JP7397247B2 - プラズマ処理のための制御のシステム及び方法 - Google Patents
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Description
本出願は、2018年8月14日に出願された米国仮特許出願第62/718,454号、2018年8月30日に出願された米国仮特許出願第62/724,879号、2018年12月13日に出願された米国非仮特許出願第16/219,535号の優先権を主張し、該出願は、それら全体が参照により本明細書に組み込まれる。
Claims (20)
- プラズマ処理システムであって、
真空チャンバと、
前記真空チャンバにおいてプラズマを発生させるための電力を提供するように構成されており、ソース電力パルス(SPパルス)を前記プラズマに結合するようにさらに構成されている第1の結合電極と、
前記真空チャンバに配置されており、基板を支持するように構成されている基板ホルダと、
バイアス電力パルス(BPパルス)を前記基板に結合するように構成されている第2の結合電極と、
前記SPパルスの後縁と対応する前記BPパルスの先縁との間の第1のオフセット期間を制御するように構成されており、前記BPパルスの各々は、前記SPパルスの後縁と次のSPパルスの前縁との間に、サブパルス幅を有する複数のBPサブパルスと、BPサブパルス間隔とを含み、前記BPパルスの後縁と対応する前記SPパルスの先縁との間に第2オフセット期間がある、コントローラと、
を備える、プラズマ処理システム。 - 前記第1の結合電極が、前記プラズマに容量結合され、前記プラズマ処理システムが、容量結合型プラズマ処理システムを含むか、又は
前記第1の結合電極が、前記プラズマに誘導結合され、前記プラズマ処理システムが、誘導結合型プラズマ処理システムを含むか、又は
前記第1の結合電極が、マイクロ波導波管及びスロットアンテナを通して前記プラズマに結合されており、前記プラズマ処理システムが、表面波プラズマ処理システムを含む、請求項1に記載のプラズマ処理システム。 - 前記プラズマ処理システムは、前記SPパルスを発生させるように構成されている第1の関数発生器をさらに備え、
前記コントローラは、
前記第1のオフセット期間を発生させるように構成されているタイミング回路と、
前記第1の関数発生器の入力に結合される第1の出力、及び前記タイミング回路に結合される第2の出力を含む、第1のパルス変調回路と、を含む、請求項1に記載のプラズマ処理システム。 - 前記プラズマ処理システムは、
前記タイミング回路に結合される第2のパルス変調回路と、
前記第2のパルス変調回路に結合され、前記BPパルスを発生させるように構成される、第2の関数発生器と、
をさらに備える、請求項3に記載のプラズマ処理システム。 - 前記タイミング回路が、前記BPパルスと前記SPパルスとの間の第2のオフセット期間を制御するようにさらに構成されている、請求項3に記載のプラズマ処理システム。
- 前記第1のパルス変調回路が、第1のパルス周波数を受信するように構成されている第1の入力と、第1のパルス幅を受信するように構成されている第2の入力と、を含み、前記第1のパルス変調回路が、前記第1のパルス周波数及び前記第1のパルス幅に基づいてSPパルス信号を出力において発生させるようにさらに構成されている、請求項3に記載のプラズマ処理システム。
- 前記タイミング回路が、時間遅延を受信するように構成されるタイミング回路入力を含み、前記タイミング回路が、前記時間遅延に基づいて前記第1のオフセット期間を設定するようにさらに構成されている、請求項3に記載のプラズマ処理システム。
- 前記第1の関数発生器が、前記第1のパルス変調回路から受信したSPパルス信号を第1の周波数で発生された交流(AC)信号で変調することによって、前記SPパルスを発生させるように構成されている、請求項3に記載のプラズマ処理システム。
- 前記タイミング回路に結合され、BPパルス信号を発生させるように構成されている、第2のパルス変調回路と、
前記第2のパルス変調回路に結合され、前記BPパルス信号を第2の周波数で発生されたAC信号で変調することによって前記BPパルスを発生させるように構成されている、第2の関数発生器であって、前記第2の周波数が、約15MHzよりも小さく、前記第1の周波数が、約10MHzより大きい、前記第2の関数発生器と、
をさらに備える、請求項8に記載のプラズマ処理システム。 - 装置であって、
真空チャンバと、
ソース電力(SP)供給ノードに結合され、SPパルスの第1のシーケンスを用いて前記真空チャンバ内でプラズマを発生させるように構成されている、結合電極と、
バイアス電力(BP)供給ノードに結合され、前記真空チャンバ内に配置される基板ホルダであって、前記基板ホルダが、前記プラズマによって処理されるべき基板を支持するように構成されており、BPパルスの第2のシーケンスが、前記プラズマのイオンを前記基板に向かって加速するように構成されている、前記基板ホルダと、
を備え、
前記SPパルスの第1のシーケンスと前記BPパルスの第2のシーケンスとは、前記BPパルスが前記SPパルスに対して第1のオフセット期間だけ遅延し、前記第1のオフセット期間は、前記第1のシーケンスの前記SPパルスの後縁と対応する前記BPパルスの先縁との間にあり、前記BPパルスの各々は、前記SPパルスの後縁と次のSPパルスの前縁との間に、サブパルス幅を有する複数のBPサブパルスと、BPサブパルス間隔とを含み、前記BPパルスの後縁と対応する前記SPパルスの先縁との間に第2オフセット期間がある、ように構成されている、装置。 - 第1のSPパルス及び前記BPパルスが、時間的に少なくとも部分的にオーバラップしない、請求項10に記載の装置。
- 前記結合電極が、共振結合電極である、請求項10に記載の装置。
- 関数発生器と、
前記共振結合電極に直接結合される出力及び前記関数発生器に直接結合される入力を含む、方向性結合器と、
をさらに備える、請求項12に記載の装置。 - 前記共振結合電極が、螺旋共振器アンテナである、請求項12に記載の装置。
- 関数発生器と、
前記関数発生器に結合されるインピーダンス整合ネットワークと、
前記インピーダンス整合ネットワークに結合される入力を含む方向性結合器であって、前記結合電極が、非共振結合電極であり、前記方向性結合器が、前記非共振結合電極に結合される出力をさらに含む、前記方向性結合器と、
をさらに備える、請求項10に記載の装置。 - プラズマ処理の方法であって、
第1のパルス変調回路を用いて第1の信号を第1の関数発生器に出力することと、
前記第1の信号を前記出力することに応答して、前記第1の関数発生器を用いて第1のソース電力パルス(第1のSPパルス)を発生させることと、
プラズマを発生させるために真空チャンバの第1の結合電極において前記第1のSPパルスを提供することと、
前記第1のSPパルスに対して第1のオフセット期間だけ遅延をトリガすることによって、バイアス電力パルス(BPパルス)を発生させることであって、前記第1のオフセット期間は、前記第1のSPパルスの後縁と対応する前記BPパルスの先縁との間にあり、前記BPパルスの各々は、前記第1のSPパルスの後縁と次のSPパルスの前縁との間に、サブパルス幅を有する複数のBPサブパルスと、BPサブパルス間隔とを含み、前記BPパルスの後縁と対応する前記SPパルスの先縁との間に第2オフセット期間がある、ことと、
前記真空チャンバの第2の結合電極において前記BPパルスを提供することと、
前記真空チャンバに配置された基板上でプラズマ成膜又はエッチングプロセスを実行することであって、前記BPパルスを提供することによって、前記プラズマから前記基板に向かってイオンを加速する、前記実行することと、
を含む、方法。 - 前記遅延が、約15μs~約20μsのオフセット期間を含み、
前記BPパルスの前縁が、前記第1のSPパルスの後縁から前記オフセット期間だけ離れている、請求項16に記載の方法。 - 前記第1の関数発生器を用いて第2のSPパルスを発生させることであって、前記BPパルスの後縁が、前記第2のSPパルスの前縁から0秒より大きいオフセット期間だけ離れている、前記発生させることをさらに含む、請求項16に記載の方法。
- 前記第1の関数発生器を用いて第2のSPパルスを発生させることであって、前記BPパルスの後縁が、0秒より大きいオフセット期間だけ前記第2のSPパルスの前縁とオーバラップする、前記発生させることをさらに含む、請求項16に記載の方法。
- 前記第1の関数発生器を用いて第2のSPパルスを発生させることであって、前記第1のSPパルスの前縁が、前記第2のSPパルスの前縁から約200μs~約1000μsであるパルス変調周期だけ離れている、前記発生させることをさらに含む、請求項16に記載の方法。
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