KR950004435A - 반도체웨이퍼의 에지를 다듬질하는 방법 - Google Patents

반도체웨이퍼의 에지를 다듬질하는 방법 Download PDF

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Publication number
KR950004435A
KR950004435A KR1019940017541A KR19940017541A KR950004435A KR 950004435 A KR950004435 A KR 950004435A KR 1019940017541 A KR1019940017541 A KR 1019940017541A KR 19940017541 A KR19940017541 A KR 19940017541A KR 950004435 A KR950004435 A KR 950004435A
Authority
KR
South Korea
Prior art keywords
semiconductor wafer
edge
diamond
operating surface
finish edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019940017541A
Other languages
English (en)
Korean (ko)
Inventor
부베르 안톤
융게 요아힘
Original Assignee
루돌프 스타우디글, 균터 시르베
와커-헤미트로닉 게셀샤프트 퓌르 에렉트로닉-그룬드스토프 엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 루돌프 스타우디글, 균터 시르베, 와커-헤미트로닉 게셀샤프트 퓌르 에렉트로닉-그룬드스토프 엠베하 filed Critical 루돌프 스타우디글, 균터 시르베
Publication of KR950004435A publication Critical patent/KR950004435A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
KR1019940017541A 1993-07-29 1994-07-20 반도체웨이퍼의 에지를 다듬질하는 방법 Ceased KR950004435A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4325518A DE4325518A1 (de) 1993-07-29 1993-07-29 Verfahren zur Glättung der Kante von Halbleiterscheiben
DE93-P4325518.3 1993-07-29

Publications (1)

Publication Number Publication Date
KR950004435A true KR950004435A (ko) 1995-02-18

Family

ID=6494026

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940017541A Ceased KR950004435A (ko) 1993-07-29 1994-07-20 반도체웨이퍼의 에지를 다듬질하는 방법

Country Status (7)

Country Link
JP (1) JPH0760624A (enrdf_load_stackoverflow)
KR (1) KR950004435A (enrdf_load_stackoverflow)
CN (1) CN1103511A (enrdf_load_stackoverflow)
DE (1) DE4325518A1 (enrdf_load_stackoverflow)
IT (1) IT1272345B (enrdf_load_stackoverflow)
MY (1) MY130149A (enrdf_load_stackoverflow)
TW (1) TW260812B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030043697A (ko) * 2001-11-26 2003-06-02 가부시끼가이샤 도시바 반도체 장치의 제조 방법 및 연마 장치

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11245151A (ja) * 1998-02-27 1999-09-14 Speedfam Co Ltd ワークの外周研磨装置
JP3197253B2 (ja) * 1998-04-13 2001-08-13 株式会社日平トヤマ ウエーハの面取り方法
JP2000158315A (ja) * 1998-11-27 2000-06-13 Speedfam-Ipec Co Ltd 端面研磨装置におけるノッチ研磨装置のノッチ研磨方法
KR20000076987A (ko) * 1999-03-31 2000-12-26 다구마시로오 피가공물 연삭방법 및 장치
JP3510584B2 (ja) * 2000-11-07 2004-03-29 スピードファム株式会社 円板形ワークの外周研磨装置
JP2002329687A (ja) * 2001-05-02 2002-11-15 Speedfam Co Ltd デバイスウエハの外周研磨装置及び研磨方法
JP5112703B2 (ja) * 2007-01-18 2013-01-09 ダイトエレクトロン株式会社 ウェーハ面取り加工方法およびその装置
DE102009030294B4 (de) 2009-06-24 2013-04-25 Siltronic Ag Verfahren zur Politur der Kante einer Halbleiterscheibe
JP2011194561A (ja) * 2010-02-26 2011-10-06 Nakamura Tome Precision Ind Co Ltd 円盤状ワークの面取装置
CN102642253B (zh) * 2012-05-04 2014-12-10 上海华力微电子有限公司 一种硅片切边方法及其装置
SG11201406456XA (en) 2012-05-07 2015-02-27 Shinetsu Handotai Kk Outer periphery polishing apparatus for disk-shaped workpiece
DE102013210057A1 (de) 2013-05-29 2014-12-04 Siltronic Ag Verfahren zur Politur der Kante einer Halbleiterscheibe
JP7562994B2 (ja) * 2020-06-08 2024-10-08 株式会社Sumco ウェーハ外周部の研磨装置
CN113182971B (zh) * 2021-05-12 2022-11-25 四川雅吉芯电子科技有限公司 一种单晶硅外延片高精度磨边装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57184662A (en) * 1981-05-09 1982-11-13 Hitachi Ltd Chamfering method and device of wafer
JPS5958827A (ja) * 1982-09-28 1984-04-04 Toshiba Corp 半導体ウエ−ハ、半導体ウエ−ハの製造方法及び半導体ウエ−ハの製造装置
JP2719855B2 (ja) * 1991-05-24 1998-02-25 信越半導体株式会社 ウエーハ外周の鏡面面取り装置
US5128281A (en) * 1991-06-05 1992-07-07 Texas Instruments Incorporated Method for polishing semiconductor wafer edges
DE4120003A1 (de) * 1991-06-18 1992-12-24 Mueller Georg Nuernberg Vorrichtung und verfahren zum kantenverrunden von halbleiterronden
US5185965A (en) * 1991-07-12 1993-02-16 Daito Shoji Co., Ltd. Method and apparatus for grinding notches of semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030043697A (ko) * 2001-11-26 2003-06-02 가부시끼가이샤 도시바 반도체 장치의 제조 방법 및 연마 장치

Also Published As

Publication number Publication date
ITRM940495A1 (it) 1996-01-27
CN1103511A (zh) 1995-06-07
MY130149A (en) 2007-06-29
JPH0760624A (ja) 1995-03-07
TW260812B (enrdf_load_stackoverflow) 1995-10-21
DE4325518A1 (de) 1995-02-02
ITRM940495A0 (it) 1994-07-27
IT1272345B (it) 1997-06-16

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A201 Request for examination
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Patent event code: PA01091R01D

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Patent event date: 19940720

PA0201 Request for examination

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Patent event date: 19940720

Comment text: Request for Examination of Application

PG1501 Laying open of application
N231 Notification of change of applicant
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Patent event date: 19950712

Comment text: Notification of Change of Applicant

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PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19971224

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 19980326

Comment text: Decision to Refuse Application

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Patent event date: 19971224

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I