JPS6258154B2 - - Google Patents

Info

Publication number
JPS6258154B2
JPS6258154B2 JP58105299A JP10529983A JPS6258154B2 JP S6258154 B2 JPS6258154 B2 JP S6258154B2 JP 58105299 A JP58105299 A JP 58105299A JP 10529983 A JP10529983 A JP 10529983A JP S6258154 B2 JPS6258154 B2 JP S6258154B2
Authority
JP
Japan
Prior art keywords
film
insulating film
gate electrode
etching
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58105299A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59229875A (ja
Inventor
Toshuki Terada
Nobuyuki Toyoda
Akimichi Hojo
Kyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58105299A priority Critical patent/JPS59229875A/ja
Publication of JPS59229875A publication Critical patent/JPS59229875A/ja
Publication of JPS6258154B2 publication Critical patent/JPS6258154B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58105299A 1983-06-13 1983-06-13 シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法 Granted JPS59229875A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58105299A JPS59229875A (ja) 1983-06-13 1983-06-13 シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58105299A JPS59229875A (ja) 1983-06-13 1983-06-13 シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59229875A JPS59229875A (ja) 1984-12-24
JPS6258154B2 true JPS6258154B2 (en, 2012) 1987-12-04

Family

ID=14403809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58105299A Granted JPS59229875A (ja) 1983-06-13 1983-06-13 シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59229875A (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758716B2 (ja) * 1985-09-10 1995-06-21 松下電器産業株式会社 電界効果トランジスタの製造方法
JPH0758717B2 (ja) * 1985-09-10 1995-06-21 松下電器産業株式会社 電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
JPS59229875A (ja) 1984-12-24

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