JPH0313757B2 - - Google Patents

Info

Publication number
JPH0313757B2
JPH0313757B2 JP56052663A JP5266381A JPH0313757B2 JP H0313757 B2 JPH0313757 B2 JP H0313757B2 JP 56052663 A JP56052663 A JP 56052663A JP 5266381 A JP5266381 A JP 5266381A JP H0313757 B2 JPH0313757 B2 JP H0313757B2
Authority
JP
Japan
Prior art keywords
base region
region
buried layer
conductivity type
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56052663A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57167675A (en
Inventor
Tsutomu Akashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56052663A priority Critical patent/JPS57167675A/ja
Priority to US06/366,278 priority patent/US4550390A/en
Publication of JPS57167675A publication Critical patent/JPS57167675A/ja
Publication of JPH0313757B2 publication Critical patent/JPH0313757B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10W42/25—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
JP56052663A 1981-04-08 1981-04-08 Semiconductor device Granted JPS57167675A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56052663A JPS57167675A (en) 1981-04-08 1981-04-08 Semiconductor device
US06/366,278 US4550390A (en) 1981-04-08 1982-04-07 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56052663A JPS57167675A (en) 1981-04-08 1981-04-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57167675A JPS57167675A (en) 1982-10-15
JPH0313757B2 true JPH0313757B2 (enExample) 1991-02-25

Family

ID=12921100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56052663A Granted JPS57167675A (en) 1981-04-08 1981-04-08 Semiconductor device

Country Status (2)

Country Link
US (1) US4550390A (enExample)
JP (1) JPS57167675A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143496A (ja) * 1983-12-29 1985-07-29 Fujitsu Ltd 半導体記憶装置
US4669180A (en) * 1984-12-18 1987-06-02 Advanced Micro Devices, Inc. Method of forming emitter coupled logic bipolar memory cell using polysilicon Schottky diodes for coupling
JPS61234068A (ja) * 1985-04-10 1986-10-18 Nec Corp バイポ−ラｒａｍ
JPH0746702B2 (ja) * 1986-08-01 1995-05-17 株式会社日立製作所 半導体記憶装置
US4852060A (en) * 1988-03-31 1989-07-25 International Business Machines Corporation Soft error resistant data storage cells
US6005801A (en) * 1997-08-20 1999-12-21 Micron Technology, Inc. Reduced leakage DRAM storage unit
US9461035B2 (en) 2012-12-28 2016-10-04 Texas Instruments Incorporated High performance isolated vertical bipolar junction transistor and method for forming in a CMOS integrated circuit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909807A (en) * 1974-09-03 1975-09-30 Bell Telephone Labor Inc Integrated circuit memory cell
US4366554A (en) * 1978-10-03 1982-12-28 Tokyo Shibaura Denki Kabushiki Kaisha I2 L Memory device
JPS55158659A (en) * 1979-05-30 1980-12-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory storage
JPS564263A (en) * 1979-06-25 1981-01-17 Hitachi Ltd Semiconductor memory
JPS5842556B2 (ja) * 1979-08-30 1983-09-20 富士通株式会社 半導体記憶装置
JPS5829628B2 (ja) * 1979-11-22 1983-06-23 富士通株式会社 半導体記憶装置

Also Published As

Publication number Publication date
JPS57167675A (en) 1982-10-15
US4550390A (en) 1985-10-29

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