JPH0585502B2 - - Google Patents
Info
- Publication number
- JPH0585502B2 JPH0585502B2 JP63109212A JP10921288A JPH0585502B2 JP H0585502 B2 JPH0585502 B2 JP H0585502B2 JP 63109212 A JP63109212 A JP 63109212A JP 10921288 A JP10921288 A JP 10921288A JP H0585502 B2 JPH0585502 B2 JP H0585502B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- reaction tube
- layer
- reaction
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Ceramic Products (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63109212A JPH01282153A (ja) | 1988-05-06 | 1988-05-06 | 炭化珪素質反応管 |
US07/346,736 US4999228A (en) | 1988-05-06 | 1989-05-03 | Silicon carbide diffusion tube for semi-conductor |
EP89108265A EP0340802B1 (en) | 1988-05-06 | 1989-05-08 | Silicon carbide diffusion tube for semi-conductor |
DE89108265T DE68909481T2 (de) | 1988-05-06 | 1989-05-08 | Siliciumcarbid-Diffusionsrohr für Halbleiter. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63109212A JPH01282153A (ja) | 1988-05-06 | 1988-05-06 | 炭化珪素質反応管 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01282153A JPH01282153A (ja) | 1989-11-14 |
JPH0585502B2 true JPH0585502B2 (enrdf_load_stackoverflow) | 1993-12-07 |
Family
ID=14504437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63109212A Granted JPH01282153A (ja) | 1988-05-06 | 1988-05-06 | 炭化珪素質反応管 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01282153A (enrdf_load_stackoverflow) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69131247T2 (de) * | 1990-11-20 | 1999-09-23 | Asahi Glass Co. Ltd., Tokio/Tokyo | Wärmebehandlungsapparate für Halbleiter und hochreine Siliciumcarbidteile für die Apparate und Verfahren zu ihrer Herstellung |
JPH05279123A (ja) * | 1992-02-04 | 1993-10-26 | Shin Etsu Chem Co Ltd | 半導体製造用炭化珪素質部材 |
CA2099788A1 (en) * | 1992-07-31 | 1994-02-01 | Michael A. Pickering | Ultra pure silicon carbide and high temperature semiconductor processing equipment made therefrom |
JP3642446B2 (ja) * | 1996-08-01 | 2005-04-27 | 東芝セラミックス株式会社 | 半導体ウエハ処理具 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59189622A (ja) * | 1983-04-13 | 1984-10-27 | Toshiba Ceramics Co Ltd | 半導体用拡散炉プロセスチユ−ブ |
JPS6311589A (ja) * | 1986-07-01 | 1988-01-19 | イビデン株式会社 | 耐熱性治具及びその製造方法 |
JPS6335452A (ja) * | 1986-07-31 | 1988-02-16 | 東芝セラミツクス株式会社 | 半導体拡散炉用構成部材の製造方法 |
JPS6385075A (ja) * | 1986-09-26 | 1988-04-15 | 宇部興産株式会社 | 半導体用拡散炉プロセスチユ−ブ |
-
1988
- 1988-05-06 JP JP63109212A patent/JPH01282153A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH01282153A (ja) | 1989-11-14 |
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