JPH0419701B2 - - Google Patents
Info
- Publication number
- JPH0419701B2 JPH0419701B2 JP17343682A JP17343682A JPH0419701B2 JP H0419701 B2 JPH0419701 B2 JP H0419701B2 JP 17343682 A JP17343682 A JP 17343682A JP 17343682 A JP17343682 A JP 17343682A JP H0419701 B2 JPH0419701 B2 JP H0419701B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- laser beam
- plate
- airflow
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17343682A JPS5961920A (ja) | 1982-10-01 | 1982-10-01 | 薄膜製造方法およびその装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17343682A JPS5961920A (ja) | 1982-10-01 | 1982-10-01 | 薄膜製造方法およびその装置 |
Related Child Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24761283A Division JPS59140368A (ja) | 1983-12-27 | 1983-12-27 | 薄膜製造方法とその装置 |
JP24761183A Division JPS59140367A (ja) | 1983-12-27 | 1983-12-27 | 薄膜製造方法とその装置 |
JP24761383A Division JPS59140369A (ja) | 1983-12-27 | 1983-12-27 | 薄膜製造方法とその装置 |
JP24761083A Division JPS59140366A (ja) | 1983-12-27 | 1983-12-27 | 薄膜製造方法とその装置 |
JP13705689A Division JPH0243366A (ja) | 1989-05-29 | 1989-05-29 | 薄膜製造方法とその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5961920A JPS5961920A (ja) | 1984-04-09 |
JPH0419701B2 true JPH0419701B2 (enrdf_load_stackoverflow) | 1992-03-31 |
Family
ID=15960425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17343682A Granted JPS5961920A (ja) | 1982-10-01 | 1982-10-01 | 薄膜製造方法およびその装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5961920A (enrdf_load_stackoverflow) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59162267A (ja) * | 1983-03-04 | 1984-09-13 | Hitachi Ltd | 蒸着装置及び蒸着方法 |
JPS6192048U (enrdf_load_stackoverflow) * | 1984-11-22 | 1986-06-14 | ||
JPS61131431A (ja) * | 1984-11-29 | 1986-06-19 | Mitsubishi Electric Corp | 半導体製造装置 |
JP2517705B2 (ja) * | 1984-12-29 | 1996-07-24 | ソニー株式会社 | 薄膜の選択的気相成長方法 |
JPH0736395B2 (ja) * | 1985-04-23 | 1995-04-19 | 富士通株式会社 | アルミニウム膜の成長方法 |
JPS61295373A (ja) * | 1985-06-25 | 1986-12-26 | Canon Inc | 光化学気相成長法による堆積膜の形成方法および装置 |
US4694777A (en) * | 1985-07-03 | 1987-09-22 | Roche Gregory A | Apparatus for, and methods of, depositing a substance on a substrate |
JPS62136017A (ja) * | 1985-12-10 | 1987-06-19 | Stanley Electric Co Ltd | レ−ザ−励起cvd法によるアモルフアスシリコンの製造方法 |
JPS62190336U (enrdf_load_stackoverflow) * | 1986-05-26 | 1987-12-03 | ||
RU2469433C1 (ru) * | 2011-07-13 | 2012-12-10 | Юрий Георгиевич Шретер | Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты) |
JP6602332B2 (ja) | 2017-03-28 | 2019-11-06 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
-
1982
- 1982-10-01 JP JP17343682A patent/JPS5961920A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5961920A (ja) | 1984-04-09 |
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