CN117242580A - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN117242580A
CN117242580A CN202180097332.4A CN202180097332A CN117242580A CN 117242580 A CN117242580 A CN 117242580A CN 202180097332 A CN202180097332 A CN 202180097332A CN 117242580 A CN117242580 A CN 117242580A
Authority
CN
China
Prior art keywords
region
sense
igbt
diode
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180097332.4A
Other languages
English (en)
Chinese (zh)
Inventor
大佐贺毅
阿多保夫
秦佑贵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN117242580A publication Critical patent/CN117242580A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202180097332.4A 2021-04-26 2021-04-26 半导体装置 Pending CN117242580A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/016615 WO2022230014A1 (ja) 2021-04-26 2021-04-26 半導体装置

Publications (1)

Publication Number Publication Date
CN117242580A true CN117242580A (zh) 2023-12-15

Family

ID=83846786

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180097332.4A Pending CN117242580A (zh) 2021-04-26 2021-04-26 半导体装置

Country Status (5)

Country Link
US (1) US20240014206A1 (https=)
JP (1) JP7613564B2 (https=)
CN (1) CN117242580A (https=)
DE (1) DE112021007588T5 (https=)
WO (1) WO2022230014A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7540600B2 (ja) * 2021-07-20 2024-08-27 株式会社デンソー 半導体装置
JP2024098458A (ja) * 2023-01-10 2024-07-23 富士電機株式会社 半導体装置
DE102023116868B3 (de) 2023-06-27 2024-10-17 Infineon Technologies Ag RC-IGBT und Verfahren zum Betreiben einer Halbbrückenschaltung

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4577425B2 (ja) 2007-11-07 2010-11-10 株式会社デンソー 半導体装置
KR101276407B1 (ko) * 2010-05-07 2013-06-19 도요타지도샤가부시키가이샤 반도체 장치
US8716746B2 (en) * 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
CN104995737B (zh) * 2013-02-13 2017-10-27 丰田自动车株式会社 半导体装置
JP5949646B2 (ja) * 2013-04-10 2016-07-13 株式会社デンソー 半導体装置
JP6142813B2 (ja) * 2014-02-10 2017-06-07 トヨタ自動車株式会社 半導体装置
JP5918288B2 (ja) * 2014-03-03 2016-05-18 トヨタ自動車株式会社 半導体装置
JP2015176927A (ja) * 2014-03-13 2015-10-05 株式会社東芝 半導体装置および絶縁ゲート型バイポーラトランジスタ
JP6686398B2 (ja) * 2015-12-03 2020-04-22 富士電機株式会社 半導体装置
JP7225562B2 (ja) * 2017-05-30 2023-02-21 富士電機株式会社 半導体装置
WO2020090923A1 (ja) * 2018-11-02 2020-05-07 ローム株式会社 半導体装置、半導体モジュール、リレーユニット、バッテリユニット、及び車両

Also Published As

Publication number Publication date
US20240014206A1 (en) 2024-01-11
JP7613564B2 (ja) 2025-01-15
WO2022230014A1 (ja) 2022-11-03
DE112021007588T5 (de) 2024-02-15
JPWO2022230014A1 (https=) 2022-11-03

Similar Documents

Publication Publication Date Title
KR101534106B1 (ko) 반도체장치
JP5011748B2 (ja) 半導体装置
CN110462840B (zh) 半导体装置
US10672761B2 (en) Semiconductor device
JP2016167539A (ja) 半導体装置
JP6460016B2 (ja) スイッチング素子
JP5605095B2 (ja) 半導体装置
CN117242580A (zh) 半导体装置
JP6666292B2 (ja) 半導体装置
CN113632238B (zh) 半导体装置
CN112420633A (zh) 半导体装置及逆变器
US20230335470A1 (en) Semiconductor device
US10741550B2 (en) Reverse-conducting insulated gate bipolar transistor
JP6540563B2 (ja) 半導体装置
US11538802B2 (en) Semiconductor device including a switching element in a first element region and a diode element in a second element region
CN113661576B (zh) 半导体装置
JP7706547B2 (ja) センサ配置を有する半導体デバイスのための保護構造
JP5167741B2 (ja) 半導体装置
US11581307B2 (en) Semiconductor device
JP7353482B2 (ja) 半導体装置
JP7521620B2 (ja) 半導体装置
CN115084255B (zh) 半导体装置
JP7819613B2 (ja) 半導体装置
CN116895693A (zh) 半导体装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination