JPH01104052U - - Google Patents

Info

Publication number
JPH01104052U
JPH01104052U JP1987199984U JP19998487U JPH01104052U JP H01104052 U JPH01104052 U JP H01104052U JP 1987199984 U JP1987199984 U JP 1987199984U JP 19998487 U JP19998487 U JP 19998487U JP H01104052 U JPH01104052 U JP H01104052U
Authority
JP
Japan
Prior art keywords
gate electrode
gate
regions
layer
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987199984U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987199984U priority Critical patent/JPH01104052U/ja
Priority to DE3855533T priority patent/DE3855533T2/de
Priority to EP88121721A priority patent/EP0322860B1/en
Priority to US07/291,463 priority patent/US5012313A/en
Priority to KR1019880017634A priority patent/KR910009041B1/ko
Publication of JPH01104052U publication Critical patent/JPH01104052U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

【図面の簡単な説明】
第１図は本考案の一実施例のゲート入力保護回
路部の断面図である。 １：半導体基板、２：酸化膜、３：ポリシリコ
ンゲート電極延長部、３１：分離領域、４：シヨ
ツトキーバリア接触金属層、６１：ゲート端子配
線、６２：ソース端子配線。

Claims (1)

    【実用新案登録請求の範囲】
  1. ゲート絶縁膜上にゲート電極の延長領域および
    ゲート電極と同一材料からなるソース電極と接続
    される分離領域と該両領域に接触する層とを備え
    、ゲート電極材料および接触層のいずれかが半導
    体よりなり、前記両領域と接触層とによりそれぞ
    れシヨツトキーバリアが形成されたことを特徴と
    する絶縁ゲード型半導体装置。
JP1987199984U 1987-12-28 1987-12-28 Pending JPH01104052U (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1987199984U JPH01104052U (ja) 1987-12-28 1987-12-28
DE3855533T DE3855533T2 (de) 1987-12-28 1988-12-27 Halbleiteranordnung mit isoliertem Gate
EP88121721A EP0322860B1 (en) 1987-12-28 1988-12-27 Insulated gate semiconductor device
US07/291,463 US5012313A (en) 1987-12-28 1988-12-28 Insulated gate semiconductor device
KR1019880017634A KR910009041B1 (ko) 1987-12-28 1988-12-28 절연게이트 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987199984U JPH01104052U (ja) 1987-12-28 1987-12-28

Publications (1)

Publication Number Publication Date
JPH01104052U true JPH01104052U (ja) 1989-07-13

Family

ID=31490413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987199984U Pending JPH01104052U (ja) 1987-12-28 1987-12-28

Country Status (1)

Country Link
JP (1) JPH01104052U (ja)

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