JPH0576548B2 - - Google Patents

Info

Publication number
JPH0576548B2
JPH0576548B2 JP60003438A JP343885A JPH0576548B2 JP H0576548 B2 JPH0576548 B2 JP H0576548B2 JP 60003438 A JP60003438 A JP 60003438A JP 343885 A JP343885 A JP 343885A JP H0576548 B2 JPH0576548 B2 JP H0576548B2
Authority
JP
Japan
Prior art keywords
tungsten
layer
silicon
housing
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60003438A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60200966A (ja
Inventor
Eru Burosu Danieru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Genus Inc
Original Assignee
Genus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genus Inc filed Critical Genus Inc
Publication of JPS60200966A publication Critical patent/JPS60200966A/ja
Publication of JPH0576548B2 publication Critical patent/JPH0576548B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H10D64/0112—
    • H10P50/242—
    • H10W20/057—
    • H10W20/066—
    • H10W20/4441—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP60003438A 1984-03-16 1985-01-14 複合被膜 Granted JPS60200966A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/590,117 US4629635A (en) 1984-03-16 1984-03-16 Process for depositing a low resistivity tungsten silicon composite film on a substrate
US590117 2000-06-08

Publications (2)

Publication Number Publication Date
JPS60200966A JPS60200966A (ja) 1985-10-11
JPH0576548B2 true JPH0576548B2 (enExample) 1993-10-22

Family

ID=24360943

Family Applications (2)

Application Number Title Priority Date Filing Date
JP60003438A Granted JPS60200966A (ja) 1984-03-16 1985-01-14 複合被膜
JP5100845A Expired - Lifetime JP2597072B2 (ja) 1984-03-16 1993-04-27 複合被膜を沈積する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP5100845A Expired - Lifetime JP2597072B2 (ja) 1984-03-16 1993-04-27 複合被膜を沈積する方法

Country Status (4)

Country Link
US (1) US4629635A (enExample)
EP (1) EP0157052B1 (enExample)
JP (2) JPS60200966A (enExample)
DE (1) DE3480309D1 (enExample)

Families Citing this family (99)

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US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
JPH0752718B2 (ja) * 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US6113701A (en) 1985-02-14 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
JPS61250172A (ja) * 1985-04-25 1986-11-07 Fujitsu Ltd タングステンシリサイド膜の成長方法
JPS61270870A (ja) * 1985-05-25 1986-12-01 Mitsubishi Electric Corp 半導体装置
JPS61272379A (ja) * 1985-05-27 1986-12-02 Fujitsu Ltd アルミニウムのｃｖｄ方法
US4617087A (en) * 1985-09-27 1986-10-14 International Business Machines Corporation Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6673722B1 (en) * 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US4796562A (en) * 1985-12-03 1989-01-10 Varian Associates, Inc. Rapid thermal cvd apparatus
US4709655A (en) * 1985-12-03 1987-12-01 Varian Associates, Inc. Chemical vapor deposition apparatus
JPS62216224A (ja) * 1986-03-17 1987-09-22 Fujitsu Ltd タングステンの選択成長方法
US4732801A (en) * 1986-04-30 1988-03-22 International Business Machines Corporation Graded oxide/nitride via structure and method of fabrication therefor
US4766006A (en) * 1986-05-15 1988-08-23 Varian Associates, Inc. Low pressure chemical vapor deposition of metal silicide
US4968644A (en) * 1986-06-16 1990-11-06 At&T Bell Laboratories Method for fabricating devices and devices formed thereby
EP0252667B1 (en) * 1986-06-30 1996-03-27 Nihon Sinku Gijutsu Kabushiki Kaisha Chemical vapour deposition methods
DE3751755T2 (de) * 1986-06-30 1997-04-03 Nihon Sinku Gijutsu K K Verfahren und Vorrichtung zum Abscheiden aus der Gasphase
WO1988001102A1 (en) * 1986-07-31 1988-02-11 American Telephone & Telegraph Company Semiconductor devices having improved metallization
US4684542A (en) * 1986-08-11 1987-08-04 International Business Machines Corporation Low pressure chemical vapor deposition of tungsten silicide
JPS6381948A (ja) * 1986-09-26 1988-04-12 Toshiba Corp 多層配線半導体装置
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5871811A (en) * 1986-12-19 1999-02-16 Applied Materials, Inc. Method for protecting against deposition on a selected region of a substrate
US4884123A (en) * 1987-02-19 1989-11-28 Advanced Micro Devices, Inc. Contact plug and interconnect employing a barrier lining and a backfilled conductor material
US4812419A (en) * 1987-04-30 1989-03-14 Hewlett-Packard Company Via connection with thin resistivity layer
US5223455A (en) * 1987-07-10 1993-06-29 Kabushiki Kaisha Toshiba Method of forming refractory metal film
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US4904621A (en) * 1987-07-16 1990-02-27 Texas Instruments Incorporated Remote plasma generation process using a two-stage showerhead
US4849067A (en) * 1987-07-16 1989-07-18 Texas Instruments Incorporated Method for etching tungsten
US4863558A (en) * 1987-07-16 1989-09-05 Texas Instruments Incorporated Method for etching tungsten
US4844773A (en) * 1987-07-16 1989-07-04 Texas Instruments Incorporated Process for etching silicon nitride film
US4855016A (en) * 1987-07-16 1989-08-08 Texas Instruments Incorporated Method for etching aluminum film doped with copper
US4855160A (en) * 1987-07-16 1989-08-08 Texas Instruments Incorporated Method for passivating wafer
US4872938A (en) * 1987-07-16 1989-10-10 Texas Instruments Incorporated Processing apparatus
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US4838984A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for etching films of mercury-cadmium-telluride and zinc sulfid
US4816098A (en) * 1987-07-16 1989-03-28 Texas Instruments Incorporated Apparatus for transferring workpieces
US4822450A (en) * 1987-07-16 1989-04-18 Texas Instruments Incorporated Processing apparatus and method
US4832778A (en) * 1987-07-16 1989-05-23 Texas Instruments Inc. Processing apparatus for wafers
US4830700A (en) * 1987-07-16 1989-05-16 Texas Instruments Incorporated Processing apparatus and method
US4838990A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for plasma etching tungsten
US4830705A (en) * 1987-07-16 1989-05-16 Texas Instruments Incorporated Method for etch of GaAs
US4867841A (en) * 1987-07-16 1989-09-19 Texas Instruments Incorporated Method for etch of polysilicon film
US4832777A (en) * 1987-07-16 1989-05-23 Texas Instruments Incorporated Processing apparatus and method
US4818326A (en) * 1987-07-16 1989-04-04 Texas Instruments Incorporated Processing apparatus
US4820377A (en) * 1987-07-16 1989-04-11 Texas Instruments Incorporated Method for cleanup processing chamber and vacuum process module
US4828649A (en) * 1987-07-16 1989-05-09 Texas Instruments Incorporated Method for etching an aluminum film doped with silicon
US4891488A (en) * 1987-07-16 1990-01-02 Texas Instruments Incorporated Processing apparatus and method
US4837113A (en) * 1987-07-16 1989-06-06 Texas Instruments Incorporated Method for depositing compound from group II-VI
US4832779A (en) * 1987-07-16 1989-05-23 Texas Instruments Incorporated Processing apparatus
US4842687A (en) * 1987-07-16 1989-06-27 Texas Instruments Incorporated Method for etching tungsten
US4842686A (en) * 1987-07-17 1989-06-27 Texas Instruments Incorporated Wafer processing apparatus and method
JPH0656841B2 (ja) * 1987-10-15 1994-07-27 日電アネルバ株式会社 タングステンの選択成長方法
FR2622052B1 (fr) * 1987-10-19 1990-02-16 Air Liquide Procede de depot de siliciure de metal refractaire pour la fabrication de circuits integres
JPH01109770A (ja) * 1987-10-22 1989-04-26 Mitsubishi Electric Corp 半導体装置の製造方法
JPH021988A (ja) * 1987-12-03 1990-01-08 Texas Instr Inc <Ti> 電気的にプログラム可能なメモリ・セル
JP2627756B2 (ja) * 1987-12-17 1997-07-09 富士通株式会社 半導体装置の製造方法
NL8800221A (nl) * 1988-01-29 1989-08-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
JP2768685B2 (ja) * 1988-03-28 1998-06-25 株式会社東芝 半導体装置の製造方法及びその装置
US4988533A (en) * 1988-05-27 1991-01-29 Texas Instruments Incorporated Method for deposition of silicon oxide on a wafer
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ES2015776A6 (es) * 1988-10-07 1990-09-01 American Telephone & Telegraph Metodo de fabricacion de dispositivos semiconductores.
KR940000906B1 (ko) * 1988-11-21 1994-02-04 가부시키가이샤 도시바 반도체장치의 제조방법
JPH02298270A (ja) * 1989-02-17 1990-12-10 Tokyo Electron Ltd 成膜方法
US4985372A (en) * 1989-02-17 1991-01-15 Tokyo Electron Limited Method of forming conductive layer including removal of native oxide
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JP2708533B2 (ja) * 1989-03-14 1998-02-04 富士通株式会社 Ｃｖｄ装置の残留ガス除去方法
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JP2888253B2 (ja) * 1989-07-20 1999-05-10 富士通株式会社 化学気相成長法およびその実施のための装置
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
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JPH05504790A (ja) * 1990-04-03 1993-07-22 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 高純度金属の低温化学気相付着のための製造システム
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JPH0576548A (ja) * 1991-09-13 1993-03-30 Ube Ind Ltd 義歯のリベース法

Also Published As

Publication number Publication date
EP0157052B1 (en) 1989-10-25
JPH07118855A (ja) 1995-05-09
JPS60200966A (ja) 1985-10-11
EP0157052A1 (en) 1985-10-09
US4629635A (en) 1986-12-16
DE3480309D1 (en) 1989-11-30
JP2597072B2 (ja) 1997-04-02

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