JPH0425036A - マイクロ波半導体装置 - Google Patents

マイクロ波半導体装置

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Publication number
JPH0425036A
JPH0425036A JP2127677A JP12767790A JPH0425036A JP H0425036 A JPH0425036 A JP H0425036A JP 2127677 A JP2127677 A JP 2127677A JP 12767790 A JP12767790 A JP 12767790A JP H0425036 A JPH0425036 A JP H0425036A
Authority
JP
Japan
Prior art keywords
lead
microwave semiconductor
grounding
semiconductor device
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2127677A
Other languages
English (en)
Inventor
Yoshinobu Kadowaki
門脇　好伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2127677A priority Critical patent/JPH0425036A/ja
Priority to EP90308697A priority patent/EP0457985A1/en
Priority to US07/574,118 priority patent/US5057805A/en
Publication of JPH0425036A publication Critical patent/JPH0425036A/ja
Pending legal-status Critical Current

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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/491—Disposition
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  • Physics & Mathematics (AREA)
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  • General Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、マイクロ波半導体装置に関するものてあり
、特にマイクロ波半導体素子とホンデインクワイヤて接
続される接地用リー１＝’と高周波信号用り−１へとに
よりコプレーナ形高周波伝送線路を構成したマイクロ波
半導体装置に関するものである。
〔従来の技術〕
第５図は従来のマイクロ波半導体装置の一例を示ず斜視
図て、小形フラッ１ヘパツケーシを使用したものてあり
、第６図は第５図のマイクロ波半導体装置のパッケージ
を取り除いた状態を示す千面し１である。同図において
、マイクロ波半導体素子１はダイパッド３と接地用リー
ド４とからなるリードフレーム２の上記タイバット３」
−に例えば半田伺けして装着されている。リードフレー
ム２は例えばＦｅ−Ｎｉ合金により形成されている。
マイクロ波半導体素子１の接地端子は例えば八ｎからな
るボンデインクワイヤ５をボンデインクして」−記タイ
バッＩ〜３に、従って接地用り−１へ４に゛ＩＦ気的に
接続されている。また、マイクロ波半導体素子１の信号
端子は同様に例えばＡｕからなるボンデインクワイヤ６
をボンデインクして信号用リード７に電気的に接続され
ている。信号用リード７は」−記リードフレーム２と同
様に例えばＦｅ−Ｎｉ合金により形成されている。マイ
クロ波半導体素子ｌ、タイパッド３、接地用リード４お
よび信号用り−Ｆ　７の−に記タイバツ１〜３に近い部
分は例えばエポキシ樹脂からなる外装用パッケージ８に
より覆われている。
Ｉ−記のマイクロ波半導体装置をマイクロ波回路に（図
示せず）に実装する場合、接地用リード４ば」−記マイ
クロ波回路の接地線路に接続され、信号用リード７は上
記マイクロ波回路の信号線路に接続される。
〔発明か解決しようとする課題〕
従来のマイクロ波半導体装置は上記のように構成されて
いるのて、接地用リード４、信号用り−ト７はそれぞれ
独立した通常のリード線として作用するため、高周波帯
てはこれらの各リード線の線路インタフタンスか非常に
大きくなり、高周波帯ての当該マイクロ波半導体装置全
体の性能を著しく劣化させる原因となっていた。
この発明は」−記のような従来のマイクロ波半導体装置
の欠点を解消して、高周波帯でも特性か劣化することか
ないマイクロ波半導体装置を得ることを目的とする。
〔課題を解決するための手段〕
この発明によるマイクロ波半導体装置は、タイパラ１〜
と該タイパラ１〜と一体的に形成された対をなす接地用
リードとを具えたリードフレームと、上記ダイパッド上
に装着されたマイクロ波半導体素子と、上記対をなす接
地用リード相互間に該接地用リードと一定の間隔を保っ
て同一平面内で配置された信号用リードとからなり、上
記接地用リードと信号用リードとによりコプレーナ形高
周波伝送線路を構成したものである。
〔作　用〕
この発明のマイクロ波半導体装置においては、マイクロ
波半導体素子の接地端子、信号端子がそれぞれホンティ
ンクワイヤを介して接続された接地用リードと信号用リ
ードとはコプレーナ形高周波伝送線路として作用するか
ら、各リード部分のインタフタンスは実質的に無視てき
る。
〔実施例〕
第１図は一例として小形フラッ１〜パッケージを使用し
たこの発明によるマイクロ波半導体装置の第１の実施例
の平面図、第２図は第１図のマイクロ波半導体装置から
パッケージを取り除いた状態を示す平面図である。第１
図および第２図において、マイクロ波半導体素子１１は
リードフレーム１２のダイパッド１３上に例えば半田付
けして装着されている。リー）〜フレーム１２は、上記
ダイパッド１３と、該ダイパッド１３と一体的に形成さ
れた対をなず接地用リード１４とを具備している。リー
ドフレーム１２は例えばＦｅ−Ｎｉ合金、りん青銅等の
相合らなるホンデインクワイヤ１５によって上記タイバ
ット１３に接続され、従って、接地用リード１４に電気
的に接続されている。リードフレーム１２の対をなず接
地用リード１４．１４相互間には、これと一定の間隔を
保って例えばＦｅ−Ｎｉ合金、りん青銅等の銅合金、コ
バール等からなる信号用リード１７か同一平面内で配置
されており、この信号用リード１７にはマイクロ波半導
体素子１１の信号端子かホンディングワイヤ１６によっ
て電気的に接続されている。
この発明の特徴は、一対の接地用リード１４．１４と、
その間にこれらの各接地用リードと−・定の間隔を保っ
て挟まれた１木の信号用リード１７とかコプレーナ形高
周波伝送線路２０を構成している点にある。換言ずれは
、公知のコプレーナ形高周波伝従って、接地相リード１
４、信号用り−１−’１７のインタフタンスは、これを
実質的に無視することかてきる。従来のマイクロ波半導
体装置と同様に、マイクロ波半導体素子１］、タイパラ
１へ１３、および対をなず接地用リード１４．１４と信
号用リード１７のに記タイバッｌ＝：］３に近い部分は
例えばエポキシ拘脂からなる外装用パッケージ１８て覆
われており、上記接地用リード１４．１４と信号用リー
ド１７の残りの部分は上記パッケージ１８から横方向に
直線的に突出している。
第３図はこの発明のマイクロ波半導体装置の第２の実施
例の斜視図、第４図は第３図のマイクロ波半導体装置の
側面図である。この第２の実施例では、接地用リード１
４．１４と信号用リード１７のパッケージ１８から出て
いる部分は該バッツケーシ１８の側面に沿うように折曲
げられており、その先端部は」−記バッケーシの底部に
位置するようにさらに折曲けられている。一対の接地用
リード１４．１４とその間に配置された１本の信号用リ
ード１７とによってコプレーナ形高周波伝送線路２０を
構成していることは第１図および第２図に示す第１の実
施例と同様である。この第２の実施例によるマイクロ波
半導体装置は、これを例えはマイクロ波回路ノ１（板ト
に直接実装するときに特に有効である。
（発明の効果） 以上のように、この発明のマイクロ波半導体装置は、接
地用リードと信号用リードとからなるパッケージ１８の
引出し線路、つまりリードをコプレーナ形高周波伝送線
路とし、マイクロ波半導体素子１１を上記バッケーシ１
８内てコプレーナ形高周波伝送線路に直接接続する構成
としたのて、例えは第５図、第６図に示すような従来の
マイクロ波半導体装置に比して接地インタフタンスを著
しく減少ささせることかてきると共に、信号用リードの
インタフタンスの影響を無視することができる。
よって、この発明によれは、高周波帯での特性か極めて
優れたマイクロ波半導体装置を得ることかできる。
【図面の簡単な説明】
第１図はこの発明のマイクロ波半導体装置の第１の実施
例の平面図、第２図は第１図に示すこの発明のマイクロ
波半導体装置のパッケージを取り除いた状態を示す平面
図、第３図はこの発明のマイクロ波半導体装置の第２の
実施例を示す斜視図、第４図は第３図のマイクロ波半導
体装置の側面図、第５図は従来のマイクロ波半導体装置
の一例を示す斜視図、第６図は第５図に示す従来のマイ
クロ波半導体装置すバッケーシを取り除いた状態を示す
平面図である。 １１・・・・マイクロ波半導体素子、１２・・・・ソー
１ヘフレーム、１３・・・・ダイパッド、１４・・・・
接地用り−ト、１５．１６・・・・ホンデインクワイヤ
、１７・・・・信号用リード、２０・・・・コプレーナ
形高周波伝送線路。 代　　理　　人　　　　　大　　岩　　　増　　雄ＯＯ ヘ　　　　へ

Claims (3)

    【特許請求の範囲】
  1. （１）ダイパッドと該ダイパッドと一体的に形成された
    対をなす接地用リードとを具えたリードフレームと、上
    記ダイパッド上に装着されたマイクロ波半導体素子と、
    上記対をなす接地用リード相互間に該接地用リードと一
    定の間隔を保って同一平面内で配置された信号用リード
    とからなり、上記接地用リードと信号用リードとはコプ
    レーナ形高周波伝送線路を構成することを特徴とするマ
    イクロ波半導体装置。
  2. （２）ダイパッドと、該ダイパッド上に装着されたマイ
    クロ波半導体素子と、接地用リードおよび信号用リード
    の上記ダイパッドに近い部分とはパッケージにより覆わ
    れており、上記接地用リードと信号用リードの上記パッ
    ケージから突出する部分は上記パッケージから横方向に
    直線的に伸びていることを特徴とする特許請求の範囲（
    １）記載のマイクロ波半導体装置。
  3. （３）ダイパッドと、該ダイパッド上に装着されたマイ
    クロ波半導体素子と、接地用リードおよび信号用リード
    の上記ダイパッドに近い部分とはパッケージにより覆わ
    れており、上記接地用リードと信号用リードの上記パッ
    ケージから突出する部分は上記パッケージの側面に沿う
    ように折曲げられており、その先端部はさらに上記パッ
    ケージの底部に位置するように折曲げられていることを
    特徴とする特許請求の範囲（１）記載のマイクロ波半導
    体装置。
JP2127677A 1990-05-16 1990-05-16 マイクロ波半導体装置 Pending JPH0425036A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2127677A JPH0425036A (ja) 1990-05-16 1990-05-16 マイクロ波半導体装置
EP90308697A EP0457985A1 (en) 1990-05-16 1990-08-07 Microwave semiconductor device
US07/574,118 US5057805A (en) 1990-05-16 1990-08-29 Microwave semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2127677A JPH0425036A (ja) 1990-05-16 1990-05-16 マイクロ波半導体装置

Publications (1)

Publication Number Publication Date
JPH0425036A true JPH0425036A (ja) 1992-01-28

Family

ID=14965983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2127677A Pending JPH0425036A (ja) 1990-05-16 1990-05-16 マイクロ波半導体装置

Country Status (3)

Country Link
US (1) US5057805A (ja)
EP (1) EP0457985A1 (ja)
JP (1) JPH0425036A (ja)

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Also Published As

Publication number Publication date
US5057805A (en) 1991-10-15
EP0457985A1 (en) 1991-11-27

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