JP7418905B2 - ワークピースの加工方法 - Google Patents
ワークピースの加工方法 Download PDFInfo
- Publication number
- JP7418905B2 JP7418905B2 JP2019139016A JP2019139016A JP7418905B2 JP 7418905 B2 JP7418905 B2 JP 7418905B2 JP 2019139016 A JP2019139016 A JP 2019139016A JP 2019139016 A JP2019139016 A JP 2019139016A JP 7418905 B2 JP7418905 B2 JP 7418905B2
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- workpiece
- protective film
- processing
- cleaning water
- organic solvent
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
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Classifications
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Laser Beam Processing (AREA)
Description
11a 表面
11b 裏面
13 分割予定ライン
15 デバイス
17 加工痕
19 改質層
21 ダイシングテープ
23 フレーム
25 エキスパンドシート
27 フレーム
31 原料
33 保護膜
35 レーザビーム
37 エッチング液
39 流体
41 有機溶剤
43 洗浄水
45 レーザビーム
12 スピンコーター
14 収容部
14a 空間
16 スピンナテーブル
16a 保持面
18 クランプ
20 スピンドル
22 回転駆動源
24 第1ノズル
26 回転駆動源
28 第2ノズル
30 回転駆動源
42 レーザ加工装置
44 チャックテーブル
46 枠体
46a 流路
48 保持板
48a 保持面
50 クランプ
52 レーザ照射ユニット
62 エッチング槽
72 保護膜除去装置
74 第1ノズル
76 第2ノズル
82 バイト切削装置
84 チャックテーブル
84a 保持面
86 バイト切削ユニット
88 スピンドル
90 工具マウント
92 バイト工具
92a 基台
92b 切り刃
102 研削装置
104 チャックテーブル
104a 保持面
106 研削ユニット
108 スピンドル
110 マウント
112 研削ホイール
114 ホイール基台
116 研削砥石
122 レーザ加工装置
124 レーザ照射ユニット
132 拡張装置
134 支持構造
136 拡張ドラム
138 支持テーブル
140 クランプ
142 昇降機構
144 シリンダケース
146 ピストンロッド
152 プラズマエッチング装置
154 真空チャンバ
154a 開口
154b 排気口
156 ゲート
158 排気ユニット
160 下部電極
162 高周波電源
164 上部電極
164a ガス噴出孔
164b ガス供給孔
166 絶縁材
168 ガス供給源
170 高周波電源
Claims (9)
- ワークピースの加工方法であって、
ワークピースの表面に非水溶性の樹脂でなる保護膜を形成する保護膜形成ステップと、
該保護膜が形成されたワークピースを加工する加工ステップと、
加工されたワークピースの該表面の全体を覆うように有機溶剤を供給して該保護膜を劣化させる劣化ステップと、
劣化した該保護膜に洗浄水を供給して該保護膜をワークピースの該表面から除去する除去ステップと、を含み、
ワークピースの該表面が該有機溶剤によって覆われた状態で該洗浄水の供給を開始し、 該除去ステップでは、該洗浄水を該保護膜に吹き付けるように供給することで、該洗浄水の衝撃により該保護膜をワークピースの該表面から除去することを特徴とするワークピースの加工方法。 - 該除去ステップでは、該洗浄水をエアーと混合して該保護膜に吹き付けるように供給することを特徴とする請求項1に記載のワークピースの加工方法。
- 該除去ステップでは、該洗浄水を200ml/min~400ml/minの条件で該保護膜に吹き付けるように供給することを特徴とする請求項2に記載のワークピースの加工方法。
- 該除去ステップでは、該洗浄水を供給するためのノズルをワークピースの径方向に移動させながら該洗浄水を供給する請求項1から請求項3のいずれかに記載のワークピースの加工方法。
- 該保護膜を劣化させる際には、ワークピースを回転させつつ該有機溶剤をワークピースの中央部に供給し、
該保護膜をワークピースの該表面から除去する際には、該洗浄水をワークピースの該表面側に供給して該保護膜を除去することを特徴とする請求項1から請求項4のいずれかに記載のワークピースの加工方法。 - 該有機溶剤は、イソプロピルアルコールを含むことを特徴とする請求項1から請求項5のいずれかに記載のワークピースの加工方法。
- 該保護膜が形成されたワークピースを加工する際には、ワークピースに吸収される波長のレーザビームをワークピースの該表面側に照射してワークピースが部分的に除去された加工痕を形成することを特徴とする請求項1から請求項6のいずれかに記載のワークピースの加工方法。
- 該保護膜が形成されたワークピースを加工する際には、該保護膜を介してワークピースの該表面側をチャックテーブルで保持しつつワークピースの裏面を研削してワークピースを薄くすることを特徴とする請求項1から請求項6のいずれかに記載のワークピースの加工方法。
- 該保護膜が形成されたワークピースを加工する際には、該保護膜をマスクとするエッチングによってワークピースの一部を除去することを特徴とする請求項1から請求項8のいずれかに記載のワークピースの加工方法。
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US201862731379P | 2018-09-14 | 2018-09-14 | |
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US16/256,647 | 2019-01-24 | ||
US16/256,647 US11133186B2 (en) | 2018-09-14 | 2019-01-24 | Processing method of workpiece |
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US11037792B2 (en) * | 2018-10-25 | 2021-06-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure etching solution and method for fabricating a semiconductor structure using the same etching solution |
KR20200075531A (ko) * | 2018-12-18 | 2020-06-26 | 삼성전자주식회사 | 기판 처리 장치 |
US20200321250A1 (en) * | 2019-04-02 | 2020-10-08 | Semiconductor Components Industries, Llc | Wet chemical die singulation systems and related methods |
KR102148626B1 (ko) * | 2020-02-24 | 2020-08-26 | 이장엽 | 판재의 성형 및 건조 장치 |
KR20220149885A (ko) * | 2021-04-30 | 2022-11-09 | 삼성디스플레이 주식회사 | 표시 장치의 제조 장치 및 표시 장치의 제조 방법 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000315668A (ja) | 1999-04-30 | 2000-11-14 | Shin Etsu Handotai Co Ltd | ウェーハの研磨方法、洗浄方法及び保護膜 |
JP2002141311A (ja) | 2000-10-31 | 2002-05-17 | Shin Etsu Handotai Co Ltd | ウェーハの研磨方法及びウェーハの洗浄方法 |
JP2002164324A (ja) | 2000-11-22 | 2002-06-07 | Sharp Corp | 半導体装置の製造方法 |
JP2005268308A (ja) | 2004-03-16 | 2005-09-29 | Sony Corp | レジスト剥離方法およびレジスト剥離装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0281420A (ja) * | 1988-09-19 | 1990-03-22 | Hitachi Ltd | 半導体装置の製造方法 |
JP3209918B2 (ja) * | 1996-04-18 | 2001-09-17 | 富士通株式会社 | 剥離液及びそれを使用した半導体装置の製造方法 |
US6352747B1 (en) * | 1999-03-31 | 2002-03-05 | Ppg Industries Ohio, Inc. | Spin and spray coating process for curved surfaces |
JP2002333848A (ja) * | 2001-05-10 | 2002-11-22 | Sharp Corp | 複合アクティブマトリクス基板、その製造方法、及び電磁波撮像装置 |
US6830979B2 (en) * | 2001-05-23 | 2004-12-14 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor device |
JP2003320466A (ja) | 2002-05-07 | 2003-11-11 | Disco Abrasive Syst Ltd | レーザビームを使用した加工機 |
JP4416108B2 (ja) * | 2003-11-17 | 2010-02-17 | 株式会社ディスコ | 半導体ウェーハの製造方法 |
JP2006014031A (ja) | 2004-06-28 | 2006-01-12 | Nippon Antenna Co Ltd | 伸縮式ボトムヘリカルアンテナ |
JP4571850B2 (ja) * | 2004-11-12 | 2010-10-27 | 東京応化工業株式会社 | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
JP2010034178A (ja) * | 2008-07-28 | 2010-02-12 | Mitsubishi Gas Chemical Co Inc | シリコンエッチング液およびエッチング方法 |
JP5171909B2 (ja) * | 2010-09-16 | 2013-03-27 | 株式会社東芝 | 微細パターンの形成方法 |
CN102842595B (zh) * | 2011-06-20 | 2015-12-02 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
JP5822356B2 (ja) * | 2012-04-17 | 2015-11-24 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
JP6043693B2 (ja) * | 2012-10-19 | 2016-12-14 | 富士フイルム株式会社 | 保護膜形成用の樹脂組成物、保護膜、パターン形成方法、電子デバイスの製造方法及び電子デバイス |
JP2014203954A (ja) * | 2013-04-04 | 2014-10-27 | 株式会社タムラ製作所 | 半導体素子の製造方法 |
JP2016039186A (ja) * | 2014-08-05 | 2016-03-22 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017038030A (ja) * | 2015-08-14 | 2017-02-16 | 株式会社ディスコ | ウエーハの加工方法及び電子デバイス |
JP6770858B2 (ja) * | 2016-09-09 | 2020-10-21 | 株式会社ディスコ | 分割方法 |
JP2018056502A (ja) * | 2016-09-30 | 2018-04-05 | 株式会社ディスコ | デバイスウエーハの加工方法 |
-
2019
- 2019-01-24 US US16/256,647 patent/US11133186B2/en active Active
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- 2019-09-10 TW TW108132609A patent/TWI827670B/zh active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000315668A (ja) | 1999-04-30 | 2000-11-14 | Shin Etsu Handotai Co Ltd | ウェーハの研磨方法、洗浄方法及び保護膜 |
JP2002141311A (ja) | 2000-10-31 | 2002-05-17 | Shin Etsu Handotai Co Ltd | ウェーハの研磨方法及びウェーハの洗浄方法 |
JP2002164324A (ja) | 2000-11-22 | 2002-06-07 | Sharp Corp | 半導体装置の製造方法 |
JP2005268308A (ja) | 2004-03-16 | 2005-09-29 | Sony Corp | レジスト剥離方法およびレジスト剥離装置 |
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US11133186B2 (en) | 2021-09-28 |
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