JP7388434B2 - シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ - Google Patents

シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ Download PDF

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JP7388434B2
JP7388434B2 JP2021514801A JP2021514801A JP7388434B2 JP 7388434 B2 JP7388434 B2 JP 7388434B2 JP 2021514801 A JP2021514801 A JP 2021514801A JP 2021514801 A JP2021514801 A JP 2021514801A JP 7388434 B2 JP7388434 B2 JP 7388434B2
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single crystal
silicon single
layer
crystal wafer
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偉峰 曲
静男 井川
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2021514801A 2019-04-16 2020-02-05 シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ Active JP7388434B2 (ja)

Applications Claiming Priority (3)

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JP2019077651 2019-04-16
JP2019077651 2019-04-16
PCT/JP2020/004397 WO2020213230A1 (ja) 2019-04-16 2020-02-05 シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ

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JPWO2020213230A1 JPWO2020213230A1 (https=) 2020-10-22
JP7388434B2 true JP7388434B2 (ja) 2023-11-29

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US (1) US11959191B2 (https=)
JP (1) JP7388434B2 (https=)
KR (1) KR102741720B1 (https=)
CN (1) CN113906171B (https=)
TW (1) TWI866953B (https=)
WO (1) WO2020213230A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3929334A1 (de) 2020-06-23 2021-12-29 Siltronic AG Verfahren zur herstellung von halbleiterscheiben
US12412741B2 (en) * 2020-11-18 2025-09-09 Applied Materials, Inc. Silicon oxide gap fill using capacitively coupled plasmas

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005311200A (ja) 2004-04-23 2005-11-04 Komatsu Electronic Metals Co Ltd シリコン半導体基板の熱処理方法及び同方法で処理されたシリコン半導体基板
WO2008105136A1 (ja) 2007-02-26 2008-09-04 Shin-Etsu Handotai Co., Ltd. シリコン単結晶ウエーハの製造方法
JP2014034513A (ja) 2012-08-08 2014-02-24 Siltronic Ag 単結晶シリコンからなる半導体ウエハおよびその製造方法
JP2016504759A (ja) 2012-11-19 2016-02-12 サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造
WO2016084287A1 (ja) 2014-11-26 2016-06-02 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
WO2018037755A1 (ja) 2016-08-25 2018-03-01 信越半導体株式会社 シリコン単結晶ウェーハの製造方法、シリコンエピタキシャルウェーハの製造方法、シリコン単結晶ウェーハ及びシリコンエピタキシャルウェーハ
WO2019159539A1 (ja) 2018-02-16 2019-08-22 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4055343B2 (ja) 2000-09-26 2008-03-05 株式会社Ｓｕｍｃｏ シリコン半導体基板の熱処理方法
JP4106862B2 (ja) * 2000-10-25 2008-06-25 信越半導体株式会社 シリコンウェーハの製造方法
US7483424B2 (en) * 2005-07-28 2009-01-27 International Business Machines Corporation Method, for securely maintaining communications network connection data
JP2007194232A (ja) * 2006-01-17 2007-08-02 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの製造方法
JP5567259B2 (ja) * 2008-07-28 2014-08-06 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハおよびその製造方法
JP5621791B2 (ja) * 2012-01-11 2014-11-12 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及び電子デバイス
DE102014208815B4 (de) 2014-05-09 2018-06-21 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe aus Silizium
JP6245156B2 (ja) 2014-12-02 2017-12-13 信越半導体株式会社 シリコンウェーハの評価方法
JP6044660B2 (ja) * 2015-02-19 2016-12-14 信越半導体株式会社 シリコンウェーハの製造方法
DE102016225138A1 (de) 2016-12-15 2018-06-21 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium
CN114093764B (zh) * 2016-12-28 2025-07-22 太阳能爱迪生半导体有限公司 单晶硅晶片

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005311200A (ja) 2004-04-23 2005-11-04 Komatsu Electronic Metals Co Ltd シリコン半導体基板の熱処理方法及び同方法で処理されたシリコン半導体基板
WO2008105136A1 (ja) 2007-02-26 2008-09-04 Shin-Etsu Handotai Co., Ltd. シリコン単結晶ウエーハの製造方法
JP2014034513A (ja) 2012-08-08 2014-02-24 Siltronic Ag 単結晶シリコンからなる半導体ウエハおよびその製造方法
JP2016504759A (ja) 2012-11-19 2016-02-12 サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造
WO2016084287A1 (ja) 2014-11-26 2016-06-02 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
WO2018037755A1 (ja) 2016-08-25 2018-03-01 信越半導体株式会社 シリコン単結晶ウェーハの製造方法、シリコンエピタキシャルウェーハの製造方法、シリコン単結晶ウェーハ及びシリコンエピタキシャルウェーハ
WO2019159539A1 (ja) 2018-02-16 2019-08-22 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法

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CN113906171A (zh) 2022-01-07
JPWO2020213230A1 (https=) 2020-10-22
WO2020213230A1 (ja) 2020-10-22
KR20210151814A (ko) 2021-12-14
TWI866953B (zh) 2024-12-21
US11959191B2 (en) 2024-04-16
US20220195620A1 (en) 2022-06-23
CN113906171B (zh) 2024-11-29
KR102741720B1 (ko) 2024-12-11
TW202041726A (zh) 2020-11-16

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