JPH0472381B2 - - Google Patents

Info

Publication number
JPH0472381B2
JPH0472381B2 JP57226602A JP22660282A JPH0472381B2 JP H0472381 B2 JPH0472381 B2 JP H0472381B2 JP 57226602 A JP57226602 A JP 57226602A JP 22660282 A JP22660282 A JP 22660282A JP H0472381 B2 JPH0472381 B2 JP H0472381B2
Authority
JP
Japan
Prior art keywords
recess
gate electrode
insulating film
layer
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57226602A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59119765A (ja
Inventor
Kinshiro Kosemura
Yoshimi Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57226602A priority Critical patent/JPS59119765A/ja
Publication of JPS59119765A publication Critical patent/JPS59119765A/ja
Publication of JPH0472381B2 publication Critical patent/JPH0472381B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57226602A 1982-12-27 1982-12-27 電界効果型半導体装置の製造方法 Granted JPS59119765A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57226602A JPS59119765A (ja) 1982-12-27 1982-12-27 電界効果型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57226602A JPS59119765A (ja) 1982-12-27 1982-12-27 電界効果型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59119765A JPS59119765A (ja) 1984-07-11
JPH0472381B2 true JPH0472381B2 (en, 2012) 1992-11-18

Family

ID=16847763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57226602A Granted JPS59119765A (ja) 1982-12-27 1982-12-27 電界効果型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59119765A (en, 2012)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4700462A (en) * 1986-10-08 1987-10-20 Hughes Aircraft Company Process for making a T-gated transistor
JPH01274477A (ja) * 1988-04-26 1989-11-02 Fujitsu Ltd 半導体装置の製造方法
JPH0265141A (ja) * 1988-08-30 1990-03-05 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2550412B2 (ja) * 1989-05-15 1996-11-06 ローム株式会社 電界効果トランジスタの製造方法
JP2667250B2 (ja) * 1989-06-15 1997-10-27 松下電子工業株式会社 半導体装置の製造方法
KR920007357B1 (ko) * 1990-03-12 1992-08-31 재단법인 한국전자통신연구소 내열성 게이트를 이용한 갈륨비소 반도체 소자의 제조방법
JP2655488B2 (ja) * 1994-09-29 1997-09-17 日本電気株式会社 半導体装置の製造方法
JP4752163B2 (ja) * 2001-09-21 2011-08-17 日立電線株式会社 電界効果トランジスタの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58194373A (ja) * 1982-05-10 1983-11-12 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS59119765A (ja) 1984-07-11

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