JPH02137053U - - Google Patents

Info

Publication number
JPH02137053U
JPH02137053U JP1989043098U JP4309889U JPH02137053U JP H02137053 U JPH02137053 U JP H02137053U JP 1989043098 U JP1989043098 U JP 1989043098U JP 4309889 U JP4309889 U JP 4309889U JP H02137053 U JPH02137053 U JP H02137053U
Authority
JP
Japan
Prior art keywords
insulating layer
electrode
gate insulating
gate
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1989043098U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989043098U priority Critical patent/JPH02137053U/ja
Priority to DE89120014T priority patent/DE68912071T2/de
Priority to EP89120014A priority patent/EP0366146B1/en
Priority to CA002001682A priority patent/CA2001682C/en
Priority to KR1019890015604A priority patent/KR930003556B1/ko
Publication of JPH02137053U publication Critical patent/JPH02137053U/ja
Priority to US07/668,741 priority patent/US5196912A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)

Description

【図面の簡単な説明】
第1図は本考案に係る薄膜トランジスタの一実
施例を示す断面図、第2図はそのVG−ID特性
を示す図、第3図は薄膜トランジスタを示す断面
図、第4図はそのVG−ID特性を示す図である
。 11…絶縁基板、12…ゲート電極、13…ゲ
ート絶縁層、13a…シリコン窒化膜、13b…
アモルフアス・シリコン、14…半導体層、15
…オーミツク構成層、16…ソース電極、17…
ドレイン電極。

Claims (1)

    【実用新案登録請求の範囲】
  1. ゲート電極と、このゲート電極を絶縁被覆する
    ゲート絶縁層と、このゲート絶縁層を挟んで前記
    ゲート電極と対向した半導体層と、この半導体層
    と電気的に接続したソース電極およびドレイン電
    極とを有する薄膜トランジスタにおいて、前記ゲ
    ート絶縁層を絶縁体と半導体とを交互に積層した
    複層構造としたことを特徴とする薄膜トランジス
    タ。
JP1989043098U 1988-10-28 1989-04-14 Pending JPH02137053U (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP1989043098U JPH02137053U (ja) 1989-04-14 1989-04-14
DE89120014T DE68912071T2 (de) 1988-10-28 1989-10-27 Dünnfilm-Transistor mit einer Speicherfunktion und Verfahren zur Verwendung eines Dünnfilmtransistors als Speicherelement.
EP89120014A EP0366146B1 (en) 1988-10-28 1989-10-27 Thin film transistor having memory function and method for using thin film transistor as memory element
CA002001682A CA2001682C (en) 1988-10-28 1989-10-27 Thin film transistor having memory function and method for using thin film transistor as memory element
KR1019890015604A KR930003556B1 (ko) 1988-10-28 1989-10-28 메모리 트랜지스터 시스템
US07/668,741 US5196912A (en) 1988-10-28 1991-03-13 Thin film transistor having memory function and method for using thin film transistor as memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989043098U JPH02137053U (ja) 1989-04-14 1989-04-14

Publications (1)

Publication Number Publication Date
JPH02137053U true JPH02137053U (ja) 1990-11-15

Family

ID=31555224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989043098U Pending JPH02137053U (ja) 1988-10-28 1989-04-14

Country Status (1)

Country Link
JP (1) JPH02137053U (ja)

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