DE112021007588T5 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

Info

Publication number
DE112021007588T5
DE112021007588T5 DE112021007588.8T DE112021007588T DE112021007588T5 DE 112021007588 T5 DE112021007588 T5 DE 112021007588T5 DE 112021007588 T DE112021007588 T DE 112021007588T DE 112021007588 T5 DE112021007588 T5 DE 112021007588T5
Authority
DE
Germany
Prior art keywords
region
igbt
diode
measurement
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112021007588.8T
Other languages
German (de)
English (en)
Inventor
Tsuyoshi OSAGA
Yasuo ATA
Yuki HATA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE112021007588T5 publication Critical patent/DE112021007588T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE112021007588.8T 2021-04-26 2021-04-26 Halbleitervorrichtung Pending DE112021007588T5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/016615 WO2022230014A1 (ja) 2021-04-26 2021-04-26 半導体装置

Publications (1)

Publication Number Publication Date
DE112021007588T5 true DE112021007588T5 (de) 2024-02-15

Family

ID=83846786

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021007588.8T Pending DE112021007588T5 (de) 2021-04-26 2021-04-26 Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US20240014206A1 (https=)
JP (1) JP7613564B2 (https=)
CN (1) CN117242580A (https=)
DE (1) DE112021007588T5 (https=)
WO (1) WO2022230014A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7540600B2 (ja) * 2021-07-20 2024-08-27 株式会社デンソー 半導体装置
JP2024098458A (ja) * 2023-01-10 2024-07-23 富士電機株式会社 半導体装置
DE102023116868B3 (de) 2023-06-27 2024-10-17 Infineon Technologies Ag RC-IGBT und Verfahren zum Betreiben einer Halbbrückenschaltung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135414A (ja) 2007-11-07 2009-06-18 Denso Corp 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101276407B1 (ko) * 2010-05-07 2013-06-19 도요타지도샤가부시키가이샤 반도체 장치
US8716746B2 (en) * 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
CN104995737B (zh) * 2013-02-13 2017-10-27 丰田自动车株式会社 半导体装置
JP5949646B2 (ja) * 2013-04-10 2016-07-13 株式会社デンソー 半導体装置
JP6142813B2 (ja) * 2014-02-10 2017-06-07 トヨタ自動車株式会社 半導体装置
JP5918288B2 (ja) * 2014-03-03 2016-05-18 トヨタ自動車株式会社 半導体装置
JP2015176927A (ja) * 2014-03-13 2015-10-05 株式会社東芝 半導体装置および絶縁ゲート型バイポーラトランジスタ
JP6686398B2 (ja) * 2015-12-03 2020-04-22 富士電機株式会社 半導体装置
JP7225562B2 (ja) * 2017-05-30 2023-02-21 富士電機株式会社 半導体装置
WO2020090923A1 (ja) * 2018-11-02 2020-05-07 ローム株式会社 半導体装置、半導体モジュール、リレーユニット、バッテリユニット、及び車両

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135414A (ja) 2007-11-07 2009-06-18 Denso Corp 半導体装置

Also Published As

Publication number Publication date
US20240014206A1 (en) 2024-01-11
JP7613564B2 (ja) 2025-01-15
WO2022230014A1 (ja) 2022-11-03
CN117242580A (zh) 2023-12-15
JPWO2022230014A1 (https=) 2022-11-03

Similar Documents

Publication Publication Date Title
DE102009014056B4 (de) Halbleitervorrichtung
DE102014106825B4 (de) Halbleitervorrichtung
DE112021007588T5 (de) Halbleitervorrichtung
DE102019201284A1 (de) Halbleitervorrichtung, Halbleiterbaugruppe, Halbleitermodul und Halbleiterschaltungsvorrichtung
DE102013103378B4 (de) Integrierte Schaltung mit Leistungstransistorzellen und einer Verbindungsleitung
DE102015105638A1 (de) Halbleitervorrichtung mit elektrostatischer Entladungsschutzstruktur
DE112015006984T5 (de) Halbleitervorrichtung und halbleitermodul, das mit derselben versehen ist
DE102022119539A1 (de) Halbleitervorrichtung und Verfahren zum Steuern einer Halbleitervorrichtung
DE102020122788A1 (de) Halbleitermodul
DE102021123446A1 (de) Halbleitervorrichtung
DE102017200252A1 (de) Halbleitervorrichtung
DE102016214132A1 (de) Transistorelement und Halbleitervorrichtung
DE102020203247B4 (de) Halbleitervorrichtung
DE102018104060A1 (de) Halbleitervorrichtung
DE112013007220B4 (de) Halbleitervorrichtung
DE112015005384T5 (de) Halbleitervorrichtung und leistungsumsetzungsvorrichtung
DE112019007210T5 (de) Halbleitervorrichtung
DE112022006377T5 (de) Halbleitervorrichtung und Leistungsumwandlungsvorrichtung
DE102020114480A1 (de) Halbleitervorrichtung
DE112020007221T5 (de) Halbleitervorrichtung
DE112016007133T5 (de) Halbleitervorrichtung
DE102020110615A1 (de) Halbleitervorrichtung
DE102023128722A1 (de) Halbleitervorrichtung
DE102020114954B4 (de) Halbleitervorrichtung
DE102022127476A1 (de) Halbleitervorrichtung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029739000

Ipc: H10D0012000000

R084 Declaration of willingness to licence