JPH0324059B2 - - Google Patents

Info

Publication number
JPH0324059B2
JPH0324059B2 JP56149987A JP14998781A JPH0324059B2 JP H0324059 B2 JPH0324059 B2 JP H0324059B2 JP 56149987 A JP56149987 A JP 56149987A JP 14998781 A JP14998781 A JP 14998781A JP H0324059 B2 JPH0324059 B2 JP H0324059B2
Authority
JP
Japan
Prior art keywords
drain
protective film
source
gate electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56149987A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5851572A (ja
Inventor
Shigeru Okamura
Hidetoshi Nishi
Tsuguo Inada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56149987A priority Critical patent/JPS5851572A/ja
Publication of JPS5851572A publication Critical patent/JPS5851572A/ja
Publication of JPH0324059B2 publication Critical patent/JPH0324059B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP56149987A 1981-09-22 1981-09-22 半導体装置の製造方法 Granted JPS5851572A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56149987A JPS5851572A (ja) 1981-09-22 1981-09-22 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149987A JPS5851572A (ja) 1981-09-22 1981-09-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5851572A JPS5851572A (ja) 1983-03-26
JPH0324059B2 true JPH0324059B2 (en, 2012) 1991-04-02

Family

ID=15486983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56149987A Granted JPS5851572A (ja) 1981-09-22 1981-09-22 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5851572A (en, 2012)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181066A (ja) * 1983-03-31 1984-10-15 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS60136267A (ja) * 1983-12-23 1985-07-19 Fujitsu Ltd 半導体装置の製造方法
JPS6187379A (ja) * 1984-10-04 1986-05-02 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833716B2 (ja) * 1975-12-03 1983-07-21 三洋電機株式会社 シヨツトキ−シヨウヘキガタデンカイコウカトランジスタノ セイゾウホウホウ
DE2631873C2 (de) * 1976-07-15 1986-07-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand
JPS55105380A (en) * 1979-02-07 1980-08-12 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5851572A (ja) 1983-03-26

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