CN1103511A - 精磨半导体晶片的边沿的方法 - Google Patents
精磨半导体晶片的边沿的方法 Download PDFInfo
- Publication number
- CN1103511A CN1103511A CN94107806A CN94107806A CN1103511A CN 1103511 A CN1103511 A CN 1103511A CN 94107806 A CN94107806 A CN 94107806A CN 94107806 A CN94107806 A CN 94107806A CN 1103511 A CN1103511 A CN 1103511A
- Authority
- CN
- China
- Prior art keywords
- edge
- semiconductor wafer
- working surface
- cloth
- polishing tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 25
- 235000012431 wafers Nutrition 0.000 title abstract description 58
- 238000009499 grossing Methods 0.000 title abstract description 4
- 238000005498 polishing Methods 0.000 claims abstract description 25
- 239000004744 fabric Substances 0.000 claims abstract description 24
- 239000010432 diamond Substances 0.000 claims description 14
- 229910003460 diamond Inorganic materials 0.000 claims description 13
- 208000001840 Dandruff Diseases 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 10
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 claims description 8
- 229910001573 adamantine Inorganic materials 0.000 claims description 8
- 230000005484 gravity Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006424 Flood reaction Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004537 pulping Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP4325518.3 | 1993-07-29 | ||
| DE4325518A DE4325518A1 (de) | 1993-07-29 | 1993-07-29 | Verfahren zur Glättung der Kante von Halbleiterscheiben |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1103511A true CN1103511A (zh) | 1995-06-07 |
Family
ID=6494026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN94107806A Pending CN1103511A (zh) | 1993-07-29 | 1994-06-30 | 精磨半导体晶片的边沿的方法 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPH0760624A (enrdf_load_stackoverflow) |
| KR (1) | KR950004435A (enrdf_load_stackoverflow) |
| CN (1) | CN1103511A (enrdf_load_stackoverflow) |
| DE (1) | DE4325518A1 (enrdf_load_stackoverflow) |
| IT (1) | IT1272345B (enrdf_load_stackoverflow) |
| MY (1) | MY130149A (enrdf_load_stackoverflow) |
| TW (1) | TW260812B (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102642253A (zh) * | 2012-05-04 | 2012-08-22 | 上海华力微电子有限公司 | 一种硅片切边方法及其装置 |
| CN104284755A (zh) * | 2012-05-07 | 2015-01-14 | 信越半导体股份有限公司 | 圆板形工件用外周研磨装置 |
| CN113182971A (zh) * | 2021-05-12 | 2021-07-30 | 四川雅吉芯电子科技有限公司 | 一种单晶硅外延片高精度磨边装置 |
| CN115551676A (zh) * | 2020-06-08 | 2022-12-30 | 胜高股份有限公司 | 晶片外周部的研磨装置 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11245151A (ja) * | 1998-02-27 | 1999-09-14 | Speedfam Co Ltd | ワークの外周研磨装置 |
| JP3197253B2 (ja) * | 1998-04-13 | 2001-08-13 | 株式会社日平トヤマ | ウエーハの面取り方法 |
| JP2000158315A (ja) * | 1998-11-27 | 2000-06-13 | Speedfam-Ipec Co Ltd | 端面研磨装置におけるノッチ研磨装置のノッチ研磨方法 |
| EP1043120A1 (en) * | 1999-03-31 | 2000-10-11 | Nippei Toyama Corporation | Method and apparatus for grinding a workpiece |
| JP3510584B2 (ja) * | 2000-11-07 | 2004-03-29 | スピードファム株式会社 | 円板形ワークの外周研磨装置 |
| JP2002329687A (ja) * | 2001-05-02 | 2002-11-15 | Speedfam Co Ltd | デバイスウエハの外周研磨装置及び研磨方法 |
| JP3949941B2 (ja) * | 2001-11-26 | 2007-07-25 | 株式会社東芝 | 半導体装置の製造方法および研磨装置 |
| JP5112703B2 (ja) * | 2007-01-18 | 2013-01-09 | ダイトエレクトロン株式会社 | ウェーハ面取り加工方法およびその装置 |
| DE102009030294B4 (de) * | 2009-06-24 | 2013-04-25 | Siltronic Ag | Verfahren zur Politur der Kante einer Halbleiterscheibe |
| JP2011194561A (ja) * | 2010-02-26 | 2011-10-06 | Nakamura Tome Precision Ind Co Ltd | 円盤状ワークの面取装置 |
| DE102013210057A1 (de) | 2013-05-29 | 2014-12-04 | Siltronic Ag | Verfahren zur Politur der Kante einer Halbleiterscheibe |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57184662A (en) * | 1981-05-09 | 1982-11-13 | Hitachi Ltd | Chamfering method and device of wafer |
| JPS5958827A (ja) * | 1982-09-28 | 1984-04-04 | Toshiba Corp | 半導体ウエ−ハ、半導体ウエ−ハの製造方法及び半導体ウエ−ハの製造装置 |
| JP2719855B2 (ja) * | 1991-05-24 | 1998-02-25 | 信越半導体株式会社 | ウエーハ外周の鏡面面取り装置 |
| US5128281A (en) * | 1991-06-05 | 1992-07-07 | Texas Instruments Incorporated | Method for polishing semiconductor wafer edges |
| DE4120003A1 (de) * | 1991-06-18 | 1992-12-24 | Mueller Georg Nuernberg | Vorrichtung und verfahren zum kantenverrunden von halbleiterronden |
| US5185965A (en) * | 1991-07-12 | 1993-02-16 | Daito Shoji Co., Ltd. | Method and apparatus for grinding notches of semiconductor wafer |
-
1993
- 1993-07-29 DE DE4325518A patent/DE4325518A1/de not_active Withdrawn
-
1994
- 1994-06-16 MY MYPI94001563A patent/MY130149A/en unknown
- 1994-06-30 CN CN94107806A patent/CN1103511A/zh active Pending
- 1994-07-12 TW TW083106329A patent/TW260812B/zh active
- 1994-07-20 JP JP6189009A patent/JPH0760624A/ja active Pending
- 1994-07-20 KR KR1019940017541A patent/KR950004435A/ko not_active Ceased
- 1994-07-27 IT ITRM940495A patent/IT1272345B/it active IP Right Grant
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102642253A (zh) * | 2012-05-04 | 2012-08-22 | 上海华力微电子有限公司 | 一种硅片切边方法及其装置 |
| CN102642253B (zh) * | 2012-05-04 | 2014-12-10 | 上海华力微电子有限公司 | 一种硅片切边方法及其装置 |
| CN104284755A (zh) * | 2012-05-07 | 2015-01-14 | 信越半导体股份有限公司 | 圆板形工件用外周研磨装置 |
| US9358655B2 (en) | 2012-05-07 | 2016-06-07 | Shin-Etsu Handotai Co., Ltd. | Outer periphery polishing apparatus for disc-shaped workpiece |
| CN115551676A (zh) * | 2020-06-08 | 2022-12-30 | 胜高股份有限公司 | 晶片外周部的研磨装置 |
| CN113182971A (zh) * | 2021-05-12 | 2021-07-30 | 四川雅吉芯电子科技有限公司 | 一种单晶硅外延片高精度磨边装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| ITRM940495A1 (it) | 1996-01-27 |
| TW260812B (enrdf_load_stackoverflow) | 1995-10-21 |
| MY130149A (en) | 2007-06-29 |
| ITRM940495A0 (it) | 1994-07-27 |
| KR950004435A (ko) | 1995-02-18 |
| JPH0760624A (ja) | 1995-03-07 |
| DE4325518A1 (de) | 1995-02-02 |
| IT1272345B (it) | 1997-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1103511A (zh) | 精磨半导体晶片的边沿的方法 | |
| US5569062A (en) | Polishing pad conditioning | |
| US6641464B1 (en) | Method and apparatus for polishing the edge of a bonded wafer | |
| JP3197253B2 (ja) | ウエーハの面取り方法 | |
| WO2000063963A1 (en) | Non-abrasive conditioning for polishing pads | |
| JPH05208363A (ja) | 改善型サンプル保持テーブル付き研磨装置 | |
| CN1004244B (zh) | 在半导体功率元件的半导体薄片边缘上开环形槽的方法 | |
| US6656818B1 (en) | Manufacturing process for semiconductor wafer comprising surface grinding and planarization or polishing | |
| CN1446142A (zh) | 用双面抛光加工半导体晶片的方法 | |
| JP4688456B2 (ja) | 化学的機械的研磨装置 | |
| CN104669071B (zh) | 一种复合材料的磨抛加工工艺 | |
| JP2001150356A (ja) | 研削装置の鏡面研削用砥石及び鏡面研削方法 | |
| US6866560B1 (en) | Method for thinning specimen | |
| KR20230165236A (ko) | 웨이퍼 가공 방법 및 웨이퍼 | |
| JPH05208373A (ja) | 切断砥石及び切断方法 | |
| JPS6294224A (ja) | アルミニウムの表面加工方法 | |
| JP3895965B2 (ja) | 多結晶Ｓｉインゴットの表面処理方法 | |
| JPH05285807A (ja) | 超精密加工法 | |
| Yasunaga et al. | Development of sequential grinding-polishing process applicable to large-size Si wafer finishing | |
| CN222608932U (zh) | 一种金属刀具的精加工磨床 | |
| CN216138680U (zh) | 一种用于辊件表面抛光的装置 | |
| CN216939767U (zh) | 一种电动磨刀器 | |
| JPS6322949B2 (enrdf_load_stackoverflow) | ||
| JPH03104567A (ja) | 研削砥石及び研削方法 | |
| JPH0295574A (ja) | 電解ドレッシング研削法と導電性砥石を工具に兼用した研磨法の複合加工方法および装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: German Burghausen Applicant after: Wacker Siltronic Gesellschaft Fuer, Halbleitermaterialien mbH Address before: German Burghausen Applicant before: Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe mbH |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: WACKER-CHEMITRONIC GESELLSCHAFT FUER ELEKTRONIK-GRUNDSTOFFE MBH TO: WACKER SILTRNOIC GESELLSCHAFT FUER HALBLEITERMATERIALIEN MBH |
|
| C01 | Deemed withdrawal of patent application (patent law 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |