TW340977B - The producing method for porous silicon superlattice NDR diodes - Google Patents

The producing method for porous silicon superlattice NDR diodes

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Publication number
TW340977B
TW340977B TW086113303A TW86113303A TW340977B TW 340977 B TW340977 B TW 340977B TW 086113303 A TW086113303 A TW 086113303A TW 86113303 A TW86113303 A TW 86113303A TW 340977 B TW340977 B TW 340977B
Authority
TW
Taiwan
Prior art keywords
superlattice
porous silicon
ndr
substrate
porous
Prior art date
Application number
TW086113303A
Other languages
Chinese (zh)
Inventor
Shoei-Jinn Wang
Jia-Gann Lin
Haur-Jih Tsay
Horng-Ren Lin
Original Assignee
Nat Science Council
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Filing date
Publication date
Application filed by Nat Science Council filed Critical Nat Science Council
Priority to TW086113303A priority Critical patent/TW340977B/en
Application granted granted Critical
Publication of TW340977B publication Critical patent/TW340977B/en

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Abstract

A producing method for room temperature porous silicon superlattice negative differential resistance (NDR) diodes, it includes: (a) A Si substrate; (b) Envaporize an Ohm contact metal thin film on back side of Si substrate, to proceed anodization etching; (c) Use anodization etching equipment, etching solution mixed by HF and ethanol, and a current with periodically high/low (H/L) change, to proceed anodization etching on surface of Si substrate, to get porous superlattice structure with periodically H/L porosity; (d) Envaporize another metal film on surface of porous superlattice structure, to get porous silicon superlattice negative differential resistance (NDR) device. Use periodically superlattice quantum structure formed by H/L porosity, to get room temperature negative differential resistance characteristic.
TW086113303A 1997-09-12 1997-09-12 The producing method for porous silicon superlattice NDR diodes TW340977B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086113303A TW340977B (en) 1997-09-12 1997-09-12 The producing method for porous silicon superlattice NDR diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086113303A TW340977B (en) 1997-09-12 1997-09-12 The producing method for porous silicon superlattice NDR diodes

Publications (1)

Publication Number Publication Date
TW340977B true TW340977B (en) 1998-09-21

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ID=58263487

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086113303A TW340977B (en) 1997-09-12 1997-09-12 The producing method for porous silicon superlattice NDR diodes

Country Status (1)

Country Link
TW (1) TW340977B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI638452B (en) * 2017-12-22 2018-10-11 林嘉洤 Room temperature oscillator
TWI791186B (en) * 2020-03-24 2023-02-01 日商斯庫林集團股份有限公司 Substrate processing method and substrate processing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI638452B (en) * 2017-12-22 2018-10-11 林嘉洤 Room temperature oscillator
TWI791186B (en) * 2020-03-24 2023-02-01 日商斯庫林集團股份有限公司 Substrate processing method and substrate processing apparatus

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MM4A Annulment or lapse of patent due to non-payment of fees