CN113906171B - 单晶硅晶圆的制造方法及单晶硅晶圆 - Google Patents

单晶硅晶圆的制造方法及单晶硅晶圆 Download PDF

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Publication number
CN113906171B
CN113906171B CN202080028464.7A CN202080028464A CN113906171B CN 113906171 B CN113906171 B CN 113906171B CN 202080028464 A CN202080028464 A CN 202080028464A CN 113906171 B CN113906171 B CN 113906171B
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layer
silicon wafer
single crystal
crystal silicon
bmd
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Chinese (zh)
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CN113906171A (zh
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曲伟峰
井川静男
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202080028464.7A 2019-04-16 2020-02-05 单晶硅晶圆的制造方法及单晶硅晶圆 Active CN113906171B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019077651 2019-04-16
JP2019-077651 2019-04-16
PCT/JP2020/004397 WO2020213230A1 (ja) 2019-04-16 2020-02-05 シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ

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CN113906171A CN113906171A (zh) 2022-01-07
CN113906171B true CN113906171B (zh) 2024-11-29

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US (1) US11959191B2 (https=)
JP (1) JP7388434B2 (https=)
KR (1) KR102741720B1 (https=)
CN (1) CN113906171B (https=)
TW (1) TWI866953B (https=)
WO (1) WO2020213230A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3929334A1 (de) 2020-06-23 2021-12-29 Siltronic AG Verfahren zur herstellung von halbleiterscheiben
US12412741B2 (en) * 2020-11-18 2025-09-09 Applied Materials, Inc. Silicon oxide gap fill using capacitively coupled plasmas

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018037755A1 (ja) * 2016-08-25 2018-03-01 信越半導体株式会社 シリコン単結晶ウェーハの製造方法、シリコンエピタキシャルウェーハの製造方法、シリコン単結晶ウェーハ及びシリコンエピタキシャルウェーハ

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JP4055343B2 (ja) 2000-09-26 2008-03-05 株式会社Ｓｕｍｃｏ シリコン半導体基板の熱処理方法
JP4106862B2 (ja) * 2000-10-25 2008-06-25 信越半導体株式会社 シリコンウェーハの製造方法
JP4794137B2 (ja) * 2004-04-23 2011-10-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン半導体基板の熱処理方法
US7483424B2 (en) * 2005-07-28 2009-01-27 International Business Machines Corporation Method, for securely maintaining communications network connection data
JP2007194232A (ja) * 2006-01-17 2007-08-02 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの製造方法
JP5167654B2 (ja) 2007-02-26 2013-03-21 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
JP5567259B2 (ja) * 2008-07-28 2014-08-06 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハおよびその製造方法
JP5621791B2 (ja) * 2012-01-11 2014-11-12 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及び電子デバイス
DE102012214085B4 (de) 2012-08-08 2016-07-07 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung
WO2014078847A1 (en) 2012-11-19 2014-05-22 Sunedison, Inc. Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei by heat treatment
DE102014208815B4 (de) 2014-05-09 2018-06-21 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe aus Silizium
JP6100226B2 (ja) 2014-11-26 2017-03-22 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
JP6245156B2 (ja) 2014-12-02 2017-12-13 信越半導体株式会社 シリコンウェーハの評価方法
JP6044660B2 (ja) * 2015-02-19 2016-12-14 信越半導体株式会社 シリコンウェーハの製造方法
DE102016225138A1 (de) 2016-12-15 2018-06-21 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium
CN114093764B (zh) * 2016-12-28 2025-07-22 太阳能爱迪生半导体有限公司 单晶硅晶片
JP6897598B2 (ja) 2018-02-16 2021-06-30 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018037755A1 (ja) * 2016-08-25 2018-03-01 信越半導体株式会社 シリコン単結晶ウェーハの製造方法、シリコンエピタキシャルウェーハの製造方法、シリコン単結晶ウェーハ及びシリコンエピタキシャルウェーハ

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Publication number Publication date
CN113906171A (zh) 2022-01-07
JPWO2020213230A1 (https=) 2020-10-22
WO2020213230A1 (ja) 2020-10-22
KR20210151814A (ko) 2021-12-14
JP7388434B2 (ja) 2023-11-29
TWI866953B (zh) 2024-12-21
US11959191B2 (en) 2024-04-16
US20220195620A1 (en) 2022-06-23
KR102741720B1 (ko) 2024-12-11
TW202041726A (zh) 2020-11-16

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