JPH0465549B2 - - Google Patents

Info

Publication number
JPH0465549B2
JPH0465549B2 JP54037426A JP3742679A JPH0465549B2 JP H0465549 B2 JPH0465549 B2 JP H0465549B2 JP 54037426 A JP54037426 A JP 54037426A JP 3742679 A JP3742679 A JP 3742679A JP H0465549 B2 JPH0465549 B2 JP H0465549B2
Authority
JP
Japan
Prior art keywords
region
layer
drain
source
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54037426A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55130171A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3742679A priority Critical patent/JPS55130171A/ja
Publication of JPS55130171A publication Critical patent/JPS55130171A/ja
Publication of JPH0465549B2 publication Critical patent/JPH0465549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/022—Manufacture or treatment of FETs having insulated gates [IGFET] having lightly-doped source or drain extensions selectively formed at the sides of the gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP3742679A 1979-03-29 1979-03-29 Mos field effect transistor Granted JPS55130171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3742679A JPS55130171A (en) 1979-03-29 1979-03-29 Mos field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3742679A JPS55130171A (en) 1979-03-29 1979-03-29 Mos field effect transistor

Publications (2)

Publication Number Publication Date
JPS55130171A JPS55130171A (en) 1980-10-08
JPH0465549B2 true JPH0465549B2 (enrdf_load_stackoverflow) 1992-10-20

Family

ID=12497181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3742679A Granted JPS55130171A (en) 1979-03-29 1979-03-29 Mos field effect transistor

Country Status (1)

Country Link
JP (1) JPS55130171A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139471A (ja) * 1982-02-15 1983-08-18 Fujitsu Ltd Ｍｉｓ電界効果トランジスタ
DE3739501A1 (de) * 1986-11-26 1988-06-01 Hewlett Packard Co Mos-transistor
JP2746482B2 (ja) * 1991-02-14 1998-05-06 三菱電機株式会社 電界効果型トランジスタ及びその製造方法
US5894158A (en) * 1991-09-30 1999-04-13 Stmicroelectronics, Inc. Having halo regions integrated circuit device structure
JP2001352057A (ja) 2000-06-09 2001-12-21 Mitsubishi Electric Corp 半導体装置、およびその製造方法
US7485514B2 (en) * 2006-01-05 2009-02-03 Winslow Thomas A Method for fabricating a MESFET
CN101299439B (zh) 2008-06-24 2011-06-22 广州南科集成电子有限公司 耐高压恒流源器件及制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853514B2 (ja) * 1974-10-16 1983-11-29 セイコーエプソン株式会社 半導体装置の製造方法
JPS51114074A (en) * 1975-03-31 1976-10-07 Sony Corp Insulation gate type field effect transistor
JPS5227280A (en) * 1975-08-25 1977-03-01 Sony Corp Method to form pinholes
JPS5291381A (en) * 1976-01-26 1977-08-01 Nec Corp Field effect type semiconductor device
JPS52107777A (en) * 1976-03-08 1977-09-09 Nippon Telegr & Teleph Corp <Ntt> Production of semiconductor unit
JPS5321582A (en) * 1976-08-11 1978-02-28 Mitsubishi Electric Corp Mos type semiconductor device

Also Published As

Publication number Publication date
JPS55130171A (en) 1980-10-08

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