JP7613564B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7613564B2
JP7613564B2 JP2023516870A JP2023516870A JP7613564B2 JP 7613564 B2 JP7613564 B2 JP 7613564B2 JP 2023516870 A JP2023516870 A JP 2023516870A JP 2023516870 A JP2023516870 A JP 2023516870A JP 7613564 B2 JP7613564 B2 JP 7613564B2
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JP
Japan
Prior art keywords
region
sense
igbt
diode
semiconductor substrate
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JP2023516870A
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English (en)
Japanese (ja)
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JPWO2022230014A1 (https=
Inventor
毅 大佐賀
保夫 阿多
佑貴 秦
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of JPWO2022230014A1 publication Critical patent/JPWO2022230014A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2023516870A 2021-04-26 2021-04-26 半導体装置 Active JP7613564B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/016615 WO2022230014A1 (ja) 2021-04-26 2021-04-26 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2022230014A1 JPWO2022230014A1 (https=) 2022-11-03
JP7613564B2 true JP7613564B2 (ja) 2025-01-15

Family

ID=83846786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023516870A Active JP7613564B2 (ja) 2021-04-26 2021-04-26 半導体装置

Country Status (5)

Country Link
US (1) US20240014206A1 (https=)
JP (1) JP7613564B2 (https=)
CN (1) CN117242580A (https=)
DE (1) DE112021007588T5 (https=)
WO (1) WO2022230014A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7540600B2 (ja) * 2021-07-20 2024-08-27 株式会社デンソー 半導体装置
JP2024098458A (ja) * 2023-01-10 2024-07-23 富士電機株式会社 半導体装置
DE102023116868B3 (de) 2023-06-27 2024-10-17 Infineon Technologies Ag RC-IGBT und Verfahren zum Betreiben einer Halbbrückenschaltung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014167824A1 (ja) 2013-04-10 2014-10-16 株式会社デンソー 半導体装置
WO2015118714A1 (ja) 2014-02-10 2015-08-13 トヨタ自動車株式会社 半導体装置
JP2017103400A (ja) 2015-12-03 2017-06-08 富士電機株式会社 半導体装置
JP2019068036A (ja) 2017-05-30 2019-04-25 富士電機株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4577425B2 (ja) 2007-11-07 2010-11-10 株式会社デンソー 半導体装置
KR101276407B1 (ko) * 2010-05-07 2013-06-19 도요타지도샤가부시키가이샤 반도체 장치
US8716746B2 (en) * 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
CN104995737B (zh) * 2013-02-13 2017-10-27 丰田自动车株式会社 半导体装置
JP5918288B2 (ja) * 2014-03-03 2016-05-18 トヨタ自動車株式会社 半導体装置
JP2015176927A (ja) * 2014-03-13 2015-10-05 株式会社東芝 半導体装置および絶縁ゲート型バイポーラトランジスタ
WO2020090923A1 (ja) * 2018-11-02 2020-05-07 ローム株式会社 半導体装置、半導体モジュール、リレーユニット、バッテリユニット、及び車両

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014167824A1 (ja) 2013-04-10 2014-10-16 株式会社デンソー 半導体装置
WO2015118714A1 (ja) 2014-02-10 2015-08-13 トヨタ自動車株式会社 半導体装置
JP2017103400A (ja) 2015-12-03 2017-06-08 富士電機株式会社 半導体装置
JP2019068036A (ja) 2017-05-30 2019-04-25 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
US20240014206A1 (en) 2024-01-11
WO2022230014A1 (ja) 2022-11-03
DE112021007588T5 (de) 2024-02-15
CN117242580A (zh) 2023-12-15
JPWO2022230014A1 (https=) 2022-11-03

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