JP7516786B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
JP7516786B2
JP7516786B2 JP2020040801A JP2020040801A JP7516786B2 JP 7516786 B2 JP7516786 B2 JP 7516786B2 JP 2020040801 A JP2020040801 A JP 2020040801A JP 2020040801 A JP2020040801 A JP 2020040801A JP 7516786 B2 JP7516786 B2 JP 7516786B2
Authority
JP
Japan
Prior art keywords
substrate
layer
semiconductor device
base material
circuit element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020040801A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021002644A5 (https=
JP2021002644A (ja
Inventor
将之 青池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2020040801A priority Critical patent/JP7516786B2/ja
Priority to TW113136387A priority patent/TWI915980B/zh
Priority to TW113118768A priority patent/TWI879574B/zh
Priority to TW109116022A priority patent/TWI825318B/zh
Priority to TW112130657A priority patent/TWI854787B/zh
Priority to US16/901,980 priority patent/US11677018B2/en
Priority to CN202411653284.4A priority patent/CN119694992A/zh
Priority to CN202010564522.XA priority patent/CN112117246A/zh
Priority to CN202411653853.5A priority patent/CN119694993A/zh
Priority to CN202411653966.5A priority patent/CN119694995A/zh
Priority to CN202411653903.XA priority patent/CN119694994A/zh
Publication of JP2021002644A publication Critical patent/JP2021002644A/ja
Publication of JP2021002644A5 publication Critical patent/JP2021002644A5/ja
Priority to US18/296,778 priority patent/US12136664B2/en
Priority to JP2024077830A priority patent/JP7677497B2/ja
Application granted granted Critical
Publication of JP7516786B2 publication Critical patent/JP7516786B2/ja
Priority to US18/903,862 priority patent/US20250022942A1/en
Priority to JP2025074306A priority patent/JP2025114644A/ja
Priority to JP2025074305A priority patent/JP2025114643A/ja
Priority to JP2025074304A priority patent/JP2025114642A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/253—Semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01257—Changing the shapes of bumps by reflowing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01933—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01935—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/227—Multiple bumps having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/261—Functions other than electrical connecting
    • H10W72/265—Providing thermal transfer, e.g. thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/261—Functions other than electrical connecting
    • H10W72/267—Multiple bump connectors having different functions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Bipolar Transistors (AREA)
JP2020040801A 2019-06-21 2020-03-10 半導体装置及びその製造方法 Active JP7516786B2 (ja)

Priority Applications (17)

Application Number Priority Date Filing Date Title
JP2020040801A JP7516786B2 (ja) 2019-06-21 2020-03-10 半導体装置及びその製造方法
TW113136387A TWI915980B (zh) 2019-06-21 2020-05-14 半導體裝置
TW113118768A TWI879574B (zh) 2019-06-21 2020-05-14 半導體裝置
TW109116022A TWI825318B (zh) 2019-06-21 2020-05-14 半導體裝置及其製造方法
TW112130657A TWI854787B (zh) 2019-06-21 2020-05-14 半導體裝置
US16/901,980 US11677018B2 (en) 2019-06-21 2020-06-15 Semiconductor device and method for producing the same
CN202411653903.XA CN119694994A (zh) 2019-06-21 2020-06-19 半导体装置
CN202010564522.XA CN112117246A (zh) 2019-06-21 2020-06-19 半导体装置及其制造方法
CN202411653853.5A CN119694993A (zh) 2019-06-21 2020-06-19 半导体装置
CN202411653966.5A CN119694995A (zh) 2019-06-21 2020-06-19 半导体装置
CN202411653284.4A CN119694992A (zh) 2019-06-21 2020-06-19 半导体装置
US18/296,778 US12136664B2 (en) 2019-06-21 2023-04-06 Semiconductor device and method for producing the same
JP2024077830A JP7677497B2 (ja) 2019-06-21 2024-05-13 半導体装置及びその製造方法
US18/903,862 US20250022942A1 (en) 2019-06-21 2024-10-01 Semiconductor device and method for producing the same
JP2025074304A JP2025114642A (ja) 2019-06-21 2025-04-28 半導体装置
JP2025074306A JP2025114644A (ja) 2019-06-21 2025-04-28 半導体装置
JP2025074305A JP2025114643A (ja) 2019-06-21 2025-04-28 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019115560 2019-06-21
JP2019115560 2019-06-21
JP2020040801A JP7516786B2 (ja) 2019-06-21 2020-03-10 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024077830A Division JP7677497B2 (ja) 2019-06-21 2024-05-13 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2021002644A JP2021002644A (ja) 2021-01-07
JP2021002644A5 JP2021002644A5 (https=) 2022-11-17
JP7516786B2 true JP7516786B2 (ja) 2024-07-17

Family

ID=73798971

Family Applications (5)

Application Number Title Priority Date Filing Date
JP2020040801A Active JP7516786B2 (ja) 2019-06-21 2020-03-10 半導体装置及びその製造方法
JP2024077830A Active JP7677497B2 (ja) 2019-06-21 2024-05-13 半導体装置及びその製造方法
JP2025074304A Pending JP2025114642A (ja) 2019-06-21 2025-04-28 半導体装置
JP2025074306A Pending JP2025114644A (ja) 2019-06-21 2025-04-28 半導体装置
JP2025074305A Pending JP2025114643A (ja) 2019-06-21 2025-04-28 半導体装置

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2024077830A Active JP7677497B2 (ja) 2019-06-21 2024-05-13 半導体装置及びその製造方法
JP2025074304A Pending JP2025114642A (ja) 2019-06-21 2025-04-28 半導体装置
JP2025074306A Pending JP2025114644A (ja) 2019-06-21 2025-04-28 半導体装置
JP2025074305A Pending JP2025114643A (ja) 2019-06-21 2025-04-28 半導体装置

Country Status (4)

Country Link
US (3) US11677018B2 (https=)
JP (5) JP7516786B2 (https=)
CN (5) CN119694993A (https=)
TW (3) TWI854787B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7516786B2 (ja) 2019-06-21 2024-07-17 株式会社村田製作所 半導体装置及びその製造方法
CN113517209A (zh) * 2020-04-10 2021-10-19 长鑫存储技术有限公司 半导体结构及其形成方法
CN117546291A (zh) * 2021-06-11 2024-02-09 株式会社村田制作所 半导体装置
US20250080063A1 (en) * 2023-09-06 2025-03-06 Wolfspeed, Inc. Transistor with gate layout, device implementing the transistor with output pre-matching, and process of implementing the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009190918A (ja) 2008-02-13 2009-08-27 New Japan Radio Co Ltd 窒化物半導体基板の製造方法及び窒化物半導体装置の製造方法
JP2012169586A (ja) 2011-01-24 2012-09-06 Fujitsu Ltd ヒートスプレッダ及びその製造方法、半導体装置、電子装置
JP2013191655A (ja) 2012-03-13 2013-09-26 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタおよびその製造方法
JP2019009409A (ja) 2017-06-28 2019-01-17 株式会社村田製作所 半導体チップ
JP2019075536A (ja) 2017-10-11 2019-05-16 株式会社村田製作所 パワーアンプモジュール

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05190488A (ja) * 1991-07-10 1993-07-30 Nec Corp オーミック電極の製造方法
US7247892B2 (en) * 2000-04-24 2007-07-24 Taylor Geoff W Imaging array utilizing thyristor-based pixel elements
JP4701506B2 (ja) * 2000-09-14 2011-06-15 ソニー株式会社 回路ブロック体の製造方法、配線回路装置の製造方法並びに半導体装置の製造方法
JP2003229366A (ja) * 2002-02-05 2003-08-15 Matsushita Electric Ind Co Ltd 半導体積層構造
JP2005129825A (ja) * 2003-10-27 2005-05-19 Sumitomo Chemical Co Ltd 化合物半導体基板の製造方法
KR100687758B1 (ko) * 2005-12-08 2007-02-27 한국전자통신연구원 이종 접합 바이폴라 트랜지스터 및 그 제조방법
JP2008204968A (ja) * 2007-02-16 2008-09-04 Furukawa Electric Co Ltd:The 半導体パッケージ基板とその製造方法
JP2010206020A (ja) * 2009-03-04 2010-09-16 Panasonic Corp 半導体装置
US20100270591A1 (en) * 2009-04-27 2010-10-28 University Of Seoul Industry Cooperation Foundation High-electron mobility transistor
JP2011199267A (ja) * 2010-02-26 2011-10-06 Sumitomo Chemical Co Ltd 電子デバイスおよび電子デバイスの製造方法
JP2012089828A (ja) * 2010-09-22 2012-05-10 Toshiba Corp 半導体装置の製造方法
US8772817B2 (en) * 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
DE112012006007T5 (de) * 2012-03-09 2014-11-20 Mitsubishi Electric Corp. Halbleitermodul
JP6307832B2 (ja) * 2013-01-22 2018-04-11 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール
JP6120704B2 (ja) * 2013-07-03 2017-04-26 三菱電機株式会社 半導体装置
JP6004343B2 (ja) * 2013-09-13 2016-10-05 日本電信電話株式会社 半導体装置の製造方法
JP2015065241A (ja) * 2013-09-24 2015-04-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2015144248A (ja) * 2013-12-25 2015-08-06 キヤノン株式会社 半導体装置、及びその製造方法
KR102019914B1 (ko) * 2014-06-11 2019-11-04 엘지이노텍 주식회사 발광 소자
US20160141220A1 (en) * 2014-11-18 2016-05-19 Sumitomo Electric Industries, Ltd. Hetero-bipolar transistor and method for producing the same
JP6071009B2 (ja) 2014-11-27 2017-02-01 株式会社村田製作所 化合物半導体装置
JP2016171172A (ja) * 2015-03-12 2016-09-23 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタおよびその製造方法
JP6415381B2 (ja) * 2015-04-30 2018-10-31 三菱電機株式会社 半導体装置の製造方法
JP6348451B2 (ja) 2015-05-25 2018-06-27 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタ
KR102372055B1 (ko) * 2015-06-26 2022-03-08 인텔 코포레이션 가공 실리콘 기판들 상의 gan 디바이스들
WO2017073759A1 (ja) * 2015-10-29 2017-05-04 京セラ株式会社 発光素子、受発光素子モジュールおよび光学式センサ
JP2018026406A (ja) * 2016-08-08 2018-02-15 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ
US9997590B2 (en) * 2016-10-24 2018-06-12 International Büsiness Machines Corporation FinFET resistor and method to fabricate same
US10847436B2 (en) * 2017-10-11 2020-11-24 Murata Manufacturing Co., Ltd. Power amplifier module
JP2019102724A (ja) * 2017-12-06 2019-06-24 株式会社村田製作所 半導体素子
CN108598158B (zh) * 2018-03-09 2019-06-07 苏州闻颂智能科技有限公司 一种共射共基异质结双极型晶体管
JP7516786B2 (ja) 2019-06-21 2024-07-17 株式会社村田製作所 半導体装置及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009190918A (ja) 2008-02-13 2009-08-27 New Japan Radio Co Ltd 窒化物半導体基板の製造方法及び窒化物半導体装置の製造方法
JP2012169586A (ja) 2011-01-24 2012-09-06 Fujitsu Ltd ヒートスプレッダ及びその製造方法、半導体装置、電子装置
JP2013191655A (ja) 2012-03-13 2013-09-26 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタおよびその製造方法
JP2019009409A (ja) 2017-06-28 2019-01-17 株式会社村田製作所 半導体チップ
JP2019075536A (ja) 2017-10-11 2019-05-16 株式会社村田製作所 パワーアンプモジュール

Also Published As

Publication number Publication date
CN119694994A (zh) 2025-03-25
TW202349706A (zh) 2023-12-16
TWI825318B (zh) 2023-12-11
TWI879574B (zh) 2025-04-01
US20250022942A1 (en) 2025-01-16
CN119694993A (zh) 2025-03-25
JP2021002644A (ja) 2021-01-07
TWI854787B (zh) 2024-09-01
CN112117246A (zh) 2020-12-22
US11677018B2 (en) 2023-06-13
TW202435452A (zh) 2024-09-01
JP7677497B2 (ja) 2025-05-15
JP2025114642A (ja) 2025-08-05
CN119694992A (zh) 2025-03-25
JP2025114644A (ja) 2025-08-05
CN119694995A (zh) 2025-03-25
US20200403088A1 (en) 2020-12-24
JP2024102316A (ja) 2024-07-30
TW202504100A (zh) 2025-01-16
US20230246094A1 (en) 2023-08-03
TW202101762A (zh) 2021-01-01
JP2025114643A (ja) 2025-08-05
US12136664B2 (en) 2024-11-05

Similar Documents

Publication Publication Date Title
JP7677497B2 (ja) 半導体装置及びその製造方法
TWI333278B (en) Group iii nitride bases flip-chip integrated circuit and method for fabricating
US12199083B2 (en) RF circuit module and manufacturing method therefor
JP2004319552A (ja) フリップチップ型対面電極ｈｅｍｔ
JP7625825B2 (ja) 半導体装置
JP7608814B2 (ja) Ｒｆ回路モジュール及びその製造方法
TWI915980B (zh) 半導體裝置
JP3744828B2 (ja) 半導体装置
JP2012209334A (ja) ミリ波帯用薄型パッケージおよびその製造方法
JP5562898B2 (ja) 半導体装置およびその製造方法
WO2019208295A1 (ja) バイポーラトランジスタおよびその製造方法
JP2010186962A (ja) 半導体パッケージおよびその作製方法
CN114388457B (zh) 半导体装置
JPH09246812A (ja) 高周波半導体装置
JPS5929377Y2 (ja) 高周波高出力トランジスタ装置
TW202601943A (zh) 表面黏著功率元件及其製作方法
WO2024202593A1 (ja) 化合物半導体増幅器及び回路モジュール

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221109

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20221109

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230823

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230926

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231124

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20240213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240513

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20240520

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240604

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240617

R150 Certificate of patent or registration of utility model

Ref document number: 7516786

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150