JPH0233146B2 - - Google Patents

Info

Publication number
JPH0233146B2
JPH0233146B2 JP57101085A JP10108582A JPH0233146B2 JP H0233146 B2 JPH0233146 B2 JP H0233146B2 JP 57101085 A JP57101085 A JP 57101085A JP 10108582 A JP10108582 A JP 10108582A JP H0233146 B2 JPH0233146 B2 JP H0233146B2
Authority
JP
Japan
Prior art keywords
layer
atomic
sin
substrate
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57101085A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58217938A (ja
Inventor
Masatoshi Matsuzaki
Toshiki Yamazaki
Hiroyuki Nomori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP57101085A priority Critical patent/JPS58217938A/ja
Priority to US06/500,625 priority patent/US4518670A/en
Priority to DE19833321135 priority patent/DE3321135A1/de
Publication of JPS58217938A publication Critical patent/JPS58217938A/ja
Publication of JPH0233146B2 publication Critical patent/JPH0233146B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
JP57101085A 1982-06-12 1982-06-12 電子写真感光体 Granted JPS58217938A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57101085A JPS58217938A (ja) 1982-06-12 1982-06-12 電子写真感光体
US06/500,625 US4518670A (en) 1982-06-12 1983-06-03 Recording material for electrophotography comprising amorphous silicon containing nitrogen
DE19833321135 DE3321135A1 (de) 1982-06-12 1983-06-10 Elektrostatographisches aufzeichnungsmaterial

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57101085A JPS58217938A (ja) 1982-06-12 1982-06-12 電子写真感光体

Publications (2)

Publication Number Publication Date
JPS58217938A JPS58217938A (ja) 1983-12-19
JPH0233146B2 true JPH0233146B2 (enExample) 1990-07-25

Family

ID=14291255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57101085A Granted JPS58217938A (ja) 1982-06-12 1982-06-12 電子写真感光体

Country Status (3)

Country Link
US (1) US4518670A (enExample)
JP (1) JPS58217938A (enExample)
DE (1) DE3321135A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3272901D1 (en) * 1981-09-22 1986-10-02 Hitachi Ltd Electrophotographic plate
JPH0680463B2 (ja) * 1983-12-28 1994-10-12 株式会社リコー 電子写真感光体
US4666803A (en) * 1984-11-26 1987-05-19 Kabushiki Kaisha Toshiba Photoconductive member for exhibiting photoconductivity upon illumination by electromagnetic light in the visible to ultraviolet range
JPS61130953A (ja) * 1984-11-30 1986-06-18 Toshiba Corp 光導電部材
EP0194329B1 (en) * 1985-03-13 1989-07-12 Kanegafuchi Chemical Industry Co., Ltd. Multilayer photoconductive material
US4741982A (en) * 1985-09-13 1988-05-03 Minolta Camera Kabushiki Kaisha Photosensitive member having undercoat layer of amorphous carbon
US4738912A (en) * 1985-09-13 1988-04-19 Minolta Camera Kabushiki Kaisha Photosensitive member having an amorphous carbon transport layer
US5166018A (en) * 1985-09-13 1992-11-24 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4749636A (en) * 1985-09-13 1988-06-07 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4743522A (en) * 1985-09-13 1988-05-10 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4666806A (en) * 1985-09-30 1987-05-19 Xerox Corporation Overcoated amorphous silicon imaging members
FR2590077A1 (fr) * 1985-11-11 1987-05-15 Sharp Kk Procede de fabrication d'un element photoconducteur
JPS62220961A (ja) * 1986-03-20 1987-09-29 Minolta Camera Co Ltd 感光体
EP0238095A1 (en) * 1986-03-20 1987-09-23 Minolta Camera Kabushiki Kaisha Photosensitive member composed of charge transporting layer and charge generating layer
JPS62220959A (ja) * 1986-03-20 1987-09-29 Minolta Camera Co Ltd 感光体
EP0241032A3 (en) * 1986-04-09 1989-11-23 Minolta Camera Kabushiki Kaisha Photosensitive member composed of charge transporting layer and charge generating layer
JPS62289848A (ja) * 1986-06-10 1987-12-16 Minolta Camera Co Ltd 感光体
US4737429A (en) * 1986-06-26 1988-04-12 Xerox Corporation Layered amorphous silicon imaging members
US4863821A (en) * 1986-07-07 1989-09-05 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer having amorphous carbon
US4810606A (en) * 1986-07-07 1989-03-07 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
EP0261653A3 (en) * 1986-09-26 1989-11-23 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
EP0262570A3 (en) * 1986-09-26 1989-11-23 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4760005A (en) * 1986-11-03 1988-07-26 Xerox Corporation Amorphous silicon imaging members with barrier layers
US4770963A (en) * 1987-01-30 1988-09-13 Xerox Corporation Humidity insensitive photoresponsive imaging members
US5000831A (en) * 1987-03-09 1991-03-19 Minolta Camera Kabushiki Kaisha Method of production of amorphous hydrogenated carbon layer
US4855201A (en) * 1988-05-02 1989-08-08 Xerox Corporation Photoconductive imaging members with electron transporting polysilylenes
JPH07117761B2 (ja) * 1988-08-17 1995-12-18 富士ゼロックス株式会社 電子写真感光体
JPH02124578A (ja) * 1988-10-11 1990-05-11 Fuji Xerox Co Ltd 電子写真感光体
TW332320B (en) * 1997-01-03 1998-05-21 Nat Science Council A low temperature deposited hydrogenated amorphous silicon nitride and amorphous silicon hydrogen composite passivation layer, the deposition method and the semiconductor
WO2010150442A1 (ja) * 2009-06-24 2010-12-29 パナソニック株式会社 半導体装置及びその製造方法
TWI684031B (zh) 2012-07-16 2020-02-01 美商唯亞威方案公司 光學濾波器及感測器系統
EP4414756A3 (en) 2015-02-18 2024-10-30 Materion Corporation Near infrared optical interference filters with improved transmission

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394425A (en) * 1980-09-12 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(C) barrier layer
US4394426A (en) * 1980-09-25 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(N) barrier layer

Also Published As

Publication number Publication date
JPS58217938A (ja) 1983-12-19
DE3321135C2 (enExample) 1990-10-18
US4518670A (en) 1985-05-21
DE3321135A1 (de) 1983-12-15

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