JPH0320906B2 - - Google Patents
Info
- Publication number
- JPH0320906B2 JPH0320906B2 JP56060889A JP6088981A JPH0320906B2 JP H0320906 B2 JPH0320906 B2 JP H0320906B2 JP 56060889 A JP56060889 A JP 56060889A JP 6088981 A JP6088981 A JP 6088981A JP H0320906 B2 JPH0320906 B2 JP H0320906B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor
- semiconductor layer
- electrode
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 17
- 239000003990 capacitor Substances 0.000 claims description 15
- 230000005669 field effect Effects 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000015654 memory Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56060889A JPS57176757A (en) | 1981-04-22 | 1981-04-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56060889A JPS57176757A (en) | 1981-04-22 | 1981-04-22 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57176757A JPS57176757A (en) | 1982-10-30 |
| JPH0320906B2 true JPH0320906B2 (ko) | 1991-03-20 |
Family
ID=13155368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56060889A Granted JPS57176757A (en) | 1981-04-22 | 1981-04-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57176757A (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5982761A (ja) * | 1982-11-04 | 1984-05-12 | Hitachi Ltd | 半導体メモリ |
| JPS59138377A (ja) * | 1983-01-28 | 1984-08-08 | Agency Of Ind Science & Technol | Ｍｉｓトランジスタ及びその製造方法 |
| DE10248722A1 (de) * | 2002-10-18 | 2004-05-06 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren |
| DE10248723A1 (de) * | 2002-10-18 | 2004-05-06 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Kondensatoren und mit vorzugsweise planaren Transistoren und Herstellungsverfahren |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5350985A (en) * | 1976-10-20 | 1978-05-09 | Fujitsu Ltd | Semiconductor memory device |
| JPS5519820A (en) * | 1978-07-27 | 1980-02-12 | Nec Corp | Semiconductor device |
| JPS5562763A (en) * | 1978-11-02 | 1980-05-12 | Nec Corp | Semiconductor device |
| JPS56107571A (en) * | 1980-01-30 | 1981-08-26 | Fujitsu Ltd | Semiconductor memory storage device |
-
1981
- 1981-04-22 JP JP56060889A patent/JPS57176757A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5350985A (en) * | 1976-10-20 | 1978-05-09 | Fujitsu Ltd | Semiconductor memory device |
| JPS5519820A (en) * | 1978-07-27 | 1980-02-12 | Nec Corp | Semiconductor device |
| JPS5562763A (en) * | 1978-11-02 | 1980-05-12 | Nec Corp | Semiconductor device |
| JPS56107571A (en) * | 1980-01-30 | 1981-08-26 | Fujitsu Ltd | Semiconductor memory storage device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57176757A (en) | 1982-10-30 |
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