TWI854787B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
- Publication number
- TWI854787B TWI854787B TW112130657A TW112130657A TWI854787B TW I854787 B TWI854787 B TW I854787B TW 112130657 A TW112130657 A TW 112130657A TW 112130657 A TW112130657 A TW 112130657A TW I854787 B TWI854787 B TW I854787B
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- Prior art keywords
- substrate
- semiconductor device
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- circuit element
- bonding layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/10—Arrangements for heating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/253—Semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
- H10W42/121—Arrangements for protection of devices protecting against mechanical damage
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W95/00—Packaging processes not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
- H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
- H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01251—Changing the shapes of bumps
- H10W72/01255—Changing the shapes of bumps by using masks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01251—Changing the shapes of bumps
- H10W72/01257—Changing the shapes of bumps by reflowing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
- H10W72/01933—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
- H10W72/01935—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07236—Soldering or alloying
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/221—Structures or relative sizes
- H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/221—Structures or relative sizes
- H10W72/227—Multiple bumps having different sizes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/261—Functions other than electrical connecting
- H10W72/265—Providing thermal transfer, e.g. thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/261—Functions other than electrical connecting
- H10W72/267—Multiple bump connectors having different functions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/926—Multiple bond pads having different sizes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Wire Bonding (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP2019-115560 | 2019-06-21 | ||
| JP2019115560 | 2019-06-21 | ||
| JPJP2020-040801 | 2020-03-10 | ||
| JP2020040801A JP7516786B2 (ja) | 2019-06-21 | 2020-03-10 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202349706A TW202349706A (zh) | 2023-12-16 |
| TWI854787B true TWI854787B (zh) | 2024-09-01 |
Family
ID=73798971
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112130657A TWI854787B (zh) | 2019-06-21 | 2020-05-14 | 半導體裝置 |
| TW109116022A TWI825318B (zh) | 2019-06-21 | 2020-05-14 | 半導體裝置及其製造方法 |
| TW113118768A TWI879574B (zh) | 2019-06-21 | 2020-05-14 | 半導體裝置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109116022A TWI825318B (zh) | 2019-06-21 | 2020-05-14 | 半導體裝置及其製造方法 |
| TW113118768A TWI879574B (zh) | 2019-06-21 | 2020-05-14 | 半導體裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US11677018B2 (https=) |
| JP (5) | JP7516786B2 (https=) |
| CN (5) | CN119694993A (https=) |
| TW (3) | TWI854787B (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7516786B2 (ja) | 2019-06-21 | 2024-07-17 | 株式会社村田製作所 | 半導体装置及びその製造方法 |
| CN113517209A (zh) * | 2020-04-10 | 2021-10-19 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
| CN117546291A (zh) * | 2021-06-11 | 2024-02-09 | 株式会社村田制作所 | 半导体装置 |
| US20250080063A1 (en) * | 2023-09-06 | 2025-03-06 | Wolfspeed, Inc. | Transistor with gate layout, device implementing the transistor with output pre-matching, and process of implementing the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070131971A1 (en) * | 2005-12-08 | 2007-06-14 | Kim Yong W | Hetero junction bipolar transistor and method of manufacturing the same |
| US20160343837A1 (en) * | 2014-11-27 | 2016-11-24 | Murata Manufacturing Co., Ltd. | Compound semiconductor device |
| US20170170365A1 (en) * | 2014-06-11 | 2017-06-15 | Lg Innotek Co., Ltd. | Light emitting device and lighting apparatus |
| US20180309025A1 (en) * | 2015-10-29 | 2018-10-25 | Kyocera Corporation | Light-emitting device, light receiving and emitting device module, and optical sensor |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05190488A (ja) * | 1991-07-10 | 1993-07-30 | Nec Corp | オーミック電極の製造方法 |
| US7247892B2 (en) * | 2000-04-24 | 2007-07-24 | Taylor Geoff W | Imaging array utilizing thyristor-based pixel elements |
| JP4701506B2 (ja) * | 2000-09-14 | 2011-06-15 | ソニー株式会社 | 回路ブロック体の製造方法、配線回路装置の製造方法並びに半導体装置の製造方法 |
| JP2003229366A (ja) * | 2002-02-05 | 2003-08-15 | Matsushita Electric Ind Co Ltd | 半導体積層構造 |
| JP2005129825A (ja) * | 2003-10-27 | 2005-05-19 | Sumitomo Chemical Co Ltd | 化合物半導体基板の製造方法 |
| JP2008204968A (ja) * | 2007-02-16 | 2008-09-04 | Furukawa Electric Co Ltd:The | 半導体パッケージ基板とその製造方法 |
| JP2009190918A (ja) | 2008-02-13 | 2009-08-27 | New Japan Radio Co Ltd | 窒化物半導体基板の製造方法及び窒化物半導体装置の製造方法 |
| JP2010206020A (ja) * | 2009-03-04 | 2010-09-16 | Panasonic Corp | 半導体装置 |
| US20100270591A1 (en) * | 2009-04-27 | 2010-10-28 | University Of Seoul Industry Cooperation Foundation | High-electron mobility transistor |
| JP2011199267A (ja) * | 2010-02-26 | 2011-10-06 | Sumitomo Chemical Co Ltd | 電子デバイスおよび電子デバイスの製造方法 |
| JP2012089828A (ja) * | 2010-09-22 | 2012-05-10 | Toshiba Corp | 半導体装置の製造方法 |
| US8772817B2 (en) * | 2010-12-22 | 2014-07-08 | Cree, Inc. | Electronic device submounts including substrates with thermally conductive vias |
| JP5842457B2 (ja) | 2011-01-24 | 2016-01-13 | 富士通株式会社 | ヒートスプレッダ及びその製造方法、半導体装置、電子装置 |
| DE112012006007T5 (de) * | 2012-03-09 | 2014-11-20 | Mitsubishi Electric Corp. | Halbleitermodul |
| JP5667109B2 (ja) | 2012-03-13 | 2015-02-12 | 日本電信電話株式会社 | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
| JP6307832B2 (ja) * | 2013-01-22 | 2018-04-11 | 三菱マテリアル株式会社 | パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール |
| JP6120704B2 (ja) * | 2013-07-03 | 2017-04-26 | 三菱電機株式会社 | 半導体装置 |
| JP6004343B2 (ja) * | 2013-09-13 | 2016-10-05 | 日本電信電話株式会社 | 半導体装置の製造方法 |
| JP2015065241A (ja) * | 2013-09-24 | 2015-04-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| JP2015144248A (ja) * | 2013-12-25 | 2015-08-06 | キヤノン株式会社 | 半導体装置、及びその製造方法 |
| US20160141220A1 (en) * | 2014-11-18 | 2016-05-19 | Sumitomo Electric Industries, Ltd. | Hetero-bipolar transistor and method for producing the same |
| JP2016171172A (ja) * | 2015-03-12 | 2016-09-23 | 日本電信電話株式会社 | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
| JP6415381B2 (ja) * | 2015-04-30 | 2018-10-31 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP6348451B2 (ja) | 2015-05-25 | 2018-06-27 | 日本電信電話株式会社 | ヘテロ接合バイポーラトランジスタ |
| KR102372055B1 (ko) * | 2015-06-26 | 2022-03-08 | 인텔 코포레이션 | 가공 실리콘 기판들 상의 gan 디바이스들 |
| JP2018026406A (ja) * | 2016-08-08 | 2018-02-15 | 株式会社村田製作所 | ヘテロ接合バイポーラトランジスタ |
| US9997590B2 (en) * | 2016-10-24 | 2018-06-12 | International Büsiness Machines Corporation | FinFET resistor and method to fabricate same |
| JP2019009409A (ja) | 2017-06-28 | 2019-01-17 | 株式会社村田製作所 | 半導体チップ |
| US10847436B2 (en) * | 2017-10-11 | 2020-11-24 | Murata Manufacturing Co., Ltd. | Power amplifier module |
| JP2019075536A (ja) | 2017-10-11 | 2019-05-16 | 株式会社村田製作所 | パワーアンプモジュール |
| JP2019102724A (ja) * | 2017-12-06 | 2019-06-24 | 株式会社村田製作所 | 半導体素子 |
| CN108598158B (zh) * | 2018-03-09 | 2019-06-07 | 苏州闻颂智能科技有限公司 | 一种共射共基异质结双极型晶体管 |
| JP7516786B2 (ja) | 2019-06-21 | 2024-07-17 | 株式会社村田製作所 | 半導体装置及びその製造方法 |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070131971A1 (en) * | 2005-12-08 | 2007-06-14 | Kim Yong W | Hetero junction bipolar transistor and method of manufacturing the same |
| US20170170365A1 (en) * | 2014-06-11 | 2017-06-15 | Lg Innotek Co., Ltd. | Light emitting device and lighting apparatus |
| US20160343837A1 (en) * | 2014-11-27 | 2016-11-24 | Murata Manufacturing Co., Ltd. | Compound semiconductor device |
| US20180309025A1 (en) * | 2015-10-29 | 2018-10-25 | Kyocera Corporation | Light-emitting device, light receiving and emitting device module, and optical sensor |
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| CN119694994A (zh) | 2025-03-25 |
| TW202349706A (zh) | 2023-12-16 |
| TWI825318B (zh) | 2023-12-11 |
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| CN119694992A (zh) | 2025-03-25 |
| JP2025114644A (ja) | 2025-08-05 |
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| US20200403088A1 (en) | 2020-12-24 |
| JP2024102316A (ja) | 2024-07-30 |
| TW202504100A (zh) | 2025-01-16 |
| US20230246094A1 (en) | 2023-08-03 |
| TW202101762A (zh) | 2021-01-01 |
| JP2025114643A (ja) | 2025-08-05 |
| US12136664B2 (en) | 2024-11-05 |
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