JP7389693B2 - 基板処理方法および基板処理装置 - Google Patents
基板処理方法および基板処理装置 Download PDFInfo
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- JP7389693B2 JP7389693B2 JP2020052159A JP2020052159A JP7389693B2 JP 7389693 B2 JP7389693 B2 JP 7389693B2 JP 2020052159 A JP2020052159 A JP 2020052159A JP 2020052159 A JP2020052159 A JP 2020052159A JP 7389693 B2 JP7389693 B2 JP 7389693B2
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- 239000000758 substrate Substances 0.000 title claims description 63
- 238000012545 processing Methods 0.000 title claims description 44
- 238000003672 processing method Methods 0.000 title claims description 11
- 239000010409 thin film Substances 0.000 claims description 68
- 238000005530 etching Methods 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 30
- 230000005684 electric field Effects 0.000 claims description 27
- 239000010408 film Substances 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 23
- 230000007246 mechanism Effects 0.000 claims description 18
- 238000003475 lamination Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 40
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 229920005591 polysilicon Polymers 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 150000001768 cations Chemical class 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Description
Electrode)WEと、対電極CE(Counter Electrode)と、参照電極(Reference Electrode)REを有しており、参照電極REが基板1の表面に形成された希フッ酸4の液膜に接液される。そして、ポテンショスタットPが参照電極REと作用電極WEとの間に生じる電圧の値、つまり希フッ酸4でエッチング処理される基板1のOCPを検出し、その検出結果を制御部100に与える。一方、制御部100は基板1のOCP値の変動に合わせて交流電源6を制御して交流電圧を変化させる。こうして交流電場を調整するため、基板1の薄膜12(図2参照)をさらに効率良く、安定的にエッチングすることができる。
4…希フッ酸(処理液)
6…交流電源(交流電圧供給機構)
11…シリコン基材
12…薄膜(シリコン酸化膜)
13…ポリシリコン層(第1膜)
21、22…(一対の)電極
23…導電性チャック(電極、保持機構)
24…供給ノズル
41…(希フッ酸の)液膜
100…制御部(制御機構)
Eac…交流電場
P…ポテンショスタット(開回路電圧測定機構)
Z…積層方向
Claims (4)
- 側面の少なくとも一部のみが露出された状態の薄膜を含む積層構造体に前記薄膜を選択的にエッチングするエッチャントを含む処理液を供給して前記薄膜の露出部位より前記薄膜をエッチングするエッチング工程と、
前記エッチング工程と並行して、前記処理液が接液している状態の前記積層構造体を挟み込むように配置された一対の電極に交流電圧を印加して前記積層構造体に交流電場を与える電場印加工程と、
を備え、
前記積層構造体は前記薄膜と異なる組成の第1膜と前記薄膜とを交互に積層した多層膜を有し、
前記電場印加工程は、前記第1膜と前記薄膜との積層方向において前記積層構造体を挟み込むように前記一対の電極を配置し、前記積層方向と平行に前記交流電場を与える基板処理方法。 - 請求項1に記載の基板処理方法であって、
前記電場印加工程は、前記一対の電極の間の開回路電圧を中心に振幅する前記交流電圧を前記一対の電極に印加する基板処理方法。 - 請求項1または2に記載の基板処理方法であって、
前記積層構造体の開回路電圧を測定する工程と、
測定された前記開回路電圧の変動に追従して前記交流電圧を変化させる工程とをさらに備える、基板処理方法。 - 側面の少なくとも一部のみが露出された状態の薄膜と、前記薄膜と異なる組成の第1膜とを交互に積層した多層膜を含む積層構造体をエッチングする基板処理装置であって、
前記積層構造体を水平に保持する保持機構と、
前記水平に保持された積層構造体に、前記薄膜を選択的にエッチングするエッチャントを含む処理液を供給する供給ノズルと、
前記処理液が積層構造体に供給された状態において、前記薄膜と前記第1膜との積層方向において前記積層構造体を挟み込むように、前記積層方向と平行に前記積層構造体に交流電圧を印加する交流電圧供給機構と、
前記積層構造体の開回路電圧を測定する開回路電圧測定機構と、
前記開回路電圧測定機構により測定された開回路電圧の値に応じて、前記積層構造体に印加する交流電圧の値を変化させる制御機構と、
を備えることを特徴とする基板処理装置。
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JP2020052159A JP7389693B2 (ja) | 2020-03-24 | 2020-03-24 | 基板処理方法および基板処理装置 |
PCT/JP2021/000811 WO2021192502A1 (ja) | 2020-03-24 | 2021-01-13 | 基板処理方法および基板処理装置 |
TW110102712A TWI791186B (zh) | 2020-03-24 | 2021-01-25 | 基板處理方法及基板處理裝置 |
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JP2020052159A JP7389693B2 (ja) | 2020-03-24 | 2020-03-24 | 基板処理方法および基板処理装置 |
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JP2021153077A JP2021153077A (ja) | 2021-09-30 |
JP7389693B2 true JP7389693B2 (ja) | 2023-11-30 |
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TW (1) | TWI791186B (ja) |
WO (1) | WO2021192502A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004342841A (ja) | 2003-05-15 | 2004-12-02 | Sharp Corp | 洗浄方法および洗浄装置 |
JP2005294289A (ja) | 2004-03-31 | 2005-10-20 | Mitsubishi Electric Corp | 基板処理装置及び基板処理方法 |
JP2010064909A (ja) | 2008-09-09 | 2010-03-25 | National Institute Of Advanced Industrial Science & Technology | ダイヤモンドの表層加工方法 |
JP2014072298A (ja) | 2012-09-28 | 2014-04-21 | Shibaura Mechatronics Corp | 基板処理装置及び基板処理方法 |
JP2014153273A (ja) | 2013-02-12 | 2014-08-25 | Horiba Advanced Techno Co Ltd | 比抵抗測定回路、比抵抗測定装置、液体試料管理方法及び液体試料管理システム |
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TW340977B (en) * | 1997-09-12 | 1998-09-21 | Nat Science Council | The producing method for porous silicon superlattice NDR diodes |
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2021
- 2021-01-13 WO PCT/JP2021/000811 patent/WO2021192502A1/ja active Application Filing
- 2021-01-25 TW TW110102712A patent/TWI791186B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004342841A (ja) | 2003-05-15 | 2004-12-02 | Sharp Corp | 洗浄方法および洗浄装置 |
JP2005294289A (ja) | 2004-03-31 | 2005-10-20 | Mitsubishi Electric Corp | 基板処理装置及び基板処理方法 |
JP2010064909A (ja) | 2008-09-09 | 2010-03-25 | National Institute Of Advanced Industrial Science & Technology | ダイヤモンドの表層加工方法 |
JP2014072298A (ja) | 2012-09-28 | 2014-04-21 | Shibaura Mechatronics Corp | 基板処理装置及び基板処理方法 |
JP2014153273A (ja) | 2013-02-12 | 2014-08-25 | Horiba Advanced Techno Co Ltd | 比抵抗測定回路、比抵抗測定装置、液体試料管理方法及び液体試料管理システム |
Also Published As
Publication number | Publication date |
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WO2021192502A1 (ja) | 2021-09-30 |
JP2021153077A (ja) | 2021-09-30 |
TWI791186B (zh) | 2023-02-01 |
TW202141608A (zh) | 2021-11-01 |
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