JP7414876B2 - バイパスされたゲート構造を有するトランジスタ - Google Patents
バイパスされたゲート構造を有するトランジスタ Download PDFInfo
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- JP7414876B2 JP7414876B2 JP2022059193A JP2022059193A JP7414876B2 JP 7414876 B2 JP7414876 B2 JP 7414876B2 JP 2022059193 A JP2022059193 A JP 2022059193A JP 2022059193 A JP2022059193 A JP 2022059193A JP 7414876 B2 JP7414876 B2 JP 7414876B2
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- 230000004888 barrier function Effects 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 70
- 239000000758 substrate Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 229910010271 silicon carbide Inorganic materials 0.000 description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- -1 AlInGaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910005889 NiSix Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
Claims (10)
- チャネル層と該チャネル層上のバリア層とを含む半導体構造と、
第1の方向に延在するソースコンタクトと、
前記バリア層上のゲート・フィンガーであって、前記ソースコンタクトに隣接して前記第1の方向に延在する、ゲート・フィンガーと、
前記ゲート・フィンガーに隣接するドレインコンタクトであって、前記ゲート・フィンガーが当該ドレインコンタクトと前記ソースコンタクトとの間にある、ドレインコンタクトと、
前記ゲート・フィンガーに接続されたゲート・パッドと、
を備え、
前記ゲート・パッドが、前記ゲート・フィンガーに導電的に接続され、
前記ゲート・パッドに導電的に接続されたゲート・ジャンパーであって、前記ゲート・パッドが前記ゲート・ジャンパーを介して前記ゲート・フィンガーに導電的に接続された、ゲート・ジャンパーをさらに備え、
前記ソースコンタクトが複数のソースコンタクト・セグメントを備え、前記複数のソースコンタクト・セグメントが、前記ソースコンタクト・セグメントのうち第1のソースコンタクト・セグメントと第2のソースコンタクト・セグメントとの間の間隙によって前記第1の方向に離間されている、高電子移動度トランジスタ。 - 前記ゲート・ジャンパーが前記ソースコンタクトの上方に設けられ、前記ソースコンタクトから電気的に絶縁されている、請求項1に記載の高電子移動度トランジスタ。
- 前記第1のソースコンタクト・セグメントと前記第2のソースコンタクト・セグメントとの間の前記間隙内にゲート信号分配バーをさらに備え、前記ゲート信号分配バーが前記ゲート・フィンガーに接触し、前記ゲート・ジャンパーが前記ゲート信号分配バーと導電性接触している、請求項2に記載の高電子移動度トランジスタ。
- 前記ゲート・ジャンパーを前記ゲート信号分配バーに接続する導電性プラグをさらに備える、請求項3に記載の高電子移動度トランジスタ。
- 前記第1の方向に垂直な第2の方向に配置された複数のソースコンタクトをさらに備え、前記複数のソースコンタクトのそれぞれが複数のソースコンタクト・セグメントを備え、前記複数のソースコンタクト・セグメントが、前記ソースコンタクト・セグメントのうちの隣接するソースコンタクト・セグメント間の間隙によって前記第1の方向に離間されている、請求項3から4までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記第2の方向に延在し、前記第2の方向に互いに隣接する前記ソースコンタクト・セグメントのそれぞれに導電的に接続されている、ソースコンタクト・バーをさらに備える、請求項5に記載の高電子移動度トランジスタ。
- 前記ゲート・フィンガー及び前記ゲート・パッドに結合されたゲート・バスをさらに備え、前記ゲート・ジャンパーが前記ゲート・バスに導電的に接続され、前記ゲート・ジャンパーが、前記第1の方向に前記ゲート・バスから離間された、前記ゲート・フィンガーに沿った接触点で、前記ゲート・フィンガーに導電的に接続されている、請求項2から6までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記ゲート・バスは前記ゲート・フィンガーに接続されている、請求項7に記載の高電子移動度トランジスタ。
- 前記ゲート・ジャンパーは、前記ソースコンタクト・セグメントのうち第1のソースコンタクト・セグメントの上方に延在するが、前記ソースコンタクト・セグメントのうち第2のソースコンタクト・セグメントの上方には延在しない、請求項1に記載の高電子移動度トランジスタ。
- 前記ゲート・パッドが、前記ゲート・ジャンパーを介して、前記ゲート・フィンガーに沿った少なくとも第1の点と、前記第1の方向に前記第1の点から離間された、前記ゲート・フィンガーに沿った第2の点とに導電的に接続されている、請求項1に記載の高電子移動度トランジスタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/073,201 | 2016-03-17 | ||
US15/073,201 US9786660B1 (en) | 2016-03-17 | 2016-03-17 | Transistor with bypassed gate structure field |
JP2020128523A JP7056976B2 (ja) | 2016-03-17 | 2020-07-29 | バイパスされたゲート構造を有するトランジスタ |
Related Parent Applications (1)
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JP2020128523A Division JP7056976B2 (ja) | 2016-03-17 | 2020-07-29 | バイパスされたゲート構造を有するトランジスタ |
Publications (2)
Publication Number | Publication Date |
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JP2022079655A JP2022079655A (ja) | 2022-05-26 |
JP7414876B2 true JP7414876B2 (ja) | 2024-01-16 |
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JP2018548833A Active JP6743170B2 (ja) | 2016-03-17 | 2017-03-13 | バイパスされたゲート構造を有するトランジスタ |
JP2020128523A Active JP7056976B2 (ja) | 2016-03-17 | 2020-07-29 | バイパスされたゲート構造を有するトランジスタ |
JP2022059193A Active JP7414876B2 (ja) | 2016-03-17 | 2022-03-31 | バイパスされたゲート構造を有するトランジスタ |
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JP2018548833A Active JP6743170B2 (ja) | 2016-03-17 | 2017-03-13 | バイパスされたゲート構造を有するトランジスタ |
JP2020128523A Active JP7056976B2 (ja) | 2016-03-17 | 2020-07-29 | バイパスされたゲート構造を有するトランジスタ |
Country Status (6)
Country | Link |
---|---|
US (1) | US9786660B1 (ja) |
EP (2) | EP3430649B1 (ja) |
JP (3) | JP6743170B2 (ja) |
KR (1) | KR102120576B1 (ja) |
CN (2) | CN113782596B (ja) |
WO (1) | WO2017160707A1 (ja) |
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CN109155331A (zh) | 2019-01-04 |
EP3430649B1 (en) | 2022-05-04 |
KR102120576B1 (ko) | 2020-06-08 |
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EP3430649A1 (en) | 2019-01-23 |
US9786660B1 (en) | 2017-10-10 |
JP2020184648A (ja) | 2020-11-12 |
KR20180121579A (ko) | 2018-11-07 |
EP4036988A1 (en) | 2022-08-03 |
JP7056976B2 (ja) | 2022-04-19 |
JP2022079655A (ja) | 2022-05-26 |
WO2017160707A1 (en) | 2017-09-21 |
CN113782596A (zh) | 2021-12-10 |
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