JPH02257618A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH02257618A
JPH02257618A JP1079254A JP7925489A JPH02257618A JP H02257618 A JPH02257618 A JP H02257618A JP 1079254 A JP1079254 A JP 1079254A JP 7925489 A JP7925489 A JP 7925489A JP H02257618 A JPH02257618 A JP H02257618A
Authority
JP
Japan
Prior art keywords
gate electrode
semiconductor device
insulating film
stress
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1079254A
Other languages
English (en)
Japanese (ja)
Inventor
Yasutaka Kono
河野　康孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1079254A priority Critical patent/JPH02257618A/ja
Priority to GB8926740A priority patent/GB2230898B/en
Priority to FR8916810A priority patent/FR2645347A1/fr
Publication of JPH02257618A publication Critical patent/JPH02257618A/ja
Priority to US07/625,798 priority patent/US5341015A/en
Priority to US08/262,842 priority patent/US5448096A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0616—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made before the completion of the source and drain regions, e.g. gate-first processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP1079254A 1989-03-29 1989-03-29 半導体装置及びその製造方法 Pending JPH02257618A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1079254A JPH02257618A (ja) 1989-03-29 1989-03-29 半導体装置及びその製造方法
GB8926740A GB2230898B (en) 1989-03-29 1989-11-27 A semiconductor device and a production method thereof
FR8916810A FR2645347A1 (fr) 1989-03-29 1989-12-19 Dispositif a semi-conducteurs comportant une electrode de grille recouverte par une couche d'isolation et procedes de fabrication de ceux-ci
US07/625,798 US5341015A (en) 1989-03-29 1990-12-11 Semiconductor device with reduced stress on gate electrode
US08/262,842 US5448096A (en) 1989-03-29 1994-06-21 Semiconductor device with reduced stress applied to gate electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1079254A JPH02257618A (ja) 1989-03-29 1989-03-29 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
JPH02257618A true JPH02257618A (ja) 1990-10-18

Family

ID=13684718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1079254A Pending JPH02257618A (ja) 1989-03-29 1989-03-29 半導体装置及びその製造方法

Country Status (4)

Country Link
US (2) US5341015A (enExample)
JP (1) JPH02257618A (enExample)
FR (1) FR2645347A1 (enExample)
GB (1) GB2230898B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686325A (en) * 1994-11-30 1997-11-11 Fujitsu Limited Method for forming MESFET having T-shaped gate electrode
US5698888A (en) * 1995-04-24 1997-12-16 Nec Corporation Compound semiconductor field effect transistor free from piezoelectric effects regardless of orientation of gate electrode
US6075262A (en) * 1995-09-21 2000-06-13 Fujitsu Limited Semiconductor device having T-shaped gate electrode
US6403240B1 (en) 1996-05-20 2002-06-11 Hitachi, Ltd. Magnetic recording media and magnetic recording system using the same

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU4290396A (en) 1994-11-30 1996-06-19 Micron Technology, Inc. A method of depositing tungsten nitride using a source gas comprising silicon
JP3586031B2 (ja) * 1996-03-27 2004-11-10 株式会社東芝 サセプタおよび熱処理装置および熱処理方法
TW564471B (en) 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP2003109773A (ja) * 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP5057619B2 (ja) * 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW554398B (en) * 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
US7351300B2 (en) 2001-08-22 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
TW594947B (en) 2001-10-30 2004-06-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI264121B (en) 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
WO2004040648A1 (ja) * 2002-10-30 2004-05-13 Semiconductor Energy Laboratory Co., Ltd. 半導体装置および半導体装置の作製方法
US7241666B2 (en) * 2003-10-28 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI406688B (zh) * 2004-02-26 2013-09-01 Semiconductor Energy Lab 運動器具，娛樂工具，和訓練工具
US7719089B2 (en) * 2006-05-05 2010-05-18 Sony Corporation MOSFET having a channel region with enhanced flexure-induced stress
KR102309244B1 (ko) 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN105793957B (zh) 2013-12-12 2019-05-03 株式会社半导体能源研究所 剥离方法及剥离装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195573A (ja) * 1984-10-16 1986-05-14 Nec Corp ゲ−ト電極薄膜形成法
JPS63240074A (ja) * 1987-03-27 1988-10-05 Nec Corp 半導体装置
JPS63248179A (ja) * 1987-04-02 1988-10-14 Nec Corp 半導体装置
JPS63248436A (ja) * 1987-04-02 1988-10-14 Minoru Sano 脱臭材
JPS63248136A (ja) * 1987-04-02 1988-10-14 Nec Corp 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3856647A (en) * 1973-05-15 1974-12-24 Ibm Multi-layer control or stress in thin films
EP0112657B1 (en) * 1982-11-29 1990-06-20 Fujitsu Limited Field effect transistor and process for fabricating it
DE3581159D1 (de) * 1984-10-08 1991-02-07 Fujitsu Ltd Halbleiteranordnung mit integrierter schaltung.
US4777517A (en) * 1984-11-29 1988-10-11 Fujitsu Limited Compound semiconductor integrated circuit device
JPS61183961A (ja) * 1985-02-12 1986-08-16 Nec Corp 電極の製造方法
JP2562840B2 (ja) * 1988-08-01 1996-12-11 富士通株式会社 電界効果トランジスタ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195573A (ja) * 1984-10-16 1986-05-14 Nec Corp ゲ−ト電極薄膜形成法
JPS63240074A (ja) * 1987-03-27 1988-10-05 Nec Corp 半導体装置
JPS63248179A (ja) * 1987-04-02 1988-10-14 Nec Corp 半導体装置
JPS63248436A (ja) * 1987-04-02 1988-10-14 Minoru Sano 脱臭材
JPS63248136A (ja) * 1987-04-02 1988-10-14 Nec Corp 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686325A (en) * 1994-11-30 1997-11-11 Fujitsu Limited Method for forming MESFET having T-shaped gate electrode
US5698888A (en) * 1995-04-24 1997-12-16 Nec Corporation Compound semiconductor field effect transistor free from piezoelectric effects regardless of orientation of gate electrode
US6075262A (en) * 1995-09-21 2000-06-13 Fujitsu Limited Semiconductor device having T-shaped gate electrode
US6403240B1 (en) 1996-05-20 2002-06-11 Hitachi, Ltd. Magnetic recording media and magnetic recording system using the same

Also Published As

Publication number Publication date
US5341015A (en) 1994-08-23
GB2230898A (en) 1990-10-31
GB2230898B (en) 1993-03-17
FR2645347B1 (enExample) 1995-03-10
FR2645347A1 (fr) 1990-10-05
GB8926740D0 (en) 1990-01-17
US5448096A (en) 1995-09-05

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