JPH0260216B2 - - Google Patents

Info

Publication number
JPH0260216B2
JPH0260216B2 JP15916986A JP15916986A JPH0260216B2 JP H0260216 B2 JPH0260216 B2 JP H0260216B2 JP 15916986 A JP15916986 A JP 15916986A JP 15916986 A JP15916986 A JP 15916986A JP H0260216 B2 JPH0260216 B2 JP H0260216B2
Authority
JP
Japan
Prior art keywords
resist
recess
gate
pattern
pattern corresponding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15916986A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6315475A (ja
Inventor
Kinshiro Kosemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15916986A priority Critical patent/JPS6315475A/ja
Publication of JPS6315475A publication Critical patent/JPS6315475A/ja
Publication of JPH0260216B2 publication Critical patent/JPH0260216B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP15916986A 1986-07-07 1986-07-07 電界効果型半導体装置の製造方法 Granted JPS6315475A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15916986A JPS6315475A (ja) 1986-07-07 1986-07-07 電界効果型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15916986A JPS6315475A (ja) 1986-07-07 1986-07-07 電界効果型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6315475A JPS6315475A (ja) 1988-01-22
JPH0260216B2 true JPH0260216B2 (en, 2012) 1990-12-14

Family

ID=15687786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15916986A Granted JPS6315475A (ja) 1986-07-07 1986-07-07 電界効果型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6315475A (en, 2012)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666282B2 (ja) * 1988-12-20 1994-08-24 日本電気株式会社 微細電極の形成法
JPH04167439A (ja) * 1990-10-30 1992-06-15 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0661266A (ja) * 1992-08-06 1994-03-04 Mitsubishi Electric Corp 半導体装置とその製造方法
KR970000538B1 (ko) * 1993-04-27 1997-01-13 엘지전자 주식회사 게이트 리세스 구조를 갖는 전계효과트랜지스터의 제조방법
JP3534624B2 (ja) 1998-05-01 2004-06-07 沖電気工業株式会社 半導体装置の製造方法
KR101736914B1 (ko) 2010-12-06 2017-05-19 한국전자통신연구원 고주파 소자 구조물의 제조방법
KR101848244B1 (ko) 2011-12-13 2018-05-29 한국전자통신연구원 계단형 게이트 전극을 포함하는 반도체 소자 및 그 제조 방법
KR101903509B1 (ko) 2012-07-11 2018-10-05 한국전자통신연구원 전계효과형 화합물반도체소자의 제조방법
KR101736277B1 (ko) 2012-12-12 2017-05-17 한국전자통신연구원 전계 효과 트랜지스터 및 그 제조 방법

Also Published As

Publication number Publication date
JPS6315475A (ja) 1988-01-22

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Legal Events

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EXPY Cancellation because of completion of term