controlled at a high speed and kept constant, chamfering can be accurately performed, and the edge 1a can be formed with high processing accuracy.

  In response to an instruction from the control unit 19b, the control signal output from the control signal output unit 19c activates the lateral movement device (X-axis motor) 17f of the wafer processing control device 9b, as shown in FIG. 9 or FIG. 9. Each cup-shaped grooved grindstone 4 or 4 is brought into contact with the edge of the wafer 1 which becomes the orientation flat 1f, and in the state shown in FIG. 9, the wafer 1 is driven by a lateral movement device (X-axis motor) 17f. The orientation flat 1f can be machined into a predetermined shape by linearly reciprocating in the X-axis direction according to the direction of movement of the direction moving bodies 17e, 17e, and the forming and finishing of the edge 1a and orientation by the same machining apparatus. Both flat 1f forming and finishing can be performed, improving the work efficiency of wafer processing. It is possible to increase the operating rate of the location.

  By increasing the cross-sectional shape and its dimensional accuracy in chamfering of the wafer, accurately forming the required cross-sectional shape, shortening the processing time and extending the life of the grindstone, Chamfering can be finished with higher accuracy in a shorter time than the prior art, improving product quality and increasing yield, extending the life of the grindstone, and greatly reducing manufacturing costs. It is possible to provide an industrially significant method and apparatus.

It is a perspective explanatory view showing the processing state of the wafer peripheral edge in the 1st embodiment concerning the processing method of the present invention. It is perspective explanatory drawing which shows the processing state of the orientation flat part of the wafer in 1st embodiment same as the above. It is expansion partial sectional explanatory drawing which shows the contact state of the wafer peripheral end and disk shaped groove | channel non-grinding stone in 1st embodiment same as the above. FIG. 4 is an enlarged partial cross-sectional explanatory view showing a contact state between a wafer peripheral edge having a shape different from that in FIG. 3 and a disc-shaped groove-less grindstone in the first embodiment. It is expansion partial sectional explanatory drawing which shows the contact state of the disk-shaped groove-less grindstone at the time of the contouring process in 1st embodiment same as the above. FIG. 3 is an enlarged partial cross-sectional explanatory view showing a state of a disk-shaped grooveless grindstone whose position is changed in accordance with the wafer position shift during the contouring process in the first embodiment. It is processing explanatory drawing which shows the diagonal striation which the disk shaped grindstone without a disk in a 1st embodiment same as the above forms. It is a perspective view which shows the processing state of the wafer peripheral edge in the 2nd embodiment which concerns on the processing method of this invention. It is a perspective view which shows the processing state of the orientation flat part of the wafer in 2nd embodiment same as the above. It is a partial plan explanatory view showing the contact state of the wafer peripheral edge and the cup-shaped grooveless grindstone in the second embodiment. It is plane explanatory drawing which shows the contact state of the orientation flat part of a wafer in a 2nd embodiment same as the above, and a cup shape grindstone. It is a partial plane explanatory view which shows the contact state of the cup-shaped grooveless grindstone which contacts the wafer peripheral edge in 2nd embodiment same as the above. It is a partial front explanatory drawing which shows the contact state of the cup-shaped groove-less grindstone which contacts the wafer peripheral edge in 2nd embodiment same as the above. It is processing explanatory drawing which shows the diagonal streak which the cup-shaped groove-less grindstone in a 2nd embodiment same as the above forms. It is a front view which shows the processing apparatus using the disk-shaped groove-less grindstone in the 1st embodiment which concerns on the processing apparatus of this invention. It is a side view which shows the processing apparatus using the disk shape grindstone without a grindstone in a 1st embodiment same as the above. It is a top view which shows the processing apparatus using the disk shape grindless grindstone in 1st embodiment same as the above. It is a control system diagram of the processing apparatus using the disk-shaped grooveless grindstone in the 1st embodiment same as the above. It is a control system block diagram of the processing apparatus using the disk-shaped grooveless grindstone in the 1st embodiment same as the above. FIG. 20 is an enlarged partial block diagram illustrating a right side portion including a control signal output unit of the control system block diagram of FIG. 19 and a control device on the processing apparatus main body side. It is a front view which shows the processing apparatus using the disk-shaped grooveless grindstone in the 2nd embodiment which concerns on the processing apparatus of this invention. It is a side view which shows the processing apparatus using the disk shape grindless grindstone in 2nd embodiment same as the above. It is a top view which shows the processing apparatus using the disk-shaped grooveless grindstone in 2nd embodiment same as the above. It is a control system diagram of the processing apparatus using the disk-shaped grooveless grindstone in the second embodiment. It is an enlarged partial block diagram which shows the right side part in the control system block diagram of the processing apparatus using the disk shape grindstone without a stone in the 2nd embodiment same as the above. It is a front view which shows the processing apparatus using the disk shape grindless grindstone in the 3rd embodiment which concerns on the processing apparatus of this invention. It is a side view which shows the processing apparatus using the disk shape grindstone without a grindstone in a 3rd embodiment same as the above. It is a top view which shows the processing apparatus using the disk shape grindstone without a grindstone in a 3rd embodiment same as the above. It is a control system diagram of the processing apparatus using the disk-shaped grooveless grindstone in a 3rd embodiment same as the above. It is an expanded partial block diagram which shows the right side part in the control system block diagram of the processing apparatus using the disk shape grindstone without a stone in a 3rd embodiment same as the above. It is a front view which shows the processing apparatus using the cup-shaped grooveless grindstone in the 4th embodiment which concerns on the processing apparatus of this invention. It is a side view which shows the processing apparatus using the cup-shaped grooveless grindstone in a 4th embodiment same as the above. It is a top view which shows the processing apparatus using the cup-shaped grooveless grindstone in a 4th embodiment same as the above. It is a control system diagram of the processing apparatus using the cup-shaped grooveless grindstone in a 4th embodiment same as the above. It is a control-system block diagram of the processing apparatus using the cup-shaped groove-less grindstone in a 4th embodiment same as the above. FIG. 36 is an enlarged partial block diagram showing a right side portion including a control signal output unit of the control system block diagram of FIG. 35 and a control device on the processing apparatus main body side. It is a front view which shows the processing apparatus using the cup-shaped grooveless grindstone in the 5th embodiment which concerns on the processing apparatus of this invention. It is a side view which shows the processing apparatus using the cup-shaped grooveless grindstone in a 5th embodiment same as the above. It is a top view which shows the processing apparatus using the cup-shaped grooveless grindstone in a 5th embodiment same as the above. It is a control system diagram of the processing apparatus using the cup-shaped grooveless grindstone in a 5th embodiment same as the above. It is an expanded partial block diagram which shows the right side part in the control-system block diagram of the processing apparatus using the cup-shaped groove-less grindstone in 5th embodiment same as the above. It is a front view which shows the processing apparatus using the cup-shaped grooveless grindstone in the 6th embodiment which concerns on the processing apparatus of this invention. It is a side view which shows the processing apparatus using the cup-shaped grooveless grindstone in a 6th embodiment same as the above. It is a top view which shows the processing apparatus using the cup-shaped grooveless grindstone in a 6th embodiment same as the above. It is a control-system figure of the processing apparatus using the cup shape grindstone without a grindstone in a 6th embodiment same as the above. It is an expanded partial block diagram which shows the right side part in the control-system block diagram of the processing apparatus using the cup shape grindstone in a 6th embodiment same as the above. It is plane explanatory drawing which shows the wafer with a notch conventionally used. It is plane explanatory drawing which shows the wafer with an orientation flat used conventionally. It is a fragmentary sectional view which shows the wafer edge part which has an edge shape where a front-end | tip is formed with a single circular arc. It is a fragmentary sectional view which shows the wafer edge part which has the edge shape formed in the vertical peripheral surface which a front-end | tip has two circular arcs in a corner | angular part. FIG. 7 is a partial cross-sectional view showing a wafer end portion having an edge shape in which the front end portion has an asymmetrical shape and the front end is formed by a single arc, (A) is a partial cross-sectional view showing a shape during preliminary processing; ) Is a partial cross-sectional view showing a final shape that is asymmetrical in the vertical direction.

Explanation of symbols

1 Wafer 1a Edge (peripheral edge)
1au Upper slope 1ad Lower slope 1b Peripheral edge 1c Arc 1d Diagonal stripe 1e Diagonal stripe 1e Orientation flat 1fc Orientation flat corner 1n Notch 1nb Notch bottom 1nc Notch corner 2 Work mount 2a Rotary table 2b (θ-axis motor 3) Disc-shaped groove-free whetstone 4 Cup-shaped groove-free whetstone 4a End surface 4b Rotating shaft (for cup-shaped groove-free whetstone) 6 (Rough grinding) Total whetstone 6a Total-shaped whetstone rough grinding motor 7 (For rough grinding) Rod-shaped grinding wheel (or drill-type grinding wheel)
7a Rod grinding wheel rough grinding motor 8 (with rough grinding Z-axis motor) grinding wheel vertical movement device 9a Wafer setting control device 9b Wafer processing control device 9c Wafer roughing control device 9d Notch precision processing control device 10, 20, 30, 40, 50, 60 Chamfering device 11 Grinding wheel support device 11a (with spindle motor for precision grinding) Grinding wheel drive device 12 (with Z axis motor for precision grinding) Grinding stone lifting device 13 Base 14 (For machining side lifting) Processing side lifting device 15 Work support device 16 Base 17 Mounting base 17a, 17d Rail 17b Depth (YY) direction moving body 17c (With Y axis motor) Depth direction moving device 17e Left and right (XX) direction Moving body 17f (with X-axis motor) Left-right direction moving device 19 Control box 19a Operation panel 19b Control unit 1 9c Control signal output units 24 and 54 (with a Z-axis motor for raising and lowering the wafer side) Wafer side raising and lowering devices 24a and 54a Mounting support members 24b and 54b Moving bodies 33 and 63 Wafer side raising and lowering device support members 34 and 64 Wafer side raising and lowering device 34a 64a (Z-axis for raising and lowering the wafer side) Piezoelectric actuator 41 Grinding wheel drive device 42 (with direct grinding motor direct connection type) 42 (with motor for changing the grinding wheel direction) Cup type grinding wheel direction changing device 43 Grinding wheel support device B Cut off by orientation flat Radial length excluding arc portion D Diameter R, R1, R2, R3 Radius X1, X2, X3, X4 Width X, Y, Z, θ (indicating moving direction) arrow α1, α2, α3, α4 α5, α6 Angle dn Notch depth h Orientation flat (disappeared part) depth

Claims (20)

The wafer is centered and placed on a turntable, rotated, and two grooveless grindstones that process this rotating wafer are placed close to the same location on the peripheral edge of the wafer, and are placed in a relative heel. , A processing method for simultaneously processing and forming a position adjacent to the same location of the peripheral edge of the wafer by the processing surface of the rotating both grooveless grindstone,
In peripheral edge diameter reduction processing to grind the outer diameter of the wafer and reduce the diameter, the two grooveless grindstones are held in contact with the wafer while being held at a constant height.
In the contouring process for forming a cross section of the peripheral edge of the wafer into a desired shape, the two grooveless grindstones are individually moved to each surface of the peripheral edge of the wafer, and the radial direction of the peripheral edge of the wafer is moved. A method for chamfering a wafer, characterized in that the same portion is sandwiched from above and below and each surface is processed simultaneously. The orientation flat portion of the wafer is placed on a table formed so as to be reciprocally moved relative to the grindstone so as to be movable on the plane, and the orientation flat portion is processed by reciprocating relatively 2 A single grooveless grindstone is placed close to the same location on the peripheral edge of the orientation flat, and is relatively staggered, and close to the same location on the peripheral edge of the orientation flat by the processing surface of both rotating grooveless grindstones. A processing method for simultaneously processing and molding the selected positions,
In peripheral edge reduction processing, in which the end face of the orientation flat part is ground and processed in the direction of reducing the dimensions, the two grooveless grindstones are kept in contact with the end face of the orientation flat part while maintaining a constant height. Let me process
In the contouring process in which the cross section of the orientation flat part peripheral end is formed into a desired shape, the same part in the radial direction of the orientation flat part peripheral end is sandwiched from above and below, and each surface is processed simultaneously. Wafer chamfering method.   3. The wafer chamfering method according to claim 1, wherein the two grooveless grindstones have opposite processing directions at a contact point with the wafer. 4. The wafer is centered and placed on a turntable, rotated, and two grooveless grindstones for processing this rotating wafer are placed close to the same location on the peripheral edge of the wafer, and are set to be relatively inclined. Rotating the rotation direction of each grooveless whetstone in the opposite direction at the contact point with the wafer, and simultaneously processing the position close to the same location on the peripheral edge of the wafer by the processing surface of both grooveless whetstone A method,
In peripheral edge diameter reduction processing to grind the wafer outer shape in the direction of diameter reduction, the two grooveless grindstones are held in contact with the wafer while being held at a constant height, and processed.
In the contouring process in which the cross section of the wafer peripheral edge is formed into a desired shape, the upper surface of the wafer peripheral edge is moved simultaneously with the two groove-free grindstones, and the lower surface of the wafer peripheral edge is A method for chamfering a wafer, characterized in that it is divided into processing for moving two grooveless grindstones simultaneously and each surface is processed separately. The orientation flat portion of the wafer is placed on a table formed so as to be reciprocally moved relative to the grindstone so as to be movable on the plane, and the orientation flat portion is processed by reciprocating relatively 2 The grooveless grindstones are placed close to the same location on the peripheral edge of the orientation flat part, and are disposed in a relative manner, and the rotational directions of both grooveless grindstones are rotated in opposite directions at the point of contact with the wafer, A processing method for simultaneously processing and molding a position adjacent to the same portion of the peripheral portion of the orientation flat portion by a processing surface of both grooveless grindstones,
In peripheral edge reduction processing, in which the end face of the orientation flat part is ground and processed in the direction of reducing the dimensions, the two grooveless grindstones are kept in contact with the end face of the orientation flat part while maintaining a constant height. Let me process
In the contouring process in which the cross section of the orientation flat part peripheral end is formed into a desired shape, the process of moving the two grooveless grindstones simultaneously on the upper surface of the orientation flat part peripheral end, and the orientation flat part periphery A wafer chamfering method, wherein the lower surface of the end portion is divided into processing for simultaneously moving the two groove-free grindstones, and each surface is processed separately.   5. The chamfering process is performed by changing the rotation direction of the wafer to the opposite direction when performing the next chamfering process every time the wafer is chamfered. Wafer chamfering method.   Processing is performed so that the groove-free grinding wheel and the position of the wafer in the plate thickness direction operate synchronously with respect to the position fluctuation in the plate thickness direction accompanying the rotation of the wafer during the contouring process. 5. The wafer chamfering method according to claim 1, wherein the wafer is chamfered.   For the synchronous control of the wafer and the grooveless grindstone with respect to the positional deviation in the plate thickness direction accompanying the rotation of the wafer during the contouring process, and for producing the cross-sectional shape of the peripheral edge of the wafer during the contouring process 8. The wafer chamfering method according to claim 7, wherein the thickness direction control is performed separately for each of the wafer side and the grooveless grindstone side.   Synchronous control of the wafer and the grooveless grindstone with respect to positional fluctuation in the plate thickness direction accompanying rotation of the wafer, and thickness direction control for producing a cross-sectional shape of the peripheral edge of the wafer are the plate thickness of the wafer. Each wheel moves individually in the plate thickness direction of the wafer so as to be relatively movable in the plate thickness direction of the wafer relative to the wheel side Z-axis direction movement control moving in the direction. 8. The wafer chamfering method according to claim 7, wherein the wafer chamfering method is performed by multiple control based on grinding wheel movement control.   Synchronous control of the wafer and the grooveless grindstone with respect to positional fluctuation in the plate thickness direction accompanying rotation of the wafer, and thickness direction control for producing a cross-sectional shape of the peripheral edge of the wafer are the plate thickness of the wafer. The wafer side Z-axis direction movement control moving in the direction, and each grindstone individually moving in the wafer thickness direction so as to be relatively movable in the wafer thickness direction relative to the wafer side Z-axis direction movement control 9. The wafer chamfering method according to claim 8, wherein the wafer chamfering method is performed by multiple control based on grinding wheel movement control.   The wafer chamfering method according to claim 10, wherein the wafer side Z-axis direction moving device moves the wafer in a plate thickness direction according to rotation of a screw.   11. The wafer chamfering method according to claim 10, wherein the wafer side Z-axis direction moving device moves the wafer in the plate thickness direction by utilizing expansion / contraction of a piezoelectric element. A wafer chamfering apparatus comprising a wafer placed concentrically on a rotary table, and two grooveless grindstones that chamfer and move simultaneously close to and away from the peripheral edge of the wafer,
Two whetstone moving devices that are arranged close to each other and movably mounted in the wafer plate thickness direction (Z-axis direction), and wherein the two grooveless whetstones are arranged close to each other,
A workpiece mounting table rotating device that is arranged below the rotating table and is operable in a rotating direction (θ direction) during chamfering;
A plane moving device that mounts the workpiece mounting table rotating device and enables parallel movement of the wafer placed concentrically on the rotating table in the depth direction (Y-axis direction);
A wafer plate disposed between the grinding wheel side Z-axis direction moving device, in which the two grinding wheel moving devices are moved together in the wafer plate thickness direction, and the workpiece mounting table rotating device and the planar moving device. A wafer-side Z-axis direction moving device attached movably in the thickness direction, and any one Z-axis direction moving device;
With
A three-dimensional direction including the wafer thickness direction of the wafer and each grooveless grindstone during processing while simultaneously processing a position close to the same portion of the peripheral edge of the wafer by the processing surface of each rotated grooveless grindstone A wafer chamfering apparatus characterized by chamfering the cross-sectional shape of the peripheral edge of the wafer into a predetermined shape by moving the wafer relative to each other.   The planar moving device can be moved in parallel in the left-right direction and the depth direction (Y-axis direction), which can move the wafer placed concentrically on the rotary table in the left-right direction (X-axis direction). 14. The wafer chamfering apparatus according to claim 13, wherein the wafer chamfering apparatus is a planar movement apparatus capable of parallel translation in combination with a depth direction movement apparatus. In the two grindstone moving devices, the rotation axes of the two disk-shaped grooveless grindstones are arranged in parallel to the orthogonal axis of the rotation axis of the rotary table, and the two disk-shaped grooveless grindstones are disposed facing each other. Two grindstone moving devices that are mounted so as to be able to move independently in the wafer plate thickness direction,
15. The Z-axis direction moving device is a grindstone side Z-axis direction moving device in which the two grindstone moving devices are movably attached together in the wafer plate thickness direction. Wafer chamfering equipment. In the two grindstone moving devices, the rotation axes of the two disk-shaped grooveless grindstones are arranged in parallel to the orthogonal axis of the rotation axis of the rotary table, and the two disk-shaped grooveless grindstones are disposed facing each other. Two grindstone moving devices that are mounted so as to be able to move independently in the wafer plate thickness direction,
The Z-axis direction moving device is a wafer-side Z-axis direction moving device that is disposed between the workpiece mounting table rotating device and the planar moving device so as to be movable in the wafer plate thickness direction. The wafer chamfering apparatus according to claim 13 or 14. In the two grindstone moving devices, the rotation axes of the two cup-shaped grooveless grindstones are arranged in parallel to the axis directed in the direction intersecting the rotation axis of the rotary table, and the two cup-shaped grooveless grindstones are arranged at the wafer peripheral edge. Two grindstone moving devices that are arranged in the vicinity of the same part of the part and attached so as to be independently movable in the wafer plate thickness direction,
The Z-axis direction moving device is a grindstone side Z-axis direction moving device in which two whetstone moving devices are attached so as to be movable together in the wafer plate thickness direction. Wafer chamfering equipment. In the two grindstone moving devices, the rotation axes of the two cup-shaped grooveless grindstones are arranged in parallel to the axis directed in the direction intersecting the rotation axis of the rotary table, and the two cup-shaped grooveless grindstones are arranged at the wafer peripheral edge. Two grindstone moving devices that are arranged in the vicinity of the same part of the part and attached so as to be independently movable in the wafer plate thickness direction,
The Z-axis direction moving device is a wafer-side Z-axis direction moving device that is disposed between the workpiece mounting table rotating device and the planar moving device so as to be movable in the wafer plate thickness direction. The wafer chamfering apparatus according to claim 13 or 14.   The wafer side Z-axis direction moving device is characterized in that a motor-driven screw type linear moving device for moving the wafer in the plate thickness direction is disposed between the workpiece mounting table rotating device and the planar moving device. The wafer chamfering apparatus according to claim 15 or 17.   The wafer side Z-axis direction moving device is characterized in that a large number of piezoelectric actuators for moving the wafer in the plate thickness direction are disposed between the workpiece mounting table rotating device and the planar moving device. The wafer chamfering apparatus according to claim 15 or claim 17.

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