JPS55130171A - Mos field effect transistor - Google Patents

Mos field effect transistor

Info

Publication number
JPS55130171A
JPS55130171A JP3742679A JP3742679A JPS55130171A JP S55130171 A JPS55130171 A JP S55130171A JP 3742679 A JP3742679 A JP 3742679A JP 3742679 A JP3742679 A JP 3742679A JP S55130171 A JPS55130171 A JP S55130171A
Authority
JP
Japan
Prior art keywords
region
source
drain
regions
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3742679A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0465549B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3742679A priority Critical patent/JPS55130171A/ja
Publication of JPS55130171A publication Critical patent/JPS55130171A/ja
Publication of JPH0465549B2 publication Critical patent/JPH0465549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/022—Manufacture or treatment of FETs having insulated gates [IGFET] having lightly-doped source or drain extensions selectively formed at the sides of the gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP3742679A 1979-03-29 1979-03-29 Mos field effect transistor Granted JPS55130171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3742679A JPS55130171A (en) 1979-03-29 1979-03-29 Mos field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3742679A JPS55130171A (en) 1979-03-29 1979-03-29 Mos field effect transistor

Publications (2)

Publication Number Publication Date
JPS55130171A true JPS55130171A (en) 1980-10-08
JPH0465549B2 JPH0465549B2 (enrdf_load_stackoverflow) 1992-10-20

Family

ID=12497181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3742679A Granted JPS55130171A (en) 1979-03-29 1979-03-29 Mos field effect transistor

Country Status (1)

Country Link
JP (1) JPS55130171A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139471A (ja) * 1982-02-15 1983-08-18 Fujitsu Ltd Ｍｉｓ電界効果トランジスタ
FR2607325A1 (fr) * 1986-11-26 1988-05-27 Hewlett Packard Co Transistors mos a canaux multiples
FR2673044A1 (fr) * 1991-02-14 1992-08-21 Mitsubishi Electric Corp Transistor a effet de champ comprenant une couche enterree, et procede de fabrication.
EP0535917A3 (en) * 1991-09-30 1996-06-12 Sgs Thomson Microelectronics Method for fabricating integrated circuit transistors
US6518623B1 (en) 2000-06-09 2003-02-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a buried-channel MOS structure
EP1806779A3 (en) * 2006-01-05 2009-05-27 Cobham Defense Electronic Systems Corporation Method for fabricating a MESFET and a MESFET
EP2139042A1 (en) 2008-06-24 2009-12-30 Nanker(Guang Zhou)Semiconductor Manufacturing Corp. High voltage device with constant current source and manufacturing method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144880A (enrdf_load_stackoverflow) * 1974-10-16 1976-04-16 Suwa Seikosha Kk
JPS51114074A (en) * 1975-03-31 1976-10-07 Sony Corp Insulation gate type field effect transistor
JPS5227280A (en) * 1975-08-25 1977-03-01 Sony Corp Method to form pinholes
JPS5291381A (en) * 1976-01-26 1977-08-01 Nec Corp Field effect type semiconductor device
JPS52107777A (en) * 1976-03-08 1977-09-09 Nippon Telegr & Teleph Corp <Ntt> Production of semiconductor unit
JPS5321582A (en) * 1976-08-11 1978-02-28 Mitsubishi Electric Corp Mos type semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144880A (enrdf_load_stackoverflow) * 1974-10-16 1976-04-16 Suwa Seikosha Kk
JPS51114074A (en) * 1975-03-31 1976-10-07 Sony Corp Insulation gate type field effect transistor
JPS5227280A (en) * 1975-08-25 1977-03-01 Sony Corp Method to form pinholes
JPS5291381A (en) * 1976-01-26 1977-08-01 Nec Corp Field effect type semiconductor device
JPS52107777A (en) * 1976-03-08 1977-09-09 Nippon Telegr & Teleph Corp <Ntt> Production of semiconductor unit
JPS5321582A (en) * 1976-08-11 1978-02-28 Mitsubishi Electric Corp Mos type semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139471A (ja) * 1982-02-15 1983-08-18 Fujitsu Ltd Ｍｉｓ電界効果トランジスタ
FR2607325A1 (fr) * 1986-11-26 1988-05-27 Hewlett Packard Co Transistors mos a canaux multiples
FR2673044A1 (fr) * 1991-02-14 1992-08-21 Mitsubishi Electric Corp Transistor a effet de champ comprenant une couche enterree, et procede de fabrication.
EP0535917A3 (en) * 1991-09-30 1996-06-12 Sgs Thomson Microelectronics Method for fabricating integrated circuit transistors
US5837587A (en) * 1991-09-30 1998-11-17 Sgs-Thomson Microelectronics, Inc. Method of forming an integrated circuit device
US5894158A (en) * 1991-09-30 1999-04-13 Stmicroelectronics, Inc. Having halo regions integrated circuit device structure
US6518623B1 (en) 2000-06-09 2003-02-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a buried-channel MOS structure
EP1806779A3 (en) * 2006-01-05 2009-05-27 Cobham Defense Electronic Systems Corporation Method for fabricating a MESFET and a MESFET
EP2139042A1 (en) 2008-06-24 2009-12-30 Nanker(Guang Zhou)Semiconductor Manufacturing Corp. High voltage device with constant current source and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0465549B2 (enrdf_load_stackoverflow) 1992-10-20

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