JPS57167675A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57167675A
JPS57167675A JP56052663A JP5266381A JPS57167675A JP S57167675 A JPS57167675 A JP S57167675A JP 56052663 A JP56052663 A JP 56052663A JP 5266381 A JP5266381 A JP 5266381A JP S57167675 A JPS57167675 A JP S57167675A
Authority
JP
Japan
Prior art keywords
region
collector
layer
transistor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56052663A
Other languages
English (en)
Other versions
JPH0313757B2 (ja
Inventor
Tsutomu Akashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56052663A priority Critical patent/JPS57167675A/ja
Priority to US06/366,278 priority patent/US4550390A/en
Publication of JPS57167675A publication Critical patent/JPS57167675A/ja
Publication of JPH0313757B2 publication Critical patent/JPH0313757B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
JP56052663A 1981-04-08 1981-04-08 Semiconductor device Granted JPS57167675A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56052663A JPS57167675A (en) 1981-04-08 1981-04-08 Semiconductor device
US06/366,278 US4550390A (en) 1981-04-08 1982-04-07 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56052663A JPS57167675A (en) 1981-04-08 1981-04-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57167675A true JPS57167675A (en) 1982-10-15
JPH0313757B2 JPH0313757B2 (ja) 1991-02-25

Family

ID=12921100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56052663A Granted JPS57167675A (en) 1981-04-08 1981-04-08 Semiconductor device

Country Status (2)

Country Link
US (1) US4550390A (ja)
JP (1) JPS57167675A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0149401A2 (en) * 1983-12-29 1985-07-24 Fujitsu Limited Semiconductor memory device
JPS61234068A (ja) * 1985-04-10 1986-10-18 Nec Corp バイポ−ラｒａｍ

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4669180A (en) * 1984-12-18 1987-06-02 Advanced Micro Devices, Inc. Method of forming emitter coupled logic bipolar memory cell using polysilicon Schottky diodes for coupling
JPH0746702B2 (ja) * 1986-08-01 1995-05-17 株式会社日立製作所 半導体記憶装置
US4852060A (en) * 1988-03-31 1989-07-25 International Business Machines Corporation Soft error resistant data storage cells
US6005801A (en) * 1997-08-20 1999-12-21 Micron Technology, Inc. Reduced leakage DRAM storage unit
US9461035B2 (en) * 2012-12-28 2016-10-04 Texas Instruments Incorporated High performance isolated vertical bipolar junction transistor and method for forming in a CMOS integrated circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5152247A (ja) * 1974-09-03 1976-05-08 Western Electric Co
JPS55158659A (en) * 1979-05-30 1980-12-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory storage
JPS564263A (en) * 1979-06-25 1981-01-17 Hitachi Ltd Semiconductor memory
JPS5674959A (en) * 1979-11-22 1981-06-20 Fujitsu Ltd Semiconductor memroy

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2967103D1 (en) * 1978-10-03 1984-08-16 Tokyo Shibaura Electric Co Semiconductor memory device
JPS5842556B2 (ja) * 1979-08-30 1983-09-20 富士通株式会社 半導体記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5152247A (ja) * 1974-09-03 1976-05-08 Western Electric Co
JPS55158659A (en) * 1979-05-30 1980-12-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory storage
JPS564263A (en) * 1979-06-25 1981-01-17 Hitachi Ltd Semiconductor memory
JPS5674959A (en) * 1979-11-22 1981-06-20 Fujitsu Ltd Semiconductor memroy

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0149401A2 (en) * 1983-12-29 1985-07-24 Fujitsu Limited Semiconductor memory device
EP0149401A3 (en) * 1983-12-29 1988-03-16 Fujitsu Limited Semiconductor memory device
JPS61234068A (ja) * 1985-04-10 1986-10-18 Nec Corp バイポ−ラｒａｍ

Also Published As

Publication number Publication date
US4550390A (en) 1985-10-29
JPH0313757B2 (ja) 1991-02-25

Similar Documents

Publication Publication Date Title
JPS564263A (en) Semiconductor memory
GB1533721A (en) Semiconductor data storage devices
JPS56100463A (en) Semiconductor memory device
JPS5586151A (en) Manufacture of semiconductor integrated circuit
JPS57167675A (en) Semiconductor device
US4003076A (en) Single bipolar transistor memory cell and method
KR890003217B1 (ko) 디램 쎌의 제조방법
JPS5559759A (en) Semiconductor device
JPS5683046A (en) Manufacture of integrated circuit
US3953866A (en) Cross coupled semiconductor memory cell
JPS57162365A (en) Semiconductor device
JPS57118669A (en) Multiemitter type npn transistor
JPS6325715B2 (ja)
JPS55115340A (en) Semiconductor device
JPS57162360A (en) Complementary insulated gate field effect semiconductor device
JPS54154966A (en) Semiconductor electron device
JPS57196563A (en) Semiconductor device
JPS55132062A (en) Semiconductor memory device
JPS5749249A (en) Semiconductor integrated circuit device
JPS55118665A (en) Semiconductor device
JPS55128862A (en) Junction breakdown write-in type semiconductor memory device and method of fabricating the same
JPS5555568A (en) Method of fabricating mos semiconductor device
JPS5734357A (en) Semiconductor integrated circuit
JPS5787170A (en) Semiconductor device
JPS57199251A (en) Semiconductor device