JPH0383939U - - Google Patents
Info
- Publication number
- JPH0383939U JPH0383939U JP14480689U JP14480689U JPH0383939U JP H0383939 U JPH0383939 U JP H0383939U JP 14480689 U JP14480689 U JP 14480689U JP 14480689 U JP14480689 U JP 14480689U JP H0383939 U JPH0383939 U JP H0383939U
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- silicon
- thin film
- film transistor
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Description
第１図は、本考案の薄膜トランジスタの断面図
を示す。 １…絶縁基板、２…多結晶シリコン層、３…酸
化膜、４…ゲート電極、５…層間絶縁膜、６…コ
ンタクトホール、７…アモルフアス領域。
を示す。 １…絶縁基板、２…多結晶シリコン層、３…酸
化膜、４…ゲート電極、５…層間絶縁膜、６…コ
ンタクトホール、７…アモルフアス領域。
Claims (1)
- 絶縁基板上にシリコンよりなる活性層を有する
薄膜トランジスタにおいて、前記活性層のＡｌ系
金属配線と接触する領域はアモルフアスシリコン
であり、その他の領域は多結晶シリコンであるこ
とを特徴とする薄膜トランジスタ。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14480689U JPH0383939U (ja) | 1989-12-15 | 1989-12-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14480689U JPH0383939U (ja) | 1989-12-15 | 1989-12-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0383939U true JPH0383939U (ja) | 1991-08-26 |
Family
ID=31691482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14480689U Pending JPH0383939U (ja) | 1989-12-15 | 1989-12-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0383939U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008155174A (ja) * | 2006-12-26 | 2008-07-10 | Lisotek Co Ltd | 空気清浄機能を有する陰イオン発生器 |
-
1989
- 1989-12-15 JP JP14480689U patent/JPH0383939U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008155174A (ja) * | 2006-12-26 | 2008-07-10 | Lisotek Co Ltd | 空気清浄機能を有する陰イオン発生器 |