JP7707119B2 - 半導体製造装置のための温度調節装置、および半導体製造システム - Google Patents

半導体製造装置のための温度調節装置、および半導体製造システム Download PDF

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Publication number
JP7707119B2
JP7707119B2 JP2022058188A JP2022058188A JP7707119B2 JP 7707119 B2 JP7707119 B2 JP 7707119B2 JP 2022058188 A JP2022058188 A JP 2022058188A JP 2022058188 A JP2022058188 A JP 2022058188A JP 7707119 B2 JP7707119 B2 JP 7707119B2
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Japan
Prior art keywords
heating
cooling
liquid
temperature
semiconductor manufacturing
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JP2022058188A
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English (en)
Japanese (ja)
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JP2023149554A (ja
JP2023149554A5 (enExample
Inventor
幸大 福住
慎一 新田
典男 国保
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Ebara Corp
CKD Corp
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Ebara Corp
CKD Corp
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Publication date
Application filed by Ebara Corp, CKD Corp filed Critical Ebara Corp
Priority to JP2022058188A priority Critical patent/JP7707119B2/ja
Priority to US18/189,639 priority patent/US12648393B2/en
Priority to CN202310296058.4A priority patent/CN116895557A/zh
Priority to KR1020230039647A priority patent/KR102995155B1/ko
Priority to TW112111457A priority patent/TW202341322A/zh
Publication of JP2023149554A publication Critical patent/JP2023149554A/ja
Publication of JP2023149554A5 publication Critical patent/JP2023149554A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
    • F25D17/00—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces
    • F25D17/02—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces for circulating liquids, e.g. brine
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/01—Control of temperature without auxiliary power
    • G05D23/13—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures
    • G05D23/1306—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures for liquids
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/01—Control of temperature without auxiliary power
    • G05D23/13—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures
    • G05D23/1306—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures for liquids
    • G05D23/1313—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures for liquids without temperature sensing element
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Combustion & Propulsion (AREA)
  • Control Of Temperature (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
JP2022058188A 2022-03-31 2022-03-31 半導体製造装置のための温度調節装置、および半導体製造システム Active JP7707119B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2022058188A JP7707119B2 (ja) 2022-03-31 2022-03-31 半導体製造装置のための温度調節装置、および半導体製造システム
US18/189,639 US12648393B2 (en) 2022-03-31 2023-03-24 Temperature regulating apparatus for semiconductor-device manufacturing equipment, and semiconductor-device manufacturing system
CN202310296058.4A CN116895557A (zh) 2022-03-31 2023-03-24 半导体制造装置用的温度调节装置和半导体制造系统
KR1020230039647A KR102995155B1 (ko) 2022-03-31 2023-03-27 반도체 제조 장치를 위한 온도 조절 장치, 및 반도체 제조 시스템
TW112111457A TW202341322A (zh) 2022-03-31 2023-03-27 用於半導體製造裝置之溫度調節裝置、及半導體製造系統

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022058188A JP7707119B2 (ja) 2022-03-31 2022-03-31 半導体製造装置のための温度調節装置、および半導体製造システム

Publications (3)

Publication Number Publication Date
JP2023149554A JP2023149554A (ja) 2023-10-13
JP2023149554A5 JP2023149554A5 (enExample) 2024-10-15
JP7707119B2 true JP7707119B2 (ja) 2025-07-14

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JP2022058188A Active JP7707119B2 (ja) 2022-03-31 2022-03-31 半導体製造装置のための温度調節装置、および半導体製造システム

Country Status (5)

Country Link
US (1) US12648393B2 (enExample)
JP (1) JP7707119B2 (enExample)
KR (1) KR102995155B1 (enExample)
CN (1) CN116895557A (enExample)
TW (1) TW202341322A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7707119B2 (ja) * 2022-03-31 2025-07-14 株式会社荏原製作所 半導体製造装置のための温度調節装置、および半導体製造システム
WO2025058041A1 (ja) 2023-09-14 2025-03-20 キヤノン株式会社 記録装置
JP7864678B2 (ja) * 2023-11-16 2026-05-25 株式会社荏原製作所 熱媒体供給装置
WO2026155002A1 (ja) * 2025-01-16 2026-07-23 東京エレクトロン株式会社 コンピュータプログラム、情報処理方法及び情報処理装置

Citations (4)

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JP2005197471A (ja) 2004-01-07 2005-07-21 Tokyo Electron Ltd 基板処理装置及び温度調節方法
US20120052690A1 (en) 2010-08-27 2012-03-01 Applied Materials, Inc. Temperature enhanced electrostatic chucking in plasma processing apparatus
JP2013105359A (ja) 2011-11-15 2013-05-30 Tokyo Electron Ltd 温度制御システム、半導体製造装置及び温度制御方法

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JP3917237B2 (ja) * 1997-05-20 2007-05-23 東京エレクトロン株式会社 レジスト膜形成方法
US7374477B2 (en) * 2002-02-06 2008-05-20 Applied Materials, Inc. Polishing pads useful for endpoint detection in chemical mechanical polishing
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JP2002168551A (ja) * 2000-11-30 2002-06-14 Tokyo Electron Ltd 処理装置の電極用冷却装置
US8110044B2 (en) * 2003-03-07 2012-02-07 Tokyo Electron Limited Substrate processing apparatus and temperature control device
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JP5032269B2 (ja) * 2007-11-02 2012-09-26 東京エレクトロン株式会社 被処理基板の温度調節装置及び温度調節方法、並びにこれを備えたプラズマ処理装置
JP5172615B2 (ja) * 2008-11-12 2013-03-27 Ｃｋｄ株式会社 温度制御装置
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JP2019528187A (ja) * 2016-08-31 2019-10-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 環状プラテン又は研磨パッドを有する研磨システム
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JP7339135B2 (ja) * 2019-11-20 2023-09-05 Ckd株式会社 温度制御システム
JP7707119B2 (ja) * 2022-03-31 2025-07-14 株式会社荏原製作所 半導体製造装置のための温度調節装置、および半導体製造システム
JP7864678B2 (ja) * 2023-11-16 2026-05-25 株式会社荏原製作所 熱媒体供給装置

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JP2002141287A (ja) 2000-10-30 2002-05-17 Hitachi Ltd プラズマ処理装置
JP2005197471A (ja) 2004-01-07 2005-07-21 Tokyo Electron Ltd 基板処理装置及び温度調節方法
US20120052690A1 (en) 2010-08-27 2012-03-01 Applied Materials, Inc. Temperature enhanced electrostatic chucking in plasma processing apparatus
JP2013105359A (ja) 2011-11-15 2013-05-30 Tokyo Electron Ltd 温度制御システム、半導体製造装置及び温度制御方法

Also Published As

Publication number Publication date
US20230317482A1 (en) 2023-10-05
TW202341322A (zh) 2023-10-16
JP2023149554A (ja) 2023-10-13
KR102995155B1 (ko) 2026-07-24
KR20230141544A (ko) 2023-10-10
CN116895557A (zh) 2023-10-17
US12648393B2 (en) 2026-06-02

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