JPS48102570A - - Google Patents

Info

Publication number
JPS48102570A
JPS48102570A JP3364872A JP3364872A JPS48102570A JP S48102570 A JPS48102570 A JP S48102570A JP 3364872 A JP3364872 A JP 3364872A JP 3364872 A JP3364872 A JP 3364872A JP S48102570 A JPS48102570 A JP S48102570A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3364872A
Other languages
Japanese (ja)
Other versions
JPS5346070B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3364872A priority Critical patent/JPS5346070B2/ja
Publication of JPS48102570A publication Critical patent/JPS48102570A/ja
Publication of JPS5346070B2 publication Critical patent/JPS5346070B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP3364872A 1972-04-04 1972-04-04 Expired JPS5346070B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3364872A JPS5346070B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-04-04 1972-04-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3364872A JPS5346070B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-04-04 1972-04-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP54135275A Division JPS5929558B2 (ja) 1979-10-22 1979-10-22 半絶縁性砒化ガリウム結晶

Publications (2)

Publication Number Publication Date
JPS48102570A true JPS48102570A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-12-22
JPS5346070B2 JPS5346070B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-12-11

Family

ID=12392255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3364872A Expired JPS5346070B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-04-04 1972-04-04

Country Status (1)

Country Link
JP (1) JPS5346070B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117300A (en) * 1976-03-29 1977-10-01 Sumitomo Electric Ind Ltd Semi-insulating single crystal of the group iii-v compounds
JPS5363310A (en) * 1976-11-19 1978-06-06 Kyowa Gas Chem Ind Co Ltd Preparation of monomer composition containing pb and preparation of polymerhaving radiation shielding ability
US4158851A (en) * 1976-03-29 1979-06-19 Sumitomo Electric Industries, Ltd. Semi-insulating gallium arsenide single crystal
JPS55113699A (en) * 1979-10-22 1980-09-02 Sumitomo Electric Ind Ltd Semi-insulating gallium arsenide crystal
JPS5732643A (en) * 1980-08-06 1982-02-22 Toshiba Corp Annealing method of compound semiconductor single crystal
JPH02239195A (ja) * 1989-03-09 1990-09-21 Nippon Mining Co Ltd 半絶縁性3―5族化合物半導体単結晶の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6093882U (ja) * 1983-12-02 1985-06-26 東辰機設株式会社 冷蔵庫

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117300A (en) * 1976-03-29 1977-10-01 Sumitomo Electric Ind Ltd Semi-insulating single crystal of the group iii-v compounds
US4158851A (en) * 1976-03-29 1979-06-19 Sumitomo Electric Industries, Ltd. Semi-insulating gallium arsenide single crystal
JPS5363310A (en) * 1976-11-19 1978-06-06 Kyowa Gas Chem Ind Co Ltd Preparation of monomer composition containing pb and preparation of polymerhaving radiation shielding ability
JPS55113699A (en) * 1979-10-22 1980-09-02 Sumitomo Electric Ind Ltd Semi-insulating gallium arsenide crystal
JPS5732643A (en) * 1980-08-06 1982-02-22 Toshiba Corp Annealing method of compound semiconductor single crystal
JPH02239195A (ja) * 1989-03-09 1990-09-21 Nippon Mining Co Ltd 半絶縁性3―5族化合物半導体単結晶の製造方法

Also Published As

Publication number Publication date
JPS5346070B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-12-11

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