TW340977B - The producing method for porous silicon superlattice NDR diodes - Google Patents
The producing method for porous silicon superlattice NDR diodesInfo
- Publication number
- TW340977B TW340977B TW086113303A TW86113303A TW340977B TW 340977 B TW340977 B TW 340977B TW 086113303 A TW086113303 A TW 086113303A TW 86113303 A TW86113303 A TW 86113303A TW 340977 B TW340977 B TW 340977B
- Authority
- TW
- Taiwan
- Prior art keywords
- superlattice
- porous silicon
- ndr
- substrate
- porous
- Prior art date
Links
Landscapes
- Weting (AREA)
Abstract
A producing method for room temperature porous silicon superlattice negative differential resistance (NDR) diodes, it includes: (a) A Si substrate; (b) Envaporize an Ohm contact metal thin film on back side of Si substrate, to proceed anodization etching; (c) Use anodization etching equipment, etching solution mixed by HF and ethanol, and a current with periodically high/low (H/L) change, to proceed anodization etching on surface of Si substrate, to get porous superlattice structure with periodically H/L porosity; (d) Envaporize another metal film on surface of porous superlattice structure, to get porous silicon superlattice negative differential resistance (NDR) device. Use periodically superlattice quantum structure formed by H/L porosity, to get room temperature negative differential resistance characteristic.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086113303A TW340977B (en) | 1997-09-12 | 1997-09-12 | The producing method for porous silicon superlattice NDR diodes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086113303A TW340977B (en) | 1997-09-12 | 1997-09-12 | The producing method for porous silicon superlattice NDR diodes |
Publications (1)
Publication Number | Publication Date |
---|---|
TW340977B true TW340977B (en) | 1998-09-21 |
Family
ID=58263487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086113303A TW340977B (en) | 1997-09-12 | 1997-09-12 | The producing method for porous silicon superlattice NDR diodes |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW340977B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI638452B (en) * | 2017-12-22 | 2018-10-11 | 林嘉洤 | Room temperature oscillator |
TWI791186B (en) * | 2020-03-24 | 2023-02-01 | 日商斯庫林集團股份有限公司 | Substrate processing method and substrate processing apparatus |
-
1997
- 1997-09-12 TW TW086113303A patent/TW340977B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI638452B (en) * | 2017-12-22 | 2018-10-11 | 林嘉洤 | Room temperature oscillator |
TWI791186B (en) * | 2020-03-24 | 2023-02-01 | 日商斯庫林集團股份有限公司 | Substrate processing method and substrate processing apparatus |
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Legal Events
Date | Code | Title | Description |
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MM4A | Annulment or lapse of patent due to non-payment of fees |