JPH01235397A - 半導体レーザ - Google Patents

半導体レーザ

Info

Publication number
JPH01235397A
JPH01235397A JP63064221A JP6422188A JPH01235397A JP H01235397 A JPH01235397 A JP H01235397A JP 63064221 A JP63064221 A JP 63064221A JP 6422188 A JP6422188 A JP 6422188A JP H01235397 A JPH01235397 A JP H01235397A
Authority
JP
Japan
Prior art keywords
clad layer
ridge
diffusion region
difference
transverse mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63064221A
Other languages
English (en)
Japanese (ja)
Inventor
Yoichiro Ota
太田　洋一郎
Tetsuya Yagi
哲哉 八木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63064221A priority Critical patent/JPH01235397A/ja
Priority to US07/322,178 priority patent/US4916709A/en
Priority to DE3908305A priority patent/DE3908305A1/de
Priority to FR8903480A priority patent/FR2628891B1/fr
Publication of JPH01235397A publication Critical patent/JPH01235397A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP63064221A 1988-03-16 1988-03-16 半導体レーザ Pending JPH01235397A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP63064221A JPH01235397A (ja) 1988-03-16 1988-03-16 半導体レーザ
US07/322,178 US4916709A (en) 1988-03-16 1989-03-13 Semiconductor laser device
DE3908305A DE3908305A1 (de) 1988-03-16 1989-03-14 Halbleiterlaser
FR8903480A FR2628891B1 (fr) 1988-03-16 1989-03-16 Laser a semiconducteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63064221A JPH01235397A (ja) 1988-03-16 1988-03-16 半導体レーザ

Publications (1)

Publication Number Publication Date
JPH01235397A true JPH01235397A (ja) 1989-09-20

Family

ID=13251830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63064221A Pending JPH01235397A (ja) 1988-03-16 1988-03-16 半導体レーザ

Country Status (4)

Country Link
US (1) US4916709A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH01235397A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3908305A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2628891B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0231487A (ja) * 1988-07-20 1990-02-01 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
JPH02203586A (ja) * 1989-02-01 1990-08-13 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
JP2686306B2 (ja) * 1989-02-01 1997-12-08 三菱電機株式会社 半導体レーザ装置とその製造方法
NL8900748A (nl) * 1989-03-28 1990-10-16 Philips Nv Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
JPH0314281A (ja) * 1989-06-13 1991-01-22 Nec Corp 窓付自己整合型半導体レーザ及びその製造方法
DE4240539C2 (de) * 1992-01-21 1997-07-03 Mitsubishi Electric Corp Verfahren zur Herstellung eines Halbleiterlasers
GB2265252B (en) * 1992-03-17 1995-11-01 Bookham Technology Ltd An electro-optic device
JP3238783B2 (ja) * 1992-07-30 2001-12-17 シャープ株式会社 半導体レーザ素子
JP2002134838A (ja) * 2000-10-30 2002-05-10 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176287A (ja) * 1984-02-22 1985-09-10 Toshiba Corp ストライプ構造二重ヘテロ接合形レ−ザの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1570479A (en) * 1978-02-14 1980-07-02 Standard Telephones Cables Ltd Heterostructure laser
JPS5654083A (en) * 1979-10-05 1981-05-13 Nec Corp Semiconductor laser apparatus
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
JPS58207690A (ja) * 1982-05-28 1983-12-03 Nec Corp 埋め込み形半導体レ−ザ
JPS59108386A (ja) * 1982-12-14 1984-06-22 Fujitsu Ltd 半導体発光装置
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS6151890A (ja) * 1984-08-21 1986-03-14 Toshiba Corp 埋込み型半導体レ−ザの製造方法
DE3435148A1 (de) * 1984-09-25 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Laserdiode mit vergrabener aktiver schicht und mit seitlicher strombegrezung durch selbstjustierten pn-uebergang sowie verfahren zur herstellung einer solchen laserdiode
JPS61224387A (ja) * 1985-03-28 1986-10-06 Rikagaku Kenkyusho 半導体装置
JPS63211788A (ja) * 1987-02-27 1988-09-02 Mitsubishi Electric Corp 半導体レ−ザおよびその製造方法
US4821278A (en) * 1987-04-02 1989-04-11 Trw Inc. Inverted channel substrate planar semiconductor laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176287A (ja) * 1984-02-22 1985-09-10 Toshiba Corp ストライプ構造二重ヘテロ接合形レ−ザの製造方法

Also Published As

Publication number Publication date
FR2628891A1 (fr) 1989-09-22
FR2628891B1 (fr) 1994-01-07
DE3908305A1 (de) 1989-09-28
DE3908305C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-02-07
US4916709A (en) 1990-04-10

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