ATE302294T1 - Verfahren zur chemischen dampfablagerung von wolfram auf einem halbleitersubstrat - Google Patents
Verfahren zur chemischen dampfablagerung von wolfram auf einem halbleitersubstratInfo
- Publication number
- ATE302294T1 ATE302294T1 AT00403705T AT00403705T ATE302294T1 AT E302294 T1 ATE302294 T1 AT E302294T1 AT 00403705 T AT00403705 T AT 00403705T AT 00403705 T AT00403705 T AT 00403705T AT E302294 T1 ATE302294 T1 AT E302294T1
- Authority
- AT
- Austria
- Prior art keywords
- tungsten
- substrate
- chemical vapor
- semiconductor substrate
- vapor deposition
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052721 tungsten Inorganic materials 0.000 title abstract 3
- 239000010937 tungsten Substances 0.000 title abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 abstract 4
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 abstract 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000012159 carrier gas Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP00403705A EP1219725B1 (de) | 2000-12-28 | 2000-12-28 | Verfahren zur chemischen Dampfablagerung von Wolfram auf einem Halbleitersubstrat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE302294T1 true ATE302294T1 (de) | 2005-09-15 |
Family
ID=8174012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT00403705T ATE302294T1 (de) | 2000-12-28 | 2000-12-28 | Verfahren zur chemischen dampfablagerung von wolfram auf einem halbleitersubstrat |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6544889B2 (de) |
| EP (1) | EP1219725B1 (de) |
| JP (1) | JP2002212725A (de) |
| CN (1) | CN1366334A (de) |
| AT (1) | ATE302294T1 (de) |
| DE (1) | DE60022067T2 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6644889B2 (en) * | 1998-10-21 | 2003-11-11 | Hartman Ew, Inc. | Headwall for drain pipe |
| US6699788B2 (en) * | 2001-11-13 | 2004-03-02 | Chartered Semiconductors Manufacturing Limited | Method for integrated nucleation and bulk film deposition |
| KR100884339B1 (ko) * | 2006-06-29 | 2009-02-18 | 주식회사 하이닉스반도체 | 반도체 소자의 텅스텐막 형성방법 및 이를 이용한 텅스텐배선층 형성방법 |
| US20130224948A1 (en) * | 2012-02-28 | 2013-08-29 | Globalfoundries Inc. | Methods for deposition of tungsten in the fabrication of an integrated circuit |
| US8834830B2 (en) | 2012-09-07 | 2014-09-16 | Midwest Inorganics LLC | Method for the preparation of anhydrous hydrogen halides, inorganic substances and/or inorganic hydrides by using as reactants inorganic halides and reducing agents |
| CN104975268A (zh) * | 2015-06-03 | 2015-10-14 | 武汉新芯集成电路制造有限公司 | 一种金属钨薄膜的制备方法 |
| TWI720106B (zh) * | 2016-01-16 | 2021-03-01 | 美商應用材料股份有限公司 | Pecvd含鎢硬遮罩膜及製造方法 |
| US10192775B2 (en) | 2016-03-17 | 2019-01-29 | Applied Materials, Inc. | Methods for gapfill in high aspect ratio structures |
| JP6913752B2 (ja) | 2016-12-15 | 2021-08-04 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 核形成のない間隙充填ａｌｄプロセス |
| CN107481926A (zh) * | 2017-08-31 | 2017-12-15 | 长江存储科技有限责任公司 | 一种金属钨的填充方法 |
| US11810766B2 (en) * | 2018-07-05 | 2023-11-07 | Applied Materials, Inc. | Protection of aluminum process chamber components |
| US11133178B2 (en) | 2019-09-20 | 2021-09-28 | Applied Materials, Inc. | Seamless gapfill with dielectric ALD films |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4629635A (en) * | 1984-03-16 | 1986-12-16 | Genus, Inc. | Process for depositing a low resistivity tungsten silicon composite film on a substrate |
| US5028565A (en) | 1989-08-25 | 1991-07-02 | Applied Materials, Inc. | Process for CVD deposition of tungsten layer on semiconductor wafer |
| EP0486927A1 (de) * | 1990-11-20 | 1992-05-27 | Air Products And Chemicals, Inc. | Abscheidung von Wolframschichten aus Mischungen von Wolframhexafluorid, Organohydrosilanen und Wasserstoff |
| CA2067565C (en) * | 1992-04-29 | 1999-02-16 | Ismail T. Emesh | Deposition of tungsten |
| US6162715A (en) * | 1997-06-30 | 2000-12-19 | Applied Materials, Inc. | Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride |
| US5795824A (en) | 1997-08-28 | 1998-08-18 | Novellus Systems, Inc. | Method for nucleation of CVD tungsten films |
-
2000
- 2000-12-28 EP EP00403705A patent/EP1219725B1/de not_active Expired - Lifetime
- 2000-12-28 DE DE60022067T patent/DE60022067T2/de not_active Expired - Lifetime
- 2000-12-28 AT AT00403705T patent/ATE302294T1/de not_active IP Right Cessation
-
2001
- 2001-01-24 US US09/768,151 patent/US6544889B2/en not_active Expired - Lifetime
- 2001-12-26 JP JP2001393381A patent/JP2002212725A/ja not_active Withdrawn
- 2001-12-28 CN CN01144080A patent/CN1366334A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US6544889B2 (en) | 2003-04-08 |
| EP1219725B1 (de) | 2005-08-17 |
| DE60022067T2 (de) | 2006-06-01 |
| US20020086110A1 (en) | 2002-07-04 |
| DE60022067D1 (de) | 2005-09-22 |
| CN1366334A (zh) | 2002-08-28 |
| JP2002212725A (ja) | 2002-07-31 |
| EP1219725A1 (de) | 2002-07-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |