JPH0328017B2 - - Google Patents

Info

Publication number
JPH0328017B2
JPH0328017B2 JP56205016A JP20501681A JPH0328017B2 JP H0328017 B2 JPH0328017 B2 JP H0328017B2 JP 56205016 A JP56205016 A JP 56205016A JP 20501681 A JP20501681 A JP 20501681A JP H0328017 B2 JPH0328017 B2 JP H0328017B2
Authority
JP
Japan
Prior art keywords
ion beam
etching
workpiece
focused ion
processing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56205016A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58106750A (ja
Inventor
Tadahiro Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56205016A priority Critical patent/JPS58106750A/ja
Priority to US06/447,762 priority patent/US4457803A/en
Priority to DE8282306567T priority patent/DE3278895D1/de
Priority to EP82306567A priority patent/EP0082639B1/en
Publication of JPS58106750A publication Critical patent/JPS58106750A/ja
Publication of JPH0328017B2 publication Critical patent/JPH0328017B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/961—Ion beam source and generation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
JP56205016A 1981-12-18 1981-12-18 フオ−カスイオンビ−ム加工方法 Granted JPS58106750A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56205016A JPS58106750A (ja) 1981-12-18 1981-12-18 フオ−カスイオンビ−ム加工方法
US06/447,762 US4457803A (en) 1981-12-18 1982-12-08 Processing method using a focused ion beam
DE8282306567T DE3278895D1 (en) 1981-12-18 1982-12-09 Processing method using a focused ion beam
EP82306567A EP0082639B1 (en) 1981-12-18 1982-12-09 Processing method using a focused ion beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56205016A JPS58106750A (ja) 1981-12-18 1981-12-18 フオ−カスイオンビ−ム加工方法

Publications (2)

Publication Number Publication Date
JPS58106750A JPS58106750A (ja) 1983-06-25
JPH0328017B2 true JPH0328017B2 (OSRAM) 1991-04-17

Family

ID=16500043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56205016A Granted JPS58106750A (ja) 1981-12-18 1981-12-18 フオ−カスイオンビ−ム加工方法

Country Status (4)

Country Link
US (1) US4457803A (OSRAM)
EP (1) EP0082639B1 (OSRAM)
JP (1) JPS58106750A (OSRAM)
DE (1) DE3278895D1 (OSRAM)

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JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
JPS59201441A (ja) * 1983-04-30 1984-11-15 Toshiba Corp 集束イオンビ−ムを用いたヒユ−ズ切断方法
JPS60136315A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd マイクロイオンビ−ム加工方法およびその装置
JPS60143630A (ja) * 1983-12-29 1985-07-29 Fujitsu Ltd イオン注入方法
JPH0770299B2 (ja) * 1984-04-05 1995-07-31 株式会社日立製作所 イオンビーム加工装置および表面加工方法
HU190959B (en) * 1984-04-20 1986-12-28 Gyulai,Jozsef,Hu Method and apparatus for the irradiation of solid materials with ions
US4930439A (en) * 1984-06-26 1990-06-05 Seiko Instruments Inc. Mask-repairing device
DE3672378D1 (de) * 1985-04-23 1990-08-09 Seiko Instr Inc Vorrichtung zur abscheidung eines elektrisch leitenden und/oder nichtleitenden materials auf einem gegenstand.
US4639301B2 (en) * 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing
AT386297B (de) * 1985-09-11 1988-07-25 Ims Ionen Mikrofab Syst Ionenstrahlgeraet und verfahren zur ausfuehrung von aenderungen, insbes. reparaturen an substraten unter verwendung eines ionenstrahlgeraetes
US4698129A (en) * 1986-05-01 1987-10-06 Oregon Graduate Center Focused ion beam micromachining of optical surfaces in materials
JPS63307736A (ja) * 1987-06-10 1988-12-15 Hitachi Ltd イオンビ−ム加工方法
US4835399A (en) * 1986-08-22 1989-05-30 Hitachi, Ltd. Charged particle beam apparatus
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US4740267A (en) * 1987-02-20 1988-04-26 Hughes Aircraft Company Energy intensive surface reactions using a cluster beam
JPH0622195B2 (ja) * 1987-02-26 1994-03-23 東芝機械株式会社 荷電ビ−ム描画装置
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US4877479A (en) * 1987-03-20 1989-10-31 University Of New Mexico Method and apparatus for ion deposition and etching
AT393925B (de) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
US4874460A (en) * 1987-11-16 1989-10-17 Seiko Instruments Inc. Method and apparatus for modifying patterned film
JP2650930B2 (ja) * 1987-11-24 1997-09-10 株式会社日立製作所 超格子構作の素子製作方法
JPH0664338B2 (ja) * 1988-02-02 1994-08-22 三菱電機株式会社 薄膜パターンの修正方法およびその方法によって修正された露光用マスク
US4874947A (en) * 1988-02-26 1989-10-17 Micrion Corporation Focused ion beam imaging and process control
JP2753306B2 (ja) * 1988-03-18 1998-05-20 株式会社日立製作所 イオンビーム加工方法及び集束イオンビーム装置
JP2569139B2 (ja) * 1988-08-24 1997-01-08 株式会社日立製作所 イオンビーム加工方法
US4929839A (en) * 1988-10-11 1990-05-29 Microbeam Inc. Focused ion beam column
JP2779414B2 (ja) * 1988-12-01 1998-07-23 セイコーインスツルメンツ株式会社 ミクロ断面の加工・観察方法
JP2634289B2 (ja) * 1990-04-18 1997-07-23 三菱電機株式会社 位相シフトマスクの修正方法
JPH0463433A (ja) * 1990-07-02 1992-02-28 Mitsubishi Electric Corp 半導体素子の配線装置およびそれを用いた配線方法
JPH088245B2 (ja) * 1990-09-28 1996-01-29 株式会社島津製作所 集束イオンビームエッチング装置
US5140164A (en) * 1991-01-14 1992-08-18 Schlumberger Technologies, Inc. Ic modification with focused ion beam system
US5159170A (en) * 1991-04-26 1992-10-27 International Business Machines Corporation Grid structure for reducing current density in focussed ion beam
JPH0562638A (ja) * 1991-09-04 1993-03-12 Hitachi Ltd 集束イオンビーム装置
US5266529A (en) * 1991-10-21 1993-11-30 Trw Inc. Focused ion beam for thin film resistor trim on aluminum nitride substrates
EP0571727A1 (en) * 1992-04-23 1993-12-01 International Business Machines Corporation Apparatus and method for focussed ion beam deposition by controlling beam parameters
JP2529057B2 (ja) * 1992-06-15 1996-08-28 株式会社日立製作所 マイクロイオンビ―ム加工方法
JP3330998B2 (ja) * 1992-08-21 2002-10-07 三菱電機株式会社 位相シフトマスクのパターン欠陥修正方法
US5462629A (en) * 1992-08-28 1995-10-31 Kawasaki Steel Corp. Surface processing apparatus using neutral beam
US5429730A (en) * 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
JP3153391B2 (ja) * 1993-07-07 2001-04-09 株式会社日立製作所 集束イオンビーム装置
JPH081739A (ja) * 1994-06-24 1996-01-09 Ube Ind Ltd 可塑化装置
US5449916A (en) * 1994-09-09 1995-09-12 Atomic Energy Of Canada Limited Electron radiation dose tailoring by variable beam pulse generation
US5589042A (en) * 1994-11-08 1996-12-31 Hughes Aircraft Company System and method for fabrication of precision optical ramp filters
US5623160A (en) * 1995-09-14 1997-04-22 Liberkowski; Janusz B. Signal-routing or interconnect substrate, structure and apparatus
JPH09283496A (ja) * 1996-04-18 1997-10-31 Hitachi Ltd 荷電粒子ビーム照射によるパターン形成方法及びその装置
US5916424A (en) 1996-04-19 1999-06-29 Micrion Corporation Thin film magnetic recording heads and systems and methods for manufacturing the same
US5601654A (en) * 1996-05-31 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Flow-through ion beam source
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US5882823A (en) * 1997-05-21 1999-03-16 International Business Machines Corporation Fib repair method
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FR2764110B1 (fr) * 1997-05-28 1999-08-20 Univ Paris Curie Dispositif et procede de gravure par ions
US6332962B1 (en) * 1997-06-13 2001-12-25 Micrion Corporation Thin-film magnetic recording head manufacture using selective imaging
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US6888146B1 (en) * 1998-04-10 2005-05-03 The Regents Of The University Of California Maskless micro-ion-beam reduction lithography system
CN1064177C (zh) * 1998-05-13 2001-04-04 中国航天工业总公司第二研究院二十三所 变深度刻蚀方法及其装置
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US7773340B2 (en) 1999-02-23 2010-08-10 Advanced Research Corporation Patterned magnetic recording head having a gap pattern with substantially elliptical or substantially diamond-shaped termination pattern
US6269533B2 (en) * 1999-02-23 2001-08-07 Advanced Research Corporation Method of making a patterned magnetic recording head
US20030093894A1 (en) * 1999-02-23 2003-05-22 Dugas Matthew P. Double layer patterning and technique for making a magnetic recording head
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JP2002141495A (ja) * 2000-11-02 2002-05-17 Takashi Katoda 集束イオンビームを用いて作製した極微細構造を有する電子デバイス及び光デバイス
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JP4312574B2 (ja) * 2003-10-31 2009-08-12 独立行政法人産業技術総合研究所 イオンビーム加工装置およびイオンビーム加工方法
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JP2006120331A (ja) * 2004-10-19 2006-05-11 Jeol Ltd 集束イオンビーム装置および収差補正集束イオンビーム装置
DE102005017632B4 (de) * 2005-04-15 2010-04-08 Leibniz-Institut für Oberflächenmodifizierung e.V. Verfahren zur Modifikation der Oberfläche einer Probe mittels eines gepulsten Ionenstrahls oder mittels eines ionenstrahlgenerierten Teilchenstrahls mit homogen oder gaußförmig verteilter Stromdichte
JP2007209000A (ja) * 2007-02-21 2007-08-16 Infineon Technologies Ag 所定の層の厚さ特性を有する層の製造方法
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US8767331B2 (en) 2009-07-31 2014-07-01 Advanced Research Corporation Erase drive system and methods of erasure for tape data cartridge
JP2011210492A (ja) * 2010-03-29 2011-10-20 Sii Nanotechnology Inc 集束イオンビーム装置
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DE102016119791A1 (de) * 2016-10-18 2018-04-19 scia Systems GmbH Verfahren und Vorrichtung zum Bearbeiten einer Oberfläche eines Substrates mittels eines Teilchenstrahls
JP7551542B2 (ja) * 2021-03-05 2024-09-17 キオクシア株式会社 半導体装置の製造方法

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Also Published As

Publication number Publication date
EP0082639A3 (en) 1984-05-16
US4457803A (en) 1984-07-03
EP0082639B1 (en) 1988-08-10
DE3278895D1 (en) 1988-09-15
JPS58106750A (ja) 1983-06-25
EP0082639A2 (en) 1983-06-29

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