DE3672378D1 - Vorrichtung zur abscheidung eines elektrisch leitenden und/oder nichtleitenden materials auf einem gegenstand. - Google Patents

Vorrichtung zur abscheidung eines elektrisch leitenden und/oder nichtleitenden materials auf einem gegenstand.

Info

Publication number
DE3672378D1
DE3672378D1 DE8686303036T DE3672378T DE3672378D1 DE 3672378 D1 DE3672378 D1 DE 3672378D1 DE 8686303036 T DE8686303036 T DE 8686303036T DE 3672378 T DE3672378 T DE 3672378T DE 3672378 D1 DE3672378 D1 DE 3672378D1
Authority
DE
Germany
Prior art keywords
depositing
conductive material
electrically conductive
conductive
electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686303036T
Other languages
English (en)
Inventor
Tatsuya Adachi
Masahiro Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Science Corp
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26428563&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3672378(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP8727685A external-priority patent/JPS61245164A/ja
Priority claimed from JP60087275A external-priority patent/JPH0715905B2/ja
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Application granted granted Critical
Publication of DE3672378D1 publication Critical patent/DE3672378D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE8686303036T 1985-04-23 1986-04-22 Vorrichtung zur abscheidung eines elektrisch leitenden und/oder nichtleitenden materials auf einem gegenstand. Expired - Lifetime DE3672378D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8727685A JPS61245164A (ja) 1985-04-23 1985-04-23 パタ−ン修正装置
JP60087275A JPH0715905B2 (ja) 1985-04-23 1985-04-23 イオンビーム加工装置

Publications (1)

Publication Number Publication Date
DE3672378D1 true DE3672378D1 (de) 1990-08-09

Family

ID=26428563

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686303036T Expired - Lifetime DE3672378D1 (de) 1985-04-23 1986-04-22 Vorrichtung zur abscheidung eines elektrisch leitenden und/oder nichtleitenden materials auf einem gegenstand.

Country Status (3)

Country Link
US (1) US5086230A (de)
EP (1) EP0199585B1 (de)
DE (1) DE3672378D1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
JPH0763064B2 (ja) * 1986-03-31 1995-07-05 株式会社日立製作所 Ｉｃ素子における配線接続方法
US4844945A (en) * 1988-05-18 1989-07-04 Hewlett-Packard Company Process for producing patterns in dielectric layers formed by plasma enhanced chemical vapor deposition (PECVD)
US4908226A (en) * 1988-05-23 1990-03-13 Hughes Aircraft Company Selective area nucleation and growth method for metal chemical vapor deposition using focused ion beams
JPH02258689A (ja) * 1989-03-31 1990-10-19 Canon Inc 結晶質薄膜の形成方法
JP2708547B2 (ja) * 1989-05-10 1998-02-04 株式会社日立製作所 デバイス移植方法
DE3931565C1 (de) * 1989-09-22 1991-01-24 Dornier Luftfahrt Gmbh, 8000 Muenchen, De
US5135695A (en) * 1989-12-04 1992-08-04 Board Of Regents The University Of Texas System Positioning, focusing and monitoring of gas phase selective beam deposition
US5017317A (en) * 1989-12-04 1991-05-21 Board Of Regents, The Uni. Of Texas System Gas phase selective beam deposition
JP2774884B2 (ja) * 1991-08-22 1998-07-09 株式会社日立製作所 試料の分離方法及びこの分離方法で得た分離試料の分析方法
US5429730A (en) * 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
DE4421517A1 (de) * 1993-06-28 1995-01-05 Schlumberger Technologies Inc Verfahren zum Abtrag oder Auftrag von Material mittels eines Partikelstrahls und Vorrichtung zu seiner Durchführung
JP3041174B2 (ja) * 1993-10-28 2000-05-15 株式会社東芝 電子線描画装置のパターン修正装置におけるパターン修正方法
US5458731A (en) * 1994-02-04 1995-10-17 Fujitsu Limited Method for fast and non-destructive examination of etched features
AU2914095A (en) * 1994-06-28 1996-01-25 Fei Company Charged particle deposition of electrically insulating films
JP3310136B2 (ja) * 1994-09-17 2002-07-29 株式会社東芝 荷電ビーム装置
US5611883A (en) * 1995-01-09 1997-03-18 Board Of Regents, The University Of Texas System Joining ceramics and attaching fasteners to ceramics by gas phase selective beam deposition
US5700526A (en) * 1995-05-04 1997-12-23 Schlumberger Technologies Inc. Insulator deposition using focused ion beam
US5541411A (en) * 1995-07-06 1996-07-30 Fei Company Image-to-image registration focused ion beam system
US5747818A (en) * 1996-10-21 1998-05-05 Schlumberger Technologies Inc. Thermoelectric cooling in gas-assisted FIB system
JP3193678B2 (ja) * 1997-10-20 2001-07-30 株式会社アドバンテスト 半導体ウエハリペア装置及び方法
EP1319733A3 (de) * 1998-02-06 2003-07-23 Richardson Technologies Inc Verfahren und Vorrichtung zum Abscheiden dreidimensionaler Objekte
US6261850B1 (en) 1998-09-03 2001-07-17 Micron Technology, Inc. Direct writing of low carbon conductive material
US6268608B1 (en) * 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
US20060022136A1 (en) * 2004-07-29 2006-02-02 Moore Thomas M Multiple gas injection system for charged particle beam instruments
JP2008311521A (ja) * 2007-06-15 2008-12-25 Aoi Electronics Co Ltd パーティクル除去方法、微小ピンセット装置、原子間力顕微鏡および荷電粒子ビーム装置
CN102246258B (zh) * 2008-10-12 2015-09-02 Fei公司 用于局部区域导航的高精确度射束放置
US8781219B2 (en) 2008-10-12 2014-07-15 Fei Company High accuracy beam placement for local area navigation
EP2612342B1 (de) 2010-08-31 2018-08-22 FEI Company Navigation und probenbearbeitung unter verwendung einer ionenquelle mit sowohl massearmen als auch massereichen spezies

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586133A (ja) * 1981-07-03 1983-01-13 Mitsubishi Electric Corp 微細パタ−ン形成装置
JPS58106750A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法
US4605566A (en) * 1983-08-22 1986-08-12 Nec Corporation Method for forming thin films by absorption

Also Published As

Publication number Publication date
EP0199585B1 (de) 1990-07-04
US5086230A (en) 1992-02-04
EP0199585A3 (en) 1987-07-29
EP0199585A2 (de) 1986-10-29

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: SII NANO TECHNOLOGY INC., CHIBA, JP