JPH02239195A - 半絶縁性３―５族化合物半導体単結晶の製造方法 - Google Patents

半絶縁性３―５族化合物半導体単結晶の製造方法

Info

Publication number
JPH02239195A
JPH02239195A JP5824889A JP5824889A JPH02239195A JP H02239195 A JPH02239195 A JP H02239195A JP 5824889 A JP5824889 A JP 5824889A JP 5824889 A JP5824889 A JP 5824889A JP H02239195 A JPH02239195 A JP H02239195A
Authority
JP
Japan
Prior art keywords
single crystal
compound semiconductor
semi
insulating
semiconductor single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5824889A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0543679B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Takashi Kaishiyou
甲斐荘　敬司
Haruto Shimakura
島倉　春人
Osamu Oda
修 小田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP5824889A priority Critical patent/JPH02239195A/ja
Publication of JPH02239195A publication Critical patent/JPH02239195A/ja
Publication of JPH0543679B2 publication Critical patent/JPH0543679B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP5824889A 1989-03-09 1989-03-09 半絶縁性３―５族化合物半導体単結晶の製造方法 Granted JPH02239195A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5824889A JPH02239195A (ja) 1989-03-09 1989-03-09 半絶縁性３―５族化合物半導体単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5824889A JPH02239195A (ja) 1989-03-09 1989-03-09 半絶縁性３―５族化合物半導体単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPH02239195A true JPH02239195A (ja) 1990-09-21
JPH0543679B2 JPH0543679B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-07-02

Family

ID=13078823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5824889A Granted JPH02239195A (ja) 1989-03-09 1989-03-09 半絶縁性３―５族化合物半導体単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPH02239195A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03279299A (ja) * 1990-03-02 1991-12-10 Nikko Kyodo Co Ltd 半絶縁性ＩｎＰ単結晶基板の製造方法
JPH0492899A (ja) * 1990-08-03 1992-03-25 Nikko Kyodo Co Ltd 半絶縁性ＩｎＰ単結晶基板の製造方法
JP2008201672A (ja) * 2003-03-13 2008-09-04 Sumitomo Electric Ind Ltd ＩｎＰ基板及びその製造方法
JP2011148693A (ja) * 2011-03-03 2011-08-04 Sumitomo Electric Ind Ltd 化合物半導体単結晶基板
JP2011148694A (ja) * 2011-03-03 2011-08-04 Sumitomo Electric Ind Ltd 化合物半導体単結晶基板

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102570A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-04-04 1973-12-22
JPH0269307A (ja) * 1988-09-02 1990-03-08 Nippon Mining Co Ltd リン化インジウムおよびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102570A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-04-04 1973-12-22
JPH0269307A (ja) * 1988-09-02 1990-03-08 Nippon Mining Co Ltd リン化インジウムおよびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03279299A (ja) * 1990-03-02 1991-12-10 Nikko Kyodo Co Ltd 半絶縁性ＩｎＰ単結晶基板の製造方法
JPH0492899A (ja) * 1990-08-03 1992-03-25 Nikko Kyodo Co Ltd 半絶縁性ＩｎＰ単結晶基板の製造方法
JP2008201672A (ja) * 2003-03-13 2008-09-04 Sumitomo Electric Ind Ltd ＩｎＰ基板及びその製造方法
JP2011148693A (ja) * 2011-03-03 2011-08-04 Sumitomo Electric Ind Ltd 化合物半導体単結晶基板
JP2011148694A (ja) * 2011-03-03 2011-08-04 Sumitomo Electric Ind Ltd 化合物半導体単結晶基板

Also Published As

Publication number Publication date
JPH0543679B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-07-02

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