JPS5144880A - - Google Patents
Info
- Publication number
- JPS5144880A JPS5144880A JP49118085A JP11808574A JPS5144880A JP S5144880 A JPS5144880 A JP S5144880A JP 49118085 A JP49118085 A JP 49118085A JP 11808574 A JP11808574 A JP 11808574A JP S5144880 A JPS5144880 A JP S5144880A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49118085A JPS5853514B2 (ja) | 1974-10-16 | 1974-10-16 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49118085A JPS5853514B2 (ja) | 1974-10-16 | 1974-10-16 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5144880A true JPS5144880A (enrdf_load_stackoverflow) | 1976-04-16 |
JPS5853514B2 JPS5853514B2 (ja) | 1983-11-29 |
Family
ID=14727613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP49118085A Expired JPS5853514B2 (ja) | 1974-10-16 | 1974-10-16 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5853514B2 (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5550652A (en) * | 1978-09-19 | 1980-04-12 | Agency Of Ind Science & Technol | Composite element adjusting method by ion beam |
JPS55130171A (en) * | 1979-03-29 | 1980-10-08 | Fujitsu Ltd | Mos field effect transistor |
JPS6235574A (ja) * | 1985-08-08 | 1987-02-16 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS62119975A (ja) * | 1985-11-20 | 1987-06-01 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS62147773A (ja) * | 1985-12-20 | 1987-07-01 | Nec Corp | 半導体装置の製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4860583A (enrdf_load_stackoverflow) * | 1971-11-26 | 1973-08-24 |
-
1974
- 1974-10-16 JP JP49118085A patent/JPS5853514B2/ja not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4860583A (enrdf_load_stackoverflow) * | 1971-11-26 | 1973-08-24 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5550652A (en) * | 1978-09-19 | 1980-04-12 | Agency Of Ind Science & Technol | Composite element adjusting method by ion beam |
JPS55130171A (en) * | 1979-03-29 | 1980-10-08 | Fujitsu Ltd | Mos field effect transistor |
JPS6235574A (ja) * | 1985-08-08 | 1987-02-16 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS62119975A (ja) * | 1985-11-20 | 1987-06-01 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS62147773A (ja) * | 1985-12-20 | 1987-07-01 | Nec Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS5853514B2 (ja) | 1983-11-29 |