JP7445198B2 - マイクロレンズ用感光性樹脂組成物 - Google Patents

マイクロレンズ用感光性樹脂組成物 Download PDF

Info

Publication number
JP7445198B2
JP7445198B2 JP2021501826A JP2021501826A JP7445198B2 JP 7445198 B2 JP7445198 B2 JP 7445198B2 JP 2021501826 A JP2021501826 A JP 2021501826A JP 2021501826 A JP2021501826 A JP 2021501826A JP 7445198 B2 JP7445198 B2 JP 7445198B2
Authority
JP
Japan
Prior art keywords
formula
structural unit
unit represented
mol
resin composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021501826A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2020175036A1 (ja
JPWO2020175036A5 (https=
Inventor
朋哉 鈴木
勲 安達
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of JPWO2020175036A1 publication Critical patent/JPWO2020175036A1/ja
Publication of JPWO2020175036A5 publication Critical patent/JPWO2020175036A5/ja
Application granted granted Critical
Publication of JP7445198B2 publication Critical patent/JP7445198B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2021501826A 2019-02-25 2020-02-04 マイクロレンズ用感光性樹脂組成物 Active JP7445198B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019032076 2019-02-25
JP2019032076 2019-02-25
PCT/JP2020/004145 WO2020175036A1 (ja) 2019-02-25 2020-02-04 マイクロレンズ用感光性樹脂組成物

Publications (3)

Publication Number Publication Date
JPWO2020175036A1 JPWO2020175036A1 (ja) 2021-12-23
JPWO2020175036A5 JPWO2020175036A5 (https=) 2022-12-27
JP7445198B2 true JP7445198B2 (ja) 2024-03-07

Family

ID=72239718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021501826A Active JP7445198B2 (ja) 2019-02-25 2020-02-04 マイクロレンズ用感光性樹脂組成物

Country Status (5)

Country Link
JP (1) JP7445198B2 (https=)
KR (1) KR102849899B1 (https=)
CN (1) CN113474684B (https=)
TW (1) TWI832967B (https=)
WO (1) WO2020175036A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7356184B2 (ja) * 2022-02-18 2023-10-04 有限会社アキュラス 光吸収体の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007086249A1 (ja) 2006-01-25 2007-08-02 Nissan Chemical Industries, Ltd. ポジ型感光性樹脂組成物及びそれから得られる硬化膜
JP2009075329A (ja) 2007-09-20 2009-04-09 Jsr Corp 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
WO2014126088A1 (ja) 2013-02-13 2014-08-21 富士フイルム株式会社 感光性樹脂組成物、これを用いた硬化膜の製造方法、硬化膜、液晶表示装置および有機ｅｌ表示装置
WO2018021049A1 (ja) 2016-07-28 2018-02-01 日産化学工業株式会社 樹脂組成物
US20180284609A1 (en) 2017-03-28 2018-10-04 Promerus, Llc Photosensitive compositions, color filter and microlens derived therefrom

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006337956A (ja) 2005-06-06 2006-12-14 Iwate Toshiba Electronics Co Ltd マイクロレンズアレイの製造方法
JP5696858B2 (ja) * 2010-11-30 2015-04-08 日産化学工業株式会社 マイクロレンズ用感光性樹脂組成物
KR101852528B1 (ko) * 2011-07-07 2018-04-27 닛산 가가쿠 고교 가부시키 가이샤 수지 조성물
WO2013035569A1 (ja) * 2011-09-05 2013-03-14 日産化学工業株式会社 樹脂組成物
CN104870499B (zh) * 2012-12-14 2016-11-23 昭和电工株式会社 共聚物、含有该共聚物的感光性树脂组合物及树脂膜
KR101856554B1 (ko) 2014-02-20 2018-05-10 후지필름 가부시키가이샤 감광성 수지 조성물, 경화물 및 그 제조 방법, 수지 패턴 제조 방법, 경화막, 액정 표시 장치, 유기 el 표시 장치, 적외선 차단 필터, 또한 고체 촬상 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007086249A1 (ja) 2006-01-25 2007-08-02 Nissan Chemical Industries, Ltd. ポジ型感光性樹脂組成物及びそれから得られる硬化膜
JP2009075329A (ja) 2007-09-20 2009-04-09 Jsr Corp 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
WO2014126088A1 (ja) 2013-02-13 2014-08-21 富士フイルム株式会社 感光性樹脂組成物、これを用いた硬化膜の製造方法、硬化膜、液晶表示装置および有機ｅｌ表示装置
WO2018021049A1 (ja) 2016-07-28 2018-02-01 日産化学工業株式会社 樹脂組成物
US20180284609A1 (en) 2017-03-28 2018-10-04 Promerus, Llc Photosensitive compositions, color filter and microlens derived therefrom

Also Published As

Publication number Publication date
JPWO2020175036A1 (ja) 2021-12-23
KR20210132148A (ko) 2021-11-03
CN113474684B (zh) 2025-06-27
TWI832967B (zh) 2024-02-21
KR102849899B1 (ko) 2025-08-26
CN113474684A (zh) 2021-10-01
TW202104298A (zh) 2021-02-01
WO2020175036A1 (ja) 2020-09-03

Similar Documents

Publication Publication Date Title
KR101541440B1 (ko) 폴리머형 광산발생제를 함유하는 레지스트 하층막 형성 조성물 및 이를 이용한 레지스트 패턴의 형성 방법
JP5358005B2 (ja) ポジ型感光性アクリル樹脂およびポジ型感光性樹脂組成物
TW200305059A (en) Negative photoresists for short wavelength imaging
JP6406525B2 (ja) 樹脂組成物
KR101684870B1 (ko) 단분자층 또는 다분자층 형성용 조성물
TWI477901B (zh) Sense of radiation linear composition
JPWO2012017790A1 (ja) レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JPWO2010104074A1 (ja) 側鎖にアセタール構造を有するポリマーを含むレジスト下層膜形成組成物及びレジストパターンの形成方法
JP2019045622A (ja) 感光性樹脂組成物、パターン形成方法、電子デバイスの製造方法、ポリマーおよびポリマーの製造方法
JP7445198B2 (ja) マイクロレンズ用感光性樹脂組成物
KR20130107210A (ko) 감방사선성 조성물
JP2016157100A (ja) 感光性樹脂組成物、硬化膜の製造方法、および硬化膜
JP5884961B2 (ja) 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物
WO2020105458A1 (ja) 熱硬化性樹脂組成物
JP6478053B2 (ja) マイクロレンズ形成用樹脂組成物
JP6687906B2 (ja) 平坦化膜用又はマイクロレンズ用樹脂組成物
JP5534205B2 (ja) 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法
US20250021002A1 (en) Bottom anti-reflective coating for deep ultraviolet lithography, preparation method therefor and use thereof
JP7208593B2 (ja) 低温硬化性樹脂組成物
JP7846464B2 (ja) ポジ型感光性樹脂組成物
JP2014189726A (ja) レンズ形成用感光性樹脂組成物
KR20100086953A (ko) 산 전사용 조성물, 산 전사용 막 및 패턴 형성 방법
WO2023140248A1 (ja) レンズの製造方法、レンズ製造用感放射線性組成物、レンズ、撮像素子、撮像装置、表示素子及び表示装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20221219

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20231004

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20231128

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240109

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240124

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240206

R151 Written notification of patent or utility model registration

Ref document number: 7445198

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151