JP2008201672A - InP基板及びその製造方法 - Google Patents
InP基板及びその製造方法 Download PDFInfo
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- JP2008201672A JP2008201672A JP2008110459A JP2008110459A JP2008201672A JP 2008201672 A JP2008201672 A JP 2008201672A JP 2008110459 A JP2008110459 A JP 2008110459A JP 2008110459 A JP2008110459 A JP 2008110459A JP 2008201672 A JP2008201672 A JP 2008201672A
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- inp
- inp substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000007789 sealing Methods 0.000 claims abstract description 24
- 239000000565 sealant Substances 0.000 claims abstract description 22
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract description 18
- 239000003795 chemical substances by application Substances 0.000 claims description 19
- 238000002835 absorbance Methods 0.000 claims description 9
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 abstract description 15
- 238000001556 precipitation Methods 0.000 abstract description 15
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 13
- 239000013078 crystal Substances 0.000 description 22
- 239000007788 liquid Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000007847 structural defect Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000012844 infrared spectroscopy analysis Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- MOWNZPNSYMGTMD-UHFFFAOYSA-N oxidoboron Chemical class O=[B] MOWNZPNSYMGTMD-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】本発明に係るInP基板の製造方法は、FeドープしたInP融液22を封止剤26で封止しつつInPインゴットをVB法により作製して、InP基板を作製するInP基板の製造方法であって、封止剤26として、含有水分が200重量ppm以下の酸化ホウ素(B2O3)を用いることを特徴とする。このInP基板の製造方法においては、含有水分量を200重量ppm以下にして、In空孔を占有するH原子の数を低減している。そのため、InP基板にドープされたFeの原子が、In原子に置換されやすくなるため、Feの析出が抑制される。
【選択図】図1
Description
C=kCo(1−g)k-1
ここで、kは偏析係数、CoはInP原料融液中のFeの初期濃度、gは固化率であり、gは成長開始時においては0で、成長終了時に1となる。
Claims (6)
- FeドープしたInP融液を封止剤で封止しつつInPインゴットをVB法により作製してInP基板を作製するInP基板の製造方法であって、
前記封止剤として、含有水分が200重量ppm以下の酸化ホウ素を用いる、InP基板の製造方法。 - 前記酸化ホウ素の含有水分が100重量ppm以下である、請求項1に記載のInP基板の製造方法。
- 熱分解窒化ホウ素製の容器を用い、この容器に前記InPインゴットとなるべきInP融液及び前記封止剤を収容して、前記InPインゴットを作製する、請求項1又は2に記載のInP基板の製造方法。
- 前記InPインゴットのFe濃度が、前記InPインゴットの肩部において1E16atoms/cm3未満である、請求項1〜3のいずれか一項に記載のInP基板の製造方法。
- 請求項1〜4のいずれか一項に記載のInP基板の製造方法によって作製されたInP基板。
- 波数が2316cm-1のときの吸収ピークを吸光度で示した場合に、この吸光度が0.1未満であり、かつ1E7Ωcm以上の比抵抗を有するInP基板。
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JP2008110459A JP5088219B2 (ja) | 2003-03-13 | 2008-04-21 | InP基板及びその製造方法 |
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JP2008110459A JP5088219B2 (ja) | 2003-03-13 | 2008-04-21 | InP基板及びその製造方法 |
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JP2004071392A Division JP4306500B2 (ja) | 2003-03-13 | 2004-03-12 | InP基板及びその製造方法 |
Publications (3)
Publication Number | Publication Date |
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JP2008201672A true JP2008201672A (ja) | 2008-09-04 |
JP2008201672A5 JP2008201672A5 (ja) | 2008-11-20 |
JP5088219B2 JP5088219B2 (ja) | 2012-12-05 |
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JP2008110459A Expired - Fee Related JP5088219B2 (ja) | 2003-03-13 | 2008-04-21 | InP基板及びその製造方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02239195A (ja) * | 1989-03-09 | 1990-09-21 | Nippon Mining Co Ltd | 半絶縁性3―5族化合物半導体単結晶の製造方法 |
JPH03103394A (ja) * | 1989-09-18 | 1991-04-30 | Nippon Mining Co Ltd | 半絶縁性InP単結晶の製造方法 |
JPH0632699A (ja) * | 1992-07-14 | 1994-02-08 | Japan Energy Corp | 半絶縁性InP単結晶の製造方法 |
JPH11189499A (ja) * | 1997-12-25 | 1999-07-13 | Japan Energy Corp | 化合物半導体単結晶の製造方法 |
JP2000313699A (ja) * | 1999-04-27 | 2000-11-14 | Japan Energy Corp | 半絶縁性InP単結晶の製造方法 |
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2008
- 2008-04-21 JP JP2008110459A patent/JP5088219B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02239195A (ja) * | 1989-03-09 | 1990-09-21 | Nippon Mining Co Ltd | 半絶縁性3―5族化合物半導体単結晶の製造方法 |
JPH03103394A (ja) * | 1989-09-18 | 1991-04-30 | Nippon Mining Co Ltd | 半絶縁性InP単結晶の製造方法 |
JPH0632699A (ja) * | 1992-07-14 | 1994-02-08 | Japan Energy Corp | 半絶縁性InP単結晶の製造方法 |
JPH11189499A (ja) * | 1997-12-25 | 1999-07-13 | Japan Energy Corp | 化合物半導体単結晶の製造方法 |
JP2000313699A (ja) * | 1999-04-27 | 2000-11-14 | Japan Energy Corp | 半絶縁性InP単結晶の製造方法 |
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