JPS60200966A - 複合被膜 - Google Patents

複合被膜

Info

Publication number
JPS60200966A
JPS60200966A JP60003438A JP343885A JPS60200966A JP S60200966 A JPS60200966 A JP S60200966A JP 60003438 A JP60003438 A JP 60003438A JP 343885 A JP343885 A JP 343885A JP S60200966 A JPS60200966 A JP S60200966A
Authority
JP
Japan
Prior art keywords
substrate
flow rate
tungsten
silicon
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60003438A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0576548B2 (enExample
Inventor
ダニエル　エル．ブロス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Genus Inc
Original Assignee
Genus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genus Inc filed Critical Genus Inc
Publication of JPS60200966A publication Critical patent/JPS60200966A/ja
Publication of JPH0576548B2 publication Critical patent/JPH0576548B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/066—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by forming silicides of refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4437—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal
    • H10W20/4441—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal the principal metal being a refractory metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP60003438A 1984-03-16 1985-01-14 複合被膜 Granted JPS60200966A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/590,117 US4629635A (en) 1984-03-16 1984-03-16 Process for depositing a low resistivity tungsten silicon composite film on a substrate
US590117 1996-01-23

Publications (2)

Publication Number Publication Date
JPS60200966A true JPS60200966A (ja) 1985-10-11
JPH0576548B2 JPH0576548B2 (enExample) 1993-10-22

Family

ID=24360943

Family Applications (2)

Application Number Title Priority Date Filing Date
JP60003438A Granted JPS60200966A (ja) 1984-03-16 1985-01-14 複合被膜
JP5100845A Expired - Lifetime JP2597072B2 (ja) 1984-03-16 1993-04-27 複合被膜を沈積する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP5100845A Expired - Lifetime JP2597072B2 (ja) 1984-03-16 1993-04-27 複合被膜を沈積する方法

Country Status (4)

Country Link
US (1) US4629635A (enExample)
EP (1) EP0157052B1 (enExample)
JP (2) JPS60200966A (enExample)
DE (1) DE3480309D1 (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61250172A (ja) * 1985-04-25 1986-11-07 Fujitsu Ltd タングステンシリサイド膜の成長方法
JPS61272379A (ja) * 1985-05-27 1986-12-02 Fujitsu Ltd アルミニウムのｃｖｄ方法
JPS6278816A (ja) * 1985-09-27 1987-04-11 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション シリコン基板上に金属を選択的に付着する方法
JPS62216224A (ja) * 1986-03-17 1987-09-22 Fujitsu Ltd タングステンの選択成長方法
JPS62267472A (ja) * 1986-05-15 1987-11-20 バリアン・アソシエイツ・インコ−ポレイテッド メタルシリサイドの低圧化学蒸着
JPS63205951A (ja) * 1987-02-19 1988-08-25 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド 安定な低抵抗コンタクト
JPH01101626A (ja) * 1987-10-15 1989-04-19 Anelva Corp タングステンの選択成長方法
JPH01160012A (ja) * 1987-12-17 1989-06-22 Fujitsu Ltd 半導体装置の製造方法
JPH02272727A (ja) * 1989-04-14 1990-11-07 Fujitsu Ltd 配線形成方法
JPH02298270A (ja) * 1989-02-17 1990-12-10 Tokyo Electron Ltd 成膜方法
JPH07118855A (ja) * 1984-03-16 1995-05-09 Genus Inc 複合被膜を沈積する方法

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US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
US5780313A (en) 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
JPH0752718B2 (ja) * 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
JPS61270870A (ja) * 1985-05-25 1986-12-01 Mitsubishi Electric Corp 半導体装置
US6673722B1 (en) * 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US4796562A (en) * 1985-12-03 1989-01-10 Varian Associates, Inc. Rapid thermal cvd apparatus
US4709655A (en) * 1985-12-03 1987-12-01 Varian Associates, Inc. Chemical vapor deposition apparatus
US4732801A (en) * 1986-04-30 1988-03-22 International Business Machines Corporation Graded oxide/nitride via structure and method of fabrication therefor
US4968644A (en) * 1986-06-16 1990-11-06 At&T Bell Laboratories Method for fabricating devices and devices formed thereby
EP0252667B1 (en) * 1986-06-30 1996-03-27 Nihon Sinku Gijutsu Kabushiki Kaisha Chemical vapour deposition methods
US4994301A (en) * 1986-06-30 1991-02-19 Nihon Sinku Gijutsu Kabusiki Kaisha ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate
WO1988001102A1 (en) * 1986-07-31 1988-02-11 American Telephone & Telegraph Company Semiconductor devices having improved metallization
US4684542A (en) * 1986-08-11 1987-08-04 International Business Machines Corporation Low pressure chemical vapor deposition of tungsten silicide
JPS6381948A (ja) * 1986-09-26 1988-04-12 Toshiba Corp 多層配線半導体装置
US5755886A (en) * 1986-12-19 1998-05-26 Applied Materials, Inc. Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4812419A (en) * 1987-04-30 1989-03-14 Hewlett-Packard Company Via connection with thin resistivity layer
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US4828649A (en) * 1987-07-16 1989-05-09 Texas Instruments Incorporated Method for etching an aluminum film doped with silicon
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US4822450A (en) * 1987-07-16 1989-04-18 Texas Instruments Incorporated Processing apparatus and method
US4832778A (en) * 1987-07-16 1989-05-23 Texas Instruments Inc. Processing apparatus for wafers
US4904621A (en) * 1987-07-16 1990-02-27 Texas Instruments Incorporated Remote plasma generation process using a two-stage showerhead
US4837113A (en) * 1987-07-16 1989-06-06 Texas Instruments Incorporated Method for depositing compound from group II-VI
US4844773A (en) * 1987-07-16 1989-07-04 Texas Instruments Incorporated Process for etching silicon nitride film
US4830700A (en) * 1987-07-16 1989-05-16 Texas Instruments Incorporated Processing apparatus and method
US4820377A (en) * 1987-07-16 1989-04-11 Texas Instruments Incorporated Method for cleanup processing chamber and vacuum process module
US4842687A (en) * 1987-07-16 1989-06-27 Texas Instruments Incorporated Method for etching tungsten
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US4872938A (en) * 1987-07-16 1989-10-10 Texas Instruments Incorporated Processing apparatus
US4891488A (en) * 1987-07-16 1990-01-02 Texas Instruments Incorporated Processing apparatus and method
US4830705A (en) * 1987-07-16 1989-05-16 Texas Instruments Incorporated Method for etch of GaAs
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US4838984A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for etching films of mercury-cadmium-telluride and zinc sulfid
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US4842686A (en) * 1987-07-17 1989-06-27 Texas Instruments Incorporated Wafer processing apparatus and method
FR2622052B1 (fr) * 1987-10-19 1990-02-16 Air Liquide Procede de depot de siliciure de metal refractaire pour la fabrication de circuits integres
JPH01109770A (ja) * 1987-10-22 1989-04-26 Mitsubishi Electric Corp 半導体装置の製造方法
JPH021988A (ja) * 1987-12-03 1990-01-08 Texas Instr Inc <Ti> 電気的にプログラム可能なメモリ・セル
NL8800221A (nl) * 1988-01-29 1989-08-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
JP2768685B2 (ja) * 1988-03-28 1998-06-25 株式会社東芝 半導体装置の製造方法及びその装置
US4988533A (en) * 1988-05-27 1991-01-29 Texas Instruments Incorporated Method for deposition of silicon oxide on a wafer
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ES2015776A6 (es) * 1988-10-07 1990-09-01 American Telephone & Telegraph Metodo de fabricacion de dispositivos semiconductores.
DE68926656T2 (de) * 1988-11-21 1996-11-28 Toshiba Kawasaki Kk Verfahren zum Herstellen eines Halbleiterbauelementes
US4985372A (en) * 1989-02-17 1991-01-15 Tokyo Electron Limited Method of forming conductive layer including removal of native oxide
NL8900469A (nl) * 1989-02-24 1990-09-17 Imec Inter Uni Micro Electr Werkwijze en toestel voor het aanbrengen van epitaxiaal silicium en silicides.
JP2708533B2 (ja) * 1989-03-14 1998-02-04 富士通株式会社 Ｃｖｄ装置の残留ガス除去方法
US5104694A (en) * 1989-04-21 1992-04-14 Nippon Telephone & Telegraph Corporation Selective chemical vapor deposition of a metallic film on the silicon surface
JP2888253B2 (ja) * 1989-07-20 1999-05-10 富士通株式会社 化学気相成長法およびその実施のための装置
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5075256A (en) * 1989-08-25 1991-12-24 Applied Materials, Inc. Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
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US5997950A (en) * 1992-12-22 1999-12-07 Applied Materials, Inc. Substrate having uniform tungsten silicide film and method of manufacture
US5647911A (en) * 1993-12-14 1997-07-15 Sony Corporation Gas diffuser plate assembly and RF electrode
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JPH0576548A (ja) * 1991-09-13 1993-03-30 Ube Ind Ltd 義歯のリベース法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07118855A (ja) * 1984-03-16 1995-05-09 Genus Inc 複合被膜を沈積する方法
JPS61250172A (ja) * 1985-04-25 1986-11-07 Fujitsu Ltd タングステンシリサイド膜の成長方法
JPS61272379A (ja) * 1985-05-27 1986-12-02 Fujitsu Ltd アルミニウムのｃｖｄ方法
JPS6278816A (ja) * 1985-09-27 1987-04-11 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション シリコン基板上に金属を選択的に付着する方法
JPS62216224A (ja) * 1986-03-17 1987-09-22 Fujitsu Ltd タングステンの選択成長方法
JPS62267472A (ja) * 1986-05-15 1987-11-20 バリアン・アソシエイツ・インコ−ポレイテッド メタルシリサイドの低圧化学蒸着
JPS63205951A (ja) * 1987-02-19 1988-08-25 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド 安定な低抵抗コンタクト
JPH01101626A (ja) * 1987-10-15 1989-04-19 Anelva Corp タングステンの選択成長方法
JPH01160012A (ja) * 1987-12-17 1989-06-22 Fujitsu Ltd 半導体装置の製造方法
JPH02298270A (ja) * 1989-02-17 1990-12-10 Tokyo Electron Ltd 成膜方法
JPH02272727A (ja) * 1989-04-14 1990-11-07 Fujitsu Ltd 配線形成方法

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Publication number Publication date
JPH07118855A (ja) 1995-05-09
JPH0576548B2 (enExample) 1993-10-22
US4629635A (en) 1986-12-16
JP2597072B2 (ja) 1997-04-02
EP0157052B1 (en) 1989-10-25
EP0157052A1 (en) 1985-10-09
DE3480309D1 (en) 1989-11-30

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