JPH0457095B2 - - Google Patents
Info
- Publication number
- JPH0457095B2 JPH0457095B2 JP60095147A JP9514785A JPH0457095B2 JP H0457095 B2 JPH0457095 B2 JP H0457095B2 JP 60095147 A JP60095147 A JP 60095147A JP 9514785 A JP9514785 A JP 9514785A JP H0457095 B2 JPH0457095 B2 JP H0457095B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- metal film
- gate
- semiconductor substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- -1 silicon ion Chemical class 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9514785A JPS61252668A (ja) | 1985-05-01 | 1985-05-01 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9514785A JPS61252668A (ja) | 1985-05-01 | 1985-05-01 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61252668A JPS61252668A (ja) | 1986-11-10 |
| JPH0457095B2 true JPH0457095B2 (ko) | 1992-09-10 |
Family
ID=14129685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9514785A Granted JPS61252668A (ja) | 1985-05-01 | 1985-05-01 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61252668A (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01103873A (ja) * | 1987-06-23 | 1989-04-20 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59197162A (ja) * | 1983-04-22 | 1984-11-08 | Nec Corp | 半導体装置 |
| JPS59207623A (ja) * | 1983-05-05 | 1984-11-24 | スタンダ−ド・テレフオンズ・アンド・ケ−ブルス・パブリツク・リミテツドカンパニ− | 半導体装置の製造方法 |
-
1985
- 1985-05-01 JP JP9514785A patent/JPS61252668A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59197162A (ja) * | 1983-04-22 | 1984-11-08 | Nec Corp | 半導体装置 |
| JPS59207623A (ja) * | 1983-05-05 | 1984-11-24 | スタンダ−ド・テレフオンズ・アンド・ケ−ブルス・パブリツク・リミテツドカンパニ− | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61252668A (ja) | 1986-11-10 |
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